• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.425-431
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• 1999

$Pb(Zr_{0.52}, Ti_{0.48})O_3$ (PZT) thick films as an actuating material with conducting oxides, $(La_{0.5}Sr_{0.5}) CoO_3$ (LSCO), have been fabricated by sol-gel method for Optical Micro-Electro-Mechanical System (MEMS) devices, in which PZT/LSCO/SiO2 structures were used. In order to improve the adhesion to LSCO solution in order to enhance the wetting behavior of a water-based LSCO precursor solution and further to improve the adhesion between LSCO and $SiO_2$ layers. PZT films were made using 1-3 propanediol based precursor solution which has a high viscosity and a boiling point appropriate for thick film fabrication. In the precursor solution, Ti-propoxied and Zr-propoxied are partially substituted with acetylacetone to achieve the solution stability while maintaining reactivity. Crack free PZT films (0.8~1$\mu\textrm{m}$) have been successfully fabricated at crystallization temperatures above $700^{\circ}C$. Dielectric constants and dielectric losses of the PZT films were 900~1200and 2~5%, respectively. Piezoelectric constant $d_{33}$ of the PZT films constrained by a substrate were 200pm/V at 100kV/cm.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1583-1586
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• 2006

All non-dopant white organic light-emitting diodes (WOLEDs) have been realized by using solid state highly fluorescent red bis(4-(N-(1- naphthyl)phenylamino)phenyl)fumaronitrile (NPAFN) and amorphous bipolar blue light-emitting 2-(4- diphenylamino)phenyl-5-(4-triphenylsilyl)phenyl- 1,3,4-oxadiazole (TPAOXD), together with well known green fluorophore tris(8- hydroxyquinolinato)aluminum $(Alq_3)$. The fabrication of multilayer WOLEDs did not involve the hard-tocontrol doping process. Two WOLEDs, Device I and II, different in layer thickness of $Alq_3$, 30 and 15 nm, respectively, emitted strong electroluminescence (EL) as intense as $25,000\;cd/m^2$. For practical solid state lighting application, EL intensity exceeding $1,000\;cd/m^2$ was achieved at current density of $18-19\;mA/cm^2$ or driving voltage of 6.5-8 V and the devices exhibited external quantum efficiency $({\eta}_{ext})$ of $2.6{\sim}2.9%$ corresponding to power efficiency $({\eta}_P)$ of $2.1{\sim}2.3\;lm/W$ at the required brightness.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.41 no.6
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• pp.33-41
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• 2004

This paper proposes a color matching 3D look-up table simplifying the complex color matching procedure between a monitor and a mobile display device. In other to perform color matching, it is necessary to process color of image in the device independent color space like CIEXYZ or CIELAB. To obtain the data of the device independent color space from that of the device dependent RGB color space, we must perform display characterizations. LCD characterization error using S-curve model is larger than tolerance error since LCD is more nonlinear than CRT. This paper improves the S-curve model to have smaller characterization error than tolerance error using the electro-optical transfer functions of X, Y, and Z value. We obtained images having higher color fidelity on mobile display devices through color matching experiments between monitor and mobile display devices. As a result of this experiments, we concluded that the color matching look-up table with 64(4${\times}$4${\times}$4) is the smallest size allowing characterization error to be acceptable.

• Journal of Information Display
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• v.2 no.2
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• pp.52-60
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• 2001

The electrical and mechanical properties in indium-tin-oxide films deposited on polymer substrate were examined. The materials of substrates were polyethersulfone (PES) which have gas barrier layer and anti-glare coating for plastic-based devices. The experiments were performed by rf-magnetron sputtering using a special instrument and buffer layers. Therefore, we obtained a very flat polymer substrate deposited ITO film and investigated the effects of buffer layers, and the instrument. Moreover, the influences of an oxygen partial pressure and post-deposition annealing in ITO films deposited on polymer substrates were clarified. X-ray diffraction observation, measurement of electrical property, and optical microscope observation were performed for the investigation of micro-structure and electro-mechanical properties, and they indicated that as-deposited ITO thin films are amorphous and become quasi-crystalline after adjusting oxygen partial pressure and thermal annealing above $180^{\circ}C$. As a result, we obtained 20-25 ${\Omega}/sq$ of ITO films with good transmittance (above 80 %) of oxygen contents with under 0.2 % and vacuum annealing. Furthermore, using organic buffer layer, we obtained ITO films which have a rather high electrical resistance (40-45 ${\Omega}/sq$) but have improved optical (more than 85 %) and mechanical characteristics compared to the counterparts. Consequently, a prototype reflective color plastic film LCD was fabricated using the PES polymer substrates to confirm whether the ITO films could be realized in accordance with our experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.41-41
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• 2008

