• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.53-54
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• 2005

We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin rim transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with top cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that TOLED with ITO or IZO top cathode layer prepared by BCS has much lower leakage current density ($1\times10^{-5}$ mA/cm2 at -6V) than that ($1\times10^{-1}\sim10^{\circ}mA/cm^2$)of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and dc/rf sputtering in fabrication process of organic based optoelectronics.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.735-738
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• 1996

Amorphous nickelphthalocyanine(NiPc) thin films were prepared by vacuum evaporation and their electrochromic behavior and voltammograms were examined in the five kinds of aqueous electrolytes. Amorphous NiPc films were prepared on indium-tin-oxide(ITO) glass substrates cooled to-$120^{\circ}C$ by using liquid nitrogen under a vacuum of $2.4 \times 10^{-4}$. The voltammetric and electrochromic measurements were made using a potential galvanostat. In order to confirm the color change, optical vis-transmission spectra of the NiPc films were measured by a spectrophotometer with various electrode potential applied. The NiPc amorphous thin films exhibited most clearly electrochromism in $KNO_3$ aqueous electrolyte. The specimen films underwent 3 color transitions (from blue to yellow-green, then to red violet, then to dark blue), corresponding to the three peaks on the voltammograms in $KNO_3$ aqueous electrolyte. Blue is color of the as-prepared film. When the potential was swept, charge compensation was attained upon oxidation by injection of anions from the electrolyte and upon reduction by expulsion of anions.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.282-282
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• 2011

Low power consuming operation of phase-change random access memory (PRAM) can be achieved by confining the switching volume of phase change media into nanometer scale. Ge2Sb2Te5 (GST) is one of the best materials for the phase change random access memory (PRAM) because the GST has two stable states, namely, high and low resistance values, which correspond to the amorphous and crystalline phases of GST, respectively. However, achieving the fast operation speed at lower current requires an alternative chalcogenide material to replace the GST and shrinking the dimension of programmable volume. In this paper, we have fabricated nanoscale contact area on Ge2Sb2Te5 thin films with trimming process. The GST material was fabricated by melt quenching method and the GST thin films were deposited with thickness of 100 nm by the electron beam evaporation system. As a result, the reset current can be safely scaled down by reducing the device contact area and we could confirmed the phase-change characteristics by applying voltage pulses.

• Transactions of the Korean Society of Automotive Engineers
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• v.8 no.5
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• pp.54-66
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• 2000

A gasoline direct injection single cylinder engine has been developed to study operational characteristics for highly stratified conditions. Parameters related to design and experiment were also studied to understand the characteristics of combustion and emissions at some part load conditions. It was found that optimal timings between the end of fuel injection and spark ignition were existed for stable combustion under the stratified modes, In a low engine speed, fuel spray behavior around piston bowl was important for stable combustion. The in-cylinder air motion affecting fuel spray behavior was found to be a dominant factor at higher engine speed as fuel injection timing had to be advanced to secure enough time for fuel evaporation and mixing with surrounding air. As swirl ratio increased, spark timing could be advanced for stable combustion and a higher compression ratio could be used for improved fuel consumption and stable combustion at the stratified mode. It was also observed that electrode geometry and piston bowl shape played an important role for combustion and emission characteristics and some results were shown for comparison.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.446-448
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• 2000

Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition (OMBD) and vacuum evaporation respectively. For the gate dielectric layer, OPTMER PC403 photo acryl (JSR Coporation.) was spin-coated and cured at $220^{\circ}C$. Electrical characteristics of the devices were investigated, where the channel length and width was $50{\mu}m$ and 5 mm. It was found that field effect mobility was $0.039\;cm^2V^{-1}s^{-1}$, threshold voltage was -7 V, and on/off current ratio was $10^6$.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.27-29
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• 2000

For the DLC-coaled Si-tip FEA, the modified lift off-process, by which DLC coated on both gate electrode surface and gate insulator in the gate aperture could be removed, was proposed. In the process, the Al sacrificial layer was deposited on a tilted and rotated substrate by an e-beam evaporation, and DLC film was coated on the substrate by PA-CVD method. Afterward the DLC was perfectly removed except the DLC films coated on emitter tips by etch-out of Al sacrificial layer. Current-voltage curves and current fluctuation of the DLC-coated Si-tip FEA showed that the proposed lift-off process played an important role in decreasing gate leakage current and stabilizing omission current.

