• Korean Journal of Materials Research
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• v.11 no.5
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• pp.367-371
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• 2001

In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.37-43
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• 2008

In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program/erase (P/E) speed, reliability of memory device on interface trap between Si substrate and tunneling oxide and bulk trap in nitride layer were investigated using charge pumping method which has advantage of simple and versatile technique. We analyzed different SANOS memory devices that were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SANOS cell transistors with larger capture cross section and interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. The data retention was deteriorated as increasing P/E cycling number but not coincides with interface trap increasing tendency. This result once again confirmed that interface trap independence on data retention. And the result on different program method shows that HCI program method more degraded by locally trapping. So, we know as a result of experiment that analysis the SANOS Flash memory characteristic using charge pumping method reflect the device performance related to interface and bulk trap.

• Journal of Bio-Environment Control
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• v.24 no.2
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• pp.51-56
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• 2015

The objective of this study was to evaluate the effect of silicate fertilizer on growth, physiology and abiotic stress tolerance of Chinese cabbage seedlings. Five silicate concentrations (8, 16, 32, 64, and 128mM) and control (non-treatment) were applied to Chinese cabbage seedlings twice a week. Three weeks after application of silicate treatment, seedlings were used for treating abiotic stresses and were assessed for growth and physiological characteristics. Growth parameters significantly increased in 8, 16, and 32mM treatments except 64 and 128mM. Total root surface area, total root length, and number of root tips increased in 8, 16 and 32mM treatments, but they decreased in treated seedlings with 64 and 128mM of silicate. The highest growth parameters and root morphology were observed in 8mM treatment. As for the effect on the seedling physiology, transpiration rates decreased while stomatal diffusive resistance increased to increasing silicate concentration. The application of silicate reduced the electrical conductivity, heating and chilling injury index at high and low temperatures. Silicate enhanced drought tolerance of Chinese seedlings by delaying the starting time of wilting point. The starting time of wilting point in the control was 3 days after discontinuation of irrigation, while in the 8, 64 and 128mM of silicate treatments were 4 days, and the 16 and 32mM treatments were 5 days. All plants were wilted after 5 days in control without irrigation whereas it showed in 8mM treatment after 6 days, in 16, 32, 64, 128mM treatments after 7 days.

• Journal of Soil and Groundwater Environment
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• v.14 no.4
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• pp.33-44
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• 2009

Water curtain of an underground LPG storage cavern is a facility to prevent leakage of high pressure gases, for which groundwater should flow freely towards the cavern and groundwater level also must be stably maintained. In this study, in order to evaluate qualities of seepage water and surrounding groundwater of an underground LPG storage cavern in Yeosu, 4 rounds of samplings, field measurements and laboratory analyses (February, May, August, October of 2007) were conducted. According to field measurements, pH was weak acidic to neutral but it gradually increased with time. Electrical conductivity (EC) of groundwater near a salt stack showed very high values between 10.47 and 38.50 mS/cm. Dissolved oxygen (DO) showed a very wide range of 0.20~8.74 mg/L and a mean of oxidation-reduction potential (ORP) was 159 mV, which indicated an oxidized condition. Levels of $Fe^{2+}$ and $Mn^{2+}$ were mostly less than 3 mg/L. All of seepage waters showed a Na-Cl type while only groundwater near the salt stack showed a Na-Cl type with a high total dissolved solid. The other groundwaters exhibited typical $Ca-HCO_3$ types. Levels of aerobic bacteria were mostly very high (573-39,520 CFU/mL). Based on the analyses of these hydrochemistry and biological characteristics, it is concluded that there are no particular problems in groundwater and seepage water, which not causing a trouble in the cavern operation. However, both for control of bio-clogging and for sustainable operation of the water curtain system, a regular hydrochemical and microbiological monitoring is required for the seepage water and surrounding groundwater.