• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.73-73
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• 2008

In this work, the study on the $SiO_2$ film non-uniformity by PECVD (Plasma Enhanced Chemical Vapor Deposition) was performed. Plasma diagnostics was analyzed by a DLP(Double Langmuir Probe) and a probe-type QMS(Quadrupole Mass Spectrometer) in order to investigate the spatial distribution of the plasma species in the chamber. The relationship between the plasma species and the depositing rate of the films was examined. On the basis of this work, it was confirmed that O radical density mainly contributed to the increase in the depositing rate of the $SiO_2$ films and the electron temperature in the plasma had a main effect on the formation of the oxygen radicals.

• Korean Journal of Materials Research
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• v.7 no.7
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• pp.576-581
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• 1997

TDEAT(TI[N(C$_{2}$H$_{5}$)$_{2}$]$_{4}$)와 NH$_{3}$반응기체를 이용하여 MOCVD(Metal Organic Chemical Vapor Deposition)TiN 박막을 형성하였다. 반응기체들은 chamber내에 주입하기 전에 적절한 기상반응을 유도시켜 주었으며, TiN박막 형성에 미치는 예비혼합 효과를 관찰하였다. 두 반응기체의 예비혼합을 이용하여 낮은 탄소의 함유와 함께 -800$\mu$Ωㆍcm의 비교적 낮은 비저항을 나타내었다. 또한 NH$_{3}$의 유량 증가에 따라 도포성이 상당히 증가되고 있는데 이같은 도포성 향상 효과는 기상반응에 의하여 형성되는 중간상의 낮은 흡\ulcorner계수에 기인하는 것으로 여겨진다. QMS(Quadruple Mass Spectrometer)분석을 이용하여 두가지 경쟁적 반응을 포함한 전체 반응식을 제시하였다. TDEAT/NH$_{3}$혼합증착원의 경우 particle이 관찰\ulcorner지 않았으며 이것은 기상반응의 정도를 효과적으로 조절한데 기인하는 것으로 여겨진다. 결과적으로 반응기체의 예비혼합은 막질 및 도포성 개선과 함께 particle생성억제에 매우 효율적인 방법임을 알 수 있었다.다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.234.1-234.1
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• 2015

Molybdenum disulfide (MoS2)는 van der Waals 결합을 통한 층상구조의 물질로써 뛰어난 물리화학적, 기계적 특성으로 Field Effect Transistors (FETs), Photoluminescence, Photo Detectors, Light Emitters 등의 많은 분야에서 연구가 보고 되어지고 있는 차세대 2D-materials이다. 이처럼 MoS2 가 다양한 범위에 응용될 수 있는 이유는 layer 수가 증가함에 따라 1.8 eV의 direct band gap 에서 1.2 eV 의 indirect band-gap으로 특성이 변화할 뿐만 아니라 다양한 고유의 전기적 특성을 지니고 있기 때문이다. 그러나 MoS2 는 원자층 단위의 layer control 이 어렵다는 이유로 다양한 전자소자 응용에 많은 제약이 보고 되어졌다. 본 연구에서는 MoS2 의 layer를 control 하기 위해 ICP system 에서 mesh grid 를 삽입하여 Cl2 radical을 효과적으로 adsorption 시킨 뒤, Ion beam system 에서 Ar+ Ion beam 을 통해 한 층씩 제거하는 방식의 atomic layer etching (ALE) 공정을 진행하였다. ALE 공정시 ion bombardment 에 의한 damage 를 최소화하기 위해 Quadruple Mass Spectrometer (QMS) 를 통한 에너지 분석으로 beam energy 를 20 eV에서 최적화 할 수 있었고, Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy(AFM) 분석을 통해 ALE 공정에 따른 MoS2 layer control 가능 여부를 증명할 수 있었다.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.416-422
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• 1999

The characteristics of inductively coupled Cl$_2$/BCl$_3$ plasmas during the GaN etching were studied using plasma mass spectrometry by measuring the relative amounts of reactive ions, neutrals, and etch products. GaN etch rates increased with the increase of pressure and showed a maximum near 25mTorr for the pure $Cl_2$ and near 30mTorr for $Cl_2$$BCl_3$. The addition of$ BCl_3$ to $Cl_2$ also was increased GaN etch rates until 50%BCl$_3$ was mixed to $Cl_2$. The GaN etching with pure $Cl Cl_2$ appears to be related to the combination of Cl$_2^{+}$ ion bombardment and the chemical reaction of Cl radicals. In the case of the GaN etching with Cl$_2$/BCl$_3$, in addition to the combined effect of$_2^{ +}$ ions and Cl radicals, $_BCl2^{+ }$ ions appear to be responsible for some of GaN etching even though they do not have significant effect on the GaN etching compared to $Cl_2^{+}$ and Cl. $Ga^{+ }$ , $GaCl^{+}$ , $GaCl_2^{+}$ , and $N_2^{+}$ were observed as the positive ions of etch products, and the intensities of these etch products showed the same trends as those of GaN etch rate. Among the etch products, Ga and $N_2$ appear to be the main etch products.

