• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.6
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• pp.155-166
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• 2016

It is important to configure capacitance(C) of the capacitor and the induction coefficient(L) of the work coil on the resonant circuit design stage in order to induce heating on the object by a precise and constant frequency components in the electromagnetic induction heating equipment. Work coil conducts a direct induction heating according to heating point and area of the object which has a fixed heat factor so that work coil is designed to has fixed value. On the other hands, Capacitor should be designed to be changed in order to be the higher the utilization of the entire equipment. It is extracted the samples by variation of single electrode capacity from the selection stage of raw materials for capacity to the stage of process design for output of the high frequency LC resonance of 700kHz on 1000 VAC maximum voltage and current to $200I_{MAX}$. It is suggested fundamental experiment results in order to prove relation for the optimal design of HF-LC resonance conduction-cooled capacitor based on the response of frequency characteristics and results of output parameters according to variation of the capacitance size.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.8
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• pp.14-18
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• 2018

Generally. the Ohmic's law is an important factor to increase the conductivity in a micro device. So it is also known that the Ohmic contact in a semiconductor device is import. The PN junction as a structure of semiconductor involves the depletion layer, and this depletion layer induces the non linear electrical properties and also makes the Schottky contact as an intrinsic characteristics of semiconductor. To research the conduction effect of insulators in the semiconductor device, $SiO_2$ thin film and $V_2O_5/SiO_2$ thin film were researched by using the current-voltage system. In the nano electro-magnetic system, the $SiO_2$ thin film as a insulator had the non linear Schottky contact, and the as deposited $V_2O_5$ thin film had the linear Ohmic contact owing to the $SiO_2$ thin film with superior insulator's properties, which decreases the leakage current. In the positive voltage, the capacitance of $SiO_2$ thin film was very low, but that of $V_2O_5$ thin film increased with increasing the voltage. In the normal electric field system, it was confirmed that the conductivity of $V_2O_5$ thin film was increased by the effect of $SiO_2$ thin film. It was confirmed that the Schottky contact of semiconductors enhanced the performance of electrical properties to increased the conductivity.

• Journal of the Korean Chemical Society
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• v.37 no.11
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• pp.923-928
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• 1993

The series of solid solutions in the $Sr_{1+x}Ho_{1-x}FeO_{4-y}$ (x = 0.00, 0.25, 0.50, 0.75 and 1.00) systems with $K_2NiF_4$ type structure have been prepared at 1550$^{\circ}$C under an atmospheric air pressure. The X-ray powder diffraction spectra of these samples assign that the crystallographic phases are tetragonal system over the whole x range. The lattice volume was increased with increasing the substitution amount of the $Sr^{2+}$ ion. The mole ratio of the $Fe^{4+}$ ion to total iron ions or ${\tau}$ value has been determined by Mohr salt titration of the sample and then the y value was calculated from x and ${\tau}$ values. The ${\tau}$ and y values have been increased with x values. The nonstoichiometric chemical formula are formulated from the general formula of $Sr_{1+x}Ho_{1-x}Fe^3_{1-}\;^+_{\tau}Fe_{\tau}^{4+}O_{4-y}$ replaced by x,${\tau}$ and y values. Mossbauer spectra show the mixed valence state and coordination state of $Fe^{3+}\;and\;Fe^{4+}$ ions. It is found out that the magnetic property of the samples is paramagnetic at room temperature. Electrical conductivity varied within the semiconductivity range of 1.0 to 1 ${\times}\;10^{-9}{\Omega}^{-1}cm^{-1}$. Activation energy of the electrical conductivity was decreased with the $\tau$ value. The conduction mechanism should be explained by the hopping model of the conduction electrons between the valence states of $Fe^{3+}\;and\;Fe^{4+}$ ions.

• Korean Journal of Materials Research
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• v.8 no.11
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• pp.1055-1060
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• 1998

Thermoelectric properties of ($Pb_{1-x}Sn_x$)Te ($0\leq{x}\leq{0.4}$) alloys, fabricated by mechanical alloying and hot pressing, were investigated with variation of the SnTe content. For the hot-pressed PbTe and ($Pb_{0.9}Sn_{0.1}$)Te. transition from p-type to n-type occurred at $200^{\circ}C$ and $300^{\circ}C$, respectively. However, the specimens containing SnTe more than 0.2mole exhibited p-type conduction up to 450'C. In extrinsic conduction region, the Seebeck coefficient and electrical resistivity of the hot-pressed ($Pb_{1-x}Sn_x$)Te decreased with increasing the SnTe content. The temperature at which the hot-pressed (Pbl-,Sn,)Te exhibited a maximum figure-of-merit was shifted to higher temperature with increasing the SnTe content The hot-pressed (Pbo ,Sno dTe exhibited a maximum figure-of-merit of $0.68\times10_{-3}/K$ at $200^{\circ}C$.

