• Korean Journal of Optics and Photonics
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• v.6 no.1
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• pp.26-32
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• 1995

A Kerr cell was utilized as an optical shutter to generate a shortened pulse and as an isolator between amplifiers in an iodine laser system. By rotating the polarization of incident laser pulse only during the timing window of high voltage applied to the Kerr cell, shortened pulses of 5 ns and 1 ns, corresponding to the difference in propagation time of two coaxial cables, were obtained. It was also noticed that more than one timing window of Kerr cell was produced with a long incident laser pulse from the oscillator. The measured transmittance of Kerr cell with respect to applied voltage was compared with the theoretical estimation using the electro-optic Kerr effect theory. Through the amplification of the shortened pulse in iodine amplifiers. a pulse of 0.5 GW(2 J in 4 ns) was obtained. ained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.297-298
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• 2005

We have fabricated twisted nematic (TN) liquid crystal cells doped by carbon nanotubes (CNTs) with different CNT wt. %. With a minute amount doping, multi-walled CNTs did not perturb the liquid crystal orientations at the off- and on-state. The hysteresis studies of voltage-dependent capacitance (V-C) under the influence of electric field generated by ac and dc voltage show that the residual do, which is tightly related to image sticking problem in liquid crystal displays, is greatly reduced due to ion trapping by CNTs. Also, the V-C hysteresis shows dependency of capacitance on concentration of multi-walled CNTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.89-95
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• 2005

We derived a formula which can calculate the space distribution of refractive index variation by an applied electric field about Bi$_{12}$ GeO$_{20}$ single crystal. Stereographic projection maps of refractive index variation by an applied electric field were made out using numerical value to be calculated by this formula. By the calculated results, since an electric field had applied to [(equation omitted) 1 1] direction and [1 (equation omitted) 1] direction of Bi$_{12}$ GeO$_{20}$ crystal, positive variation of the refractive index of [(equation omitted) 1 1] direction and [1 (equation omitted) 1] direction was the largest. The incremented refractive index per unit electric field was +3.2410${\times}$10$^{-11}$ V$^{-1}$ for the wavelength of 6328 $\AA$. Since an electric field had applied to [1 1 1] direction and [(equation omitted) 1] direction, negative variation of the refractive index of [1 1 1] direction and [(equation omitted) 1] direction was the largest. The decremented refractive index per unit electric field was -3.2410${\times}$10$^{-11}$ V$^{-1}$ for the wavelength of 6328 $\AA$.

• Korean Journal of Optics and Photonics
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• v.4 no.3
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• pp.323-329
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• 1993

In this paper, dependence of the diffraction efficiency upon incident light intensity is studied. The conductivity ratio, which is dependent upon the incident light intensity, changes the static electric field in a crystal. This change of the static electric field modulates the refractive index via linear electro-optic effect. And the change of the refractive index affects the diffraction efficiency. It is found that experimental results with $Fe:LiNbO_3$ crystals are in good agreement with the theory.

• Korean Journal of Materials Research
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• v.12 no.4
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• pp.254-258
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• 2002

To realize channel cross-connecting in optical communications systems, a high speed optical matrix switch was fabricated using z-cut $LiNbO_3$. For switch fabrication was design bending structure and coupling length and four $2{\times}2$ directional couplers were integrated on one substrate far construction of a $4{\times}4$ switch. Single-mode optical waveguides were formed by Ti-diffusion at a wet $O_2$ atmosphere. Ti-diffusion profile, refractive index variation and waveguide morphology were analyzed by Prism coupler and optical microscopy, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.366-367
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• 2006

Different orientated SBN thin films were deposited by Ion Beam Sputtering, and electric properties were measured on each orientation. Ferroelectric $Sr_xBa_{1-x}Nb_2O_6$(SBN) has excellent electro-optic, photo-refractive, piezoelectric, pyroelectric properties. SBN thin film has been deposited by various method, of sol-gel, PLD, CVD, sputtering, etc.. To avoid lead pollution of Pb-system perovskite ferroelectric materials. SBN thin films were fabricated for pyroelectric IR sensor. Using the ceramic target of the same composition and Pt(100)/$TiO_2/SiO-2$/Si(100) substrate, crystallization and orientation behavior as well as electric properties of the films were examined. Seed layer and thin films thickness was controlled to observe the effect on preferred orientation. We measured I-V, C-V, P-E hysteresis to characterize electric-properties on each orientations.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.36-43
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• 2002

In this study, the nanosized ZnS thin films that can be used for fabrication of blue light-emitting diodes, electro-optic modulators, and n-window layers of solar cells were grown by the solution growth technique (SGT), and their surface morphology and film thickness and grain size dependence on the growth conditions were examined. Based on these results, the quantum size effects of ZnS were systematically investigated. Governing factors related to the growth condition were the concentration of precursor solution, growth temperature, concentration of aq. ammonia, and growth duration. X-ray diffraction patterns showed that the ZnS thin film obtained in this study had the cubic structure ($\beta$-ZnS). With decreasing growth temperature and decreasing concentration of precursor solution, the surface morphology of film was found to be improved. Also, the film thickness depends largely on the ammonia concentration. In particular, this is the first time that the surface morphology dependence of ZnS film grown by SGT on the ammonia concentration is reported. The energy band gaps of samples were determined from the optical transmittance values, and were shown to vary from 3.69 eV to 3.91 eV. These values were substantially higher than 3.65 eV of bulk ZnS. It was also shown that the quantum size effect of SGT grown ZnS is larger than that of the ZnS films grown by most other growth techniques.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.466-471
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• 1994

The polymeric titania sol was prepared via partial hydrolysis of titanium isopropoxide and its characteristics were investigated. The effect of solvent, catalyst and water content on the sol stability was investigated. The shear viscosities of sol solution at different temperatures were measured to determine the gel time. Employing the spin coating technique, optically clear and transparent titanium oxide thin film was fabricated. Even after doped with second-order nonlinear optical(NL0) active monomers, the film quality was maintained very homogeneous. The film was corona-poled under 3~ 5kV at 50~$100^{\circ}C$ range. The electro-optic coefficient, $r_{33}$ was measured to be 1.5~5pm/V using the wavelength, 632.8nm from He-Ne laser.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.723-727
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• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin film of $1000{\AA}$ was pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $3000{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800^{\circ}C$ in air, respectively The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was no difference in the crystal structure with heat-treatment temperature, but the electric properties depended on the heating temperature and was the best at $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15{\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1075, respectively.

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.144-151
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• 1994

We designed and fabricated a $2{\times}4$ symmetric self electro-optic effect device array using GaAs/ AIo.04 G$\DeltaR$), and optical bistability loop width ($\Delta$). The average values of the elements of the $2{\times}4$ S-SEED array were CR~13.1, R~24%, and $\Delta$~91%. It was found that the AFP cavity structure enhances the self-biased optical bistability in ESQW-SEED under no external bias. That is due to the decreased intrisic region thickness in AFP-SEED structures, and which increases the built-in electric fields. The zero-biased S-SEED showed CR of ~4.7, R~9%, and $\Delta$~22%.X>~22%.