• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.352.1-352.1
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• 2014

Indium Tin Oxide (ITO) films are the most extensively studied and commonly used as ones of TCO films. The ITO films having a high electric conductivity and high transparency are easily fabricated on glass substrate at a substrate temperature over $250^{\circ}C$. However, glass substrates are somewhat heavy and brittle, whereas plastic substrates are lightweight, unbreakable, and so on. For these reasons, it has been recently suggested to use plastic substrates for flexible display application instead of glass. Many reaearchers have tried to produce high quality thin films at rood temperatures by using several methods. Therefore, amorphous ITO films excluding thermal process exhibit a decrease in electrical conductivity and optical transparency with time and a very poor chemical stability. However the amorphous Indium Gallium Zinc Oxide (IGZO) offers several advantages. For typical instance, unlike either crystalline or amorphous ITO, same and higher than a-IGZO resistivity is found when no reactive oxygen is added to the sputter chamber, this greatly simplifies the deposition. We reported on the characteristics of a-IGZO thin films were fabricated by RF-magnetron sputtering method on the PEN substrate at room temperature using 3inch sputtering targets different rate of Zn. The homogeneous and stable targets were prepared by calcine and sintering process. Furthermore, two types of IGZO TFT design, a- IGZO source/drain material in TFT and the other a- ITO source/drain material, have been fabricated for comparison with each other. The experimental results reveal that the a- IGZO source/drain electrode in IGZO TFT is shown to be superior TFT performances, compared with a- ITO source/drain electrode in IGZO TFT.

• Korean Chemical Engineering Research
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• v.54 no.4
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• pp.543-547
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• 2016

Bubble properties such as size (chord length) and rising velocity were investigated in a bubble column with electrolyte solutions, of which diameter was 0.152m and 2.5m in height, respectively. The size and rising velocity of bubbles were measured by using the dual electrical resistivity probe method. Effects of gas and liquid velocities and ionic strength of liquid phase on the size and rising velocity of bubbles were determined. The bubble size increased with increasing gas velocity but decreased with increasing liquid velocity or ionic strength of liquid phase. The rising velocity of bubbles increased with increasing gas velocity and decreased with increasing ionic strength of liquid phase, however, it showed a slight maximum value with varying liquid velocity. The size and rising velocity of bubbles were well correlated with operating variables.

• The Journal of Engineering Geology
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• v.16 no.3 s.49
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• pp.255-263
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• 2006

In an electrical tomographic survey using an inclined borehole with a pole-dipole array, we must consider several factors: a singular point associated with zero potential difference, a spatial discrepancy between electrode and nodal point in a model due to a inclined borehole, and a variation of geometric factors in connection with a irregular topography. Singular points which are represented by the normal distance from current source to the ground surface can be represented by serveral regions due to a irregular topography of ground surface. The method of element division can be applied to the region in which the borehole is curved, inclined or the distance between the electrodes is shorter than that of nodal points, because the coordinate of each electrode cannot be assigned directly to the nodal point if several electrodes are in an element. Test on a three-dimensional (3-D) synthetic model produces good images of conductive target and shoves stable convergence.

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.34-39
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• 2011

Screen printing method is a common way to fabricate the crystalline silicon solar cell with low-cost and high-efficiency. The screen printing metallization use silver paste and aluminum paste for front and rear contact, respectively. Especially the rear contact between aluminum and silicon is important to form the back surface filed (Al-BSF) after firing process. BSF plays an important role to reduces the surface recombination due to $p^+$ doping of back surface. However, Al electrode on back surface leads to bow occurring by differences in coefficient of thermal expansion of the aluminum and silicon. In this paper, we studied the properties of mono crystalline silicon solar cell for rear electrode with aluminum and aluminum-boron in order to characterize bow and BSF of each paste. The 156*156 $m^2$ p-type silicon wafers with $200{\mu}m$ thickness and 0.5-3 ${\Omega}\;cm$ resistivity were used after texturing, diffusion, and antireflection coating. The characteristics of solar cells was obtained by measuring vernier callipers, scanning electron microscope and light current-voltage. Solar cells with aluminum paste on the back surface were achieved with $V_{OC}$ = 0.618V, JSC = 35.49$mA/cm^2$, FF(Fill factor) = 78%, Efficiency = 17.13%.

• Journal of the Korean Magnetics Society
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• v.9 no.5
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• pp.239-244
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• 1999

Bi-doped lanthanum magnetics $(La_{0.67-x}Bi_xCa_{0.33}MnO_3(x\;=\;0,\; 0.04,\; 0.1,\; 0.2))$ samples have been prepared by standard ceramic process. The crystallinity and microstructures of the samples have been investigated by x-ray diffractometry and optical microscopy, respectively. The magnetic and magnetoresistive properties of the samples have been measured by vibrating sample magnetometery and van der Pauw method, respectively, at the temperatures ranging of 100 K~300 K with applied magnetic field of 0.4~0.5 T. Good crystallinity and high Curie temperature (275 K) have been obtained for the Bi-doped samples with small dosage (x = 0.04, 0.1) even they were sintered at 120$0^{\circ}C$, which is about 20$0^{\circ}C$ lower than normal sintering temperature of 140$0^{\circ}C$. The Bi-doped samples with the small dosage showed lower relative electrical resistivity and higher magneto-resistive ratio compared to the undoped sample in the most temperatures measured. The Bi-doped samples also exhibited large magnetoresisitve ratio (maximum of 15% for x = 0.1) at room temperature even under a weak magnetic field of 0.4 T.

