• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권2호
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• pp.98-103
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• 1999

The effect of $Al_2O_3$ additives to $\beta-SiC+39vol.%ZrB_2$ electroconductive ceramic composites by pressureless sintering on microstructural, mechanical and electrical properties were investigated. The $\beta-SiC+39vol.%ZrB_2$ ceramic composites were pressureless sintered by adding 4, 8, 12wt.% $Al_2O_3$ powder as a liquid forming additives at $1950^{\cire}C$ for 1h. Phase analysis of composites by XRD revealed mostly of $\alpha-SiC(6H), ZrB_2$ and weakly $\alpha-SiC(4H), \beta-SiC (15R)$ phase. The relative density of composites was lowered by gaseous products of the result of reaction between \beta-SiC and Al_2O_3$, therefore, porosity was increased with increasing $Al_2O_3$ contents, and showed the maximum value of 1.4197MPa.$m^{1/2}$ for composite with 4wt.% $Al_2O_3$ additives. The electrical resistivity of $\beta-SiC+39vol.%ZrB_2$ electroconductive ceramic composite was increased with increasing $Al_2O_3$ contents, and showed positive temperature coefficient resistance (PTCR) in the temperature range of $25^{\cire}C$ to $700^{\cire}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.320-325
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• 1996

The influences of ZrB$_2$additives to the SiC and pulse width on electrical discharge machining of SiC-ZrB$_2$electroconductive ceramic composites were investigated. IIigher-flexural strength materials show a trend toward smaller crater volumes, leaving a soother surface; the average surface roughness of the SiC-ZrB$_2$15 Vol.% Composite with the flexural strength of 375㎫ was 3.2${\mu}{\textrm}{m}$,whereas the SiC-ZrB$_2$30 Vol.% composite of 457㎫ was 1.35${\mu}{\textrm}{m}$. In the SEM micrographs of the fracture surface of SiC-ZrB$_2$composites, the SiC-ZrB$_2$two phaes are distinct; the white phase is the ZrB$_2$. In the micrograph of the EDM surface, however, these phases are no longer distinct because of thicker recast layer of resolidified-melt-formation droplets present.

• 전기학회논문지
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• 제57권11호
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• pp.2015-2022
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• 2008

The effect of content of $Al_2O_3+Y_2O_3$ sintering additives on the densification behavior, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites was investigated. The $SiC-ZrB_2$ electroconductive ceramic composites were pressurless-sintered for 2 hours at 1,700[$^{\circ}C$] temperatures with an addition of $Al_2O_3+Y_2O_3$(6 : 4 mixture of $Al_2O_3$ and $Y_2O_3$) as a sintering aid in the range of $8\;{\sim}\;20$[wt%]. Phase analysis of $SiC-ZrB_2$ composites by XRD revealed mostly of $\alpha$-SiC(6H), $ZrB_2$ and In Situ YAG($Al_5Y_3O_{12}$). The relative density, flexural strength, Young's modulus and vicker's hardness showed the highest value of 89.02[%], 81.58[MPa], 31.44[GPa] and 1.34[GPa] for $SiC-ZrB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature respectively. Abnormal grain growth takes place during phase transformation from $\beta$-SiC into $\alpha$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of $3.l4{\times}10^{-2}{\Omega}{\cdot}cm$ for $SiC-ZrB_2$ composite added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at 700[$^{\circ}C$]. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all negative temperature coefficient resistance (NTCR) in the temperature ranges from room temperature to 700[$^{\circ}C$]. Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• 전기학회논문지
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• 제58권9호
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• pp.1757-1763
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• 2009

The composites were fabricated by adding 0, 15, 20, 25[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by Spark Plasma Sintering(hereafter, SPS) were examined. Reactions between ${\beta}-SiC$ and $ZrB_2$ were not observed in the XRD analysis. The relative density of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 90.93[%], 74.62[%], 74.99[%] and 72.61[%], respectively. The XRD phase analysis of the electroconductive SiC ceramic composites reveals high of SiC and $ZrB_2$ and low of $ZrO_2$ phase. The lowest flexural strength, 108.79[MPa], shown in SiC+15[vol.%] $ZrB_2$ composite and the highest - 220.15[MPa] - in SiC+20[vol.%] $ZrB_2$composite at room temperature. The trend of the mechanical properties of the electroconductive SiC ceramic composites moves in accord with that of the relative density. The electrical resistivities of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 4.57${\times}10^{-1}$, 2.13${\times}10^{-1}$, 1.53${\times}10^{-1}$ and 6.37${\times}10^{-2}$[${\Omega}$ cm] at room temperature, respectively. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$. SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ are Negative Temperature Coefficient Resistance(hereafter, NTCR) in temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$]. The declination of V-I characteristics of SiC+20[vol.%]$ZrB_2$ composite is 3.72${\times}10^{-1}$. It is convinced that SiC+20[vol.%]$ZrB_2$ composite by SPS can be applied for heater or electrode above 1000[$^{\circ}C$]