• Journal of the Korean Chemical Society
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• v.36 no.4
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• pp.511-516
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• 1992

The x-values of the nonstoichiometric compound YbO$_x$ have been measured in a temperature range of 600 to 1150$^{\circ}C$ under oxygen partial pressure of 1.00 ${\times}$ 10$^{-2}$ atm∼atmospheric air pressure. The values are varied between 1.55453 and 1.60794 in the conditions. The enthalpy of the formation for x' in YbO$_{1.5＋x'}$(${\Delta}$H$_f$) was 1.55, 1.18, and 1.05 kJ/mol under the above conditions, respectively. The electrical conductivities of the oxides or ${\sigma}$ have been measured in the temperature range from 600 to 1100$^{\circ}C$ under oxygen partial pressure of 1.00 ${\times}$ 10$^{-5}$ ∼ 2.00 ${\times}$ 10$^{-1}$ atm. They varied from 10$^{-9}$ to 10$^{-5}$ ohm$^{-1}$ cm$^{-1}$ within the semiconductor range. The Arrhenius plots of the electrical conductivities show a linearity and the activation energy for the conduction was about 1.7eV. The oxygen partial pressure dependence of the conductivity or 1/n value increases with the pressure. The nonstoichiometric conduction mechanism of the oxide was discussed in terms of the x values, ${\sigma}$ values, and the thermodynamic data.

• Journal of the Korean Chemical Society
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• v.35 no.4
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• pp.329-334
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• 1991

The x values and electrical conductivity of the nonstoichiometric compound NbO$_x$ have been measured in a temperature range 700$^{\circ}C$ to 1100$^{\circ}C$ under oxygen partial pressure of 2 ${\times}$ 10$^{-1}$ ∼ 1 ${\times}$ 10$^{-5}$ atm. The NbO$_x$ is a stoichiometrical compound of Nb$_2$O$_5$ under oxygen partial pressure higher than 1.0 ${\times}$ 10$^{-2}$ atm at the above temperature range. The x values were found to vary between 2.48491 and 2.49900 in a temperature range 700$^{\circ}C$ to 1100$^{\circ}C$ under oxygen partial pressure lower than 1 ${\times}$ 10$^{-3}$ atm. The enthalpy of the formation for x' in NbO$_{2.50000-x'}$(${\Delta}H_f$) increased of 15.98 to 17.26 kcal/mol under the conditions. The electrical conductivity (${\sigma}$) of the oxide varied from 10$_4$ to 10$_1$ ohm$_1$cm$_1$ in the above conditions. The activation energy for the conduction was about 1.7 eV. The oxygen pressure dependency of the conductivity (or 1/n value) was about -1/4. The nonstoichiometric conduction mechanism of the oxide has been discussed with the x' values, the ${\sigma}$ values, and the thermodynamic data.

• Journal of Korean Neurosurgical Society
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• v.30 no.7
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• pp.831-841
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• 2001

