• Title/Summary/Keyword: Electrical contact resistivity

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Fabrication and Characteristics of High Efficiency Silicon PERL (passivated emitter and rear locally-diffused cell) Solar Cells (PERL (passivated emitter and rear locally-diffused cell) 방식을 이용한 고효율 Si 태양전지의 제작 및 특성)

  • Kwon, Oh-Joon;Jeoung, Hun;Nam, Ki-Hong;Kim, Yeung-Woo;Bae, Seung-Chun;Park, Sung-Keoun;Kwon, Sung-Yeol;Kim, Woo-Hyun;Kim, Ki-Wan
    • Journal of Sensor Science and Technology
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    • v.8 no.3
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    • pp.283-290
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    • 1999
  • The $n^+/p/p^+$ junction PERL solar cell of $0.1{\sim}2{\Omega}{\cdot}cm$ (100) p type silicon wafer was fabricated through the following steps; that is, wafer cutting, inverted pyramidally textured surfaces etching by KOH, phosphorus and boron diffusion, anti-reflection coating, grid formation and contact annealing. At this time, the optical characteristics of device surface and the efficiency of doping concentration for resistivity were investigated. And diffusion depth and doping concentration for n+ doping were simulated by silvaco program. Then their results were compared with measured results. Under the illumination of AM (air mass)1.5, $100\;mW/cm^2$ $I_{sc}$, $V_{oc}$, fill factor and the conversion efficiency were 43mA, 0.6 V, 0.62. and 16% respectively.

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Hydrogenated In-doped ZnO Thin Films for the New Anode Material of Organic Light Emitting Devices: Synthesis and Application Test

  • Park, Young-Ran;Nam, Eun-Kyoung;Boo, Jin-Hyo;Jung, Dong-Geun;Suh, Su-Jeong;Kim, Young-Sung
    • Bulletin of the Korean Chemical Society
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    • v.28 no.12
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    • pp.2396-2400
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    • 2007
  • Transparent In-doped (1 at.%) zinc oxide (IZO) thin films are deposited by pulsed DC magnetron sputtering with H2 mixed Ar atmosphere on glass substrate without any heating process. Even at room temperature, highly c-axis oriented IZO thin films were grown in perpendicular to the substrate. The hydrogenated IZO (IZO:H) film isolated in H2 atmosphere for 30 min exhibited an average optical transmittance higher than 85% and low electrical resistivity of less than 2.7 × 10?3 Ω·cm. These values are comparable with those of commercially available ITO. Each of the IZO films was used as an anode contact to fabricate organic light-emitting diodes (OLEDs) and the device performances studied. At the current density of 1 × 103 A/m2, the OLEDs with IZO:H (H2) anode show excellent efficiency (11 V drive voltage) and a good brightness (8000 cd/m2) of the light emitted from the devices, which are as good as the control device built on a commercial ITO anode.

Technology of Flexible Transparent Conductive Electrode for Flexible Electronic Devices (유연전자소자를 위한 차세대 유연 투명전극의 개발 동향)

  • Kim, Joo-Hyun;Chon, Min-Woo;Choa, Sung-Hoon
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.2
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    • pp.1-11
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    • 2014
  • Flexible transparent conductive electrodes (TCEs) have recently attracted a great deal of attention owing to rapid advances in flexible electronic devices, such as flexible displays, flexible photovoltanics, and e-papers. As the performance and reliability of flexible electronics are critically affected by the quality of TCE films, it is imperative to develop TCE films with low resistivity and high transparency as well as high flexibility. Indium tin oxide (ITO) has been the most dominant transparent conducting material due to its high optical transparency and electrical conductivity. However, ITO is susceptible to cracking and delamination when it is bent or deformed. Therefore, various types of flexible TCEs, such as carbon nanotube, conducting polymers, graphene, metal mesh, Ag nanowires (NWs), and metal mesh have been extensively investigated. Among several options to replace ITO film, Ag NWs and metal mesh have been suggested as the promising candidate for flexible TCEs. In this paper, we focused on Ag NWs and metal mesh, and summarized the current development status of Ag NWs and metal mesh. The several critical issues such as high contact resistance and haze are discussed, and newly developed technologies to resolve these issues are also presented. In particular, the flexibility and durability of Ag NWs and metal mesh was compared with ITO electrode.