• Polymer(Korea)
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• v.37 no.6
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• pp.722-729
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• 2013

In order to enhance the thermal conductivity of poly(dimethyl siloxane) (PDMS), boron nitride (BN) and carbon nanotubes (CNTs) were incorporated as the thermally conductive fillers. The amount of BN was increased from 0 to 100 phr (parts per hundred rubber) and the amount of CNTs was increased from 0 to 4 phr at a fixed amount of the boron nitride (100 phr). The thermal conductivity of the composites increased with an increasing concentration of BN, but the incorporation of CNTs had only a slight effect on the enhancement of thermal conductivity. Unexpectedly, the thermal degradation of the composites was accelerated by the addition of CNTs in 100 phr BN filled PDMS. Activation energy for thermal decomposition of the composites was calculated using the Horowitz-Metzger method. The curing behavior, electrical resistivity, and mechanical properties of PDMS filled with BN and CNTs were investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.5
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• pp.1213-1218
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• 2013

In this study, Ga-doped ZnO (GZO) thin films were fabricated on transparent sapphire substrate by RF magnetron sputtering method and then investigated the effect of various substrate temperature on the electrical, optical properties and characteristic of crystallization of the GZO thin films. The electrical property indicated that the lowest resistivity ($4.18{\times}10^{-4}{\Omega}cm$), the highest carrier concentration ($6.77{\times}10^{20}cm^{-3}$) and Hall mobility ($22cm^2/Vs$) were obtained in the GZO thin film fabricated at $300^{\circ}C$. And for this condition, the highest c-axis orientation and (002) diffraction peak which exhibits a FWHM of $0.34^{\circ}$ were obtained. From the results of AFM measurements, it is known that the highest crystallinity is observed at $300^{\circ}C$. The transmittance spectrum in the visible range was approximately 80 % regardless of substrate temperature. The optical band-gap showed the blue-shift as increasing the substrate temperature to $300^{\circ}C$, and they are all larger than the band gap of bulk ZnO (3.3 eV). It can be explained by the Burstein-Moss effect.

• Journal of Korean Tunnelling and Underground Space Association
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• v.18 no.3
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• pp.257-272
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• 2016

It is usually not an easy task to counter-measure on time and appropriately when confronting with troubles in mechanized tunnelling job-sites because of the limitation of available spaces to perform those actions with the existence of disk cutter, cutter head, chamber and other various apparatus in Tunnel Boring Machine (TBM). So, it is important to predict the ground condition ahead of a tunnel face during tunnel excavation. Efforts have been made to utilize geophysical methods such as elastic wave survey, electromagnetic wave survey, electrical resistivity survey, etc for predicting the ground condition ahead of the TBM tunnel face. Each prediction method among these geophysical methods has its own advantage and disadvantage. Therefore, it might be needed to apply several geophysical methods rather than just one to predict the ground condition ahead of the tunnel face in the complex and/or mixed grounds since those methods will compensate among others. The problem is that each prediction method will give us different answer on the predicted ground condition; how to combine different solutions into a most reasonable and representative predicted value might be important. Therefore, in this study, we proposed a methodology how to systematically combine each prediction method utilizing probabilistic analysis as well as analytic hierarchy process. The proposed methods is applied to a virtual job site to confirm the applicability of the model to predict the ground condition ahead of the tunnel face in the mechanized tunnelling.

• Journal of the Korean earth science society
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• v.28 no.1
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• pp.64-74
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• 2007

The marine seismic prospecting using a research vessel in the shallow sea near the coastal area has certain limits according to the water depth and survey environment. Also, for the electrical resistivity survey at seashore area, one may need a specially designed high-voltage source to penetrate the very conductive surface layer. Therefore, we have conducted a feasibility study on the application of magnetotelluric method (MT), a passive geophysical method, on investigating of shallow marine environment geology. Our study involves both theoretical modeling and field survey at the tidal flat area which represent the very shallow marine environment. We have applied the audio-frequency magnetotelluric (AMT) method to the intertidal deposits of Gunhung Bay, west coast of Korea, and analysed the field data both qualitatively and quantitatively to investigate the morphology and sedimentary stratigraphy of the tidal flat. The inversion of AMT data well reveals the upper sedimentary layer of Holocene intertidal sediments having a range of 13-20 m thickness and the erosional patterns at the unconformable contact boundary. However, the AMT inversion results tend to overestimate the depth of basement (30-50 m) when compared with the seismic section (27-33 m). Since MT responses are not significantly sensitive to the resistivity of middle layer or the depth of basement, the AMT inversion result for basement may have to be adjusted using the comparison with other geophysical information like seismic section or logging data if possible. But, the AMT method can be an effective alternative choice for investigating the seashore area to get important basic informations such as the depositional environment of the tidal flat, sea-water intrusion and the basement structure near the sea shore.