• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권6호
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• pp.330-336
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• 2004

In this work, in order to obtain the detailed information about lightning electromagnetic pulses, the electric fields radiated from multiple lightning return strokes were measured and analyzed statistically. The electric field measuring system consists of a hemisphere antenna of 30cm in diameter, integrator and data acquisition device, and its frequency bandwidth ranges from 200Hz to 1.56MHz, and the sensitivity is 0.96㎷/V/m. The electric field signals are digitized every 200ns with the transient signal analyzer having the resolution of 12-bit and the recording length of 5 kilowords and are registered at personal computer. As a result, the electric fields produced by the first return stroke begin with a slow initial part or front, which starts just after or during the last stepped leader. On the average the rise times of the electric fields for the positive first, second and third strokes are 4.21${\mu}\textrm{s}$, 3.94${\mu}\textrm{s}$ and 2.75${\mu}\textrm{s}$, respectively, and those for the negative first, second and third strokes are 3.46${\mu}\textrm{s}$, 3.15${\mu}\textrm{s}$ and 2.79${\mu}\textrm{s}$, respectively. The zero-crossing times of the electric fields for first return strokes range from about 10 to 80${\mu}\textrm{s}$. The mean zero-crossing times for subsequent return strokes are shorter than those for first lightning return strokes.

• 전기기술인
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• 통권379호
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• pp.26-30
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• 2014

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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• pp.114-118
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• 1989

Due to the increased integration density of VLSI circuits a highly reliable thin oxide film is required to fabricate a small geometry MOS device. The behavior of thermal $SiO_2$ under high electric field and current condition has a major effect on MOS device degration and also the practical use of MOS device under irradiation has cause the degration of thin oxide films. In this paper, in order to evaluate the reliability of thin oxides with no stress applied and stressed by the irradiation under low electric field, the tests of TDDB (Time-dependent-dielectric breakdown) are used. Failure times against electric field are examined and acceleration factor is obtained for each case. Based on the experimental data, breakdown wear out limitation for thin oxide films is characterised.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2001년도 ICCAS
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• pp.118.3-118
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• 2001

CLED (Contact Light Emitting Device) has three layers consisting of a transparent electrode, a light emitting layer and a substrate. When the substrate of the CLED comes in contact with a fingerprint under AC input voltage, it makes an electric field between the fingerprint and the device. Due to the electric field, the light is emitted along the ridgeline of the fingerprint. The intensity along the ridge on the surface of the CLED increase in proportion to the electric field. To achieve uniform performance of fingerprint verification devices, inspection system of CLED for quality control were required. In this research, we proposed the factors for quality controls such as dimensions of the CLED, uniformity ...

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 심포지엄 논문집 정보 및 제어부문
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• pp.98-100
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• 2007

DC Arc Fault Current is an electric discharge which is occurred in two opposite electrode. In this paper, DC arc detection device is designed for the display of DC arc fault current which is occurred in the local electric network with DC Power. This DC arc is one of the main causes of electric fire. Arc fault in electrical network has the characteristics of low current, high impedance and low frequency. DC Arc current detection device is designed for the display of arc fault current which has the modified arc characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.207-208
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• 2007

Recently, high performance microelectronic devices are designed in multi-layer structure in order to make dense wiring of metal conductors in compact size. Imprint lithography have received significant attention due to an alternative technology for photolithography on such devices. In this work, we synthesized dielectric composite materials based on epoxy resin, and investigated their thermal stabilities and dynamic mechanical properties for thermal imprint lithography. In order to enhance the mechanical properties and toughness of dielectric material, various modified polyetherimide(PEI) was applied in the resin system. Curing behaviours, thermal stabilities, and dynamic mechanical properties of the dielectric materials cured with various conditions were studied using dynamic differential scanning calorimetry (DSC), thermo gravimetric analysis (TGA), and Universal Test Method (INSTRON).

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.444-446
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• 1995

This paper deals with semisphere-type sensor fo measuring the electric field waveforms by lightning discharges. The theoretical principle and design rule of the device are introduced, and also the calibration and application investigations are carried out. From the calibration experiments, the frequency bandwidth of the semisphere-type electric field measuring device ranges from 200 [Hz] to 1.56 [MHz], and the sensitivity of sensor is 0.96 [mV/V/m]. The electric field waveforms produced by lightning discharges were observed for June and August 1995. It is shown that the electric field waveforms produced at the distance of more than 50 [km] include only radiation component.

• Journal of Advanced Marine Engineering and Technology
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• 제32권4호
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• pp.596-602
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• 2008

The cooling system is one of the most concerning factor for the reliability of the electric propulsion ship. Generally, a drive system operation in higher temperature decreases the device's reliability and power efficiency. The management of power loss and temperature of switching devices is indispensable for the reliability of the power electric system. In this paper, the switching devices are molded by IGBT, and the propulsion system is consisted of MIIR(Motor with Inverter Internal to Rotor). The system composition interacts with each other to calculate the loss and temperature of device. The calculation result is used for modeling and designing of the control and monitoring system for the electric propulsion system.

• 전기학회논문지
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• 제62권11호
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• pp.1566-1570
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• 2013

In this paper, we analyzed the electric characteristics of the OLEDs device of which anode ITO has been treated with the oxygen plasma. We fabricated the basic three-layer structure (ITO / AF / $Alq_3$ / $Cs_2CO_3$ / Al) device, analyzed how the oxygen plasma treatments of the ITO surface affects to the electrical characteristics of OLEDs. We also produced a four-layer structure device (ITO / AF / TPD / $Alq_3$ / $Cs_2CO_3$ / Al) with the oxygen plasma treatment. From the comparative analysis to the devices, we confirmed following results. The three-layer structure OLEDs device with oxygen plasma treatment has better characteristics than the device without the treatments; maximum luminance, luminous efficiency, and external quantum efficiency are improved approximately 151 [%], 126 [%], and 175[%], respectively. Also, the electric characteristics of the four-layer structure device with oxygen plasma treatment are improved comparing to the characteristics of the three-layer structure device with oxygen plasma treatment; maximum luminance, luminous efficiency, and external quantum efficiency are improved approximately 144 [%], 115 [%], and 124[%], respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.87.2-87.2
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• 2015

Transparent conductors are commonly used in photoelectric devices, where the electric energy converts to light energy or vice versa. Energy consumption devices, such as LEDs, Displays, Lighting devices use the electrical energy to generate light by carrier recombination. Meanwhile, solar cell is the only device to generate electric energy from the incident photon. Most photoelectric devices require a transparent electrode to pass the light in or out from a device. Beyond the passive role, transparent conductors can be employed to form Schottky junction or heterojunction to establish a rectifying current flow. Transparent conductor-embedded heterojunction device provides significant advantages of transparent electrode formation, no need for intentional doping process, and enhanced light-reactive surface area. Herein, we present versatile applications of transparent conductors, such as NiO, ZnO, ITO in photoelectric devices of solar cells and photodetectors for high-performing UV or IR detection. Moreover, we also introduce the growth of transparent ITO nanowires by sputtering methods for large scale application.