• Title/Summary/Keyword: Electrical resistance change

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A Study on the Electrical Fire Risk of Terminal Block Due to Single and Composite Cause (단일 및 복합 원인에 의한 단자대 전기화재위험성에 관한 연구)

  • Kim, Si-Kuk;Gum, Dong-Shin;Lee, Chun-Ha
    • Fire Science and Engineering
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    • v.29 no.5
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    • pp.57-66
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    • 2015
  • This thesis is based on a research to investigate the electrical fire risk due to the single and composite cause in a terminal block. This paper analyzed the thermal characteristics depending on the screw torque change and contact resistance change to measure the fire risk due to the poor contact from single cause first. To measure the fire risk due to the composite cause, the acceleration tracking depending on the contact resistance change was experimented to check the correlation of poor contact and tracking to fire. The experiment result showed that the thermal characteristics were clearer as the screw torque in poor contact status and magnitude of contact resistance increased and that the thermal characteristics of terminal block depending on the contact resistance change was more reliable than the thermal characteristics depending on the screw torque change. Moreover, the terminal block poor contact and tracking were correlated in the case of the composite cause, and when two composite causes were interacted, the electrical fire risk was higher than the single cause.

Theoretical and experimental investigation of piezoresistivity of brass fiber reinforced concrete

  • Mugisha, Aurore;Teomete, Egemen
    • Computers and Concrete
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    • v.23 no.6
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    • pp.399-408
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    • 2019
  • Structural health monitoring is important for the safety of lives and asset management. In this study, numerical models were developed for the piezoresistive behavior of smart concrete based on finite element (FE) method. Finite element models were calibrated with experimental data collected from compression test. The compression test was performed on smart concrete cube specimens with 75 mm dimensions. Smart concrete was made of cement CEM II 42.5 R, silica fume, fine and coarse crushed limestone aggregates, brass fibers and plasticizer. During the compression test, electrical resistance change and compressive strain measurements were conducted simultaneously. Smart concrete had a strong linear relationship between strain and electrical resistance change due to its piezoresistive function. The piezoresistivity of the smart concrete was modeled by FE method. Twenty-noded solid brick elements were used to model the smart concrete specimens in the finite element platform of Ansys. The numerical results were determined for strain induced resistivity change. The electrical resistivity of simulated smart concrete decreased with applied strain, as found in experimental investigation. The numerical findings are in good agreement with the experimental results.

Hysteresis Behavior in Electric Resistance-hydrogen Concentration of Pd Thin Films (Pd 박막의 전기저항-수소농도 이력현상)

  • Lee, Eunsongyi;Lee, Jun Min;Jeon, Kye Jin;Lee, Wooyoung
    • Korean Journal of Metals and Materials
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    • v.47 no.6
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    • pp.372-377
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    • 2009
  • We report on hysteresis behavior in the electrical resistance-hydrogen concentration of Pd thin films. The variation of the electrical resistance has been investigated during the process of absorption and desorption of hydrogen gas ($H_{2}$) as a function of thickness of Pd thin films. The hysteresis behavior in the electrical resistance with $H_{2}$ concentration was found for Pd thin films and consists of $\alpha$ phase, ${\alpha}+{\beta}$ phase, and $\beta$ phase regions. The sensitivity of Pd thin films with $H_{2}$ concentration was found to follow Sieverts' law in the $\alpha$ phase region. However, the sensitivity was observed to increase abruptly with $H_{2}$ concentration in the ${\alpha}+{\beta}$ phase co-exist region. This is because Pd-H interaction is stronger in the $\beta$ phase than in the $\alpha$ phase and needs a higher concentration gradient as a driving force to desorb. The formation of the $\beta$ phase also was observed to cause the structural change because of the lattice expansion during absorption. The hysteresis height and the trace of structural change were affected by the thickness of the Pd film. As the film becomes thinner, the hysteresis height becomes lower and the amount of delamination on the surface becomes smaller. For films thinner than 20 nm in thickness, the delamination was not found but electrical resistance hysteresis was still observed.

A Study of Power Output Characteristics for the Magnesium Metal Fuel Cell (마그네슘 금속연료전지의 출력특성에 관한 연구)

  • Kim, Yong-Hyuk
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.63 no.3
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    • pp.212-217
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    • 2014
  • The electric power output characteristics of magnesium fuel cell were investigated with regard to internal resistance. A equivalent circuit with the series-connected three internal resistance was introduced to analyze of the response to change of power. The power output analysis was employed in order to investigate the effect of internal resistances for the electrolyte concentration, air electrode area, Mg electrode area and distance between the electrodes. It was confirmed that internal resistance is generated by the electrolyte, air electrode and metal electrode, then those Internal resistances had a significant effect on the power output decrease. The power output was a maximum when the load resistance maches the internal resistance of the magnesium fuel cell. The fuel efficiency was only 50% at maximum power output. Higher fuel efficiency was achieved when the load resistance is greater than the internal resistance.