• Journal of Convergence Society for SMB
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• v.3 no.2
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• pp.41-49
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• 2013

According to the globalized trend in the market, corporations of complex business environment have introduced variety of ISO standard in management field to accept all of client demands. However, in most cases, each special management systems have been forced and operated by way of independent form because of surface reason such as international standard or matter of internal concern. Because of this reason, some organization cannot utilize not only corporation and function task but also valuable system data. As a result, these inefficiency cause contradiction of stake, and come into obstacle in competitive situation. Thus, corporates consider plan that they more efficiently by linking different management systems. This is reason why need integration management system. To achieve desired goals by uniting two or more management systems, corporations should understand purpose, form and level. Ultimate purpose of this study is pushing to systematic cooperation by recognizing positive effect of combination, understanding progress step and apprehend problems.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.68-68
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• 2011

As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.114-122
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• 2024

NF₃, Chamber cleaning gas, has a high Global Warming Potential (GWP) of 17,000, causing significant greenhouse effects. Reducing gas usage during the cleaning process is crucial while increasing the cleaning Rate and reducing cleaning standard deviation (Stdev). In a previous study with a 6-inch PECVD chamber, a multiple linear regression analysis showed that Power and Pressure had no significant effect on the cleaning Rate because of their P-values of 0.42 and 0.68. The weight for Flow is 11.55, and the weights for Power and Pressure are 1.4 and 0.7. Due to the limitations of the research equipment, which differed from those used in actual industrial settings, it was challenging to assess the effects in actual industrial environment. Therefore, to show an actual industrial environment, we conducted the cleaning process on a 12-inch PECVD chamber, which is production-level equipment, and quantitatively analyzed the effects of each variable. Power, Pressure, and NF3 Flow all had P-values close to 0, indicating strong statistical significance. The weight for Flow is 15.68, and the weights for Power and Pressure are 4.45 and 5.24, respectively, showing effects 3 and 7 times greater than those with the 6-inch equipment on the cleaning rate. Additionally, we analyzed the cleaning Stdev and derived that there is a trade-off between increasing the cleaning Rate and reducing the cleaning Stdev.

• Analytical Science and Technology
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• v.15 no.5
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• pp.417-426
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• 2002

Inductively Coupled Plasma Dynamic Reaction Cell Quadrupole Mass Spectrometry (ICP-DRC-QMS) was characterized for the detection of the six naturally occurring calcium isotopes. The effect of the operating conditions of the DRC system was studied to get the best signal-to-noise ratio. This experiment shows that the potentially interfering ions such as $Ar^+$, ${CO_2}^+$, ${NO_2}^+$, $CNO^+$ at the calcium masses m/z 40, 42, 43, 44 and 48 were removed by flowing $NH_3$ gas at the rate of 0.7 mL/min $NH_3$ as reactive cell gas in the DRC with a RPq value (rejection parameter) of 0.6. The limits of detection for $^{40}Ca$, $^{42}Ca$, $^{43}Ca$, $^{44}Ca$, and $^{48}Ca$ were 1, 29, 169, 34, and 15 pg/mL, respectively. This method was applied to the determination of calcium in synthetic food digest samples (CCQM-P13) provided by LGC for international comparison. The isotope dilution method was used for the determination of calcium in the samples. The uncertainty evaluation was performed according to the ISO/GUM and EURACHEM guidelines. The determined mean concentration and its expanded uncertainty of calcium was ($66.4{\pm}1.2$) mg/kg. In order to assess our method, two reference samples, Riverine Water reference sample (NRCC SLRS-3) and Trace Elements in Water reference sample (NIST SRM 1643d), were analyzed.

• Asia pacific journal of information systems
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• v.23 no.3
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• pp.25-53
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• 2013

