• Title/Summary/Keyword: Electro-deposition

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A Study of the Electroless Ni-W-B Depsition on Alumina Ceramics (Alumina Ceramics상의 무전해 Ni-W-B 도금에 관한 연구)

  • 유능희;강성군
    • Journal of the Korean institute of surface engineering
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    • v.22 no.4
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    • pp.161-167
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    • 1989
  • Effects of bath composition on electroless deposition of Ni-W-B from sulphate solution were invesrigated in terms of deposition kinetics, electro resistivity and composition of deposit film. The microstruigated and crystataine structure of the films were also studied using a scanning electron microscope and X-ray diffractometer. The deposition rate increased linearly with increasing the concentration of nickel sulphate in bath solution, wheras the rate decreasing with sodium citrate. The rate was also affected by sodium tungstate, which was maaximum at the concentration of 0.06 M/1 in sodium tungstate, The content of W in the deposit increased with increased with increasing the sodium citrate had on opposite effect on the composition of W and B in the deposit. The crystal change film from armorphous to cryatallicne nature by heat treatments was proved by the reduction of specific resistance and X-ray diffration.

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A Study on the Pd-Ni Alloy Hydrogen Membrane Using the Sputter Deposition (스퍼터 증착 방식으로 제조된 Pd-Ni 합금 수소 분리막 연구)

  • Kim Dong-Won;Park Jeong-Won;Kim Sang-Ho;Park Jong-Su
    • Journal of the Korean institute of surface engineering
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    • v.37 no.5
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    • pp.243-248
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    • 2004
  • A palladium-nikel(Pd-Ni) alloy composite membrane has been fabricated on microporous nickel support formed with nickel powder. Plasma surface treatment process is introduced as pre-treatment process instead of HCI activation. Pd coating layer was prepared by dc magnetron sputtering deposition after $H_2$ plasma surface treatment. Palladium-nickel alloy composite layer had a fairly uniform and dense surface morphology. The membrane was characterized by permeation experiments with hydrogen and nitrogen gases at temperature of 773 K and pressure of 2.2psi. The hydrogen permeance was 6 ml/minㆍ$\textrm{cm}^2$ㆍatm and the selectivity was 120 for hydrogen/nitrogen($H_2$/$N_2$) mixing gases at 773 K.

Formation of Diamond/Mo/Ni Multi-Layer on Steel Substrate (강 표면의 다이아몬드/몰리브데늄/니켈 복합층의 생성)

  • Lee, H.J.;J.I. Choe;Park, Y.
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2002.05a
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    • pp.37-37
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    • 2002
  • Diamoncl/Mo/Ni multi-layers on SKH-51 steel substrate was prepared to improve the abrasive wear resistance of a tool and die by a commercial chemical vapor deposition unit and electro-plating. The diamond after 7 hour deposition had cuba-octahedral structure with 2~5$\mu\textrm{m}$ grains. The existence of non-ferrous metals such as chromium, nickel and molybdenum between diamond and SKH-51 substrate results in forming higher quality of diamond layer by retarding carbon diffusion in the diamond layer during deposition, and also improving hardness and wear resistance. Surface cracks on the film was sometimes observed by the difference of by the thermal expansion coefficients between the steel substrate and the deposited layers during cooling.

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Effect of the particle size on the electrical contact in selective electro-deposition of copper (구리의 선택적 전착에서 결정 입자의 크기가 전기적 접촉성에 미치는 영향)

  • Hwang, Kyu-Ho;Lee, Kyung-Il;Joo, Seung-Ki;Kang, Tak
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.1 no.2
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    • pp.79-93
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    • 1991
  • With the advent of ULSI, many problems in previous metallization techniques and interconnection materials have become more serious. In this work, selective deposition of copper to fill the submicron contact has been tried. After forming electro-deposited copper films on p-type (100) silicon wafer using 0.75M $CuSO_4{\cdot}$5H_2O$ as an electrolyte, the effect of deposition time, current density and concentration of an additive on film properties were investigated. Film thickness, particle size and resistivity were analyzed by Alpha Step, SEM and 4 - point probe measurement respectively. The deposition rate was about $0.5-0.6\mu\textrm{m}$/min at $2A/dm^2$ and the particle size increased with increasing current density. The resistivities of electro-deposited copper films were about $3-6{\mu}{\Omega}{\cdot}$cm for the particle size above $4000{\AA}$. By the addition of 0.2 g/l gelatin, the particle size was reduced to less than $0.1{\mu}m $ and selective plugging of copper on submicron contacts could be successfully achieved.

