• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.477-477
• /
• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Korean Journal of Materials Research
• /
• v.18 no.4
• /
• pp.169-174
• /
• 2008

The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.357-358
• /
• 2005

Compact power amplifier modules (PAM) for WCDMA/KPCS and GSM/WCDMA dual-band applications based on multilayer low temperature co-fired ceramic (LTCC) substrates are presented in this paper. The proposed modules are composed of an InGaP/GaAs HBT PAs on top of the LTCC substrates and passive components such as RF chokes and capacitors which are embedded in the substrates. The overall size of the modules is less than 6mm $\times$ 6mm $\times$ 0.8mm. The measured result shows that the PAM delivers a power of 28 dBm with a power added efficiency (PAE) of more than 30 % at KPCS band. The adjacent-channel power ratio (ACPR) at 1.25-MHz and 2.25-MHz offset is -44dBc/30kHz and -60dBc/30kHz, respectively, at 28-dBm output power. Also, the PAM for WCDMA band exhibits an output power of 27 dBm and 32-dB gain at 1.95 GHz with a 3.4-V supply. The adjacent-channel leakage ratio (ACLR) at 5-MHz and 10-MHz offset is -37.5dBc/3.84MHz and -48dBc/3.84MHz, respectively. The measured result of the GSM PAM shows an output power of 33.4 dBm and a power gain of 30.4 dB at 900MHz with a 3.5V supply. The corresponding power added efficiency (PAE) is more than 52.6 %.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.2
• /
• pp.165-173
• /
• 2019

Lithium anodes (13, 15, 17, and 20 wt% Li) were fabricated by mixing molten lithium and iron powder, which was used as a binder to hold the molten lithium, at about $500^{\circ}C$ (discharge temp.). In this study, the effect of applied pressure and lithium content on the discharge properties of a thermal battery's single cell was investigated. A single cell using a Li anode with a lithium content of less than 15 wt% presented reliable performance without any abrupt voltage drop resulting from molten lithium leakage under an applied pressure of less than $6kgf/cm^2$. Furthermore, it was confirmed that even when the solid electrolyte is thinner, the Li anode of the single cell normally discharges well without a deterioration in performance. The Li anode of the single cell presented a significantly improved open-circuit voltage of 2.06 V, compared to that of a Li-Si anode (1.93 V). The cut-off voltage and specific capacity were 1.83 V and $1,380As\;g^{-1}$ (Li anode), and 1.72 V and $1,364As\;g^{-1}$ (Li-Si anode). Additionally, the Li anode exhibited a stable and flat discharge curve until 1.83 V because of the absence of phase change phenomena of Li metal and a subsequent rapid voltage drop below 1.83 V due to the complete depletion of Li at the end state of discharge. On the other hand, the voltage of the Li-Si anode cell decreased in steps, $1.93V{\rightarrow}1.72V(Li_{13}Si_4{\rightarrow}Li_7Si_3){\rightarrow}1.65V(Li_7Si_3{\rightarrow}Li_{12}Si_7)$, according to the Li-Si phase changes during the discharge reaction. The energy density of the Li anode cell was $807.1Wh\;l^{-1}$, which was about 50% higher than that of the Li-Si cell ($522.2Wh\;l^{-1}$).

• Journal of Korean Society of Forest Science
• /
• v.112 no.4
• /
• pp.442-450
• /
• 2023

This study sought to determine the desiccation tolerance and storage behavior of Sarcandra glabra seeds to assist in the establishment of an ex-situ conservation strategy for the species. The basic germination characteristics of S. glabra seeds were investigated. Subsequently, the seeds were dried to various desiccation levels to allow for analysis of their germination characteristics and seed integrity. In addition, the seeds were subjected to germination tests after being stored for different durations. The initial seed moisture content following the removal of the fleshy fruit was 32.8%, and the fresh seeds maintained their seed viability even after a decrease in the seed moisture content to 4.8%, while the germination percentage was 81.0%. The germination percentage of the seeds decreased to 55.0% and 30.0% when they were desiccated to moisture contents of 2.3% and 2.2%, respectively. By contrast, when the stored seeds were desiccated, they maintained their seed viability and vigor at a moisture content of 18.6%; however, when the moisture content decreased below 5.0%, both the seed viability and vigor significantly declined and the germination percentage fell below 20.0%. Furthermore, analysis of the seed leachate revealed that the decrease in the seed viability and vigor was associated with both increased electrical conductivity and increased concentrations of inorganic compounds such as potassium and calcium. In conclusion, the findings of this study show S. glabra seeds to possess desiccation tolerance that falls somewhere between the recalcitrant and intermediate seed types, with the observed variations depending on the degree of deterioration.

