• 제목/요약/키워드: Electrode fabrication

검색결과 862건 처리시간 0.03초

a-Si:H TFT의 수율 향상을 위한 공정 개선 (The Improvement of Fabrication Process for a-Si:H TFT's Yield)

  • 허창우
    • 한국정보통신학회논문지
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    • 제11권6호
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    • pp.1099-1103
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    • 2007
  • 본 연구는 기존의 방식으로 만든 비정질 실리콘 박막 트랜지스터의 제조공정에서 발생되는 결함에 대한 원인을 분석하고 해결함으로써 수율을 증대시키고 신뢰성을 개선하고자한다. 본 연구의 수소화 된 비정질 실리콘 박막 트랜지스터는 Inverted Staggered 형태로 게이트 전극이 하부에 있다. 실험 방법은 게이트전극, 절연층, 전도층, 에치스토퍼 및 포토레지스터층을 연속 증착한다. 스토퍼층을 게이트 전극의 패턴으로 남기고, 그 위에 n+a-Si:H층 및 NPR(Negative Photo Resister)을 형성시킨다. 상부 게이트 전극과 반대의 패턴으로 NPR층을 패터닝 하여 그것을 마스크로 상부 n+a-Si:H 층을 식각하고, 남아있는 NPR층을 제거한다. 그 위에 Cr층을 증착한 후 패터닝하여 소오스-드레인 전극을 위한 Cr층을 형성시켜 박막 트랜지스터를 제조한다. 이렇게 제조한 박막 트랜지스터에서 생기는 문제는 주로 광식각공정시 PR의 잔존이나 세척시 얇은 화학막이 표면에 남거나 생겨서 발생되며, 이는 소자를 파괴시키는 주된 원인이 된다. 그러므로 이를 개선하기 위하여 ashing이나 세척공정을 보다 엄격하게 수행하였다. 이와 같이 공정에 보다 엄격한 기준의 세척과 여분의 처리 공정을 가하여 수율을 확실히 개선 할 수 있었다.

Electrochemical Characteristics of Carbonaceous Materials for Energy Storable Electrode Fabrication

  • Jung, Ki-Young;Kim, Doo-Hwan;Sung, Youl-Moon
    • 조명전기설비학회논문지
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    • 제24권7호
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    • pp.57-63
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    • 2010
  • Photo-capacitor electrodes are attracting great attention because of their high capacitance and potential applications in electronic devices. Carbon capacitor, active carbon capacitor and its combination will be fabricated using a sandwich method as carbonaceous material on each type of storable electrode with $20{\times}15$[mm] cell size. Carbon/active carbon cell was fabricated using sol-gel process with $120[^{\circ}C]$ dry temperature in 2hour and using sintering process with $500[^{\circ}C]$ in 2hour. The effect of sintering temperature on carbon properties was also investigated with an X-ray diffraction technique to get the best sintering temperature. The detail of the fabrication process will be explained. Active carbon as carbonaceous material has a better capacitance in storable electrode with mean thickness $32[{\mu}m]$ and with particle size $1[{\mu}m]$ to $4.5[{\mu}m]$ in $20{\times}15$[mm] sample size of storable electrode.

Fabrication of All-Solution Processed Transparent Silver Nanowire Electrode Using a Direct Printing Process

  • 백장미;이린;성명모
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.641-641
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    • 2013
  • We report the transparentsilver nanowire electrode fabricated by a direct printing process, liquid-bridge-mediated nanotransfer molding. We fabricated silver nanowire arrays by liquidbridge- mediated nanotransfer molding using the silver nanoparticle ink and PEDOT:PSS polymer. Weinvestigated the formation of silver nanowire arrays by SEM and transmittance of the transparent silver nanowire electrode. We also measured the conductivity to confirm the potential of our approach.

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방전 미세구멍가공 특성의 고찰 (A Study on the Micro Hole Machining Characteristics in WEDG method)

  • 정태현;박규율
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1997년도 추계학술대회 논문집
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    • pp.953-956
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    • 1997
  • Micro drilling characteristics by EDM method was investigated. In detail, Micro tool electrode for EDM drilling was machined by use of WEDG method and micro hole was drilled using the machined tool electrode in SUS plate. The machining accuracy and time was compared in a different dielectric fluid. As a result, it was convinced that this method could be utilized as a fabrication technology of micro mold or micro 3 dimensional parts.

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A New Electrode Structure for Color-shift Reduction in PVA LCD

  • Kwon, Yong-Hoan;Baek, Jong-In;Kim, Jae-Chang;Yoon, Tae-Hoon
    • Journal of Information Display
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    • 제8권3호
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    • pp.17-21
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    • 2007
  • We introduce a new electrode structure for the patterned vertical alignment (PVA) mode, which has a lower color-shift at large viewing angle than the one-domain VA mode. By manipulating the period of electrode structure, we can make more multi-domains and use the existing fabrication processes without having to use additional materials.