• 전기학회논문지
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• 제58권4호
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• pp.770-776
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• 2009

The composites were fabricated by adding 0, 15, 30, 45[vol.%] $ZrB_2$ powders as a second phase to SiC matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by spark plasma sintering(SPS) were investigated. Reactions between ${\beta}$-SiC and $ZrB_2$ were not observed in the XRD and the phase analysis of the electroconductive SiC ceramic composites. The relative density of mono ${\beta}$-SiC, ${\beta}$-SiC+15[vol.%]$ZrB_2$, ${\beta}$-SiC+30[vol.%]$ZrB_2$ and ${\beta}$-SiC+45[vol.%]$ZrB_2$ composites are respectively 99.24[%], 87.53[%], 96.41[%] and 98.11[%] Phase analysis of the electroconductive SiC ceramic composites by XRD revealed mostly of ${\beta}$-SiC, $ZrB_2$ and weakly of $ZrO_2$ phase. The flexural strength showed the lowest of 114.44[MPa] for ${\beta}$-SiC+15[vol.%]$ZrB_2$ powders and showed the highest of 210.75[MPa] for composite no added with $ZrB_2$ powders at room temperature. The trend of the mechanical properties of the electroconductive SiC ceramic composites is accorded with the trend of the relative density. The electrical resistivity of the electroconductive SiC ceramic composites decreased with increased $ZrB_2$ contents. The electrical resistivity of mono ${\beta}$-SiC, ${\beta}$-SiC+15[vol.%]$ZrB_2$, ${\beta}$-SiC+30[vol.%]$ZrB_2$ and ${\beta}$-SiC+45[vol.%]$ZrB_2$ composites are respectively $4.57{\times}10^{-1},\;2.13{\times}10^{-1},\;2.68{\times}10^{-2}\;and\;1.99{\times}10^{-2}[{\Omega}{\cdot}cm]$ at room temperature. The electrical resistivity of mono ${\beta}$-SiC and ${\beta}$-SiC+15[vol.%]$ZrB_2$ are negative temperature coefficient resistance(NTCR) in temperature ranges from $25[^{\circ}C]\;to\; 100[^{\circ}C]$. The electrical resistivity of ${\beta}$-SiC+30[vol.%]$ZrB_2$ and ${\beta}$-SiC+45[vol.%]ZrB_2$ are positive temperature coefficient resistance(PTCR) in temperature ranges from $25[^{\circ}C]\;to\;100[^{\circ}C]$. It is convinced that ${\beta}$-SiC+30[vol.%]$ZrB_2$ composites by SPS for heater or ignitors can be applied.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권11호
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• pp.505-513
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• 2006

The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless-sintered $SiC-ZrB_2$ electroconductive ceramic composites. Phase analysis of composites by XRD revealed mostly of ${\alpha}-SiC(4H),\;ZrB_2,\;{\beta}-SiC(15R)$ and In Situ $YAG(Al_5Y_3O_{12})$. The relative density and the flexural strength showed the highest value of 86.8[%] and 203[Mpa] for $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Owing to crack deflection and crack bridging of fracture toughness mechanism, the fracture toughness showed 3.7 and $3.6[MPa{\cdot}m^{1/2}]\;for\;SiC-ZrB_2$ composites with an addition of 8 and 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature respectively. Abnormal grain growth takes place during phase transformation from ${\beta}-SiC\;into\;{\alpha}-SiC$ was correlated with In Situ YAG phase by reaction between $Al_2O_3\;and\;Y_2O_3$ additives during sintering. The electrical resistivity showed the lowest value of $6.5{\times}10^{-3}[({\Omega}{\cdot}cm]$ for the $SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid at room temperature. The electrical resistivity of the $SiC-ZrB_2$ composites was all positive temperature coefficient(PTCR) in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. The resistance temperature coefficient showed the highest value of $3.53{\times}10^{-3}/[^{\circ}C]\;for\;SiC-ZrB_2$ composite with an addition of 8[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid in the temperature ranges from $25[^{\circ}C]\;to\;700[^{\circ}C]$. In this paper, it is convinced that ${\beta}-SiC$ based electroconductive ceramic composites for heaters or ignitors can be manufactured by pressureless sintering.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권9호
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• pp.510-515
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta-SiC-TiB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of Al_2O_3+Y_2O_34. The result of phase analysis of composites by XRD revealed $\alpha-SIC(6H)\;TiB_2,\; and YAG(Al5Y3O12) crystal phase. The relative density and the mechanical properties of composites were increased with increasing $Al_2O_3+Y_2O_34 contents because YAG of reaction between $Al_2O_3\; and\; Y_2O_3$ was increased. The Flexural strength showed the highest value of 432.5MPa for composites added with 12wt% $Al_2O_3+Y_2O_34 additives at room temperature. Owing to crack deflection crack bridging phase transition and TAG of fracture toughness mechanism the fracture toughness showed 7.1MPa.m1/2 for composites added with 12wt% $Al_2O_3+Y_2O_34 additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $6.0\times10-4\Omega.cm\; and\; 3.1\times10-3/^{\circ}C4 respectively for composite added with 12wt% \Omega additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance (PTCR) in the temperature range of $25^{\circ}C\; to\; 700^{\circ}C$.