• Horticultural Science & Technology
• /
• v.29 no.4
• /
• pp.311-316
• /
• 2011

This study aimed to determine the effect of EC (electrical conductivity) levels of nutrient solution in hydroponic culture on allyl-isothiocyanate (AITC) content within plant tissues, Vitamin C content and physiological responses in wasabi plant (Wasabia japonica M. 'Darma'). The 'Darma' was grown for 5 weeks with a deep flow technique (DFT) system controlled at 5 different EC levels, including 0.5, 1, 2, 3, and $5dS{\cdot}m^{-1}$. In result, the highest total content of AITC showed at EC level 5 and $3dS{\cdot}m^{-1}$ for 1 or 5- week, respectively. The total content of AITC increased about 1.2-1.4 times when the plants were grown in the EC levels between 0.5 and $2dS{\cdot}m^{-1}$, whereas the content decreased about 6 and 56 % in the EC level 3 and $5dS{\cdot}m^{-1}$, respectively. The content of AITC was relatively higher in petiole tissue, about 53 %, taken from 1 week-grown plants when the EC was controlled between 0.5 and $2dS{\cdot}m^{-1}$. Root tissue also had relatively higher content of AITC, about 45.1 %, when the EC was controlled at 3 and $5dS{\cdot}m^{-1}$. However, a 5-fold decrease in the AITC content was found in blade tissue and a 6.8-fold decrease in root when the EC was controlled at $5dS{\cdot}m^{-1}$ for 5 weeks. There was no significant difference in the vitamin C content in 1-week grown leaf tissues under the different EC level treatments; but, the content increased about 27% in 5-week grown plants at the EC level between 0.5 and $2dS{\cdot}m^{-1}$, compared to the 1 week-grown leaf tissue. Electrolyte leakage of leaf tissue taken from 3-week grown plant was 3-fold higher at the EC level $5dS{\cdot}m^{-1}$, compared to the EC level between 0.5 and $2dS{\cdot}m^{-1}$. Chlorophyll content, photosynthesis rate and transpiration rate were decreased when the EC was controlled at higher than $2dS{\cdot}m^{-1}$. Leaf water content, specific leaf area and growth were decreased when the EC was controlled at $5dS{\cdot}m^{-1}$ for 5 weeks. All the integrated results in this study suggest that the EC level of nutrient solution should be maintained at lower than $3dS{\cdot}m^{-1}$ in order to improve nutritional value and quantity required for hydroponically grown wasabi as functional vegetable.

• Korean Journal of Materials Research
• /
• v.10 no.3
• /
• pp.199-203
• /
• 2000

$Ta_2_O5$ and $Sr_0.8Bi_2.4Ta_2O_9$ films were deposited on p-type Si(100) substrates by a rf-magnetron sputtering and the metal organic decomposition (MOD), respectively.The electrical characteristics of the $Pt/SBT/Ta_2O_5/Si$ structure were obtained as the functions of $O_2$ gas flow ratio during the $Ta_2_O5$ sputtering and $Ta_2_O5$ thickness. And to certify the role of $Ta_2_O5$ as a buffer layer, the electrical characteristics of $Pt/SBT/Ta_2O_5/Si$ were compared. $Pt/SBT/Ta_2O_5/Si$ capacitor with 20% $O_2$ gas flow ratio during the $Ta_2_O5$ sputtering did now show typical C-V curve of metal/ferroelectric/insulator/semiconductor (MFIS) structure. The capacitor with 20% $O_2$ gas flow ratio during the $Ta_2_O5$ sputtering had the largest memory window. And the memory window was decreased as the $Ta_2_O5$ gas flow ratio during the $Ta_2_O5$ sputtering was increased to 40%, 60%. In the C-V characteristics of the $Pt/SBT/Ta_2O_5/Si$ capacitors with the different $Ta_2_O5$ thickness, the capacitor with 26nm thickness of $Ta_2_O5$ had the largest memory window. The C-V and leakage current characteristics of the Pt/SBT/Si structure were worse than those of $Pt/SBT/Ta_2O_5/Si$ structure. These results and Auger electron spectroscopy (AES) measurement showed that $Ta_2_O5$ films as a buffer layer tool a role to prevent from the formation of intermediate phase and interdiffusion between SBT and Si.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.115-116
• /
• 2012

The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.

• Journal of the Korean Vacuum Society
• /
• v.22 no.5
• /
• pp.245-249
• /
• 2013

The $HfO_X$ thin film was deposited what it has been paid attention to the next generation oxide thin layer of MOSFET (metal-Oxide semiconductor field-effect-transistor) by rf magnetron sputter on Si (100) substrate. The $HfO_X$ thin film was deposited using a various oxygen gas flows (5, 10, 15 sccm). After deposition, $HfO_X$ thin films were annealed from 400 to $800^{\circ}C$ for 20 min in nitrogen ambient. The electrical characteristics of the $HfO_X$ thin film was improved by leakage current properties, depending on the increase of oxygen gas flow and annealing temperature. In particular, the properties of nano-mechanics of $HfO_X$ thin films were measured by AFM and Nano-indenter. From the results, the maximum indentation depth at the basis of maximum indentation force was increased from 24.9 to 38.8 nm according to increase the annealing temperature. Especially, the indentation depth was increased rapidly at $800^{\circ}C$. The rapid increasement of indentation depth was expected to be due to the change of residual stress in the $HfO_X$ thin film, and this result was caused by relative flux of oxygen outgasing during the annealing process.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.15 no.5
• /
• pp.981-986
• /
• 2020

The Internet of Things refers to a space-of-things connection network configured to allow things with built-in sensors and communication functions to interact with people and other things, regardless of the restriction of place or time.IoT is a network developed for the purpose of services for human convenience, but the scope of its use is expanding across industries such as power transmission, energy management, and factory automation. However, the communication protocol of IoT, MQTT, is a lightweight message transmission protocol based on the push technology and has a security vulnerability, and this suggests that there are risks such as personal information infringement or industrial information leakage. To solve this problem, we designed a synchronous MQTT security channel that creates a secure channel by using the characteristic that different chaotic dynamical systems are synchronized with arbitrary values in the lightweight message transmission MQTT protocol. The communication channel we designed is a method of transmitting information to the noise channel by using characteristics such as random number similarity of chaotic signals, sensitivity to initial value, and reproducibility of signals. The encryption method synchronized with the proposed key value is a method optimized for the lightweight message transmission protocol, and if applied to the MQTT of IoT, it is believed to be effective in creating a secure channel.