• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.1018-1021
• /
• 2001

1018-1021 The CuO-P$_2$O$_{5}$ containing P$_2$O$_{5}$ as glass-former were prepared by press-quenching method on the copper plate. By post-heat treatment of these glasses, the CuO-P$_2$O$_{5}$ -V$_2$O$_{5}$ -g1ass ceramics was obtained and the crystallization behavior and dc conductivities were investigovted. The heat-treated glass-ceramics decreased in electrical conductivity by the order of 10$^1$ compared to amorphous glass. The linear relationship between In($\sigma$T) and T$^{-1}$ indicated that electrical conduction in CuO-P$_2$O$_{5}$ -V$_2$O$_{5}$ -gass occurred by a small polaron hopping.

• 한국진공학회지
• /
• 제8권3A호
• /
• pp.187-193
• /
• 1999

In this study, PVDF thin films which show the excellent piezoelectricity and pyroelectricity, are prepared by PVD (physical vapor deposition) method, and thir electrical conduction phenomena for analyses of the electrical conduction mechanism and TSC (Thermally Stimulated Current) for identification of the behavior of conductive carriers are investigated. As a result of FT-IR(Fourier Transform Infrared Spectroscopy) spectra, the crystalline phase transforms $\alpha$ type into $\beta$ type with increasing electric field. From XRD (X-Ray diffraction) analyses patterns, the degree of crystallinity increases from 49.8% to 67%, as the substrate temperature increases from $30^{\circ}C$ to $80^{\circ}C$. As a result of electrical conduction phenomena, the electrical conduction mechanism of PVDF thin films is identified as ionic conduction mechanism. From TSC analyses, there are three peaks as P1, P2, P3 with increasing temperature, and with increasing substrate temperature, the peak temperature of TSC increases and the peak intensity of TSC decreases.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
• /
• pp.35-38
• /
• 1995

Indium Tin Oxide(ITO) thin film is transparent to visible ray and conductive in electricity. It is seen that the samples made by the sputtering process have high transmission rate to visible ray and high adhesion , but the planar type magnetron sputtering process with is very well known in industrial region have a defect of partial erosion on the surface of target and a high loss of target and also since the substrate is positioned in plasma, the damage on thin film surface is caused by the reaction with plasma. In cylindrical magnetron sputtering system. it is known that the loss of target is little , the damage of thin film is very little and the adhesion of thin film with substrate is strong. In this study, we have made ITO thin film in the cylindrical DC magnetron system with the variable of substrate temperature , magnetic field, vacuum condution and the applied voltage. The general temperature for formation on ITO is asked at 350 $^{\circ}C$~400$^{\circ}C$ but we have made ITO is low temperature(80-150$^{\circ}C$) By studing electrical and optical properties of ITO thin fims made by varing several condition, we have searched the optimal condition for formation in the best ITO in low temperature.