• Title/Summary/Keyword: Electric Resistivity

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Thermoelectric Properties of Bi0.4Sb1.6Te3 Sintered Body Fabricated by Mechanical Grinding Process (기계적 밀링공정에 의해 제조된 Bi0.4Sb1.6Te3 소결체의 열전특성)

  • Lee, Gil-Geun;Shin, Sung-Chul;Kim, Woo-Yeol;Ha, Gook-Hyun
    • Journal of Powder Materials
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    • v.13 no.5 s.58
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    • pp.313-320
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    • 2006
  • The present study is to analyze the thermoelectric properties of $Bi_{0.4}Sb_{1.6}Te_3$ thermoelectric materials fabricated by the mechanical grinding process. The $Bi_{0.4}Sb_{1.6}Te_3$ powders were prepared by the combination of mechanical milling and reduction treating methods using simply crushed pre-alloyed $Bi_{0.4}Sb_{1.6}Te_3$ powder. The mechanical milling was carried out using the tumbler-ball mill and planetary ball mill. The tumbler-ball milling had an effect on the carrier mobility rather than the carrier concentration, whereas, the latter on the carrier concentration. The specific electric resistivity and Seebeck coefficient decreased with increasing the reduction-heat-treatment time. The thermal conductivity continuously increased with increasing the reduction-heat-treatment time. The figure of merit of the $Bi_{0.4}Sb_{1.6}Te_3$ sintered body prepared by the mechanical grinding process showed higher value than one of the sintered body of the simply crushed powder.

Study of Thermal Ageing Behavior of the Accelerated Thermally Aged Chlorosulfonated Polyethylene for Thermosetting Analysis (열경화성 분석을 위한 가속열화 된 Chlorosulfonated Polyethylene의 경년특성 연구)

  • Shin, Yong-Deok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.5
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    • pp.800-805
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    • 2017
  • The accelerated thermal ageing of CSPE (chlorosulfonated polyethylene) was carried out for 16.82, 50.45, and 84.09 days at $110^{\circ}C$, equivalent to 20, 60, and 100 years of ageing at $50^{\circ}C$ in nuclear power plants, respectively. As the accelerated thermally aged years increase, the insulation resistance and resistivity of the CSPE decrease, and the capacitance, relative permittivity and dissipation factor of those increase at the measured frequency, respectively. As the accelerated thermally aged years and the measured frequency increase, the phase degree of response voltage vs excitation voltage of the CSPE increase but the phase degree of response current vs excitation voltage decrease, respectively. As the accelerated thermally aged years increase, the apparent density, glass transition temperature and the melting temperature of the CSPE increase but the percent elongation and % crystallinity decrease, respectively. The differential temperatures of those are $0.013-0.037^{\circ}C$ and, $0.034-0.061^{\circ}C$ after the AC and DC voltages are applied to CSPE-0y and CSPE-20y, respectively; the differential temperatures of those are $0.011-0.038^{\circ}C$ and $0.002-0.028^{\circ}C$ after the AC and DC voltages are applied to CSPE-60y and CSPE-100y, respectively. The variations in temperature for the AC voltage are higher than those for the DC voltage when an AC voltage is applied to CSPE. It is found that the dielectric loss owing to the dissipation factor($tan{\delta}$) is related to the electric dipole conduction current. It is ascertained that the ionic (electron or hole) leakage current is increased by the partial separation of the branch chain of CSPE polymer as a result of thermal stress due to accelerated thermal ageing.

Deposition of Micropattern using The Laser Direct Writing Method with a polymer coating layer (폴리머 코팅층 레이저 직접묘화법을 이용한 미세패턴증착)

  • Lee, Bong-Gu
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.15 no.12
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    • pp.6980-6985
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    • 2014
  • A micro-conductive pattern was fabricated on an insulating substrate ($SiO_2$) surface using a laser direct writing method. In the LIFT process, when the laser beam irradiates a thin metal film, the photon energy is absorbed by the film and converted to thermal energy, and the thermal decomposition reaction produced by the resulting heat conduction forms a deposit on the substrate. The resistivity of the micro-electrodes deposited through LIFT process with and without polymer coating was measured. The results showed that the electric conductivity of the micro-pattern and micro-structure can be increased approximatly two times when the deposited micropattern is fabricated through a LIFT process with a polymer coating, compared to the case without a polymer coating.