• Journal of the Korean Applied Science and Technology
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• v.18 no.3
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• pp.191-196
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• 2001

Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition (OMBD) and vacuum evaporation respectively. For the gate dielectric layer, photoacryl (OPTMER PC403 from JSR Co.) was spin-coated and cured at $220^{\circ}C$. Electrical characteristics of the device were investigated, where the channel length and width was 50 ${\mu}m$ and 5 mm. It was found that field effect mobility was 0.039 $cm^{2}V^{-1}s^{-1}$, threshold voltage was -8 V, and on/off current ratio was $10^{6}$. Further details will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.258-258
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• 2008

Among several available high-k dielectrics the lanthanum zirconium oxide ($LaZrO_x$) system is very attractive as a buffer insulating layer. Because both lanthanum and zirconium atoms, the constituents of the $LaZrO_x$ thin film, have been considered to be thermally stable in contact with Si. The $LaZrO_x$ films were deposited by a sol-gel method. After the deposition, The $LaZrO_x$ films were crystallized at $750^{\circ}C$ for 30 minutes in $O_2$ ambient. PVDF-TrFE films were deposited on these $LaZrO_x$/Si structures using a sol-gel technique. The sol-gel solution was spin-coated on $LaZrO_x$/Si structures at 500 rpm for 5 sec and 2500 rpm for 15 sec. The deposited layer was dried at $165^{\circ}C$ for 30 min in air on a hot-plate. Then, we deposited Au electrode on PVDF-TrFE films using thermal evaporation.

• Journal of Electrical Engineering and Technology
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• v.4 no.1
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• pp.118-122
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• 2009

Organic thin film transistors with a pentacene active layer and various polymer gate insulators were fabricated and their performances were investigated. Characteristics of pentacene thin film transistors on different polymer substrates were investigated using an atomic force microscope (AFM) and x-ray diffraction (XRD). The pentacene thin films were deposited by thermal evaporation on the gate insulators of various polymers. Hexamethyldisilazane (HMDS), polyvinyl acetate (PVA) and polymethyl methacrylate (PMMA) were fabricated as the gate insulator where a pentacene layer was deposited at 40, 55, 70, 85, 100 oC. Pentacene thin films on PMMA showed the largest grain size and least trap concentration. In addition, pentacene TFTs of top-contact geometry are compared with PMMA and $SiO_2$ as gate insulators, respectively. We also fabricated pentacene TFT with Poly (3, 4-ethylenedioxythiophene)-Polysturene Sulfonate (PEDOT:PSS) electrode by inkjet printing method. The physical and electrical characteristics of each gate insulator were tested and analyzed by AFM and I-V measurement. It was found that the performance of TFT was mainly determined by morphology of pentacene rather than the physical or chemical structure of the polymer gate insulator

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.12
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• pp.607-613
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• 2001

Molybdenum thin films were deposited on the soda lime glass(SLG) substrates by direct-current planar magnetron sputtering, with a sputtering power density of $4.44W/cm^2$. The working pressure was varied from 0.5 mtorr to 20 mtorr to gain a better understanding of the effect of sputtering pressure on the morphology and microstructure of the Mo film. Thin films of $CU(InGa)Se_2$ (CIGS) were deposited on the Mo-coated glass by three stage co-evaporation process. The highest efficiency device was obtained at the maximum value of the tensive stress. The morphology of Mo-coated films were examined by using scanning electron microscopy The film's microstructure, such as the preferred orientation, the full width at half-maximum(FWHM), and the residual intrinsic stress were examined by X-ray diffraction.