• 한국광학회:학술대회논문집
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• 한국광학회 2007년도 하계학술발표회 논문집
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• pp.101-101
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• 2007

• 한국광학회:학술대회논문집
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• 한국광학회 2007년도 하계학술발표회 논문집
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• pp.103-103
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• 2007

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.363-367
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• 2006

We synthesized new blue and bluish green emitting materials by using fully substituted ethylene moieties. Multi-layered EL devices were fabricated with synthesized materials and evaluated in terms of emission color and luminescence efficiency. BPBAPE[EML 4] having high $T_g$ of $155^{\circ}C$ showed luminance and power efficiency of 10.33cd/A and 4.0 lm/W without any doping agent. BTBPPA[EML 5] exhibited 5cd/A and 1.67lm/W efficiency with blue CIE value of (0.165, 0.195).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2003년도 제24회 학술발표회 초록집
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• pp.127-127
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• 2003

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.53.3-53
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• 1998

• 반도체디스플레이기술학회지
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• 제17권3호
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• pp.10-16
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• 2018

In silicon crystalline PV (Photo Voltaic) industry, PV module or panel electric power is directly related to the companies' profit. Thus, many PV companies have invested and focused on R&D activities to get the higher module power. The main BOM (Bills of Material) on the module consists of PV solar cell, ribbon, EVA (Ethylene-Vinyl Acetate copolymer), glass and back sheet. Based on consistent research efforts on enhancing module power using BOM, there have been increase of around 5 watt per module every year as results. However, there are lack of studies related to enhancing accuracy of measurement. In this study, the enhancing on the metrology is investigated and the improvement shows actually contribution to company's profit. Especially, the measurement issues related to heat and to quasi state of bandgap diagram by EL(Electro Luminescence) are described in this study.

• Journal of Information Display
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• 제8권1호
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• pp.10-13
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• 2007

We synthesized new blue and bluish green emitting materials by using fully substituted ethylene moieties. Multi-layered EL devices were fabricated with synthesized materials and evaluated in terms of emission color and luminescence efficiency. TBBPE[EML 2] device showed bluish-green CIE value of (0.236, 0.412) and 5.02cd/A at $10mA/cm^2$. BPBBPE[EML 3] device also showed sky-blue CIE value of(0.218, 0.355) and 2.31cd/A at $l0mA/cm^2$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 학술대회 논문집 전문대학교육위원
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• pp.110-113
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• 2002

Organic EL has been expected to adopt to a new styles of technology that make flat display after Tang & Vanslyke made good electric luminescence device in late 1980s. Their studies based on multi layer structure that consists of emitting layer and carrier transporting layer using proper organic material. In this study. we made multi layer device using $Eu(TTA)_3(phen)$ as a luminescence material by PVD and investigate luminous properties of each device. But oxidization of organic layer by ITO. energy walls in both pole interface. contaminations of ITO surface, importance of protecting membrane, diffusive dimming of light to cathode organic layer. these causes of degradations are common facts of a macromolecule and micromolecule. We think these degradation caused by the impact of heat and electro-chemical factor, bulk effect and interface phenomenon. and raise a question.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.424-425
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• 2006

Zinc sulfide is a well-known host material of phosphor emitting different radiations dependent on different doping impurities of metallic ion. It emits green, blue, orange-yellow or white colors by doping with activators such as copper, silver, manganese and so on. In this study, manganese, copper and chlorine doped ZnS phosphor (ZnS:Mn,Cu,Cl) was synthesized by solid-state reaction method. The optical properties were investigated according to different concentrations of sulfur and activators used during the synthesis process.

• 한국결정성장학회지
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• 제22권1호
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• pp.11-14
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• 2012

AlGaN는 3.4~6.2 eV까지 넓은 밴드갭을 가지는 직접천이형 반도체이다. 최근에 자외영역의 광소자가 다양하게 응용되면서 자외선 발광이 가능한 AlGaN 역시 주목받고 있다. 이를 위해서는 고품질의 AlGaN 층이 필요하지만 GaN 층위에 AlGaN 층을 성장하는 것은 이들의 격자상수와 열팽창계수 차이로 인해 어렵다. 본 논문에서, multi-sliding boat법이 적용된 혼합소스 HVPE법을 이용하여 GaN template 위에 LED 구조를 성장하였다. 활성층의 Al 조성을 조절함으로써 AlGaN의 격자상수 변화와 광학적 변화를 관찰하고자 하였다. 에피 성장을 위해 HCl과 $NH_3$ 가스를 혼합소스 표면으로 흘려주었고, 수송가스로는 $N_2$를 사용하였다. 소스영역과 성장영역의 온도는 각각 900과 $1090^{\circ}C$로 안정화하였다. 성장 후 샘플은 x-ray diffraction(XRD)과 electro luminescence(EL) 측정을 하였다.