• 한국자동차공학회논문집
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• 제15권2호
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• pp.101-108
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• 2007

This paper presents an efficient meshless method for analyzing cracked piezoelectric structures subjected to mechanical and electrical loading. The method employs an element free Galerkin (EFG) formulation and an enriched basic function as well as special shape functions that contain discontinuous derivatives. Based on the moving least squares (MLS) interpolation approach, The EFG method is one of the promising methods for dealing with problems involving progressive crack growth. Since the method is meshless and no element connectivity data are needed, the burdensome remeshing procedure required in the conventional finite element method (FEM) is avoided. The numerical results show that the proposed method yields an accurate near-tip stress field in an infinite piezoelectric plate containing an interior hole. Another example is to study a ceramic multilayer actuator. The proposed model was found to be accurate in the simulation of stress and electric field concentrations due to the abrupt end of an internal electrode.

• Journal of Welding and Joining
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• 제24권1호
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• pp.88-92
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• 2006

Laser-rotating arc hybrid welding was introduced by combining $CO_2$ laser and rotating gas metal arc welding. While the arc rotation enhances the weld pool motion, it reduces the undercut formation which is one of most critical weld defects in the conventional laser-arc hybrid welding. This research investigated the bead characteristics according to the welding parameters such as frequency of rotation, welding voltage, shielding gas composition and interspacing distance between laser and we. The welding parameters were selected to reduce spatter generation and ensure sound weld beads fur bead welding and butt welding with various joint gaps. Gap bridging ability was improved, such that the sound weld beads were achieved for butt joint with up to 2mm joint sap, with no adjustment of CTWD(Contact tip-to-workpiece distance) and electrode diameter.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권2호
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• pp.93-101
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• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.