In general, polyimides (PIs) are used in alignment layers in liquid crystal displays (LCDs). The rubbing alignment technique has been widely used to align the LC molecules on the PI layer. Although this method is suitable for mass production of LCDs because of its simple process and high productivity, it has certain limitations. A rubbed PI surface includes debris left by the cloth, and the generation of electrostatic charges during the rubbing induces local defects, streaks, and a grating-like wavy surface due to nonuniform microgrooves that degrade the display resolution of computer displays and digital television. Additional washing and drying to remove the debris, and overwriting for multi-domain formation to improve the electro-optical characteristics such as the wide viewing angle, reduce the cost-effectiveness of the process. Therefore, an alternative to non-rubbing techniques without changing the LC alignment layer (i.e, PI) is proposed. The surface of LC alignment layers as a function of the ion beam (IE) energy was modified. Various pretilt angles were created on the IB-irradiated PI surfaces. After IB irradiation, the Ar ions did not change the morphology of the PI surface, indicating that the pretilt angle was not due to microgrooves. To verify the compositional behavior for the LC alignment, the chemical bonding states of the ill-irradiated PI surfaces were analyzed in detail by XPS. The chemical structure analysis showed that ability of LCs to align was due to the preferential orientation of the carbon network, which was caused by the breaking of C=O double bonds in the imide ring, parallel to the incident 18 direction. The potential of non-rubbing technology for fabricating display devices was further conformed by achieving the superior electro-optical characteristics, compared to rubbed PI.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.197-202
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• 2001

M $g_{1-x}$ Z $n_{x}$O thin films with various composition x of ZnO were fabricated by a RF magnetron sputtering method, which is expected to improve the electro-optical properties of the conventional MgO protective layer for AC-PDP. Test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer have been fabricated in order to investigate the effects of ZnO doping on the electrical characteristics of devices such as the discharge voltages and the memory gain. Experimental results revealed that test panels with the $Mg_{1-x}$Z $n_{x}$O(x=0.5at%) protective layer show lower firing and sustain voltages than those seen in panels with MgO protective layer by 20V. resulting in an increasement of the memory coefficient. In addition, it was found that test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer show higher discharge intensity, i. e., higher plasma density, compared with panels with MgO protective layer.ve layer.layer.

• Korean Journal of Materials Research
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• v.10 no.4
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• pp.290-294
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• 2000

ZnS:Mn TFEL devices were fabricated by electron-beam evaporation method and then the electro-optical properties were investigated. To investigate the capacitance which was due to oxygen vacancy at the $Ta_2O_5$ thin film, AES(Auger Electron Spectroscopy) and C-F(capacitance-frequency) measurements were used. It was found that the capacitance was decreased by annealing the $Ta_2O_5$ film in oxygen ambience. From EL emission measurement, we observed the EL emission spectrum which had the peak range from 550nm and 650nm. This emission is associated with the transition from $^4T_1(^4G)$ first excited state to $^6A_1(^6S)$ ground state in the $3d^5$ energy level configuration of $Mn^{2+}$ occurs. The threshold voltage of EL device with $Ta_2O_5$ insulator layer was found to be 24V~28V. The CIE color coordinates of these emission are X=0.5151, Y=0.4202 which is yellowish orange emitting. The EL device using $Ta_2O_5$ insulator layer can be driven with a low voltage which is beneficial to the practical application.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.2
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• pp.106-112
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• 2010

In order to compete with other flat display devices such as Liquid Crystal Displays (LCDs) and organic light emitting diodes (OLEDs), Plasma Display Panels (PDPs) require to have high performances like high image quality, low power consumption and high speed driving. In this paper, Fe doped MgO protective layer was introduced for higher performance. Both the surface characteristics of the deposited thin films and the electro-optical properties of 4 inch test panels were investigated. It has been demonstrated experimentally that ac PDP with Fe doped MgO protective layer has lower discharge voltage than that of undoped MgO film, which corresponds to measured secondary electron emission coefficients. The crystallinity and surface roughness of thin films were determined by XRD patterns and AFM images. In addition, ac PDP with Fe doped MgO protective layer has improved address discharge time lag for high speed driving.

• Journal of the Korean Chemical Society
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• v.41 no.3
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• pp.144-149
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• 1997

Organic electroluminescence devices(ELD) were fabricated using by molecularly doped method with N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD) as a hole transport agent, squarylium dye as an emitting agent, and side chain liquid crystalline polymer(MCH) as matrix for TPD. An indium-tin-oxide(ITO) coated glass and an Mg electrode were used as the hole and the electron injecting electrode, respectively. The highest stability of ELD was obtained by spin coating method using dichloroethane as a solvent at a polymer/TPD concentration of 0.005 wt%. For the EL cell with ITO/polymer-TPD/SQ dye/Mg structure, we achieved light red luminescence at a current of 102 mA/$cm^2$ with an applied voltage of 23 V.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2116-2118
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• 2000

In the technique of Q-switching, very fast electronically controlled optical shutters can be made by using the electro-optic effect in crystals or liquids. The driver for the Pockels cell must be a high-speed, high-voltage switch which also must deliver a sizeable current. Common switching techniques include the use of vacuum tubes, cold cathode tubes, thyratrons, SCRs, and avalanche transistors. Semiconductor devices such as SCRs, avalanche transistors, and MOSFETs have been successfully employed to drive Pockels cell Q-switch. In this study, a simple driver for the Pockels cell Q-switch was developed by using SCRs, pulse transformer and TTL ICs. The Pockels cell Q-switch which was operated by this driver was employed in pulsed Nd:YAG laser system to investigate the operating characteristics of this Q-switch. And we have investigated the output characteristics of this Q-switch as a function of the Q-switch delay time to Xe flashlamp current on.