Theoretical Model for the Electrical Resistance of Skin (피부의 전기적 저항에 대한 이론적 모델)

  • Oh, Seaung-Youl
    • Journal of Pharmaceutical Investigation
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    • v.26 no.3
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    • pp.207-213
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    • 1996
  • The kinetic change of electrical resistance of hairless mouse skin as a function of ionic strength of the bathing medium was determined from impedance measurements. After increasing (decreasing) the ionic strength of the bathing medium, resistance decreased (increased) continuously with time, finally reaching an equilibrium value. We have modelled this process, using nonsteady-state diffusion kinetics. The results show semi-quantitative correlation between theoretically derived and experimentally obtained values. Overall, this work provides further mechanistic insight into ion-conduction through the skin.

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Electrical Properties of Cu/Mn Alloy Resistor with Low Resistance and Thermal Stability (낮은 저항과 열안정성을 가지는 Cu/Mn 합금저항의 전기적 특성)

  • Kim, Eun Min;Kim, Sung Chul;Lee, Sunwoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.6
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    • pp.365-369
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    • 2016
  • In this paper, we fabricated Cu/Mn alloy shunt resistor with low resistance and thermal stability for use of mobile electronic devices. We designed metal alloy composed of copper (Cu) and manganese (Mn) to embody in low resistance and low TCR which are conflict each other. Cu allows high electrical conductivity and Mn serves thermal stability in this Cu/Mn alloy system. We confirmed the elemental composition of the designed metal alloy system by using energy dispersive X-ray (EDX) analysis. We obtained low resistance below $10m{\Omega}$ and low temperature coefficient of resistance (TCR) below $100ppm/^{\circ}C$ from the designed Cu/Mn alloy resistor. And in order to minimize resistance change caused by alternative frequency on circuit, shape design of the metal alloy wire is performed by rolling process. Finally, we conclude that design of the metal alloy system was successfully done by alloying Cu and 3 wt% of Mn, and the Cu/Mn alloy resistor has low resistance and thermal stability.

Electrical Characteristic of Ni-Cr-Al-Cu Alloy Thin Film Resistors (Ni-Cr-Al-Cu계 박막저항의 전기적 특성)

  • 이붕주;차성익;김철수;한정인;김종택;이덕출
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.4
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    • pp.328-335
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    • 2001
  • In this work, we made the precision thin film resistors of NiCr alloy (74wt%Ni-f18wt%Cr-4wt%Al-4wt%Cu) using DC/RF magnetron sputtering method and studied the sheet resistance and TCR(Temperature Coefficient of Resistance) etc... of the Ni-Cr-Al-Cu alloy thin film according to the change by annealing treatment to 400$\^{C}$ in air and nitrogen atmosphere and the change(power, pressure, substrate temperature) of sputtering process.

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Analysis of the Bounce Phenomenon According to the Load of the Relay Contact (릴레이 접점의 부하에 따른 바운스 현상 분석)

  • Choi, Sun-Ho;Kim, Kwan-Sik;Ryu, Jae-Man;Huh, Chang-Su
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.2
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    • pp.115-119
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    • 2015
  • The power relay can be easily controlled with high voltage and current through the contacts. For this reason, has become widely used range in a variety of applications. In this study, we measured the contact resistance between the bouncing phenomenon of contact due to the change of load. The results of the experiment, the contact resistance increases with the deterioration of the contact, it is possible to predict the life of the relay contacts through the contact resistance. And relay bounce duration time have occurred in 3.5 ms or less. In addition, it is possible to use the results to design an arc suppression circuit device.

Consideration on $H_2S$ Sensing Mechanism of CuO-$SnO_2$ Thick Film through the Analysis of the Temperature-Electrical Resistance Characteristics (온도-전기저항 특성 해석을 통한 CuO-$SnO_2$ 후막 소자의 $H_2S$ 감지기구 고찰)

  • 유도준;준타마키;박수잔;노보류야마조에
    • Journal of the Korean Ceramic Society
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    • v.33 no.4
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    • pp.379-384
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    • 1996
  • The H2S sensing mechanism of CuO-SnO2 was confirmed by analyzing the electrical-resistance variation with temperature under an H2S atmosphere. While the resistance of CuO-SnO2 thick film at N2+H2S atmosphere was almost invariant with change in temperature it increased with increasing temperature for air +H2S atmos-phere. This behavior was analyzed using an equation derived from a basic assumption based on the H2S sensing mechanism proposed before. the experimental results are sufficiently explained with the equation derived which showed that the H2S sensing mechanism was reasonable. The equation also gave a detailed analysis and physical meaning to the behavior of the resistance variation with change in H2S concentration.

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A Study on the Development of Chalcogenide-based ReRAM{Resistance RAM) Device with Holographic Lithography Method (Holographic Lithography 방법을 적용한 Chalcogenide-based ReRAM(Resistance RAM) 소자의 개발에 관한 연구)

  • Nam, Ki-Hyun;Chung, Hong-Bay
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.12
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    • pp.1014-1017
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    • 2009
  • In this study, we studied the nature of thin films formed by holographic photodoping chalcogenide thin films with for use in programmable metallization cell devices(PMC), a type of ReRAM. We formatted straight conduction pathway from the internal interferences of the diffraction gratings which is builded by the holographic lithography method. We investigated the resistance change of solid-electrolyte chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. The switching characteristics of the devices applied holographic lithography method was more improved than ultraviolet exposure condition. As a result of improved resistance change effects, we can analogize that the diffraction gratings is a kind of pattern for straight conduction pathway formation inside the chalcogenide thin films.