• 전기학회논문지
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• 제56권9호
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• pp.1602-1608
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• 2007

The composites were fabricated, respectively, using 61[vol.%] SiC-39[vol.%] $TiB_2$ and using 61[vol.%] SiC-39[vol.%] $ZrB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ by hot pressing annealing at $1650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H, 3C), $TiB_2$, $ZrB_2$ and $YAG(Al_5Y_3O_{12})$ crystal phase on the Liquid-Phase-Sintered(LPS) $SiC-TiB_2$, and $SiC-ZrB_2$ composite. $\beta\rightarrow\alpha-SiC$ phase transformation was occurred on the $SiC-TiB_2$ and $SiC-ZrB_2$ composite. The relative density, the flexural strength and Young's modulus showed the highest value of 98.57[%], 249.42[MPa] and 91.64[GPa] in $SiC-ZrB_2$ composite at room temperature respectively. The electrical resistivity showed the lowest value of $7.96{\times}10^{-4}[\Omega{\cdot}cm]$ for $SiC-ZrB_2$ composite at $25[^{\circ}C]$. The electrical resistivity of the $SiC-TiB_2$ and $SiC-ZrB_2$ composite was all positive temperature coefficient resistance (PTCR) in the temperature ranges from $25[^{\circ}C]$ to $700[^{\circ}C]$. The resistance temperature coefficient of composite showed the lowest value of $1.319\times10^{-3}/[^{\circ}C]$ for $SiC-ZrB_2$ composite in the temperature ranges from $100[^{\circ}C]$ to $300[^{\circ}C]$ Compositional design and optimization of processing parameters are key factors for controlling and improving the properties of SiC-based electroconductive ceramic composites.

• 전기학회논문지
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• 제57권5호
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• pp.808-815
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at 1650[$^{\circ}C$] for 4 hours. The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), ${\beta}$-SiC(3C), $TiB_2$, and In Situ YAG($Al_2Y_3O_{12}$). The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. There is another reason which pressureless annealed temperature 1650[$^{\circ}C$] is lower $300{\sim}450[^{\circ}C]$ than applied pressure sintering temperature $1950{\sim}2100[^{\circ}C]$. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[Mpa], 54.60[Gpa] and 2.84[Gpa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of 0.0117[${\Omega}{\cdot}cm$] for 16[wt%] $Al_2O_3+Y_2O_3$ additives at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from $25^{\circ}C$ to 700[$^{\circ}C$]. The resistance temperature coefficient of composite showed the lowest value of $-2.3{\times}10^{-3}[^{\circ}C]^{-1}$ for 16[wt%] additives in the temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$].

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1252_1253
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• 2009

The composites were fabricated by adding 0, 15, 20, 25[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by spark plasma sintering(hereafter, SPS) were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed in the XRD analysis The relative density of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 90.97[%], 74.62[%], 77.99[%] and 72.61[%] respectively. The XRD phase analysis of the electroconductive SiC ceramic composites reveals high of SiC and $ZrB_2$ and low of ZrO2 phase. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are $4.57{\times}10^{-1}$, $2.13{\times}10^{-1}$, $1.53{\times}10^{-1}$ and $6.37{\times}10^{-2}[{\Omega}{\cdot}cm]$ at room temperature, respectively. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ are Negative Temperature Coefficient Resistance(hereafter, NTCR) in temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$]. It is convinced that SiC+20[vol.%]$ZrB_2$ composite by SPS can be applied for heater above 1000[$^{\circ}C$].