수소화된 비정질규소 박막트랜지스터의 누설전류 (Leakage Current of Hydrogenated Amorphous Silicon Thin-Film Transistors)

  • 이호년
    • 한국산학기술학회논문지
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    • 제8권4호
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    • pp.738-742
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    • 2007
  • 능동형 평판디스플레이 소자를 제작하기 위해 수소화된 비정질 규소 박막트랜지스터 (a-Si:H TFT)의 상부에 화소전극을 형성하는 과정에 따른 TFT의 특성 변화를 연구하였다. 화소전극 형성 전에 1 pA 수준의 오프상태 전류 및 $10^6$ 이상의 스위칭률을 보이던 TFT에 화소전극 공정을 행하면 오프상태 전류가 10 pA 이상으로 증가하여 소자특성이 악화되었다. 이러한 소자특성의 악화는 SiNx 보호막 표면의 플라즈마 처리로 개선될 수 있었는데, 특히 $N_2$ 플라즈마가 좋은 결과를 보였다. 화소전극 공정에 의해서 누설전류가 증가하는 것은 투명전도막 증착공정 중에 SiNx 보호막 표면에 전하가 축적되어 이에 유도되는 백채널의 캐리어 축적에 기인하는 것으로 추정된다.

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Cu/Ni/Au 전극을 이용한 일회용 포도당 센서 개발 (Development of the disposable glucose sensor using Cu/Ni/Au electrode)

  • 이영태;이승로
    • 센서학회지
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    • 제15권5호
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    • pp.352-356
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    • 2006
  • In this paper, we developed enzyme electrode of a new form to improve performance of disposable glucose sensor. We could fabricate electrode of Cu/Ni/Au structure which has very low electrical resistance (0.1 $\Omega$) by sticking copper film to plastic film with laminating method and electro-plated nickle and gold on it. The enzyme electrode was completed by immobilizing enzyme on the fabricated electrode. The fabricated glucose sensor has very quick sensing time as 3 seconds, and excellent reproducibility, fabrication yield as well.

Fabrication of gate electrode for OTFT using screen-printing and wet-etching with nano-silver ink

  • Lee, Mi-Young;Song, Chung-Kun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.889-892
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    • 2009
  • We have developed a practical printing technology for the gate electrode of organic thin film transistors(OTFTs) by combining screen-printing with wet-etching process using nano-silver ink as a conducting material. The screen-printed and wet-etched Ag electrode exhibited a minimum line width of ~5 um, the thickness of ~65 nm, and a resistivity of ${\sim}10^{-6}{\Omega}{\cdot}cm$, producing good geometrical and electrical characteristics for gate electrode. The OTFTs with the screen-printed and wet-etched Ag electrode produced the saturation mobility of $0.13cm^2$/Vs and current on/off ratio of $1.79{\times}10^6$, being comparable to those of OTFT with the thermally evaporated Al gate electrode.

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광변조기용 CPW 전극제작 및 특성 (Fabrication and Properties of CPW Electrode for Optical Modulator)

  • 임영삼;김성구;박계춘;이진;정해덕
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.278-281
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    • 1999
  • We designed and fabricated a travelingwave CPW(coplanar waveguide) electrode for LiNbO$_3$ optical modulator. To Investigate the variation of microwave refractive index of these electrodes, we prepared the CPW electrode samples as a function of electrode thickness and measured the TDR and S-parameter. From this results, we could know the electrode conditions of index matching to 2.20 for 1150 nm optical wave index for applying LiNbO$_3$ optical modulator. Also we discussed the some properties of CPW electrode for applying LiNbO$_3$ optical modulator.

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유연 기판 기반 전기화학 센서 응용을 위한 레이저 유도 그래핀 전극 제작 및 전사 연구 (Fabrication and Transfer of Laser Induced Graphene (LIG) Electrode for Flexible Substrate-based Electrochemical Sensor Applicatins)

  • 김정대;김태헌;박정호
    • 전기학회논문지
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    • 제67권3호
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    • pp.406-412
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    • 2018
  • This paper describes the fabrication process of laser induced graphene (LIG) and its transfer method on to a flexible and stretchable PDMS substrate. By irradiating CO2 laser on a polyimide(PI) film surface, a localized high temperature is created, resulting in a three-dimensional porous graphene network structure with good conductivity. This LIG electrode is relatively easy to fabricate and since it is very weak the LIG electrode was transferred to a flexible PDMS substrate to increase the sturdiness as well as possible use in flexible applications. Sheet resistance, thickness, and electrochemical activity of the fabricated in-situ LIG electrodes have been examined and compared with the LIG electrodes after transferring to PDMS elastomer. The properties of the LIG electrodes were also examined depending on the $CO_2$ laser power. As the irradiated laser power increased, the LIG electrode resistance decreases and the LIG electrode thickness increased. At 4.8 W of laser power, the average sheet resistance and thickness of the fabricated LIG electrodes were approximately $31.7{\Omega}/{\Box}$ and $62.67{\mu}m$, respectively. Moreover, the electrochemical activity of the fabricated LIG electrode at 4.8 W of laser power showed a high oxidation current of $28.2{\mu}A$ after transferring to PDMS.