• Journal of Electrical Engineering and Technology
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• v.11 no.5
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• pp.1362-1366
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• 2016

• Journal of Electrical Engineering and Technology
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• v.11 no.5
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• pp.1057-1062
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• 2016

• Journal of Electrical Engineering and Technology
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• v.11 no.5
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• pp.1070-1076
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• 2016

• Proceedings of the KIEE Conference
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• 1995.07a
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• pp.128-130
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• 1995

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.489-490
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.106-106
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• 2011

Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1674-1681
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• 2015

This paper presented an improved analytical method for calculating armature-reaction field in the surface-mounted permanent magnet machines accounting for opening slots. The analytical model is divided into two types of subdomains. The current of the armature is centralized in the center of the slots. The field solution of each subdomain is obtained by applying the interface and boundary conditions of the model. Two 30-pole/36-slot prototype machines with different slot-opening width are used for validation. The FE (finite element) results confirm the validity of the analytical results with the proposed model. The investigation shows that the wider the slot-opening width is, the smaller the peak value of radial and circumferential components of flux density, and the analytical armature-reaction field produced by centralized current in the slots is similar with the armature-reaction field produced by distributed current in the slots in the FE.

• Journal of Electrical Engineering and Technology
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• v.3 no.3
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• pp.385-390
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• 2008

For taking account of the two-dimensional magnetic properties of a grain-oriented electrical steel sheet, the effective anisotropic tensor reluctivity is examined, and a computationally efficient algorithm is suggested by using the response surface method to model the two-dimensional magnetic properties. It is shown that the reconstructed two-dimensional magnetic properties are fairly effective to stabilize the convergence characteristics of the Newton-Raphson iteration in the nonlinear magnetic field analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.290-293
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• 1997

In this paper, volume resistivity is studied so that the electrical properties for transformer oil due to the stirring temperature of BTA is investigated. A measurement of volume resistivity using the VMG-1000 highmegohm meter is recorded after 10 minutes when the each voltage, and DC 100[V], 250[V], 500[V] and 1000[V] is applied, according to the step voltage appliaction method. A coaxial cylindrical liquid electrode to measure volume resistivity of specimen is used, and its geometric capacitance is 16[pF].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.187-191
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• 2002

The characteristics of Electrical breakdown liquid nitrogen($LN_2$) were studied under simulated Quenching conditions for application of HTS apparatus. The experimental results for various quench condition revealed that the breakdown voltage of $LN_2$ with bubble flow velocity and gap spacing, Also, it did a electric field and potential distribution interpreting at the liquid nitrogen when the bubble existed, The plots of equipotential lines for three cases are also shown.