• Journal of the Computational Structural Engineering Institute of Korea
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• v.15 no.1
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• pp.85-94
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• 2002

In this study an adaptive node generation procedure in the Element-free Galerkin (EFG) method using bubble-meshing technique is Proposed. Since we construct the initial configuration of nodes by subdivision of background cell, abrupt changes of inter-nodal distance between higher and lower error regions are unavoidable. This unpreferable nodal spacing induces additional errors. To obtain the smooth nodal configuration the nodal configurations are regenerated by bubble-meshing technique. This bubble meshing technique was originally developed to generate a set of well-shaped triangles and tetrahedra. In odder to evaluate the effect of abrupt changes of nodal spacing, one-dimensional problems with various nodal configurations mere investigated. To demonstrate the performance of proposed scheme, the sequences of making optimal nodal configuration with bubble meshing technique are investigated for several problems.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.83-90
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• 2023

The β-Ga₂O₃ has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga₂O₃ has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga₂O₃ single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga₂O₃ single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga₂O₃ were prepared by adding different mole ratios of SnO₂ powder to Ga₂O₃ powder, and β-Ga₂O₃ single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga₂O₃ single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga₂O₃ single crystal according to the Sn doping were extensively investigated.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.14 no.4
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• pp.525-535
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• 2001

In this paper, a new adaptive analysis scheme for element-free Galerkin method(EFGM) is proposed. The novel point of this scheme is that the triangular cell structure based on the Delaunay triangulation is used in the numerical integration and the node adding/removing process. In adaptive analysis with this scheme, there is no need to divide the integration cell and the memory cell structure. For the adaptive analysis of crack propagation, the reconstruction of cell structure by adding and removing the nodes on integration cells based the estimated error should be carried out at every iteration step by the Delaunay triangulation technique. This feature provides more convenient user interface that is closer to the real mesh-free nature of EFGM. The analysis error is obtained basically by calculating the difference between the values of the projected stresses and the original EFG stresses. To evaluate the performance of proposed adaptive procedure, the crack propagation behavior is investigated for several examples.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.9
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• pp.73-84
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• 2004

This paper suggests a new scalar multiplication algerian to resist SPA which threatens the security of cryptographic primitive on the hardware recently, and discusses how to apply this algerian Our algorithm is better than other SPA countermeasure algorithms aspect to computational efficiency. Since known SPA countermeasure algorithms have dependency of computation. these are difficult to construct parallel architecture efficiently. To solve this problem our algorithm removes dependency and computes a multiplication and a squaring during inversion with parallel architecture in order to minimize loss of performance. We implement hardware logic with VHDL(VHSIC Hardware Description Language) to verify performance. Synthesis tool is Synplify Pro 7.0 and target chip is Xillinx VirtexE XCV2000EFGl156. Total equivalent gate is 60,508 and maximum frequency is 30Mhz. Our scalar multiplier can be applied to digital signature, encryption and decryption, key exchange, etc. It is applied to a embedded-micom it protects SPA and provides efficient computation.

• Journal of Chest Surgery
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• v.34 no.2
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• pp.138-147
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• 2001

배경: 폐암발생에 EGF의 자가 분비는 암의 성장과정에 직, 간접적인 영향을 주고 있으며, TNF-$\alpha$는 면역 반응의 급성체로서 폐암의 발생을 억제하고 이미 발생한 폐암종의 치료에도 이용되고 있는 실정이다. 폐암 조직과 혈장에서 epidermal growth factor(EGF)와 tumor necrosis factor-$\alpha$(TNF-$\alpha$)를 면역 방사선 분석법을 이용하여 정량분석 하여 발현 정도를 분석해보고자 하였다. 대상 및 방법: 폐암환자 20례와 양성종양 및 육아종 환자 4례에 대해서 AJCCS에 의한 조직학적 분류와 TNM 분류에 따라 구분하여 절제수술을 받은 환자를 대상으로 수술전 혈액을 채취하고 수술직후 적출한 표본을 암이 없는 건강하다고 판단되는 대조조직과 폐암조직에서 일정량의 조직을 절취하여 액화질소 내에 실험시까지 급속 냉동보관 하였다. 수술후 혈액을 재 채취하여 혈장을 분리하여 냉동고에 검사시까지 보관하였다. EGF의 정량은 Human Epidermal Growth Factor kit(Amersham Phamacia Biotech, England)를 사용하였으며, TNF-$\alpha$ 정량은 TNF-$\alpha$ IRMA kit(Biosouce, Belgium)을 사용하여 IRMA 방법으로 각각 정량분석하여 표현유무를 연구한 결과 다음과 같은 결론을 얻었다. 결과: 1. 대조조직, 양성종양 및 육아종과 폐암 수술전후의 조직과 혈청 모두에서 EGF와 TNF-$\alpha$가 발현되었다. 2. EGF와 TNF-$\alpha$의 농도는 대조조직과 양성종양(0.11$\pm$0.06 ng/ml, 20,3$\pm$9.08 pg/ml)에 비하여 폐암조직(0.13$\pm$0.05 ng/ml, 34.34$\pm$47.74pg/ml)에서 유의하게 높은 농도가 발현되고 있었다. 3. 폐암중 선암조직에서 특히 TNF-$\alpha$(80.92$\pm$104.08 ng/ml)의 발현이 강하게 나타났다. 4. 혈청내의 EGF와 TNF-$\alpha$의 발현되는 양이 조직내의 양보다도 높았다. EGF는 5.7배정도 TNF는 1.3배정도 강하게 표현되었다. 5. 폐암의 조직학적 종류에 따라서 EGF는 거의 차이가 없었으나 TNF-$\alpha$ 정량치에는 차이가 있었다. 6. TNM stage가 진행함에 따라 EGF는 농도가 증가하였고 TNF-$\alpha$는 오히려 감소하는 반대되는 교차현상이 있었다. 7. 수술직후 EGF는 증가하였으나 TNF-$\alpha$는 오히려 감소하였다. 결론: 결론적으로 저자는 암조직과 대조조직간에 EGF와 TNF-$\alpha$의 표현량의 차이가 있음을 관찰하였으며 또한 조직과 혈청사이에도 표현량에 차이가 있으며 조직보다도 오히려 혈청내의 농도가 높다는 사실을 관찰하였다. EFG와 TNF-$\alpha$는 정상조직이나 양성조직과 폐암조직 모두에서 분비작용되는 cytokines으로 세포기능에 따라 다양하게 표현이 되며 계속적인 연구로서 밝혀야만 할 과제라고 판단된다.