• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.109-109
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• 2006

Screen printing (SP) metal contact is typically applied to the solar cells for mass production. However, SP metal contact has low aspect ratio, low accuracy, hard control of the substrate penetration and unclean process. On the other hand, photo lithograpy (PL) metal contact can reduce defects by metal contact. In this investigation, PL metal contact was obtained the multi-layer structure of Ti/Pd/Ag by e-beam process. We applied SP metal contact and PL metal contact to single crystalline silicon solar cells, and demonstrated the difference of conversion efficiency. Because PL metal contact silicon solar cell has Jsc (short circuit current density) better than silicon solar cell applied SP metal contact.

• Journal of Electrical Engineering and Technology
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• 제10권3호
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• pp.1349-1355
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• 2015

It is difficult to calculate the magnetic force of an object of magnetic material in contact with other objects using the existing methods, such as Maxwell stress tensor method, magnetic charge method, or magnetizing current method. These methods are applicable for force computation only when the object is surrounded by air. The virtual air-gap concept has been proposed for calculating the contact force. However, its application is limited to magneto-static system. In this paper, we present the virtual air-gap concept for contact surface force in the eddy-current system. Its validity and usefulness are shown by comparison between numerical and experimental examples.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.208-209
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• 2008

Ni/Ti/Al multilayer system was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Compared with conventional process using Ni, Ni/Ti/Al contact shows perfect ohmic behavior, and possesses much lower contact resistance of about $2.5\times10^{-4}\Omega{\cdot}cm^2$ after $930^{\circ}C$ RTA, which is about 2 orders of magnitude smaller than that of Ni contact. Contact resistance gradually increased as the RTA temperature was lowered in the range of 840 ~ $930^{\circ}C$, and about $3.4\times10^{-4}\Omega{\cdot}cm^2$ was obtained at the lowest RTA temperature of $840^{\circ}C$. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.221-221
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• 2009

This paper is focused on understanding the interrupting capability, more specifically of the fix contact, based on the shape of the contact system in the current MCCB. The magnetic driving force was calculated by using the flux densities induced by the arc current, which are obtained by three-dimensional finite element method. There is a need to assure that the optimum design required to analyze the electromagnetic forces of the contact system generated by current and the flux density be present. This is paper present our computational analysis on contact system in MCCB.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.272-272
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• 2009

Screen-printing metal contact is typically applied to the solar cells for mass production. And metal paste is used widely for rear contact formation of silicon solar cells. However, Screen-printing solar cell metal paste contact has low aspect ratio, low accuracy, high resistivity, hard control of unclean process. In this paper is to develop resistivity of rear contact for silicon solar cells applications. 4-point prove result, This resistivity of rear contact by Al evaporation was measured about $3.56{\times}10^6{\Omega}{\cdot}cm$ less than screen printed solar cell about $52.6{\times}10^6{\Omega}{\cdot}cm$.

• 한국전기전자재료학회논문지
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• 제24권5호
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• pp.345-350
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• 2011

This paper was carried about optimization for high efficiency of point contact solar cell. We have studied on the characteristics of power converter according to each parameter for the optimization for high efficiency of point contact solar cell on this study. We have 25.1352% of convert efficiency after adapt optimal parameters as mentioned in point body and superior conclusion is drawn by comparison with general efficiency has within 20%. At this time, the value of parameter is 100 um cell pitch, 0.01 um AR coating, 0.9 um N+ FSF thickness., etc. This study will continue to go on for optimization for efficiency in future, as it looks now, the results of this study would contribute to the business of high efficiency of point contact solar cell.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.123-129
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• 2001

The optimal high temperature processing conditions for the formation of Ohmic contact of Ti/Al/Pt/Au multiple layers were established for the fabrication of n$^{+}$-GaN/AlGaN/GaN HFET device. Contact resistivity as low as 3.4x10$^{-6}$ ohm-$\textrm{cm}^2$ was achieved by the annealing of the sample at 100$0^{\circ}C$ for 10 sec. using the RTA (Rapid Thermal Annealing) system. The fabricated HFET (Heterostructure Field Effect Transistor) with a structure of n'-GaN/undoped AlGaN/undoped GaN exhibited a low knee voltage of 3.5 V and a maximum source-drain current density of 180 mA/mm at Vg=0V.V.

• 한국전기전자재료학회논문지
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• 제22권3호
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• pp.218-221
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• 2009

This paper reports on measurement method for the fiber optic strain monitoring of overhead contact line systems of trains, We used FBG (Fiber Bragg Grating) sensors to measure the strain variation of overhead contact line. FBG sensors can sensitively measure the variation of strain and! or temperature by the shift wavelength of reflected wave according to the lattice variation during the measurement. FBG sensor were attached on the contact line and connected to the monitoring system with optical fibers. The monitering system with FBG sensors showed very good sensitivity to measuring strain variation and this system could be applied to the overhead contact line of KTX (Korea Train eXpress).

• 한국전기전자재료학회논문지
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• 제17권7호
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• pp.764-769
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• 2004

In order to reduce operating voltage of the GaN based blue-violet laser diodes, the effect of highly Mg doped GaN layer, which was grown below ohmic contact metals, on contact resistivity as well as operating voltage has been investigated. The addition of the highly Mg doped GaN layer greatly reduced contact resistivity of Pd/Pt/Au ohmic contacts from $5.2 \times {10}^-2 \Omegaㆍ$\textrm{cm}^2$ to 7.5 \times {10}^-4 \Omegaㆍ$\textrm{cm}^2$$. In addition, it also decreased device voltage at 20 mA by more than 3 V. Temperature- dependent sheet resistivity of the highly Mg doped GaN layer suggested that the reduction of the contact resistivity could be attributed to predominant current flow at the interface between the Pd/Pt/Au contacts and p-GaN through a deep level defect band, rather than the valence band.

• 한국전기전자재료학회논문지
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• 제20권11호
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• pp.1004-1008
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• 2007

The ice coats are built on 25 kV overhead contact wire when the temperature is lower than $0^{\circ}C$. It generates shockwaves at the mechanical interface of the collecting strips of the pantograph and the contact wire. The de-icing processes should be performed to avoid shockwaves which are generated by a pulsed high-voltage arc discharge. This paper presents temperature analysis of the de-icing effects which could be applied to the overhead contact wire of railways using Joule heat. The results show that 350 A is the proper current for $0^{\circ}C$ conductor according to environmental condition such as velocity of air stream, ambient temperature and moisture.