• Journal of the Korean Graphic Arts Communication Society
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• v.14 no.1
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• pp.89-114
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• 1996

Liquid crystal-polymer composite(LCPC) films consisting of a continuous LC phase embedded in a three-dimensional network of polymer matrix are formed by photopolymerization-induced phase separ on. The LCPC films are switched from a light-scattering stats to a highly transparent stats on the application of electric fields. Since the alignment of LC molecular determines the electro-optical properties of films, the requirement for good contrast is to generate the nematic phase at high concentration. On the other hand, the concentration of UV-curable monomer must be increased above some critical value to from the flexible matrix of unbounded polymer. The mixing ratio of LC and UV-curable monomer affects the electro-optical and viscoelastic properties of LCPD films in two opposing ways. By controlling the phase separation process, at an LC fraction of 0.7, the maximum performance of LCPC films has been achieved, the response time of which is 2ms on the application of electric fields.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1526-1529
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• 2005

Zinc oxide films have been actively investigated as transparent electrode materials for display. We report the effect of the working pressures on electro-optical properties of Al-doped ZnO thin films deposited by d.c. magnetron sputtering. The resistivity of the ZnO thin films was depended on atomic bombardment effect by working pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.125-128
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• 1998

The electro-optical properties of PDLCs ( Polymer Dispersed Liquid Crystals ) that have been interested for applications to projection display devices lately are significantly improved. For this improvement, we optimized not only the material parameters of liquid crystal and polymer but also the process conditions. Using TL series liquid crystals and polymer PN393 provided from Merck, we obtained the optimized process conditions such as cell gap, LC concentration, curing temperature and curing time. Under these conditions, we have achieved PDLC cells of threshold voltage 2.6V. contrast ratio 260 and negligible hysteresis.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2006.10a
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• pp.67-73
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• 2006

A system in package (SiP) generally contains a variety of systems such as analog, digital, optical and micro-electro-mechanical systems, integrated in a system-level package connected through a substrate. However, there are many electrical and mechanical reliability issues including the reliability issue for embedded structures. A mismatch of thermal coefficients of expansion among packaging materials and devices can lead to warping or delamination in the package. In this study, the effect of material properties of underfill, such as Young's modulus and CTE, are investigated through FEM simulation. Experimental investigation on the warpage of the package is also carried out to verify the simulation results. The results show that the reliability of the system in package is closely related to the material properties of underfill. The results of this study provide a good guidance for the material selection when designing the system in package.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.130-130
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.22.2-22.2
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• 2011

Reliability and degradation mechanism of conventional phosphor-converted white GaN-based light-emitting diodes (LEDs) were investigated. Under electro-thermal stress condition, the optical output degraded rapidly at the initial stress time accompanied by the change of chromatic properties. This could be attributed to the optical degradation of packaged materials, in particular, the browning of encapsulants and the darkening of reflective packages. At longer stress times, the optical output gradually decreased according to the degree of the reverse leakage currents, namely, the generation ofnonradiative recombination defects. This indicates that the optical degradation of white LEDs are dominated by the darkening of packaged materials and the generation of defects depending on the injection current and ambient temperatures. Using analyses of electroluminescence spectra, optical microscopy, electrical, optical, and thermal properties, optical degradations of white LEDs are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.316-316
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• 2008

Using an evaporation method, $SiO_2$ was deposited as a buffer layer between a flexible PET substrate and a ITO film deposited by DC magnetron sputtering and electro-optical properties were investigated with thickness variance of $SiO_2$ layers. After coating a $SiO_2$ layer and a ITO film, the ITO/$SiO_2$/PET was heated up to $200^{\circ}C$ and the resistivity and the transmittance were measured by hall effect measurement system and UV/VIS/NIR spectroscopy. As a result of depositing a $SiO_2$ buffer layer, the resistivity increased and the transmittance and adhesion property were enhanced than ITO films with no buffer layers and the resistivity was lowered as $SiO_2$ thickness increased from 50 $\AA$ to 100 $\AA$. It was found that the transmittance was independent of annealing temperature variance in $150^{\circ}C{\sim}200^{\circ}C$ and the resistivity decreased as the temperature increased and especially decreasing rate of the resistivity was higher as the buffer layer thickness was thinner. So under optimized depositing of $SiO_2$ buffer layers and post-annealing of ITO/$SiO_2$/PET, ITO films with enhanced adhesion, electro-optical properties can obtained.

• Journal of Surface Science and Engineering
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• v.42 no.1
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• pp.21-25
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• 2009

Using an evaporation system, $SiO_2$ was deposited as a buffer layer between a PET substrate and a ITO layer and then ITO/$SiO_2$/PET layers were annealed for 1.5 hours at the temperature of $180^{\circ}C$. Adhesion and electro-optical properties of ITO films were studied with thickness variance of a $SiO_2$ buffer layer. As a result of introduction of the $SiO_2$ buffer layer, sheet resistance and resistivity increased and a ITO film with optimum sheet resistance ($529.3{\Omega}/square$) for an upper ITO film of resistive type touch panel could be obtained when $SiO_2$ of $50{\AA}$ was deposited. And it was found that ITO films with $SiO_2$ buffer layer have higher transmittance of $88{\sim}90%$ at 550 nm wavelength than ITO films with no buffer layers and the transmittance was enhanced as $SiO_2$ thickness increased from $50{\AA}$ to $100{\AA}$. Adhesion property of ITO films with $SiO_2$ buffer layers became better than ITO films with no buffer layers and this property was independent of $SiO_2$ thickness variance ($50{\sim}100{\AA}$). By depositing a $SiO_2$ buffer layer of $50{\AA}$ on the PET substrate and sputtering a ITO thin film on the layer, a ITO film with enhanced adhesion, electro-optical properties could be obtained.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1077-1079
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• 2008

Nanoparticles-induced vertical alignment (NIVA) in the liquid crystal (LC) devices was observed and has been applied successfully on fabricating the hybrid-aligned nematic LC cells and guest-host LC cells. In this talk, we will discuss the characteristics of the electric and optical properties of NIVA-LC cells with different dopant concentrations and demonstrate that nanoparticles can be spin-coated on the substrate at a low temperature.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.34-35
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• 2000

A Y-branch phase modulator made of an electro-optic(EO) polymer has been designed and fabricated. An EO polymer, PMMA-DR1, is used for the core layer, and UV-curable polymers, UV-15 and UV-15 LV, for the cladding layers. The rib type polymeric waveguides are fabricated by the reactive ion etching method and their EO effects are obtained by the poling process. The optical properties of the fabricated phase modulator are as follows: the halfwave voltage, $V_{\pi}$, is 25 V, the insertion loss of TM mode is 13.8 dB, and the intensity modulation is 0.17 % (V).