• Transactions on Electrical and Electronic Materials
• /
• 제5권1호
• /
• pp.7-10
• /
• 2004

A new method for fabrication of transistor like structure of the bifacial solar cell using spin-on doping and electroless plating has been proposed and the basic characteristics of the bifacial cell have been investigated. It is found that 9％ increase in short circuit current is achieved with bifacial connection than the unifacial connection. Some unwanted effect of the series resistance on collection efficiency under different mode of illumination has been pointed out. Loss mechanisms inherent in the transistor like bifacial structure have also been discussed.

• 한국세라믹학회지
• /
• 제49권1호
• /
• pp.43-47
• /
• 2012

Electromigration in molten $Ge_2Sb_2Te_5$ (GST) was characterized using pulsed DC stress to an isolated line structure. When an electrical pulse was applied to the GST, GST lines were melted by Joule heating, and Ge and Sb atoms migrate to the cathode, whereas Te atoms migrate to the anode. This elemental separation in the molten GST was caused by an electrostatic force-induced electromigration. The effects of O-, N-, and Bi-doping on the electromigration were also investigated, and atomic mobility changes by the doping were investigated by quantifying $DZ^*$ values. The Bi -doping did not affect the $DZ^*$ values of the constituent atoms in the molten GST, but the D$DZ^*$ values decreased by O-doping and N-doping.

• 전기학회논문지
• /
• 제60권6호
• /
• pp.1169-1174
• /
• 2011

CdTe thin-film solar cell technology is well known that it can theoretically improve its conversion efficiency and manufacturing costs compared to the conventional silicon solar cell technology, due to its optical band gap energy (about 1.45eV) for solar energy absorption, high light absorption capability and low cost requirements for producing solar cells. Although the prior studies obtained the high light absorption, CdTe thin film solar cell has not been come up to the sufficient efficiency yet. So, doping method was selected for the improvement of the electrical characteristics in CdTe solar cells. Some elements including Cu, Ag, Cd and Te were generally used for the p-dopant as substitutional acceptors in CdTe thin film. In this study, the sputtering-deposited CdTe thin film was immersed in $AgNO_3$ solution for ion exchange method to dope Ag ions. The effects of immersion temperature and Ag-concentration were investigated on the optical properties and electrical characteristics of CdTe thin film by using Auger electron spectroscopy depth-profile, UV-visible spectrophotometer, and a Hall effect measurement system. The best optical and electrical characteristics were sucessfully obtained by Ag doping at high temperature and concentration. The larger and more uniform diffusion of Ag ions made increase of the Ag ion density in CdTe thin film to decrease the series resistance as well as mede the faster diffusion of light by the metal ions to enhance the light absorption.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
• /
• pp.1216-1219
• /
• 2009

Recently,electroluminescence devices based on organic semiconductors have made considerable progress. Displays based on organic light emitting diodes (OLED) are commercially available. To gain broader acceptance, the performance of OLED devices has to be further improved, in particular for lighting. This article discusses the possibility to use controlled electrical doping for improving the properties of devices and new approaches for highly efficient white OLED.

• KIEE International Transactions on Electrophysics and Applications
• /
• 제3C권4호
• /
• pp.140-145
• /
• 2003

The influence of microstructure nonuniformity on the electrical characteristics of ZnO varistors was analyzed with the added amount of $Al_2$O$_3$ dopants. $Al_2$O$_3$ doping can effectively inhibit grain growth. When $Al_2$O$_3$ content is in the range between 0-0.1 %, the average grain size and the standard deviation decrease quickly and the grain growth is strongly inhibited. Therefore, it is possible to increase the microstructure uniformity by accurate addition of $Al_2$O$_3$ to the ZnO varistor. The breakdown voltage increases with the decrease of standard deviation. The greater the uniformity of the Zno varistor means the higher the global breakdown voltage. The $Al_2$O$_3$ dopants having about 0-0.023 wt% content can effectively improve the voltage ratio, and the voltage ratio reaches a minimum value of 2.32 at an $Al_2$O$_3$ content of 0.005 wt%.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.262-263
• /
• 2007

Effect of co-doping on optical and electrical properties of $SnO_2$ based thin films were studied. $SnO_2$ ceramic targets with up to 50mol% $CuSb_2O_6$ were prepared by sintering mixed-oxide compact in the temperature range of $1100^{\circ}C{\sim}1300^{\circ}C$ in air. Thin films were then deposited onto glass substrates by pulsed laser deposition where substrate temperature was maintained in the range of $500{\sim}650^{\circ}C$ with oxygen pressure of 3m~7.5mTorr and energy density of $1Jcm^{-2}$. It was found that with the increase amount of dopant, the electrical properties of thin films tended to improve with the smallest resistivity value obtained at about 8mol% doping, further increase, however, usually impaired the optical transmission in the visible range.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제49권5호
• /
• pp.299-301
• /
• 2000

Analytical expression for the breakdown voltage of the gated diodes were derived as f function of doping concentration and gate voltage, and verified by numerical simulations using ATLAS. The analytical results are in good agreement with simulation results within 5% error when the gate voltage changes from -50V to 130V in case of ND = $1\times1015 cm^{-3}$ and within 10% error when the doping concentration is changed from $5\times1014 cm^{-3}\; to\; 2\times1015 cm6{-3}$, respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.256-256
• /
• 2009

This paper presents a proper condition to achieve above 17 % conversion efficiency using PC1D simulator. Crystalline silicon wafer with thickness of $240{\mu}m$ was used as a starting material. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer. Among the investigated variables, we learn that 2nd doping concentration as a key factor to achieve conversion efficiency higher than 17 %.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.38-38
• /
• 2009

Wafer thickness of crystalline silicon is an important factor which decides a price of solar cell. PC1D was used to fix a condition that is required to get a high efficiency in a crystalline silicon solar cell using thin wafer($150{\mu}m$). In this simulation, base resistivity and emitter doping concentration were used as variables. As a result of the simulation, $V_{oc}$=0.6338(V), $I_{sc}$=5.565(A), $P_{max}$=2.674(W), FF=0.76 and efficiency 17.516(%) were obtained when emitter doping concentration is $5{\times}10^{20}cm^{-3}$, depth factor is 0.04 and sheet resistance is $79.76{\Omega}/square$.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권2호
• /
• pp.174-179
• /
• 1996

We present a new physically based analytical equation for electron effective mobility in MOS inversion layers. The new semi-empirical model is accounting expicitly for surface roughness scattering and screened Coulomb scattering in addition to phonon scattering. This model shows excellent agreement with experimentally measured effective mobility data from three different published sources for a wide range of effective transverse field, channel doping and temperature. By accounting for screened Coulomb scattering due to doping impurities in the channel, our model describes very well the roll-off of effective mobility in the low field (threshold) region for a wide range of channel doping level (Na=3.0*10$^{14}$ - 2.8*10$^{18}$ cm$^{-3}$ ).