• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.691-696
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• 2004

The electronic state and chemical bonding of $\beta$-MnO$_2$ with transition metal dopants were theoretically investigated by DV-X$_{\alpha}$ (the discrete variational X$_{\alpha}$) method, which is a sort of the first principles molecular orbital method using the Hartree-Fock-Slater approximation. The calculations were performed with a $_Mn_{14}$ MO$_{56}$ )$^{-52}$ (M = transition metals) cluster model. The electron energy level, the density of states (DOS), the overlap population, the charge density distribution, and the net charges, were calculated. The energy level diagram of MnO$_2$ shows the different band structure and electron occupancy between the up spin states and down spin states. The dopant levels decrease between the conduction band and the valence band with the increase of the atomic number of dopants. The covalency of chemical bonding was shown to increase and ionicity decreased in increasing the atomic number of dopants. Calculated results were discussed on the basis of the interaction between transition metal 3d and oxygen 2p orbital. In conclusion it is expected that when the transition metals are added to MnO$_2$ the band gap decreases and the electronic conductivity increases with the increase of the atomic number of dopants. the atomic number of dopants.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.193-196
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• 2001

Single phase CuInS$_2$ thin film with the highest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second highest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$ was well made with chalcopyrite structure at substrate temperature of 70 $^{\circ}C$, annealing temperature of 25$0^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 ${\mu}{\textrm}{m}$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that CuInS$_2$ thin film was 5.60 $\AA$ and 11.12 $\AA$ respectively. Single phase CuInS$_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type CuInS$_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of CuInS$_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type CuInS$_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, 3.0x10 $^4$ $cm^{-1}$ / and 1.48 eV respectively. When CuAn composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film was 821 nm, 6.0x10$^4$ $cm^{-1}$ / and 1.51 eV respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.835-843
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• 2008

We have fabricated the source-drain electrodes for OTFTs by screen printing method and manufactured Ag pastes as conductive paste. To obtain excellent conductivity and screen-printability of Ag pastes, the dispersion characteristics of Ag pastes prepared from two types of acryl resins with different molecular structures and Ag powder treated with caprylic acid, triethanol amine and dodecane thiol as surfactant respectively were investigated. The Ag pastes containing Ag powder treated with dodecane thiol having thiol as anchor group or AA4123 with carboxyl group(COOH) of hydrophilic group as binder resin exhibited excellent dispersity. But, Ag pastes(CA-41, TA-41, DT-41) prepared from AA4123 fabricated the insulating layer since the strong interaction between surface of Ag powder and carboxyl group(COOH) of AA4123 interfered with the formation of conduction path among Ag powders. The viscosity behavior of Ag pastes exhibited shear-thinning flow in the high shear rate range and the pastes with bad dispersion characteristic demonstrated higher shear-thinning index than those with good dispersity due to the weak flocculated network structure. The output curve of OTFT device with a channel length of 107 ${\mu}m$ using screen-printed S-D electrodes from DT-30 showed good saturation behavior and no significant contact resistance. And this device exhibited a saturation mobility of $4.0{\times}10^{-3}$ $cm^2/Vs$, on/off current ratio of about $10^5$ and a threshold voltage of about 0.7 V.

• Journal of Power Electronics
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• v.3 no.4
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• pp.249-258
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• 2003

This paper presents a high-efficient and cost effective three-phase AC/DC-DC/AC power conversion system with a single two-switch type active Auxiliary Resonant DC Link (ARDCL) snubber circuit, which can minimize the total power dissipation. The active ARDCL snubber circuit is proposed in this paper and its unique features are described. Its operation principle in steady-state is discussed for the three phase AC/DC-DC/AC converter, which is composed of PWM rectifier as power factor correction (PFC) converter, sinewave PWM inverter. In the presented power converter system not only three-phase AC/DC PWM rectifier but also three-phase DC/AC inverter can achieve the stable ZVS commutation for all the power semiconductor devices. It is proved that the proposed three-phase AC/DC-DC/AC converter system is more effective and acceptable than the previous from the cost viewpoint and high efficient consideration. In addition, the proposed two-switch type active auxiliary ARDCL snubber circuit can reduce the peak value of the resonant inductor injection current in order to maximize total system actual efficiency by using the improved DSP based control scheme. Moreover the proposed active auxiliary two-switch ARDCL snubber circuit has the merit so that there is no need to use any sensing devices to detect the voltage and current in the ARDCL sunbber circuit for realizing soft-switching operation. This three-phase AC/DC-DC/AC converter system developed for UPS can achieve the 1.8% higher efficiency and 20dB lower conduction noise than those of the conventional three-phase hard-switching PWM AC/DC-DC/AC converter system. It is proved that actual efficiency of the proposed three-phase AC/DC-DC/AC converter system operating under a condition of soft switching is 88.7% under 10kw output power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.167-168
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• 2007