Mechanical, Electrical Properties and Manufacture of the $\beta$-SiC-$ZrB_2$ Electroconductive Ceramic Composites by Pressureless Sintering (무가압소결한 $\beta$-SiC-$ZrB_2$계 도전성 복합체의 제조 및 기계적, 전기적 특성)

  • Shin, Yong-Deok;Kwon, Ju-Sung
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.2
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    • pp.98-103
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    • 1999
  • The effect of $Al_2O_3$ additives to $\beta-SiC+39vol.%ZrB_2$ electroconductive ceramic composites by pressureless sintering on microstructural, mechanical and electrical properties were investigated. The $\beta-SiC+39vol.%ZrB_2$ ceramic composites were pressureless sintered by adding 4, 8, 12wt.% $Al_2O_3$ powder as a liquid forming additives at $1950^{\cire}C$ for 1h. Phase analysis of composites by XRD revealed mostly of $\alpha-SiC(6H), ZrB_2$ and weakly $\alpha-SiC(4H), \beta-SiC (15R)$ phase. The relative density of composites was lowered by gaseous products of the result of reaction between \beta-SiC and Al_2O_3$, therefore, porosity was increased with increasing $Al_2O_3$ contents, and showed the maximum value of 1.4197MPa.$m^{1/2}$ for composite with 4wt.% $Al_2O_3$ additives. The electrical resistivity of $\beta-SiC+39vol.%ZrB_2$ electroconductive ceramic composite was increased with increasing $Al_2O_3$ contents, and showed positive temperature coefficient resistance (PTCR) in the temperature range of $25^{\cire}C$ to $700^{\cire}C$.

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Characteristics of metal contact for silicon solar cells (실리콘 태양전지의 금속전극 특성)

  • Cho, Eun-Chel;Kim, Dong-Seop;Min, Yo-Sep;Cho, Young-Hyun;Ebong, A.U.;Lee, Soo-Hong
    • Solar Energy
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    • v.17 no.1
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    • pp.59-66
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    • 1997
  • The solar cell electrical output parameters such as the open circuit voltage($V_{oc}$) and short circuit current density($V_{sc}$) are intrinsic characteristics depending on junction depth, doping concentration, metal contacts barriers and cell structure. As a role of thumb for solar cell design, the metal contact barriers for phosphorus doped emitter should have lower work function in order to provide lower series resistance. The fabrication of PESC(passivated emitter solar cell) structure usually involves the use of titanium as a metal contact barrier. Chromium, which work function is similar to titanium but conductance is higher than titanium is being investigated as the new metal contact barrier. Although titanium has lower work function difference than chromium, the electric performances of chromium as contact barrier are higher than titanium. This better performance is attributed to the lower resistivity from chromium. This paper, therefore, compares the attributes of metal barrier contacts using titanium and chromium.

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Corrosion Rate of Buried Pipeline by Induced Alternating Current (교류가 유도되는 매설배관에서의 교류 부식속도 측정에 관한 연구)

  • Song H. S.;Kim Y. G.;Lee S. M.;Kho Y. T.;Park Y. S.
    • Journal of the Korean Institute of Gas
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    • v.5 no.3 s.15
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    • pp.63-72
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    • 2001
  • An alternating current (AC) corrosion using coupon and electric resistance (ER) probe has been studied. Coupon coupled with ER probe were applied in terms of AC voltage from high value to low value through the survey of AC voltages on buried gas transmission pipeline over the country. Parameters such as AC current density of coupon, AC voltage, cathodic protection potential, soil resistivity and frequency were monitored continually. Corrosion induced by AC was observed even under cathodically protected condition that met cathodic protection criterion (below -850mv vs. CSE). Corrosion rate was affected mainly not by AC voltage but by both of frequency and AC current density. An experimental corrosion rate relationship could be obtained statistically, In which AC corrosion rate increased linearly with effective AC current density and its slope was 0.619 in case of coupon and 0.885 in case of ER probe.

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Optimization of Amorphous Indium Gallium Zinc Oxide Thin Film for Transparent Thin Film Transistor Applications

  • Shin, Han Jae;Lee, Dong Ic;Yeom, Se-Hyuk;Seo, Chang Tae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.352.1-352.1
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    • 2014
  • Indium Tin Oxide (ITO) films are the most extensively studied and commonly used as ones of TCO films. The ITO films having a high electric conductivity and high transparency are easily fabricated on glass substrate at a substrate temperature over $250^{\circ}C$. However, glass substrates are somewhat heavy and brittle, whereas plastic substrates are lightweight, unbreakable, and so on. For these reasons, it has been recently suggested to use plastic substrates for flexible display application instead of glass. Many reaearchers have tried to produce high quality thin films at rood temperatures by using several methods. Therefore, amorphous ITO films excluding thermal process exhibit a decrease in electrical conductivity and optical transparency with time and a very poor chemical stability. However the amorphous Indium Gallium Zinc Oxide (IGZO) offers several advantages. For typical instance, unlike either crystalline or amorphous ITO, same and higher than a-IGZO resistivity is found when no reactive oxygen is added to the sputter chamber, this greatly simplifies the deposition. We reported on the characteristics of a-IGZO thin films were fabricated by RF-magnetron sputtering method on the PEN substrate at room temperature using 3inch sputtering targets different rate of Zn. The homogeneous and stable targets were prepared by calcine and sintering process. Furthermore, two types of IGZO TFT design, a- IGZO source/drain material in TFT and the other a- ITO source/drain material, have been fabricated for comparison with each other. The experimental results reveal that the a- IGZO source/drain electrode in IGZO TFT is shown to be superior TFT performances, compared with a- ITO source/drain electrode in IGZO TFT.