Objective : Somatosensory evoked potentials(SSEPs) have been used widely both experimentally and clinically to monitor the function of central nervous system and peripheral nervous system. Studies of SSEPs have reported the various recording techniques and patterns of SSEP. The previous SSEP studies used scalp recording electrodes, showed mean vector potentials which included relatively constant brainstem potentials(far-field potentials) and unstable thalamocortical pathway potentials(near-field potentials). Even in invasive SSEP recording methods, thalamocortical potentials were variable according to the kinds, depths, and distance of two electrodes. So they were regarded improper method for monitoring of upper level of brainstem. The present study was conducted to investigate the characteristics of somatosensory evoked field potentials(SSEFPs) of the cerebral cortex that evoked by hindlimb stimulation using ball electrode and the pathways of SSEFP by recording the potentials simultaneously in the cortex, VPL nucleus of thalamus, and nucleus gracilis. Methods : In the first experiment, a specially designed recording electrode was inserted into the cerebral cortex perpendicular to the cortical surface in order to recording the constant cortical field potentials and SSEFPs mapped from different areas of somatosensory cortex were analyzed. In the second experiment, SSEPs were recorded in the ipsilateral nucleus gracilis, the contralateral ventroposterolateral thalamic nucleus(VPL), and the cerebral cortex along the conduction pathway of somatosensory information. Results : In the first experiment, we could constantly obtain the SSEFPs in cerebral cortex following the transcutaneous electrical stimulation of the hind limb, and it revealed that the first large positive and following negative waves were largest at the 2mm posterior and 2mm lateral to the bregma in the contralateral somatosensory cortex. The second experiment showed that the SSEPs were conducted by way of posterior column somatosensory pathway and thalamocortical pathway and that specific patterns of the SSEPs were recorded from the nucleus gracilis, VPL, and cerebral cortex. Conclusion : The specially designed recording electrode was found to be very useful in recording the localized SSEFPs and the transcutaneous electrical stimulation using ball electrode was effective in evoking SSEPs. The characteristic shapes, latencies, and conduction velocities of each potentials are expected to be used the fundamental data for the future study of brain functions, including the hydrocephalus model, middle cerebral artery ischemia model, and so forth.

• Korean Membrane Journal
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• v.9 no.1
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• pp.34-42
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• 2007

A perovskite-type ($La_{0.6}Sr_{0.4}Ti_{0.2}Fe_{0.8}O_{3-{\delta}}$) dense ceramic membrane was prepared by polymerized complex method, using citric acid as a chelating agent and ethylene glycol as an organic stabilizer. Effect of Ti addition on lanthanum-strontium ferrite mixed conductor was investigated by evaluating the thermal expansion coefficient, the oxygen flux, the electrical conductivity, and the phase stability. The thermal expansion coefficient in air was $21.19\;{\times}\;10^{-6}/K$ at 473 to 1,223 K. At the oxygen partial pressure of 0.21 atm ($20%\;O_2$), the electrical conductivity increased with temperature and then decreased after 973 K. The decrement in electrical conductivity at high temperatures was explained by a loss of the lattice oxygen. The oxygen flux increased with temperature and was $0.17\;mL/cm^2{\cdot}min$ at 1,223 K. From the temperature-dependent oxygen flux data, the activation energy of oxygen ion conduction was calculated and was 80.5 kJ/mol at 1,073 to 1,223 K. Also, the Ti-added lanthanum-strontium ferrite mixed conductor was structurally and chemically stable after 450 hours long-term test at 1,173 K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.909-914
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• 2013

CIGS is one of thin film solar cell and has been studied so much, because of the possibility of low price and high efficiency. Until now, co-evaporation and sputtering were typical method to prepare CIGS absorption layer, and a few company commercialized solar cell by these method. However, non-vacuum process which has been studied for long time has not been progressed, though the merit of low price. Especially, aerosol deposition method has not been reported, because it is difficult to prepare a large quantity of various CIGS powder. In this study, CIGS powder was synthesized by mechanochemical method and CIGS absorption layer was deposited by aerosol deposition method. The thickness of the CIGS layer was controlled by the number of deposition and the surface roughness of it was affected by the amount of flow gas. And, also, I-V curve of it appeared metallic property in the case of 'as deposition'. After heat treatment in Se-rich atmosphere, the electrical property of it changed to a semiconductor. CdS and transparent conduction layer were formed by a typical method on it for solar cell. The efficiency of cell was appeared 0.19%. Though the efficiency was low because of the disharmony in the after-process, it was conformed that CIGS solar cell could be prepared by aerosol deposition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.5-16
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• 1991

It was grown Cubic $ZrO_2(10 mol% Y_2O_3)$ single crystals doped with 1 wt% rare earth metal oxides (RE=Ce, Pr, Nd, Eu, Er) by Skull method. It was investigated electrical properties on (111) plane of grown single crystals by Impedance Spectroscopy. It was potted relation between temperature and electrical conductivities and observed the transition at $약300-400^{\circ}$ It was obtained activation energy on the migration of oxygen vacancy between low temperature (before the transition) and high temperature (after the transition till ${\11}500^{\circ}$) and its difference can be seen the activation energy of the formation of oxygen vacancies by break up defect complexes. It was obtained the activation energy according as add yttria and rare earth metal oxides and discussed ionic conduction mechanism. Grown single crystals showed Ce: orange - red, Pr: golden - yellow, Nd: lilac, Eu: light pink, Er: pink due to dopant effect from the light absorption data in the visible range.