• Title/Summary/Keyword: Electrical engineering

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The Study on Development of NDT gauge with real time monitoring system (실시간 모니터링 가능한 비파괴 검사기 개발에 관한 연구)

  • Jung, Seong-Woo;Kim, Mu-Hyun;Hong, Sung-Won;Chae, Min-Ku;Jun, Hyung-Joo;Hong, Sang-Su;Hwang, Hee-Seung;Kim, Bitnara;Kim, Yeo-Jin;Lee, Hye-Hyun;Cha, Hye-Kyung;Jun, Ji-Eun;Lee, Ji-Sang;Park, Gwan-Soo
    • Proceedings of the KIEE Conference
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    • 2007.10c
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    • pp.253-255
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    • 2007
  • 비파괴검사방식 중 자기누설 탐상법(Magnetic Flux Leakage, MFL)은 선박의 표면이나 인간의 손이 닿지 않는 곳의 부식상태를 파악하기에 적합한 방법이다. 실시간 모니터링 가능한 자기누설 탐상 시스템은 빠르고 정확한 검사가 요구되는 대형 선박의 교면 검사에서 유용하게 사용될 것으로 예상된다. 본 논문에서는 스파이더형의 소형 비파괴 검사기를 실시간 모니터링이 가능하도록 제작하였다.

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Liquid Crystal Alignment Effects on Nitrogen-doped Diamond like Carbon Layer by Ion Beam Alignment Method

  • Han, Jeong-Min;Choi, Sung-Ho;Kim, Byoung-Yong;Han, Jin-Woo;Kim, Jong-Hwan;Kim, Young-Hwan;Hwang, Jeoung-Yeon;Lee, Sang-Keuk;Ok, Chul-Ho;Seo, Dae-Shik
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.1
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    • pp.46-50
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    • 2007
  • We have studied the nematic liquid crystal (NLC) alignment effects on a nitrogen-doped diamond-like carbon (NDLC) thin film layer with ion beam irradiation. The pretilt angle for NLC on the NDLC surface with ion beam exposure was observed below 1 degree. Also, we had the good LC alignment characteristics on the NDLC thin films with ion beam exposure of 1800 eV. In thermal stability experiments, the alignment defect of the NLC on the NDLC surface with ion beam irradiation above annealing temperature of $250^{\circ}C$ can be observed. Therefore, the good thermal stability and LC alignment for NLC by ion beam aligned NDLC thin films can be achieved.

Dual Address Electrodes for Fast Addressing Method of ac-PDP with High Xe% Working Gas

  • Lee, D.K.;Choi, J.H.;Choi, W.S.;Ok, J.W.;Kwon, B.S.;Lee, H.J.;Lee, H.J.;Kim, D.H.;Park, C.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.247-250
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    • 2005
  • In this paper, new address electrode having separated dual electrodes is suggested to reduce addressing time in ac PDP. It had been found that both the formative and jitter width of the suggested electrode are improved by $10{\sim}20$ % compared with the conventional one on IMID 04'. So we experiment other several kinds of the separated electrodes, and the change in discharge characteristics is analyzed by using a two-dimensional fluid simulation. The key feature of the suggested structure is that the distribution of Xe and Ne ion is controllable during the address periods without significant increases in the capacitive load of the address electrodes.

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Characteristic of Facing Discharge Front plate Address Electrode Structure in AC PDP

  • Cho, Hyun-Min;Kim, Dong-Hwan;Song, In-Cheol;Kim, Yun-Gi;Ok, Jung-Woo;Kim, Dong-Hyun;Lee, Hae-June;Lee, Ho-Jun;Park, Chung-Hoo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.104-107
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    • 2009
  • In order to improve discharge characteristics in AC PDP, we suggest FDFA (Facing Discharge Front plate Address Electrode) structure. By adopting both long facing discharge electrodes and address electrodes in front plate, the FDFA structure make it possible to gain a high luminance, low power consumption, and a high luminous efficiency.

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Physics-Based SPICE Model of a-InGaZnO Thin-Film Transistor Using Verilog-A

  • Jeon, Yong-Woo;Hur, In-Seok;Kim, Yong-Sik;Bae, Min-Kyung;Jung, Hyun-Kwang;Kong, Dong-Sik;Kim, Woo-Joon;Kim, Jae-Hyeong;Jang, Jae-Man;Kim, Dong-Myong;Kim, Dae-Hwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.3
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    • pp.153-161
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    • 2011
  • In this work, we report the physics-based SPICE model of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) and demonstrate the SPICE simulation of amorphous InGaZnO (a-IGZO) TFT inverter by using Verilog-A. As key physical parameter, subgap density-of-states (DOS) is extracted and used for calculating the electric potential, carrier density, and mobility along the depth direction of active thin-film. It is confirmed that the proposed DOS-based SPICE model can successfully reproduce the voltage transfer characteristic of a-IGZO inverter as well as the measured I-V characteristics of a-IGZO TFTs within the average error of 6% at $V_{DD}$=20 V.

Electrical characteristic of ZnO, GaN nanowire network (ZnO, GaN 나노선 네트워크의 전기적 특성 연구)

  • Ahn, Seung-Eon;Kang, Byung-Hyun;Kim, Kang-Hyun;Chang, Yu-Jin;Pieh, Sung-Hoon;Kim, Nam-Hee;Lee, Jong-Su;Kim, Sang-Sig;Kim, Gyu-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.67-70
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    • 2003
  • 합성된 GaN, ZnO 나노선 네트워크를 이용하여 전류-전압 특성을 조사하고 정류성 특징을 가지는 나노선네트워크에 대해서는 다이오드의 이상지수를 측정하여 기존의 다이오드의 특성과 비교 분석하고 간단한 광 특성 측정을 하여 광전소자로서의 가능성도 확인해 보았다.

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