• Current Photovoltaic Research
• /
• v.1 no.1
• /
• pp.69-72
• /
• 2013

Combined nano- and micro-wires (CNMWs) Si arrays were prepared using PR patterning and silver-assisted electroless etching. A $POCl_3$ doping process was applied to the fabrication of CNMWs solar cells. KOH solution was used to remove bundles in CNMWs and the etching time was varied from 30 to 240 s. The lowest reflectance of 3.83% was obtained at KOH etching time of 30 s, but the highest carrier lifetime of $354{\mu}s$ was observed after the doping process at 60 s. At the same etching time, a $V_{oc}$ of 574 mV, $J_{sc}$ of $28.41mA/cm^2$, FF of 74.4%, and Eff. of 12.2% were achieved in the CNMWs solar cell. CNMWs solar cells have potential for higher efficiency by improving the post-process and surface-rear side structure.

• Nuclear Engineering and Technology
• /
• v.51 no.8
• /
• pp.2005-2012
• /
• 2019

This work investigated the radiation attenuation characteristics of three series of tellurite glass systems with the following compositions: 30PbO-10ZnO-xTeO₂-(60-x)B₂O₃ where x = 10, 30, 40, 50 and 60 mol%, xBaO-xB₂O₃-(100-2x)TeO₂ with x = 15-40 mol% and 50ZnO-(50-x)P₂O₅-xTeO₂, where x = 0, 10, .40 mol%. The results revealed that the attenuation parameters in all the samples decrease with increase in the energy, which implied that all the samples have better interaction with gamma photons at low energies and thus higher photon attenuating efficiency. From the three systems, the samples coded as PbZnBTe60, BaBTe70 and ZnPTe40 have the lowest half value layer values and accordingly have superior photon attenuation efficacy. The maximum effective atomic number values were found for energy less than 0.1 MeV particularly near the K-edges absorption of the heavy atomic number elements such as Te, Ba and Pb. At the lowest energy, the Z_eff values are found in the range of 62.33-66.25, 49.43-50.81 and 24.99-35.83 for series 1-3 respectively. Also, we found that the density of the glass remarkably affects the photon attenuation ability of the selected glasses. The mean free path results showed that the PbO-ZnO-TeO₂-B₂O₃ glass system has better radiation shielding efficiency than the glass samples in series 2 and 3.

• Korean Journal of Materials Research
• /
• v.27 no.10
• /
• pp.518-523
• /
• 2017

In commercial solar cells, the pattern of the front electrode is critical to effectively assemble the photo generated current. The power loss in solar cells caused by the front electrode was categorized as four types. First, losses due to the metallic resistance of the electrode. Second, losses due to the contact resistance of the electrode and emitter. Third, losses due to the emitter resistance when current flows through the emitter. Fourth, losses due to the shading effect of the front metal electrode, which has a high reflectance. In this paper, optimizing the number of finger on a $4{\times}4$ solar cell is demonstrated with known theory. We compared the short circuit current density and fill factor to evaluate the power loss from the front metal contact calculation result. By experiment, the short circuit current density($J_{sc}$), taken in each pattern as 37.61, 37.53, and $37.38mA/cm^2$ decreased as the number of fingers increased. The fill factor(FF), measured in each pattern as 0.7745, 0.7782 and 0.7843 increased as number of fingers increased. The results suggested that the efficiency(Eff) was measured in each pattern as 17.51, 17.81, and 17.84 %. Throughout this study, the short-circuit current densities($J_{sc}$) and fill factor(FF) varied according to the number of fingers in the front metal pattern. The effects on the efficiency of the two factors were also investigated.

• Nuclear Engineering and Technology
• /
• v.55 no.5
• /
• pp.1763-1774
• /
• 2023

In this study, a series of flexible neutron/gamma shielding composites are fabricated through the doping of Gd₂O₃ into the matrix of SEBS with (M_Gd2O3: M_SEBS) % from 5% to 100%. Neutron transmittance test shows an exponential attenuation with the increase of areal density of Gd, in which the transmittance T ranges from 59.1440% to 35.3026%, with standard deviation less than 2.2743%, mass attenuation coefficient 𝜇_m from 0.3194 cm²/g to 0.4999 cm²/g, and half value layer-HVL value from 2.4530 mm to 1.1313 mm. Shielding efficiency of the Gd₂O₃/SEBS composites is basically improved in comparison with that of B₄C/SEBS. The transmittance T, mass/linear attenuation coefficient 𝜇_m and 𝜇, HVL and effective atomic number Z_eff for the shielding of γ rays (39 keV, 59 keV and 122 keV) are measured and calculated with XCOM as well as MCX programs. Finally, plots of the three dimensional relationships between transmittance, doping amount and thickness are provided to the guidance for engineering shielding design. In summary, the Gd₂O₃/SEBS composite is proved to be an effective flexible neutron/low energy γ rays shielding material, which could be of potential applications in the field of nuclear technology and nuclear engineering.