Brush-painted Ti-doped In2O3 Transparent Conducting Electrodes Using Nano-particle Solution for Printable Organic Solar Cells

  • Jeong, Jin-A;Kim, Han-Gi
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.458.2-458.2
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    • 2014
  • We have demonstrated that simple brush-painted Ti-doped $In_2O_3$(TIO) films can be used as a cost effective transparent anodes for organic solar cells (OSCs). We examined the RTA effects on the electrical, optical, and structural properties of the brush painted TIO electrodes. By the direct brushing of TIO nanoparticle ink and rapid thermal annealing (RTA), we can simply obtain TIO electrodes with a low sheet resistance of 28.25 Ohm/square and a high optical transmittance of 85.48% under atmospheric ambient conditions. Furthermore, improvements in the connectivity of the TIO nano-particles in the top region during the RTA process play an important role in reducing the resistivity of the brush-painted TIO anode. In particular, the brush painted TIO films showed a much higher mobility ($33.4cm^2/V-s$) than that of previously reported solution-process transparent oxide films ($1{\sim}5cm^2/V-s$) due to the effects of the Ti dopant with higher Lewis acid strength (3.06) and the reduced contact resistance of TIO nanoparticles. The OSCs fabricated on the brush-painted TIO films exhibited cell-performance with an open circuit voltage (Voc) of 0.61 V, shot circuit current (Jsc) of $7.90mA/cm^2$, fill factor (FF) of 61%, and power conversion efficiency (PCE) of 2.94%. This indicates that brush-painted TIO film is a promising cost-effective transparent electrode for printing-based OSCs with its simple process and high performance.

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Effect of the particle size on the electrical contact in selective electro-deposition of copper (구리의 선택적 전착에서 결정 입자의 크기가 전기적 접촉성에 미치는 영향)

  • Hwang, Kyu-Ho;Lee, Kyung-Il;Joo, Seung-Ki;Kang, Tak
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.1 no.2
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    • pp.79-93
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    • 1991
  • With the advent of ULSI, many problems in previous metallization techniques and interconnection materials have become more serious. In this work, selective deposition of copper to fill the submicron contact has been tried. After forming electro-deposited copper films on p-type (100) silicon wafer using 0.75M $CuSO_4{\cdot}$5H_2O$ as an electrolyte, the effect of deposition time, current density and concentration of an additive on film properties were investigated. Film thickness, particle size and resistivity were analyzed by Alpha Step, SEM and 4 - point probe measurement respectively. The deposition rate was about $0.5-0.6\mu\textrm{m}$/min at $2A/dm^2$ and the particle size increased with increasing current density. The resistivities of electro-deposited copper films were about $3-6{\mu}{\Omega}{\cdot}$cm for the particle size above $4000{\AA}$. By the addition of 0.2 g/l gelatin, the particle size was reduced to less than $0.1{\mu}m $ and selective plugging of copper on submicron contacts could be successfully achieved.

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Effects of CdCl2 Heat Treatment on the Qualities of CdS Thin Films Deposited by RF Magnetron Sputtering Technique (RF 마그네트론 스퍼터링법으로 증착된 CdS 박막의 CdCl2 열처리 효과)