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Surface Electrode Modification and Improved Actuation Performance of Soft Polymeric Actuator using Ionic Polymer-Metal Composites (이온성고분자-금속복합체를 이용한 유연고분자 구동체의 표면특성 개선과 구동성 향상)

  • Jung, Sunghee;Lee, Myoungjoon;Song, Jeomsik;Lee, Sukmin;Mun, Museoung
    • Applied Chemistry for Engineering
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    • v.16 no.4
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    • pp.527-532
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    • 2005
  • Ionic polymer metal composites (IPMC) are soft polymeric smart materials having large displacement at low voltage in air and water. The polymeric electrolyte actuator consists of a thin and porous membrane and metal electrodes plated on both faces, in impregnation electro-plating method. The response and actuation of actuator are governed. Among many factors governing the activation and response of IPMC actuator, the surface electrode plays an important role. In this study, the well-designed modification of electrode surface was carried out in order to improve the chemical stability well as electromechanical characteristics of the IPMC actuator. We employed Ion Beam Assisted Deposition (IBAD) method to prepare the topologically homogeneous thin surface electrode. After roughing the surface of Nafion membrane in order to get a larger surface area, the IPMC was prepared by impregnation for electro-plating and re- coating on the surface through traditional chemical deposition, followed by an additional surface treatment with high conductive metals with IBAD. It was observed that our IPMC specimen shows the enhanced surface electrical properties as well as the improved actuation and response characteristics under applied electric field.

Development of the Organic Solar Cell Technology using Printed Electronics (인쇄전자 기술을 이용한 유기 태양전지 기술 개발)

  • Kim, Jungsu;Yu, Jongsu;Yoon, Sungman;Jo, Jeongdai;Kim, Dongsoo
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.113.1-113.1
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    • 2011
  • PEMS (printed electro-mechanical system) is fabricated by means of various printing technologies. Passive and active compo-nents in 2D or 3D such as conducting lines, resistors, capacitors, inductors and TFT(Thin Film Transistor), which are printed withfunctional materials, can be classified in this category. And the issue of PEMS is applied to a R2R process in the manu-facturing process. In many electro-devices, the vacuum process is used as the manufacturing process. However, the vacuum process has a problem, it is difficult to apply to a continuous process such as a R2R(roll to roll) printing process. In this paper, we propose an ESD (electro static deposition) printing process has been used to apply an organic solar cell of thin film forming. ESD is a method of liquid atomization by electrical forces, an electrostatic atomizer sprays micro-drops from the solution injected into the capillary with electrostatic force generated by electric potential of about several tens kV. ESD method is usable in the thin film coating process of organic materials and continuous process as a R2R manufacturing process. Therefore, we experiment the thin films forming of PEDOT:PSS layer and active layer which consist of the P3HT:PCBM. The organic solar cell based on a P3HT/PCBM active layer and a PEDOT:PSS electron blocking layer prepared from ESD method shows solar-to-electrical conversion efficiency of 1.42% at AM 1.5G 1sun light illumination, while 1.86% efficiency is observed when the ESD deposition of P3HT/PCBM is performed on a spin-coated PEDOT:PSS layer.

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Characteristic of Through Silicon Via's Seed Layer Deposition and Via Filling (실리콘 관통형 Via(TSV)의 Seed Layer 증착 및 Via Filling 특성)

  • Lee, Hyunju;Choi, Manho;Kwon, Se-Hun;Lee, Jae-Ho;Kim, Yangdo
    • Korean Journal of Materials Research
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    • v.23 no.10
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    • pp.550-554
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    • 2013
  • As continued scaling becomes increasingly difficult, 3D integration has emerged as a viable solution to achieve higher bandwidths and good power efficiency. 3D integration can be defined as a technology involving the stacking of multiple processed wafers containing integrated circuits on top of each other with vertical interconnects between the wafers. This type of 3D structure can improve performance levels, enable the integration of devices with incompatible process flows, and reduce form factors. Through silicon vias (TSVs), which directly connect stacked structures die-to-die, are an enabling technology for future 3D integrated systems. TSVs filled with copper using an electro-plating method are investigated in this study. DC and pulses are used as a current source for the electro-plating process as a means of via filling. A TiN barrier and Ru seed layers are deposited by plasma-enhanced atomic layer deposition (PEALD) with thicknesses of 10 and 30 nm, respectively. All samples electroplated by the DC current showed defects, even with additives. However, the samples electroplated by the pulse current showed defect-free super-filled via structures. The optimized condition for defect-free bottom-up super-filling was established by adjusting the additive concentrations in the basic plating solution of copper sulfate. The optimized concentrations of JGB and SPS were found to be 10 and 20 ppm, respectively.

