Analytical Expressions for the Breakdown Voltage of Gated Diodes

Gated Diode의 항복전압에 관한 해석적 표현

  • Published : 2000.05.01

Abstract

Analytical expression for the breakdown voltage of the gated diodes were derived as f function of doping concentration and gate voltage, and verified by numerical simulations using ATLAS. The analytical results are in good agreement with simulation results within 5% error when the gate voltage changes from -50V to 130V in case of ND = $1\times1015 cm^{-3}$ and within 10% error when the doping concentration is changed from $5\times1014 cm^{-3}\; to\; 2\times1015 cm6{-3}$, respectively.

Keywords

References

  1. S. Colak and E. Stupp, 'Reverse avalanche break down in gated diodes,' Solid St. Electronics, vol. 23, pp. 467-472, 1980 https://doi.org/10.1016/0038-1101(80)90083-0
  2. SILVACO. Two-dimensional device simulation program, user's manual. 1997
  3. W. Fulop, 'Calculation of avalanche breakdown of silicon P-N junctions,' Solid St. Electronics, vol. 10, pp. 39-43, 1967 https://doi.org/10.1016/0038-1101(67)90111-6
  4. B. Baliga and S. Ghandhi, 'Analytical solutions for the breakdown voltage of abrupt cylindrical and spherical junctions,' Solid St. Electronics, vol. 19, pp. 739-744, 1976 https://doi.org/10.1016/0038-1101(76)90152-0