• 전기학회논문지
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• 제61권5호
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• pp.669-675
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• 2012

Recently, the amount of electrical heat pump(EHP), a electrical conditioning equipment, is sharply increasing due to the luxury and multi-story trend of building. Accordingly, the cooling load that occupying substantial part of summer electric consumption has increased dramatically, making difficulties in domestic supply of electricity in summer. There are some efforts to replace it with an alternative cooling equipment such as gas heat pump(GHP), a gas cooling equipment, in order to solve the problem of summer electricity supply through reducing the summer electricity peak. It is rare, however, to find studies on the actual effects of GHP on the reduction of summer electricity peak. This study, therefore, estimated the effects of the GHP on the summer electricity peak by the gas consumption and characteristics of gas cooling systems. In addition, electric substitution effects by gas cooling systems were analyzed through case studies in the summer of 2010.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.158-162
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• 1997

In this paper, the electrical and dielectrical properties were investigated in Pb(Zr,Ti)O$_3$-Pb(Mn,Nb)O$_3$ ceramics which are manufactured with the substitution of Ba in site Pb. In older to increase the del and Kp , Ba was substitued to site Pb from 0 to 0.1 by 0.02 mol%. As the Ba substitution is increased, dielectric constant is increased and electricmachanical coupling factor showed the maximum value at Ba 0.06mol% and the mechanical qualify factor is decreased and the tetragonality and the grain size are decreased as the Ba substitution.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.799-801
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• 1988

This paper was studied on the effects of Ca-La-Nb substitution and Zr/Ti ratio variation to Pb(Zr, Ti)$O_3$ system on structural, electrical, optical and sound level characteristics in order to develope the piezoelectric and electrooptic ceramic devices. Also the specimens were prepared by the two stage sintering technique. The molecular formular was X($CaO{\cdot}1/4La_{2}O_{3}{\cdot}1/4Nb_{2}O_{5}){\cdot}(1-X)Pb(Zr_{Y}Ti_{1-Y})O_{3}$(x=100X, y=100Y), and the variation of x was $6{\sim}12$, y was 60${\sim}$49 and second stage sintering time was 20${\sim}$40 hours. The experimental results obtained from this study are as follows : 1. The density was decreased, the grain size was increased according to increase of Ca-La-Nb substitution. 2. The crystal structure was rhombohedral in composition 6/60/40, and the crystal structure was tetragonal and cubic according to increase of Ca-La-Nb substitution. 3. The Ca substitution of PZT system enhanced the sintering property. The Pb site vacancy resulting from the substitution of La-Nb increased the dielectrical constant, the piezoelectric charge constant, the dielectric loss and decreased the coercive field. 4. The resistivity of PZT system which has the P type conduction mechanism increased according to substitution of La-Nb because of the substituent acting as donor. 5. The PZT ceramics varied from ferroelectric substance according to increase of Ca-La-Nb substituent. The coercive field and saturation remanent polarization decreased, and at last straight line according to increase of La-Nb substitution. 6. The amount of Ca-La-Nb substitution to improve the light transmittance of speciment was 10 mol%, the Zr/Ti ratio was 49/51, and the second stage sintering time was 40 hours. 7. According to Ca-La-Nb substitution, the specimens was to be transparent. The 7.5/51/49 specimen was suitable for transparent sound vibrator because it had 58% light transmittance (thick 0.2[mm], wave length 700[mm]) and 48% electromechanical coupling factor.

• 한국세라믹학회지
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• 제45권8호
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• pp.459-463
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• 2008

$P_2O_5-SnO_2$ system $0.5SnO_2-xP_2O_5-(0.5-x)B_2O_3$(x=0.1, 0.2, 0.3, 0.4, 0.5) glasses have been prepared for Pb-free low temperature glass frit. A investigation about the effect of $B_2O_3$ substitution on properties of $P_2O_5$ glasses, including glass structure properties, thermal properties, and mechanical properties was presented. Substance that is responsible for in moisture absorption existing circumstances supposes by phosphate, and excess moisture tolerance that state funeral's structure is improved breaking does not affect in state funeral bond that only most single bond remains, and can know that does not suffer big impact in boric oxide anomaly present state. This phenomenon estimates that connect with structure change. It is thought according to link this result the phosphoric acid happened structural change. $B_2O_3$ displacement quantity 0.3 mole put out $BO_4$ structures, but above 0.3 mole it changed with the case $BO_3$ structure which it displaces.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2012년도 자성 및 자성재료 국제학술대회
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• pp.170-171
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• 2012