$CdIn_2S_4$ (110) films were grown on semi-insulating GaAs (100) by a hot wall epitaxy method. Using photocurrent (PC) measurement, the PC spectra in the temperature range of 30 and 10 K appeared as three peaks in the short wavelength region. It was found that three peaks, A-, B-, and C-excitons, correspond to the intrinsic transition from the valence band states of ${\Gamma}_4(z),\;{\Gamma}_5(x),\;and\;{\Gamma}_5(y)$ to the exciton below the conduction band state of ${\Gamma}_1(s)$, respectively. The 0.122 eV crystal field splitting and the 0.017 eV spin orbit splitting were obtained. Thus, the temperature dependence of the optical band gap obtained from the PC measurement was well described by $E_g$(T)=2.7116eV - $(7.65{\times}10^{-4}\;eV/K)T^2$/(425+T). But, the behavior of the PC was different from that generally observed in other semiconductors. The PC intensities decreased with decreasing temperature. This phenomenon had ever been reported at a PC experiment on the bulk crystals grown by the Bridgman method. From the relation of log $J_{ph}$ vs 1/T, where $J_{ph}$ is the PC density, two dominant levels were observed, one at high temperatures and the other at low temperatures. Consequently, the trapping centers due to native defects in the $CdIn_2S_4$ film were suggested to be the causes of the decrease in the PC signal with decreasing temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.379-380
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• 2005

Single phase $CuInS_2$ thin film with a highest diffraction peak (112) at a diffraction angle ($2\Theta$) of $27.7^{\circ}$ was well made by SEL method at annealing temperature of $250^{\circ}C$ and annealing hour of 60 min in vacuum of $10^{-3}$ Torr or in S ambience for an hour. And the peak of diffraction intensity at miller index (112) of $CuInS_2$ thin film annealed in S ambience was shown a little higher about 11 % than in only vacuum. Single phase $CuInS_2$ thin films were appeared from 0.85 to 1.26 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated in S ambience were all over 50 atom%. Also when $CuInS_2$ composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). The largest lattice constant of a and grain size of $CuInS_2$ thin film in S ambience was 5.63 ${\AA}$ and 1.2 ${\mu}m$ respectively. And the films in S ambience were all p-conduction type with resistivities of around $10^{-1}{\Omega}cm$.

• Journal of Welding and Joining
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• v.25 no.4
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• pp.28-34
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• 2007

The heating unit of direct heating method manufactured as the plasma spray coating of $TiO_2/NiCr$ conductive heating material on the surface of heating unit in order to improve the disadvantages of indirect heating method. $TiO_2$ and NiCr (80wt.%Ni-20wt.%Cr) that had the properties of conduction and heating was chosen for the conductive heating material. The compositions of the composite powders were studied $TiO_2-30wt.%NiCr\;and\;TiO_2-10wt.%NiCr$. As the heating temperature was increased, the hardness of heating layer was increased because of the fine microstructure and the decrease of porosity. The adhesion strength was decreased for coarsening and connection of voids in the insulation layer, and the electrical resistivity of heating layer was increased for fine crack formation and growth. In this study, the best efficient sprayed coatings with heating unit was concluded as the plasma sprayed $TiO_2-10wt.%NiCr$ coatings that was heat treated at $300^{\circ}C$.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.73-73
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• 2009

In this sutdy, a new class ACA(Anisotropic Conductive Adhesive) with low-melting-point alloy(LMPA) and self-organized interconnection method were developed. This developed self-organized interconnection method are achieved by the flow, melting, coalescence and wetting characteristics of the LMPA fillers in ACA. In order to observe self-interconnection characteristic, the QFP($14{\times}14{\times}2.7mm$ size and 1mm lead pitch) was used. Thermal characteristic of the ACA and temperature-dependant viscosity characteristics of the polymer were observed by differential scanning calorimetry(DSC) and torsional parallel rheometer, respectively. A electrical and mechanical characteristics of QFP bonding were measured using multimeter and pull tester, respectively. Wetting and coalescence characteristics of LMPA filler particles and morphology of conduction path were observed by microfocus X-ray inspection systems and cross-sectional optical microscope. As a result, the developed self-organized interconnection method has a good electrical characteristic($2.41m{\Omega}$) and bonding strength(17.19N) by metallurgical interconnection of molten solder particles in ACA.

• Journal of the Korean Society of Safety
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• v.38 no.4
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• pp.8-14
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• 2023

This study presents the characteristics of short circuits (SCs) caused by excessive currents in high-voltage cables used in electric vehicles and emphasizes the need to calculate the cross-sectional areas of these cables according to the SC current. Three direct current power supplies were connected in parallel to test the SC characteristics caused by excessive currents, and a timer and a magnetic contactor were used to deliver the conduction time and SC current. A circular infrared-radiation heater was used to test the temperature-dependent SC characteristics, a thermocouple was used to measure the temperature, and a shunt resistor was used to measure the current. As the SC current increased, the fusing time of the cable decreased. Additionally, a high-voltage cable (with an area of 16 mm² ) used in electric vehicles fused when a current (approximately equal to 55 times the allowable current) flowed for 0.2 s (operating time of the protective device). When the SC current is 10 kA, the cable may fuse during the operating time of the protective device, thus creating a fire hazard. In electric vehicles, the size of the SC current increases in proportion to the capacity of the battery. Thus, the cross-sectional areas of the cables used should be calculated accordingly, and cable operations should be properly coordinated with the surrounding protective devices.

• Membrane Journal
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• v.33 no.5
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• pp.248-256
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• 2023

Indium tin oxide (ITO) transparent electrode film has been widely adopted for the various applications such as display and electric vehicle. In this paper, we studied how to enhance the thermoforming stability of ITO film by applying the highly conductive Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin layer. Based on the change of sheet resistance value, the influence of the additional solvent with different boiling point was investigated for the PEDOT:PSS coating solution. In addition, by analyzing optical transmittance and Raman spectrum, we confirmed the key mechanism which determine the final electrical conductivity of the PEDOT:PSS on ITO film using an ethylene glycol solvent. The final ITO transparent electrode coated with PEDOT:PSS performed the outstanding endurance of electrical conduction even in 126% stretching condition.