• 제목/요약/키워드: Electrical engineering

검색결과 42,388건 처리시간 0.059초

High voltage MOSFET fabricated by using a standard CMOS logic process to drive the top emission OLEDs in silicon-based OELDs

  • Lee, Cheon-An;Kwon, Hyuck-In;Jin, Sung-Hun;Lee, Chang-Ju;Lee, Myung-Won;Kyung, Jae-Woo;Cho, Il-Whan;Lee, Jong-Duk;Park, Byung-Gook
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.981-983
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    • 2003
  • Using the conventional standard CMOS logic process, the high voltage MOSFET to drive top emission OLEDs was fabricated for the silicon-based organic electroluminescent display. The drift region of the conventional high voltage MOSFET was implemented by the n-well of the logic process. The measurement result shows a good saturation characteristic up to 50 V without breakdown phenomena.

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Effect of Hydrogen Radicals for Ion Implanted CVD Diamond Using Remote Hydrogen Plasma Treatment(RHPT)

  • Won, Jaihyung;Hatta, Akimitsu;Yagi, Hiromasa;Wang, Chunlei;Jiang, Nan;Jeon, Hyeongmin;Deguehi, Masahiro;Kitabatake, Makoto;Ito, Toshimichi;Sasaki, Takatomo;Hiraki, Akio
    • The Korean Journal of Ceramics
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    • 제4권1호
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    • pp.15-19
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    • 1998
  • Defects formation of Chemical Vapor Deposition (CVD) diamond on $^4He^{2+}$ irradiation and after remote hydrogen plasma treatment(RHPT) were investigated by cathodoluminescence(CL). As calculated in the TRIM simulation, the light elements of $^4He^{2-}$ can be penetrated into the diamond bulk structure at 3~4 $\mu\textrm{m}$ depth. The effects of the implantation region were observed when 5 keV~20 keV electron energy (insight 0.3~4.0$\mu\textrm{m}$) of CL measurement was irradiated to diamond at temperature 80 K. After the RHPT, rehybridization of irradiation damaged diamond was studied. The intensity of 5RL center(intrinsic defect of C) was diminished. The 2.16 eV center (N-V center) occurring usually by annealing could not be seen after RHPT. The diamond was rehybridized by hydrogen radicals without etching and thermal degradation by the RHPT.

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Partial Discharge Characteristics in LLDPE-Natural Rubber Blends: Correlating Electrical Quantities with Surface Degradation

  • Aulia, Aulia;Ahmad, Mohd Hafizi;Abdul-Malek, Zulkurnain;Arief, Yanuar Z.;Lau, KwanYiew;Novizon, Novizon
    • Journal of Electrical Engineering and Technology
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    • 제11권3호
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    • pp.699-706
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    • 2016
  • Partial discharges (PD) lead to the degradation of high voltage cables and accessories. PD activities occur due to the existence of impurities, voids, contaminants, defects and protrusions during the manufacture and installation of power cables. Commonly, insulation failures occur at cable joints and terminations, caused by inhomogeneous electric field distributions. In this work, a blend of natural rubber (NR) and linear low density polyethylene (LLDPE) was investigated, and the optimal formulation of the blend that could resist PD was discussed. The experiments were conducted under a constant high voltage stress test of 6.5 kV AC and the magnitude of partial discharge activities was recorded using the CIGRE method II. Pattern analysis of PD signals was performed along with the interpretation of morphological changes. The results showed that the addition of 10 wt% of NR and 5 wt% of Alumina Trihydrate (ATH) provided promising results in resisting PD activities. However, as the NR content increased, more micropores existed, thus resulting in increased PD activities within the samples.

Characterization of Density-of-States in Polymer-based Organic Thin Film Transistors and Implementation into TCAD Simulator

  • Kim, Jaehyeong;Jang, Jaeman;Bae, Minkyung;Lee, Jaewook;Kim, Woojoon;Hur, Inseok;Jeong, Hyun Kwang;Kim, Dong Myong;Kim, Dae Hwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권1호
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    • pp.43-47
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    • 2013
  • In this work, we report extraction of the density-of-states (DOS) in polymer-based organic thin film transistors through the multi-frequency C-V spectroscopy. Extracted DOS is implemented into a TCAD simulator and obtained a consistent output curves with non-linear characteristics considering the contact resistance effect. We employed a Schottky contact model for the source and drain to fully reproduce a strong nonlinearity with proper physical mechanisms in the output characteristics even under a very small drain biases. For experimental verification of the model and extracted DOS, 2 different OTFTs (P3HT and PQT-12) are employed. By controlling the Schottky contact model parameters in the TCAD simulator, we accurately reproduced the nonlinearity in the output characteristics of OTFT.

Effect of Cross-bar Length on Luminous Efficacy in AC-PDP with Fence Electrode Stricture

  • Nam, Hyung-Woo;Choi, Yong-Suk;Bae, Hyo-Won;Kim, Yun-Gi;Ok, Jung-Woo;Kim, Dong-Hyun;Lee, Ho-Jun;Lee, Hae-June;Park, Chung-Hoo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.721-724
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    • 2009
  • In this paper, we proposed fence electrode structures. The experimental structures change cross-bar length as 145, 105, 65 and $30{\mu}m$ to improve the electro-optical characteristics. The proposed structures improve the addressing time and luminous efficacy compared with the T145 structure which has the cross-bar length of $145{\mu}m$ as the reference. Especially, in the case of the T30 structure with cross-bar length of $30{\mu}m$, it gains lower power consumption by 34%, and higher luminous efficacy by 20% than those of the reference structure.

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Study of AC-PDP's Discharge Characteristics with Variation time and Temperature in High Xe contents

  • Kim, Hyun-Gyu;Lee, Ho-Jun;Kim, Dong-Hyun;Park, Chung-Hoo;Cho, Sung-Yong;Ha, Chang-Seung;Wi, Sung-Suk;Sim, Choung-Hwan;Lee, Hae-June
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.732-735
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    • 2009
  • In this paper, high Xe(Ne+Xe 10%, 20%, 30%) AC-PDP's discharge characteristics according to aging time were studied. The static margin, Vt close curve, discharge time lag was measured for experiments. According to increase of Xe partial pressure, the static margin and luminance was increased. As the result of analysis for misfiring probability, the misfiring is frequently occurred in accordance with increasing of aging time. To improve misfiring, we proposed 3Reset waveform and achieved misfiring probability which was improved.

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자성물질을 이용한 나선형 인덕터의 고주파 특성 분석 (Characterization and Analysis of Integrated RF Ferromagnetic Spiral Inductors)

  • 차승용;김경범;정영채;최윤석;조근휘;이재성;황성우;현응경;이성래
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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    • pp.109-111
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    • 2006
  • This paper presents characterization and analysis of integrated ferromagnetic inductors in RF regime. Two different materials (CoFe/NiFe) are used as ferromagnetic material. Systematic studies of the inductance (L), the Q-factor (Q) and the structure of the inductor have been performed.

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Core Material Design of a High Performance Rotating Machine Considering Magnetic Anisotropy

  • Ikariga Atsushi;Enokizono Masato;Shimoji Hiroyasu;Yamashiro Hirofumi
    • KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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    • 제5B권3호
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    • pp.248-252
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    • 2005
  • This paper deals with a new design method for a small-size rotating machine with high power. In order to achieve high performance, secondary excitation by Nd-Fe-B magnets and the grain oriented electrical steel sheets were selected and a new design using dual rotors is proposed. The outline of the high-performance rotating machine will be presented and the results of the finite element analysis by using this method combined with the E&SS modeling will be shown in the paper.