• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.319-325
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• 2017

Through silicon via (TSV) technology is extensively used in 3D IC integrations. The special structure of the TSV is realized by CMP (Chemically Mechanical Polishing) process with a high Cu removal rate and, low dishing, yielding fine topography without defects. In this study, we investigated the electrochemical behavior of copper slurries with various inhibitors in the Cu CMP process for advanced TSV applications. One of the slurries was carried out for the most promising process with a high removal rate (${\sim}18000{\AA}/Min$ @ 3 psi) and low dishing (${\sim}800{\AA}$), providing good microstructure. The effects of pH value and $H_2O_2$ concentration on the slurry corrosion potential and Cu static etching rate (SER) were also examined. The slurry formula with a pH of 6 and 2% $H_2O_2$, hadthe lowest SER (${\sim}75{\AA}/Min$) and was the best for TSV CMP. A novel Cu TSV CMP process was developed with two CMPs and an additional annealing step after some of the bulk Cu had been removed, effectively improving the condition of the TSV Cu surface and preventing the formation of crack defects by variations in wafer stress during TSV process integration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.484-484
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• 2009

반도체 소자가 차세대 초미세 공정 기술 도입의 가속화를 통해 고속화 및 고집적화 되어 감에 따라 나노 (nano) 크기의 회로 선폭 미세화를 극복하고자 최적의 CMP (chemical mechanical polishing) 공정이 요구되어지고 있다. 최근, 금속배선공정에서 높은 전도율과 재료의 값이 싸다는 이유로 Cu를 사용하였으나, 디바이스의 구조적 특성을 유지하기 위해 높은 압력으로 인한 새로운 다공성 막(low-k)의 파괴와, 디싱과 에로젼 현상으로 인한 문제점이 발생하게 되었다. 이러한 문제점을 해결 하고자 본 논문에서는 Cu의 ECMP 적용을 위해 LSV (Linear sweep voltammetry)법을 통하여 알칼리 성문인 $NaNO_3$ 전해액과 산성성분인 $HNO_3$ 전해액의 전압 활성화에 의한 active, passive, transient, trans-passive 영역을 I-V 특성 곡선을 통해 알아보았고, 알칼리와 산성 성분의 전해액이 Cu 표면에 미치는 영향을 SEM (Scanning electron microscopy), EDS (Energy Dispersive Spectroscopy), XRD(X-ray Diffraction)를 통하여 전기화학적 특성을 비교 분석하였다.

• Journal of the Korean Electrochemical Society
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• v.10 no.2
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• pp.94-103
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• 2007

The transition of interconnection metal from aluminum alloy to copper has been introduced to meet the requirements of high speed, ultra-large scale integration, and high reliability of the semiconductor device. Since copper, which has low electrical resistivity and high resistance to degradation, has different electrical and material characteristics compared to aluminum alloy, new related materials and processes are needed to successfully fabricate the copper interconnection. In this review, some important factors of multilevel copper damascene process have been surveyed such as diffusion barrier, seed layer, organic additives for bottom-up electro/electroless deposition, chemical mechanical polishing, and capping layer to introduce the related issues and recent research trends on them.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.53-53
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• 2007

반도체 소자의 고집적화, 미세화 화로 인해 반도체의 동작속도를 증가시키기 위하여 Cu를 이용한 금속배선이 주목받게 되었으나, 높은 압력으로 인한 보은 Cu 영역에서 과잉 디슁 현상과 에로젼을 유도하고 반도체 웨이퍼위의 low-k 물질에 손상을 줌에 따라 메탈라인 브리징과 단락을 초래할 있어, Cu의 단락인 islands를 남김으로서 표면 결항을 제거하지 못한다는 단점을 가지고 있었다. 그래서 이러한 문제점을 해결하기 위하여 기존의 CMP에 전기화학을 결합시킴으로서 낮은 하력에서의 Cu평탄화를 달성할 수 있는 ECMP (electrochemical mechanical polishing)기술이 필요하게 되었다. 따라서 본 논문에서는 전기화학적 기계적 연마(ECMP)작용을 위해, I-V 특성 곡선을 이용하여 패시베이션 막의 active, passive, transient, trans-passive영역의 전기화학적 특성을 비교 분석하였으며, Cu막의 표면 형상을 알아보기 위해 scanning electron microscopy (SEM) 측정과 energy dispersive spectroscopy (EDS)와 X-ray Diffraction (XRD) 분석을 통해 금속 화학적 조성을 조사하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.88-88
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• 2007

Chemical mechanical polishing (CMP) 공정은 그 어원에서 알 수 있듯이 슬러리의 화학적인 요소와 웨이퍼에 가해지는 기계적 압력에 의해 결정되는 평탄화 기술이다. 최근, 금속배선공정에서 높은 전도율과 재료의 값이 싸다는 이유로 Cu률 사용하였으나, 디바이스의 구조적 특성을 유지하기 위해 높은 압력으로 인한 새로운 다공성 막(low-k)의 파괴와, 디싱과 에로젼 현상으로 인한 문제점이 발생하게 되었다. 이러한 문제점을 해결하고자, 본 논문에서는 Cu 표면에 Passivation layer를 형성 및 제거하는 개념으로 공정시 연마제를 사용하지 않으며, 낮은 압력조건에서 공정을 수행하기 위해, 전해질의 농도 변화에 따른 선형추의전압전류법과 순환전압전류법을 사용하여 전압활성화에 의한 전기화학적 반응이 어떤 영향을 미치는지 연구하였다.