  • Choi, Su-Young;Chun, Seung-Ju;Jung, Young-Hun;Lee, Seung-Hun;Bae, Soo-Hyun;Tark, Sung-Ju;Kim, Ji-Hyun;Kim, Dong-Hwan
    • Korean Journal of Materials Research
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    • v.21 no.9
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    • pp.497-501
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    • 2011
  • The CdS thin film used as a window layer in the CdTe thin film solar cell transports photo-generated electrons to the front contact and forms a p-n junction with the CdTe layer. This is why the electrical, optical, and surface properties of the CdS thin film influence the efficiency of the CdTe thin film solar cell. When CdTe thin film solar cells are fabricated, a heat treatment is done to improve the qualities of the CdS thin films. Of the many types of heat treatments, the $CdCl_2$ heat treatment is most widely used because the grain size in CdS thin films increases and interdiffusion between the CdS and the CdTe layer is prevented by the heat treatment. To investigate the changes in the electrical, optical, and surface properties and the crystallinity of the CdS thin films due to heat treatment, CdS thin films were deposited on FTO/glass substrates by the rf magnetron sputtering technique, and then a $CdCl_2$ heat treatment was carried out. After the $CdCl_2$ heat treatment, the clustershaped grains in the CdS thin film increased in size and their boundaries became faint. XRD results show that the crystallinity improved and the crystalline size increased from 15 to 42 nm. The resistivity of the CdS single layer decreased from 3.87 to 0.26 ${\Omega}cm$, and the transmittance in the visible region increased from 64% to 74%.

Fabrication and Characterization of Transparent Conductive Film based on Bacterial Cellulose (Bacterial cellulose를 기반으로 하는 투명전도성막의 제조 및 특성평가)

  • Yim, Eun-Chae;Kim, Seong-Jun;Kee, Chang-Doo
    • Korean Chemical Engineering Research
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    • v.51 no.6
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    • pp.766-773
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    • 2013
  • A transparent film was fabricated based on bacterial cellulose (BC), BC has excellent physical strength and stability at high temperature and it is an environmental friendly flexible material. In order to improve the conductivity, silver nanowire (AgNW) and/or graphene were introduced to the BC membrane. The aspect ratio of the AgNW synthesized in this study was 214, with a length of $15{\mu}m$ and width of 70 nm. The higher aspect ratio improved the conductivity by reducing the contact resistance. The thermal and electrical properties of 7 types of films prepared were investigated. Each film was fabricated with rectangular shape ($2mm{\times}2mm{\times}50{\mu}m$). The films were scored with a net shape by a knife, and filled with AgNW and graphene to bestow conductivity. The film filled with AgNW showed favorable electrical characteristics with a thickness of $350{\mu}m$, electron concentration of $1.53{\times}10^{19}$, electron mobility of $6.63{\times}10^5$, and resistivity of 0.28. The film filled with graphene had a thickness of $360{\mu}m$, electron concentration of $7.74{\times}10^{17}$, electron mobility of 0.17, and resistivity of 4.78. The transmittances at 550 nm were 98.1% and 80.9%, respectively. All the films were able to light LEDs bulbs although their brightness differed. A thermal stability test of the BC and PET films at $150{\pm}5^{\circ}C$ showed that the BC film was more stable, whereas the PET film was quickly banded. From these results, it was confirmed that there it is possible to fabricate new transparent conductivity films based on BC.

Properties of ZnO:Ga Transparent Conducting Film Fabricated on O2 Plasma-Treated Polyethylene Naphthalate Substrate (산소플라즈마 전처리된 Polyethylene Naphthalate 기판 위에 증착된 ZnO:Ga 투명전도막의 특성)

