• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.6
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• pp.1099-1103
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• 2007

TFT's have been intensively researched for possible electronic and display applications. Through tremendous engineering and scientific efforts, a-Si:H TFT fabrication process was greatly improved. In this paper, the reason on defects occurring at a-Si:H TFT fabrication process is analyzed and solved, so a-Si:H TFT's yield is increased and reliability is improved. The a-Si:H TFT of this paper is inverted staggered type TFT. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr). We have fabricated a-SiN:H, conductor, etch-stopper and photo-resistor on gate electrode in sequence, respectively. We have deposited n+a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-slower pattern. The NPR layer by inverting pattern of upper Sate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFT made like this has problems at photo-lithography process caused by remains of PR. When sample is cleaned, this remains of PR makes thin chemical film on surface and damages device. Therefor, in order to improve this problem we added ashing process and cleaning process was enforced strictly. We can estimate that this method stabilizes fabrication process and makes to increase a-Si:H TFT's yield.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.7
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• pp.57-63
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• 2010

Photo-capacitor electrodes are attracting great attention because of their high capacitance and potential applications in electronic devices. Carbon capacitor, active carbon capacitor and its combination will be fabricated using a sandwich method as carbonaceous material on each type of storable electrode with $20{\times}15$[mm] cell size. Carbon/active carbon cell was fabricated using sol-gel process with $120[^{\circ}C]$ dry temperature in 2hour and using sintering process with $500[^{\circ}C]$ in 2hour. The effect of sintering temperature on carbon properties was also investigated with an X-ray diffraction technique to get the best sintering temperature. The detail of the fabrication process will be explained. Active carbon as carbonaceous material has a better capacitance in storable electrode with mean thickness $32[{\mu}m]$ and with particle size $1[{\mu}m]$ to $4.5[{\mu}m]$ in $20{\times}15$[mm] sample size of storable electrode.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.641-641
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• 2013

We report the transparentsilver nanowire electrode fabricated by a direct printing process, liquid-bridge-mediated nanotransfer molding. We fabricated silver nanowire arrays by liquidbridge- mediated nanotransfer molding using the silver nanoparticle ink and PEDOT:PSS polymer. Weinvestigated the formation of silver nanowire arrays by SEM and transmittance of the transparent silver nanowire electrode. We also measured the conductivity to confirm the potential of our approach.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.953-956
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• 1997

Micro drilling characteristics by EDM method was investigated. In detail, Micro tool electrode for EDM drilling was machined by use of WEDG method and micro hole was drilled using the machined tool electrode in SUS plate. The machining accuracy and time was compared in a different dielectric fluid. As a result, it was convinced that this method could be utilized as a fabrication technology of micro mold or micro 3 dimensional parts.

• Journal of Information Display
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• v.8 no.3
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• pp.17-21
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• 2007

We introduce a new electrode structure for the patterned vertical alignment (PVA) mode, which has a lower color-shift at large viewing angle than the one-domain VA mode. By manipulating the period of electrode structure, we can make more multi-domains and use the existing fabrication processes without having to use additional materials.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.4
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• pp.738-742
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• 2007

The variations in the device characteristics of hydrogenated amorphous thin-film transistors (a-Si:H TFTs) were studied according to the processes of pixel electrode fabrication to make active-matrix flat-panel displays. The off-state current was about 1 pA and the switching ratio was over $10^6$ before fabrication of pixel electrodes; however, the off-state current increased over 10 pA after fabrication of pixel electrodes. Surface treatment on SiNx passivation layers using plasma could improve the off-state characteristics after pixel electrode process. $N_2$ plasma treatment gave the best result. Charge accumulation on the SiNx passivation layer during the deposition of transparent conducting layer might cause the increase of off-state current after the fabrication of pixel electrodes.

• Journal of Sensor Science and Technology
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• v.15 no.5
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• pp.352-356
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• 2006

In this paper, we developed enzyme electrode of a new form to improve performance of disposable glucose sensor. We could fabricate electrode of Cu/Ni/Au structure which has very low electrical resistance (0.1 $\Omega$) by sticking copper film to plastic film with laminating method and electro-plated nickle and gold on it. The enzyme electrode was completed by immobilizing enzyme on the fabricated electrode. The fabricated glucose sensor has very quick sensing time as 3 seconds, and excellent reproducibility, fabrication yield as well.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.889-892
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• 2009

We have developed a practical printing technology for the gate electrode of organic thin film transistors(OTFTs) by combining screen-printing with wet-etching process using nano-silver ink as a conducting material. The screen-printed and wet-etched Ag electrode exhibited a minimum line width of ~5 um, the thickness of ~65 nm, and a resistivity of ${\sim}10^{-6}{\Omega}{\cdot}cm$, producing good geometrical and electrical characteristics for gate electrode. The OTFTs with the screen-printed and wet-etched Ag electrode produced the saturation mobility of $0.13cm^2$/Vs and current on/off ratio of $1.79{\times}10^6$, being comparable to those of OTFT with the thermally evaporated Al gate electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.278-281
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• 1999

We designed and fabricated a travelingwave CPW(coplanar waveguide) electrode for LiNbO$_3$ optical modulator. To Investigate the variation of microwave refractive index of these electrodes, we prepared the CPW electrode samples as a function of electrode thickness and measured the TDR and S-parameter. From this results, we could know the electrode conditions of index matching to 2.20 for 1150 nm optical wave index for applying LiNbO$_3$ optical modulator. Also we discussed the some properties of CPW electrode for applying LiNbO$_3$ optical modulator.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.3
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• pp.406-412
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• 2018

This paper describes the fabrication process of laser induced graphene (LIG) and its transfer method on to a flexible and stretchable PDMS substrate. By irradiating CO2 laser on a polyimide(PI) film surface, a localized high temperature is created, resulting in a three-dimensional porous graphene network structure with good conductivity. This LIG electrode is relatively easy to fabricate and since it is very weak the LIG electrode was transferred to a flexible PDMS substrate to increase the sturdiness as well as possible use in flexible applications. Sheet resistance, thickness, and electrochemical activity of the fabricated in-situ LIG electrodes have been examined and compared with the LIG electrodes after transferring to PDMS elastomer. The properties of the LIG electrodes were also examined depending on the $CO_2$ laser power. As the irradiated laser power increased, the LIG electrode resistance decreases and the LIG electrode thickness increased. At 4.8 W of laser power, the average sheet resistance and thickness of the fabricated LIG electrodes were approximately $31.7{\Omega}/{\Box}$ and $62.67{\mu}m$, respectively. Moreover, the electrochemical activity of the fabricated LIG electrode at 4.8 W of laser power showed a high oxidation current of $28.2{\mu}A$ after transferring to PDMS.