Electro-chemical Mechanical deposition for the planarization of Cu film (Cu 배선의 평탄화를 위한 ECMD에 관한 연구)

  • Jeong, Suk-Hoon;Seo, Heon-Duk;Park, Boum-Young;Lee, Hyun-Seop;Jung, Jae-Woo;Park, Jae-Hong;Jeong, Hae-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.649-650
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    • 2005
  • 반도체는 고집적화, 고속도화, 저전력화를 목적으로 발전하고 있다. 이를 위하여 design rule의 감소, 새로운 물질과 프로세스의 적용 등 많은 연구가 이루어지고 있으며, RC delay time을 줄이기 위한 Cu 와 저유전율 재료의 적용이 그 대표적인 예라 할 수 있다. Cu 배선은 기존의 Al 배선에 비하여 높은 전자이동 (electro-migration)과 응력 이동 (stress-migration) 저항을 가짐으로써 전기적인 성능 (electrical performance) 에서 이점을 가지고 있다. 반도체에서의 Cu 배선 구조는 평탄화된 표면 및 배선들 사이에서의 좋은 전기적인 절연성을 가져야 하며, 이는 디싱(dishing)과 에로젼(erosion)의 중요한 인자가 된다. 기존의 평탄화 공정인 Cu CMP(Chemical Mechanical Polishing)에 있어서 이러한 디싱, 에로전과 같은 결함은 선결되어져야 할 문제로 인식되고 있다. 따라서 본 연구에서는 이러한 결합들을 감소시키기 위한 새로운 평탄화 방법으로 Cu gap-filling 을 하는 동시에 평탄화된 표면을 이루는 ECMD(Electro-Chemical Mechanical Deposition) 공정의 전기적 기계적 특성을 파악하였다.

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AES Analysis of Au, Au/Cr, Au/Ni/Cr and Au/Pd/Cr Thin Films by the Change of Substrate Temperature and Annealing Temperature (기판온도와 열처리온도의 변화에 따른 Au/Cr, Au/Ni/Cr 및 Au/Pd/Cr 다층박막의 AES 분석)

  • Yoo, Kwang Soo;Jung, Hyung Jin
    • Analytical Science and Technology
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    • v.6 no.2
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    • pp.217-223
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    • 1993
  • Thin films of the Au/Cr, Au/Ni/Cr and Au/Pd/Cr systems were deposited on alumina substrates at ambient temperature and $250^{\circ}C$ in a high-vacuum resistance heating evaporator and annealed at $300^{\circ}C$, $450^{\circ}C$ and $600^{\circ}C$ for 1 hour in air, respectively. The film thicknesses of Au, Ni(or pd), and Cr were $1000{\AA}$, $300{\AA}$, and $50{\AA}$, respectively. The substrate temperature during deposition and the post-deposition annealing temperature affected the sheet resistance of thin-films due to the inter-diffusion of each layer. As a result of Auger depth profile analysis, in the Au/Cr system Cr already diffused out to Au surface during deposition at the substrate temperature of $250^{\circ}C$ and Au distribution changed after heat treatment. In the Au/Ni/Cr and Au/Pd/Cr systems, diffusion phenomena of Ni and Pd were found and especially Ni (approximately 45 at.%) diffused out to Au surface and oxidized.

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Effect of the Surface Electrode Formation Method and the Thickness of Membrane on Driving of Ionic Polymer Metal Composites (IPMCs) (표면전극 형성 방법과 이온-교환막 두께가 이온성 고분자-금속 복합체(IPMC) 구동에 미치는 영향)

  • Cha, Gook-Chan;Song, Jeom-Sik;Lee, Suk-Min;Mun, Mu-Seong
    • Polymer(Korea)
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    • v.30 no.6
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    • pp.471-477
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    • 2006
  • Ion exchange metal composite(IPMC) has toughness equivalent to the range of human's muscle, transformation-actuation force by relatively low voltage and the fast response time. Thus, as a new method for preparing thicker IPMC, the solution casting method to make the films of various thicknesses out of liquid nation was attempted in this study. To reduce the surface resistance of electrode, the first plated electrode prepared by Oguro method was replated with Au and Ir using ion beam assisted deposition(IBAD). The microstructures of electrode surfaces before and after IBAD plating were investigated using SEM. The change of water and ion-conductivity in IPMC were measured under applied voltage. The displacement and driving force of IPMCs with various thicknesses were measured to evaluate the driving properties.