This study analyzes the effect of Computer Aided Innovation (CAI) to improve R&D Capabilities empirically. Survey was distributed by e-mail and Google Docs, targeting CTO of 235 SMEs. 142 surveys were returned back (rate of return 60.4%) from companies. Survey results from 119 companies (83.8%) which are effective samples except no-response, insincere response, estimated value, etc. were used for statistics analysis. Companies with less than 50billion KRW sales of entire researched companies occupy 76.5% in terms of sample traits. Companies with less than 300 employees occupy 83.2%. In terms of the type of company business Partners (called 'partners with big companies' hereunder) who work with big companies for business occupy 68.1%. SMEs based on their own business (called 'independent small companies') appear to occupy 31.9%. The present status of holding IT system according to traits of company business was classified into partners with big companies versus independent SMEs. The present status of ERP is 18.5% to 34.5%. QMS is 11.8% to 9.2%. And PLM (Product Life-cycle Management) is 6.7% to 2.5%. The holding of 3D CAD is 47.1% to 21%. IT system-holding and its application of independent SMEs seemed very vulnerable, compared with partner companies of big companies. This study is comprised of IT infra and IT Utilization as CAI capacity factors which are independent variables. factors of R&D capabilities which are independent variables are organization capability, process capability, HR capability, technology-accumulating capability, and internal/external collaboration capability. The highest average value of variables was 4.24 in organization capability 2. The lowest average value was 3.01 in IT infra which makes users access to data and information in other areas and use them with ease when required during new product development. It seems that the inferior environment of IT infra of general SMEs is reflected in CAI itself. In order to review the validity used to measure variables, Factors have been analyzed. 7 factors which have over 1.0 pure value of their dependent and independent variables were extracted. These factors appear to explain 71.167% in total of total variances. From the result of factor analysis about measurable variables in this study, reliability of each item was checked by Cronbach's Alpha coefficient. All measurable factors at least over 0.611 seemed to acquire reliability. Next, correlation has been done to explain certain phenomenon by correlation analysis between variables. As R&D capabilities factors which are arranged as dependent variables, organization capability, process capability, HR capability, technology-accumulating capability, and internal/external collaboration capability turned out that they acquire significant correlation at 99% reliability level in all variables of IT infra and IT Utilization which are independent variables. In addition, correlation coefficient between each factor is less than 0.8, which proves that the validity of this study judgement has been acquired. The pair with the highest coefficient had 0.628 for IT utilization and technology-accumulating capability. Regression model which can estimate independent variables was used in this study under the hypothesis that there is linear relation between independent variables and dependent variables so as to identify CAI capability's impact factors on R&D. The total explanations of IT infra among CAI capability for independent variables such as organization capability, process capability, human resources capability, technology-accumulating capability, and collaboration capability are 10.3%, 7%, 11.9%, 30.9%, and 10.5% respectively. IT Utilization exposes comprehensively low explanatory capability with 12.4%, 5.9%, 11.1%, 38.9%, and 13.4% for organization capability, process capability, human resources capability, technology-accumulating capability, and collaboration capability respectively. However, both factors of independent variables expose very high explanatory capability relatively for technology-accumulating capability among independent variable. Regression formula which is comprised of independent variables and dependent variables are all significant (P<0.005). The suitability of regression model seems high. When the results of test for dependent variables and independent variables are estimated, the hypothesis of 10 different factors appeared all significant in regression analysis model coefficient (P<0.01) which is estimated to affect in the hypothesis. As a result of liner regression analysis between two independent variables drawn by influence factor analysis for R&D capability and R&D capability. IT infra and IT Utilization which are CAI capability factors has positive correlation to organization capability, process capability, human resources capability, technology-accumulating capability, and collaboration capability with inside and outside which are dependent variables, R&D capability factors. It was identified as a significant factor which affects R&D capability. However, considering adjustable variables, a big gap is found, compared to entire company. First of all, in case of partner companies with big companies, in IT infra as CAI capability, organization capability, process capability, human resources capability, and technology capability out of R&D capacities seems to have positive correlation. However, collaboration capability appeared insignificance. IT utilization which is a CAI capability factor seemed to have positive relation to organization capability, process capability, human resources capability, and internal/external collaboration capability just as those of entire companies. Next, by analyzing independent types of SMEs as an adjustable variable, very different results were found from those of entire companies or partner companies with big companies. First of all, all factors in IT infra except technology-accumulating capability were rejected. IT utilization was rejected except technology-accumulating capability and collaboration capability. Comprehending the above adjustable variables, the following results were drawn in this study. First, in case of big companies or partner companies with big companies, IT infra and IT utilization affect improving R&D Capabilities positively. It was because most of big companies encourage innovation by using IT utilization and IT infra building over certain level to their partner companies. Second, in all companies, IT infra and IT utilization as CAI capability affect improving technology-accumulating capability positively at least as R&D capability factor. The most of factor explanation is low at around 10%. However, technology-accumulating capability is rather high around 25.6% to 38.4%. It was found that CAI capability contributes to technology-accumulating capability highly. Companies shouldn't consider IT infra and IT utilization as a simple product developing tool in R&D section. However, they have to consider to use them as a management innovating strategy tool which proceeds entire-company management innovation centered in new product development. Not only the improvement of technology-accumulating capability in department of R&D. Centered in new product development, it has to be used as original management innovative strategy which proceeds entire company management innovation. It suggests that it can be a method to improve technology-accumulating capability in R&D section and Dynamic capability to acquire sustainable competitive advantage.