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Advance of geophysical exploration techniques for investigation of seawater intrusion (해수침투 평가를 위한 물리탐사기술의 진전)

  • 이상규;황학수;황세호;박인화;성낙훈
    • The Journal of Engineering Geology
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    • v.10 no.2
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    • pp.172-188
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    • 2000
  • This paper presents the state of art and the role of geophysical exploration techniques with evaluating the trend of domestic and worldwide seawater intrusion research, and illustrates advanced techniques obtained through the project of 'Development of the techniques for estimation, prediction, and prevention of seawater intrusion' funded by the Ministry of Science and Technology of Korea. The advanced geophysical interpretation was achieved by adding the digital geophysical logging data. DC resistivity and TEM monitorings were applied to determine whether or not the seawater intrusion was in progress. Induced Polarization technique using electric current monitoring channel was introduced to discriminate seawater contaminated zone from highly conductive layer caused by clay minerals. A conceptual model was suggested with spatial visualization of the study area to predict the diffusion of seawater contamination. Finally, the future work of the development of geophysical techniques was suggested with the base of the present level of them.

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Physical Property Change of the Gapless Semiconductor $PbPdO_2$ Thin Film by Ex-situ Annealing

  • Choo, S.M.;Park, S.M.;Lee, K.J.;Jo, Y.H.;Park, G.S.;Jung, M.H.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.371-372
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    • 2012
  • We have studied lead-based gapless semiconductors, $PbPdO_2$, which is very sensitive to external parameters such as temperature, pressure, electric field, etc[1]. We have fabricated pure $PbPdO_2$, Co- and Mn-doped $PbPdO_2$ thin films using the pulsed laser deposition. Because of the volatile element of Pb, it is very difficult to grow the films. Note that in case of $MgB_2$, Mg is also volatile element. So in order to enhance the quality of $MgB_2$, some experiments are carried out in annealing with Mg-rich atmosphere [2]. This annealing process with volatile element plays an important role in making smooth surface. Thus, we applied such process to our studies of $PbPdO_2$ thin films. As a result, we found the optimal condition of ex-situ annealing temperature ${\sim}650^{\circ}C$ and time ~12 hrs. The ex-situ annealing brought the extreme change of surface morphology of thin films. After ex-situ annealing with PbO-rich atmosphere, the grain size of thin film was almost 100 times enlarged for all the thin films and also the PbO impurity phase was smeared out. And from X-ray diffraction measurements, we determined highly crystallized phases after annealing. So, we measured electrical and magnetic properties. Because of reduced grain boundary, the resistivity of ex-situ annealed samples changed smaller than no ex-situ sample. And the carrier densities of thin films were decreased with ex-situ annealing time. In this case, oxygen vacancies were removed by ex-situ annealing. Furthermore, we will discuss the transport and magnetic properties in pure $PbPdO_2$, Co- and Mn-doped $PbPdO_2$ thin films in detail.

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Comparison of Measured Data and Theoretical Results for Potential Rise of Structure Using Electrolytic Tank Model (수조모델을 이용한 구조체의 전위상승에 대한 측정값과 계산값의 비교)

  • Gil, Hyoung-Jun;Kim, Dong-Woo;Choi, Chung-Seog;Lee, Bok-Hee
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.20 no.5
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    • pp.72-77
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    • 2006
  • This paper presents a comparison of experimental value by electrolytic tank experimental apparatus and calculated value by CDEGS program for potential rise of structure. When a test current flowed through structure models, potential rise was measured and analyzed for types of structure using the electrolytic tank experimental apparatus in real time, and was computed by means of CDEGS program. The structure models were designed and fabricated with four types on a scale of one-one hundred sixty. When the experimental data were compared with the theoretical values, the similar profile was shown. Therefore, the confidence of measurement was obtained. Potential rise was the lowest value at electric cage type(structure model B). The distributions of potential rise are dependent on the resistivity and absorption percentage in concrete attached to structure.