• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.210-210
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• 2003

ECR(Electron Cyclotron Resonance)은 전자기장에 의한 회전주파수와 전원으로 가해지는 마이크로웨이브(microwave)의 주파수가 일치할 때 발생하는 공진(resonance)현상이다. ECR에 의해 형성된 고밀도, 고에너지의 플라즈마가 상온하에서도 표면에너지가 낮은 고분자수지상에 접착력과 내구성 및 성능이 우수한 금속박막을 형성시킬 수 있는 특징을 지니고 있다. [1] 이러한 고분자수지 표면에 제조되는 금속박막소재는 반도체산업을 비롯하여, 박막전지, 전자파 차폐 등의 다양한 용도로 개발되고 있다. 그러나, 고분자수지와 금속박막계면간의 접착성의 저하로 후처리 공정에서 외부의 응력을 받게되면 막이 쉽게 탈리되는 문제점이 대두되었고, 이에 대한 개선이 요구되고 있다. 따라서, 본 연구에서는 공업적으로 많이 사용되는 표면 전처리방법을 통하여 구리 박막의 접착력을 향상시키고자 하였다. 상온화학증착 방법에 의해 고분자수지표면에 구리금속박막을 제조하고 여러 가지 표준방법을 사용하여 고분자수지와 구리박막간의 접착특성을 조사하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.55.2-55.2
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• 2009

A polymer electrolyte membrane (PEM) fuel cell has been getting large interest as a typical issue in useful applications. The PEMFC is composed of a membrane, catalyst and the bipolar plate. SnOx:F films on SUS316 stainless steel were prepared as a function of substrate with using electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD) in order to achieve the corrosion-resistant and low contact resistance bipolar plates for PEM fuel cells. The SnOx:F films coated on SUS316 substrate at surface plasma treatment for excellent stability, before/after heat treatment for good crystalline structure and microwave power for were characterized by X-ray diffraction (XRD), auger electron microscopy (AES) and field emission-scanning electron microscopy (FE-SEM). The SnOx:F film coated on SUS316 substrate with various process parameters were able to observe optimum interfacial contact resistance (ICR) and corrosion resistance. It can be concluded that fluorine-doping content plays an important function in electrical property and characteristic of corrosion-protective film.

• Journal of Hydrogen and New Energy
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• v.22 no.3
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• pp.283-291
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• 2011

Polymer electrolyte membrane fuel cells (PEMFCs) use the bipolar plate of various materials between electrolyte and contact electrode for the stable hydrogen ion exchange activation. The bipolar plate of various materials has representatively graphite and stainless steel. Specially, stainless steels have advantage for low cost and high product rate. In this study, SUS 316 was effectively coated with 600 nm thick F-doped tin oxide (SnOx:F) by electron cyclotron resonance-metal organic chemical vapor deposition and investigated in simulated fuel cell bipolar plates. The results showed that an F-doped tin oxide (SnOx:F) coating enhanced the corrosion resistance of the alloys in fuel cell bipolar plates, though the substrate steel has a significant influence on the behavior of the coating. Coating SUS 316 for fuel cell bipolar plates steel further improved the already excellent corrosion resistance of this material. After coating, the increased ICR values of the coated steels compared to those of the fresh steels. The SnOx:F coating seems to add an additional resistance to the native air-formed film on these stainless steels.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.647-650
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• 2002

A lateral type GaN field emission diodes were fabricated by utilizing metal organic chemical vapor deposition (MOCVD). In forming the pattern, two kinds of procedures were proposed: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for 7 ${\mu}m$ gap and an emission current of ${\sim}580$ nA/10tips at anode-to-cathode voltage of 100 V These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.93-101
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• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.2 s.31
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• pp.29-35
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• 2004

Hafnium-oxide gate dielectric films deposited by a metal organic chemical vapor deposition technique on a $N_2-plasma$ treated SiNx and a hydrogen-terminated Si substrate have been investigated. In the case of $HfO_2$ film deposited on a hydrogen-terminated Si substrate, suppressed crystallization with effective carbon impurity reduction was obtained at $450^{\circ}C$. X-ray photoelectron spectroscopy indicated that the interface layer was Hf-silicate rather than phase separated Hf-silicide and silicon oxide structure. Capacitance-voltage measurements show equivalent oxide thickness of about 2.6nm for a 5.0 nm $HfO_2/Si$ single layer capacitor and of about 2.7 nm for a 5.7 nm $HfO_2/SiNx/Si$ stack capacitor. TEM shows that the interface of the stack capacitor is stable up to $900^{\circ}C$ for 30 sec.

• Journal of the Korean Electrochemical Society
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• v.8 no.3
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• pp.139-145
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• 2005

[ $SnO_x$ ] films on the flexible substrate of PET film were prepared at ambient temperature under a $(CH_3)_4Sn(TMT: tetra-methyl tin)-H_2-O_2$ atmosphere in order to obtain transparent conductive polymer by using ECR-MOCVD(Electro Cyclotron Resonance Metal Organic Chemical Yfpor Deposition) system. The prepared $SnO_x$ thin films show generally over $90\%$ of optical transmittance at wavelength range of 380-780nm and about $1\times10^{-2\~3}ohm{\cdot}cm$ of electrical resistivity. In the present study, effects of $O_2/TMT\;and\;H_2/TMT$ mole ratio on the properties of $SnO_x$ films are investigated and the other process parameters such as microwave power, magnetic current power, substrate distance and working pressure are fixed. Based on our experimental results, the $SnO_x$ film composition ratio of Sn and O directly influences on the electrical and optical properties of the films prepared. The $SnO_x$ film with low electric resistivity and high transmittance could be obtained by controlling the process parameters such as $O_2/TMT\;and\;H_2/TMT$ mole ratio, which play an important role to change the composition ratio between Sn and O. An increase of $O_2/TMT$ mole ratio brought on the increases 0 content in the $SnO_x$ film. On the other hand, an increase of $H_2/TMT$ mole ratio lead to decreases the oxygen content in the film. The optimized composition ratio of oxygen : tin Is determined as 2.4: 1 at $O_2/TMT$ of 80 and $H_2/TMT$ of 40 mole ratio, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.671-677
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• 2001

A RuO$_2$ Schottky photo-detector was designed and fabricated with GaN layers on the sapphire substrate. For good absorption of UV light, an epitaxial structure with undoped GaN(0.5 ${\mu}{\textrm}{m}$)/n￣-GaN(0.1${\mu}{\textrm}{m}$)/n＋-GaN(1.5${\mu}{\textrm}{m}$) was grown by MOCVD. The structure had the carrier concentrations of 3.8$\times$10$^{18}$ cm￣$^3$, the mobility of 283$\textrm{cm}^2$/V.s. After ECR etching process for mesa structure with the diameter of about 500${\mu}{\textrm}{m}$, Al ohmic contact was formed on GaN layer. After proper passivation between the contacts with Si$_3$/N$_4$, was formed on undoped GaN layer. The fabricated Schottky diode had a specific contact resistance of 1.15$\times$10$^{-5}$ ［$\Omega$.$\textrm{cm}^2$］. It has a low leakage current of 305 pA at -5 V, which was attributed by stable characteristics of RuO$_2$ Schottky contact. In optical measurement, it showed the high UV to visible extinction ratio of 10$^{5}$ and very high responsivity of 0.23 A/W at the wavelength of 365nm.