The dependence of the properties of InP grown by chloride vapor phase epitaxy on the growth temperature and on the $PCl_3/H_2$ molar fraction
(Chloride VPE법에 의한 InP 에피층 성장시 성장온도 및 $PCl_3/H_2$ 몰비에 따른 특성변화)
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- Journal of the Korean Vacuum Society
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- v.6 no.1
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- pp.61-68
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- 1997