• 한국세라믹학회지
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• 제26권5호
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• pp.601-608
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• 1989

Electrical properties of ZrF4-based heavy metla fluoride glasses were measured by the ac complex impedance method. The effects of alkali and chloride ions addition into fluoro zirconate glasses on the electrical conductivity were examined. The electrical conductivities of fluoride glasses show Arrhenian behavior in the temperature range of the experiment and were decreased by the addition of sodium fluoride up to 15mol%. Mixed alkali substitution resulted in conductivity minimum at intermediate composition which is commonly observed as mixed alkali effect' in alkali oxide glasses. Chloride ion substituted for fluoride ion was found to lower the conductivity.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.48.2-48.2
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• 2010

The effect of additives as rare-earth in dielectric materials has been studied to meet the development trend in electronics on the miniaturization with increasing the capacitance of MLCCs (multi-layered ceramic capacitors). It was reported that the addition of rare-earth oxides in dielectrics would contribute to enhance dielectric properties and high temperature stability. Especially, dysprosium and thulium are well known to the representative elements functioned as selective substitution in barium titanate with perovskite structure. The effects of these additives on microstructure and electric properties were studied. The 0.8 mol% Dy doped $BaTiO_3$ and the 1.0 mol% Tm doped $BaTiO_3$ had the highest electric properties as optimized composition, respectively. According to the increase of rare-earth contents, the growth of abnormal grains was suppressed and pyrochlore phase was formed in more than solubility limits. Furthermore, the effect of two rare-earth elements co-doped $BaTiO_3$ on the dielectric properties and insulation resistance was investigated with different concentration. The dielectric specimens with $BaTiO_3-Dy_2O_3-Tm2O_3$ system were prepared by design of experiment for improving the electric properties and sintered at $1320^{\circ}C$ for 2h in a reducing atmosphere. The dielectric properties were evaluated from -55 to $125^{\circ}C$ (at $1KHz{\pm}10%$ and $1.0{\pm}0.2V$) and the insulation resistance was examined at 16V for 2 min. The morphology and crystallinity of the specimens were determined by microstructural and phase analysis.

• 한국세라믹학회지
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• 제49권3호
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• pp.266-271
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• 2012

The effect of $Bi(Mg_{1/2}Sn_{1/2})O_3$ (BMS) modification on the crystal structure, ferroelectric and piezoelectric properties of $Bi_{1/2}(Na_{0.8}K_{0.2})_{1/2}TiO_3$ (BNKT) ceramics has been investigated. The BMS-substitution induced a transition from a ferroelectric (FE) tetragonal to a nonpolar pseudocubic phase, leading to degradations in the remnant polarization, coercive field, and piezoelectric coefficient $d_{33}$. However, the electric-field-induced strain was significantly enhanced by the BMS substitution-induced phase transition and reached a highest value of $S_{max}/E_{max}$ = 633 pm/V under an applied electric field of 6 kV/mm when the BMS content reached 6 mol%. The abnormal enhancement in strain was attributed to the field-induced transition of the pseudocubic symmetry to other asymmetrical structure, which was not clarified in this work.

• 한국세라믹학회지
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• 제43권11호
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• pp.688-692
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• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

• 한국재료학회지
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• 제14권10호
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• pp.701-706
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• 2004

Bismuth layered structure ferroelectric thin films, La-substituted $Bi_{4}Ti_{3}O_{12}$ ($Bi_{1-x}La_{x}Ti_{3}O_{12}$, x=0.75, BLT) were prepared on the $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin coating process. The thin films were annealed in various conditions, i.e., oxygen, nitrogen and vacuum atmospheres for various annealing time. We investigated the annealing condition effects on the grain orientation and ferroelectric properties. The measured XRD patterns revealed that the BLT thin films showed only $Bi_{4}Ti_{3}O_{12}$-type phase with random orientation. $La^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of $Bi_{4}Ti_{3}O_{12}$ decreased the degree of c-axis orientation and increased the remanent polarization ($2P_{r}$). The remanent polarization ($2P_{r}$) and the coercive field ($2E_{c}$) of the BLT thin film annealed at $650^{\circ}C$ for 5 min in oxygen atmosphere were $87{\mu}C/cm^2$ and 182 kV/cm, respectively, at an applied electric field of 240 kV/cm. For all of the BLT thin films annealed in various conditions, the fatigue resistance was shown. The improvement of ferroelectric properties with La substitution in $Bi_{4}Ti_{3}O_{12}$ could be attributed to the changes in space charge densities and grain orientation in the thin film.