• Nuclear Engineering and Technology
• /
• v.55 no.12
• /
• pp.4642-4646
• /
• 2023

The Tb³⁺ or Eu³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor were fabricated by funace at 1500 ℃ for 12 h using a solid state reaction. The XRD (X-ray diffraction_Panalytical X'Pert Pro) and FE-SEM (field emission scanning electron microscope) are measured to confirm the crystalline structure and surface morphology of the phosphor. The Tb³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor emits the lights in 470~650 nm wavelength range due to transitions from ⁵D₄ to ⁷F_j. Therefore, it shows the green region in the CIE chromaticity diagram under both UV and X-rays excitations. The Eu³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor emits the lights in 550~750 nm wavelength range because of ⁵D_i to ⁷F_j. The emission is confirmed to be in the red region using the CIE chromaticity diagram. The Tb³⁺ or Eu³⁺-doped Lu₂Gd₁Ga₂Al₃O₁₂ phosphor shows the characteristic f-f transition with a long decay time, which is about several milliseconds. They have the high efficiency of light emission for X-ray because of their high effective Z number (Z_eff = 58.5) and density. Therefore, they are very much promising phosphors for X-ray imaging application in medical fields.

• Korean Journal of Fisheries and Aquatic Sciences
• /
• v.43 no.1
• /
• pp.54-62
• /
• 2010

With the aim of developing and indoor overwintering technique for Pearl oyster, Pinctada fucata martensii, the metabolic rates of young oysters (52.4-83.0 mm in shell length) were measured for 2 weeks at water temperatures of 8, 10, 12, and $14^{\circ}C$. The filtration rate (FR) ranged 0 to $4.84\;L\;h^{-1}gDW^{-1}$ (mean, $0.02{\pm}0.06 $ to $3.12{\pm}1.45$), with significant changes observed over thme except for the case of a water temperature of $14^{\circ}C$. Respiration rate (R) ranged from 0 to $2.370\;mgO2\;h^{-1}gDW^{-1}$ (mean, 0 to $1.77{\pm}0.37$), with significant respiratory disorders observed at temperatures below $12^{\circ}C$; in contrast, the rate increased on the $14^th$ day of the experiment in the case of a temperature of 14$^{\circ}C$. No significant difference was observed among the different water temperatures in terms of excretion rate (E) or absorption efficiency (Abs.eff), except for a significant decrease in aerobic metabolism in the case of water temperature of $8^{\circ}C$. The estimated scope for growth (SFG) ranged from -9.1 to $126.9\;J\;h^{-1}gDW^{-1}$ (mean. $-4.1{\pm}2.6$ to $82.85{\pm}42.6$). A significant energy Joss was found at $8^{\circ}C$, with negative SFG observed throughout the experiment and a gradual energy decrease observed over time at water temperatures of $10^{\circ}C$ and 120C. However. SFG remained positive throughout the experiment in the case of $14^{\circ}C$. The estimated minimum energy requirement, assessed from energy expenditure, is $8.00-34.24\;J\;h^{-1}gDW^{-1}$ (mean, $17.67{\pm}6.17$). In conclusion, the lowest temperature suitable for indoor overwintering is above $14^{\circ}C$.

• Solar Energy
• /
• v.20 no.2
• /
• pp.43-54
• /
• 2000

We prepared and characterized $Cu(In_{1-x}Ga_x)Se_2$(CIGS) films using a elemental co-evaporation method for absorbing layer of high efficiency thin film solar cells. The CIGS films deposited on a soda-lime glass exhibited low resistivity because of higher carrier concentration. Na was accumulated at the CIGS surface and the 0 and Se were also accumulated at the surface, suggesting that oxidation is a driving force of Na accumulation. The structure of CIGS film was modified or a secondary phase was formed in the Cu-poor CIGS bulk films probably due to the incorporation of Na into Cu vacancy sites. As the Ga/(In+Ga) ratio increased, the diffraction peaks of $Cu(In_{1-x}Ga_x)Se_2$ films were shifted to larger angle and splitted, and the grain size of $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films became smaller. All $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films showed the p-type conductivity regardless of the Ga/(In+Ga) ratio. Ag/n-ZnO/i-ZnO/CdS/$Cu_{0.91}(In_{0.7}Ga_{0.3})Se_2$/Mo solar cells were fabricated. The currently best efficiency in this study was 14.48% for $0.18cm^2$ area ($V_{oc}=581.5mV,\;J_{sc}=34.88mA$, F.F=0.714).