• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.180-183
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• 2000

Beginning with a brief introduction on near 100 nm or below CMOS devices, this paper addresses novel devices for future sub-100 nm CMOS. First, key issues such as gate materials, gate dielectric, source/drain, and channel in Si bulk CMOS devices are considered. CMOS devices with different channel doping and structure are introduced by explaining a figure of merit. Finally, novel device structures such as SOI, SiGe, and double-gate devices will be discussed for possible candidates for sub-100 nm CMOS.

• Transactions on Electrical and Electronic Materials
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• v.6 no.4
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• pp.154-158
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• 2005

Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nano scale components and Si-technology. In this study, molecular electronic devices were fabricated with amino style derivatives as redox-active component. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method and then this LB monolayer is inserted between two metal electrodes. According to the current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. The diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and Al top electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.306-309
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• 2016

The Cs₃Sb photocathode was formed by non-vacuum process technology. An in-situ vacuum device was fabricated successively with flat cesium antimonide photocathode emitters fabricated in a process chamber. The electrical properties of the device were characterized. Electron emission from the devices was induced by photoemitted electrons, which were accelerated by an anode electric field that was shielded from the photoemitter surface. The electrical characteristics of the devices were investigated by measuring the anode current as a function of device operation times with respect to applied anode voltages. Planar blue LED light with a 450 nm wavelength was used as an excitation source. The results showed that the cesium antimonide photocathode emitter has the potential of long lifetime with stable electron emission characteristics in panel devices. These features demonstrate that the cesium antimony photocathodes produced by non-vacuum processing technology is suitable for flat cathodes in panel device applications.

• Electronics and Telecommunications Trends
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• v.35 no.1
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• pp.49-59
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• 2020

This paper describes an IoT-based electrical safety management system for managing the electrical power distribution systems in factories or buildings and for managing private electrical devices in apartment complex. The IoT-based electrical safety management system collects IoT data from the electrical facilities or devices to provide various electrical safety services. In some cases, it uses an IoT adaptor to collect data from legacy facilities. By monitoring and analyzing the IoT data, it is possible to provide protection from and prevent electrical hazards. In addition, an IoT-based electrical safety management system can benefit from using the IoT identification system and standardized data model of the electrical facilities and devices. An IoT identification system is used to increase manageability of large-scale electrical facilities which consists of numerous IoT devices. A standardized data model is used to support interoperability. This paper also explores some international and Korean standards related to IoT-based electrical safety management.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.1
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• pp.128-134
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• 2016

IoT devices including smart devices are connected with internet, thus they have security threats everytime. Particularly, IoT devices are composed of low performance MCU and small-capacity memory because they are miniaturized, so they are likely to be exposed to various security threats like DoS attacks. In addition, in case of IoT devices installed for a remote place, it's not easy for users to control continuously them and to install immediately security patch for them. For most of IoT devices connected directly with internet under user's intention, devices exposed to outside by setting IoT gateway, and devices exposed to outside by the DMZ function or Port Forwarding function of router, specific protocol for IoT services was used and the devices show a response when services about related protocol are required from outside. From internet search engine for IoT devices, IP addresses are inspected on the basis of protocol mainly used for IoT devices and then IP addresses showing a response are maintained as database, so that users can utilize related information. Specially, IoT devices using HTTP and HTTPS protocol, which are used at usual web server, are easily searched at usual search engines like Google as well as search engine for the sole IoT devices. Ill-intentioned attackers get the IP addresses of vulnerable devices from search engine and try to attack the devices. The purpose of this study is to find the problems arisen when HTTP, HTTPS, CoAP, SOAP, and RestFUL protocols used for IoT devices are detected by search engine and are maintained as database, and to seek the solution for the problems. In particular, when the user ID and password of IoT devices set by manufacturing factory are still same or the already known vulnerabilities of IoT devices are not patched, the dangerousness of the IoT devices and its related solution were found in this study.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.67-67
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• 2011

Compound semiconductor/CNTs composites have shown considerably improved efficiency improvement in photovoltaic devices, which is often attributed to two different factors. One is the formation of efficient electronic energy cascade structures. The other effect of CNTs on the performance of photovoltaic devices is the decrement of interfacial resistance. The interfacial resistances at n-type/ p-type materials and/or n-type materials/TCO electrode are reduced by an outstanding electrical property of CNTs. In addition to the effects of CNTs, we report the third reason for increment of efficiency in photovoltaic devices by CNT's well-known electrical field enhancement effects. The improved ${\beta}$ values in reverse-FE currents of CIGS electrode with SWNTs layers indicate the enhancement of electrical field in photovoltaic devices, which implies the acceleration of the electron transfer rate in the cell. Due to the formation of an efficient electronic energy cascade structure and the decrease of the interfacial resistance as well as the improvement of the electrical field in the photovoltaic devices, the power conversion efficiency of electrochemically deposited superstrate-type CIGS solar cells was increased 24.3% in the presence of SWNTs and showed 10.40% conversion efficiency.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1865-1867
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• 2005

Film bulk acoustic resonator (FBAR) devices which adopt an air-gap type (metai/AlN/metal/air/substrate) configuration are fabricated by a novel process. The newly fabricated resonator doesn't employ any supporting layer below it. FBAR devices with the air-gap type are also fabricated using the conventional method. The frequency response characteristics of all the devices fabricated are measured and compared, in terms of the kinds of top and bottom electrode materials. The results show that the better device performance of FBAR devices can be achieved by employing the proposed process.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.477-477
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• 2011

In this paper, we synthesize ZnO wire on Si substrate by catalyst-free thermal chemical vapor deposition (CVD). Each ZnO wire is grew up at different condition such as temperature and O2 flow rate. The Young's modulus of individual ZnO wires were estimated using quasi-static and dynamic measurements, as well as resonance frequency measurements. Using this system, current-voltage characteristics of each ZnO wire structure fabricated on a trench were measured. A new concept of electromechanical device structure combined with the piezoelectric effect of ZnO will be suggested in the end of this paper.

• Journal of Electrical Engineering and Technology
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• v.7 no.5
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• pp.672-680
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• 2012

This paper proposes the control strategy of the shunt Flexible AC Transmission System (FACTS) devices to improve transient stability in multimachine power system. The multimachine power system has high nonlinear response after severe disturbance. The concept of Lyapunov energy function is applied to derive nonlinear control strategy and it was found that the time derivative of line voltage is not only can apply to control the shunt FACTS devices in multimachine system but also is locally measurable signal. The fuzzy logic control is also applied to overcome the uncertainty of various disturbances in multimachine power system. This paper presents the method of investigating the effect of the shunt FACTS devices on transient stability improvement. The proposed control strategy and the method of simulation are tested on the new England power system. It was found that the shunt FACTS devices based on the proposed nonlinear control strategy can improve transient stability of multimachine power system.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1556-1558
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• 2003

IGCT devices is a superior devices for power conversion purpose. The basic structure of the IGCT devices is same as that of GTO thyristor. This makes the blocking voltage higher and controllable on-state current higher. In this paper, we present static and dynamic characteristics of 4.5 kV PT-type IGCT devices as a function of minority carrier lifetime, n-base thickness and n-buffer thickness. We should choose proper structural parameters for good electrical characteristics of GCT devices.