  • Kim, Byeong-Guk;Kim, Jeong-Yeon;Oh, Byoung-Jin;Lim, Dong-Gun;Park, Jae-Hwan;Woo, Duck-Hyun;Kweon, Soon-Yong
    • Korean Journal of Materials Research
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    • v.20 no.4
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    • pp.175-180
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    • 2010
  • Transparent conducting oxide (TCO) films are widely used for optoelectronic applications. Among TCO materials, zinc oxide (ZnO) has been studied extensively for its high optical transmission and electrical conduction. In this study, the effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films (GZO) on polyethylene naphthalate (PEN) substrate were studied. The $O_2$ plasma pretreatment process was used instead of conventional oxide buffer layers. The $O_2$ plasma treatment process has several merits compared with the oxide buffer layer treatment, especially on a mass production scale. In this process, an additional sputtering system for oxide composition is not needed and the plasma treatment process is easily adopted as an in-line process. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PEN substrate and the GZO film, the $O_2$ plasma pre-treatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the contact angle decreased and the RMS surface roughness increased significantly. It is believed that the surface energy and adhesive force of the polymer surfaces increased with the $O_2$ plasma treatment and that the crystallinity and grain size of the GZO films increased. When the RF power was 100W and the treatment time was 120 sec in the $O_2$ plasma pretreatment process, the resistivity of the GZO films on the PEN substrate was $1.05\;{\times}\;10^{-3}{\Omega}-cm$, which is an appropriate range for most optoelectronic applications.

Robust 1D inversion of large towed geo-electric array datasets used for hydrogeological studies (수리지질학 연구에 이용되는 대규모 끄는 방식 전기비저항 배열 자료의 1 차원 강력한 역산)

  • Allen, David;Merrick, Noel
    • Geophysics and Geophysical Exploration
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    • v.10 no.1
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    • pp.50-59
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    • 2007
  • The advent of towed geo-electrical array surveying on water and land has resulted in datasets of magnitude approaching that of airborne electromagnetic surveying and most suited to 1D inversion. Robustness and complete automation is essential if processing and reliable interpretation of such data is to be viable. Sharp boundaries such as river beds and the top of saline aquifers must be resolved so use of smoothness constraints must be minimised. Suitable inversion algorithms must intelligently handle low signal-to-noise ratio data if conductive basement, that attenuates signal, is not to be misrepresented. A noise-level aware inversion algorithm that operates with one elastic thickness layer per electrode configuration has been coded. The noise-level aware inversion identifies if conductive basement has attenuated signal levels so that they are below noise level, and models conductive basement where appropriate. Layers in the initial models are distributed to span the effective depths of each of the geo-electric array quadrupoles. The algorithm works optimally on data collected using geo-electric arrays with an approximately exponential distribution of quadrupole effective depths. Inversion of data from arrays with linear electrodes, used to reduce contact resistance, and capacitive-line antennae is plausible. This paper demonstrates the effectiveness of the algorithm using theoretical examples and an example from a salt interception scheme on the Murray River, Australia.

Film Properties of MOCVD TiN prepared by TDMAT and TDMAT/$NH_3$ (TDMAT와 TDMAT/$NH_3$ 로 형성한 MOCVD(Metal Organic Chemical Vapor Deposition) Titanium Nitride 박막의 특성)

  • Baek, Su-Hyeon;Kim, Jang-Su;Park, Sang-Uk;Won, Seok-Jun;Jang, Yeong-Hak;O, Jae-Eung;Lee, Hyeon-Deok;Lee, Sang-In;Choe, Jin-Seok
    • Korean Journal of Materials Research
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    • v.5 no.7
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    • pp.775-780
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    • 1995
  • Thin films of titanium nitride are formed using the tetrakis-dimethyl-amino-titanium (TDMAT(Ti[N($CH_3$)$_2$]$_4$)) under various conditions. The formation of TiN films has been obtained from the thermal decomposition of the Ti-precursor and the gas phase reaction between TDMAT and ammonia(NH$_3$). The resistivity of the MOCVD film can be attributed to their impurity. Especially the curve fitting graph of XPS data is revealed that main impurities in the films as carbon and oxygen make various interstitial compounds which has influenced physical and electrical properties of the film. In the contact hole with the aspect ratio of 3:1 and the diameter of 0.5${\mu}{\textrm}{m}$, the SEM morphology shows that the step coverage is more decreased in the films formed y flowing ammonia additionally than the films formed by pyrolysis of TDMAT and the phenomenon is probably related with the activation energy.

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