• Restorative Dentistry and Endodontics
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• v.16 no.2
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• pp.18-32
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• 1991

The purpose of this study was to observe characteristic properties of amalgam through the polarization curves and SEM images from 4 type amalgams (Amalcap, Shofu spherical. Dispersalloy and Tytin) with 3 different surface finish procedures (polishing, burnishing and carving) by using the potentiostats (EG & GPARC) and SEM (Jeol JSM-35). After each amalgam alloy and Hg was triturated as the direction of the manufacturer by means of mechanical amalgamator (Samki), the triturated mass was inserted into the cylndrical metal mold which was 12 mm in diameter and 10 mm in height and was pressed with $100kg/cm^2$. 4 specimens of each type amalgam were burnished with egg burnisher and another 4 specimens of each type amalgam were carved with Hollenback carver. Above 8 specimens and remaining untreated 4 specimens were stored at room temperature for about 7 days. Untreated 4 specimens of each type amalgam were polished with abrasive papers (Deer) from #400 to #1200 and finally on the polishing cloth with $0.5{\mu}m$ and $0.06{\mu}m$ $Al_2O_3 $ powder suspended water. Anodic polarization measurements was employed to compare the corrosion behaviours of the amalgams in 0.9% saline solution at $37^{\circ}C$. The open circuit potential was determined after 30 minutes immersion of specimen in electrolyte. The scan rate was 1 mV/sec and the surface area of amalgam exposed to the solution was $0.64cm^2$ for each specimen. All the potentials reported are with respect to a saturated calomel electrode (SCE). SEM images of each specimen were taken after + 800 mV (SCE) polarization. The results were as follows: 1. The corrosion potential of high copper amalgam was more anodic than that of low copper amalgam. 2. The polished amalgam were more resistant to corrosion than any other burnished and carved amalgam. 3. In the case of polishing, current density of high copper amalgam was lower than that of low copper amalgam.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.37 no.3
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• pp.319-324
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• 2013

In this study, an EP (electro-polishing)-MAP (magnetic abrasive polishing) hybrid process was developed as a precision finishing process. To evaluate the characteristics of this EP-MAP hybrid process, a series of experiments were carried out using various working gaps, current densities, and electrolyte concentrations. As a result, $NaNO_3$ was found to be very suitable as the electrolyte of the hybrid process because there was no electrochemical reaction with the CNT-Co composite. Moreover, an increase in the magnetic flux density affected the liquidity of the electrolyte and prevented it from flowing into the CNT-Co composite powder. For that reason, the lower liquidity of the electrolyte increased the thermal energy on the surface of the workpiece.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.5
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• pp.227-231
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• 2005

We have developed a microsystem with a capillary electrophoresis (CE) and an electrochemical detector (ECD). The microfabricated CE-ECD systems are adequate for a disposable type and the characteristics are optimized for an application to the electrochemical detection. The system was realized with polydimethylsiloxane (PDMS)-glass chip and indium tin oxide electrode. The injection and separation channels (80 um wide$\ast$40 um deep) were produced by moulding a PDMS against a microfabricated master with relatively simple and inexpensive methods. A CE-ECD systems were fabricated on the same substrate with the same fabrication procedure. The surface of PDMS layer and ITO-coated glass layer was treated with UV-Ozone to improve bonding strength and to enhance the effect of electroosmotic flow. For comparing the performance of the ITO electrodes with the gold electrodes, gold electrode microchip was fabricated with the same dimension. The running buffer was prepared by 10 mM 2-(N-morpholino)ethanesulfonic acid (MES) titrated to PH 6.5 using 0.1 N NaOH. We measured olectropherograms for the testing analytes consisted of catechol and dopamine with the different concentrations of 1 mM and 0.1 mM, respectively. The measured current peaks of dopamine and catechol are proportional to their concentrations. For comparing the performance of the ITO electrodes with the gold electrodes, electropherograms was measured for CE-ECD device with gold electrodes under the same conditions. Except for the base current level, the performances including sensitivity, stability, and resolution of CE-ECD microchip with ITO electrode are almost the same compared with gold electrode CE-ECD device. The disposable CE/ECD system showed similar results with the previously reported expensive system in the limit of detection and peak skew. When we are using disposable microchips, it is possible to avoid polishing electrode and reconditioning.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.54-59
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• 2002

This paper describes a new process technique for batch process of SOI(Si-on-Insulator) structures with buried cavities for MEMS(Micro Electro Mechanical System) applications by SDB(Si-wafer Direct Bonding) technology and electrochemical etch-stop. A low-cost electrochemical etch-stop method is used to control accurately the thickness of SOI. The cavities were made on the upper handling wafer by Si anisotropic etching. Two wafers are bonded with an intermediate insulating oxide layer. After high-temperature annealing($1000^{\circ}C$, 60 min), the SDB SOI structure with buried cavities was thinned by electrochemical etch-stop. The surface of the fabricated SDB SOI structure have more roughness that of lapping and polishing by mechanical method. This SDB SOI structure with buried cavities will provide a powerful and versatile substrate for novel microsensors arid microactuators.

• Journal of the Korean Electrochemical Society
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• v.20 no.1
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• pp.1-6
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• 2017

This study investigated the effect of surface pretreatment, which removes native Cu oxides on Cu seed layer, on subsequent Cu electro-/electroless deposition in Cu interconnection. The native Cu oxides were removed by using citric acid-based solution frequently used in Cu chemical mechanical polishing process and the selective Cu oxide removal was successfully achieved by controlling the solution composition. The characterization of electro-/electrolessly deposited Cu films after the oxide removal was then performed in terms of film resistivity, surface roughness, etc. It was observed that the lowest film resistivity and surface roughness were obtained from the substrate whose native Cu oxides were selectively removed.