• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.421-422
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• 2011

The first part is about development of a liquid target for a neutron source, which is designed to overcome many of the limitations of traditional beam-target neutron generators by utilizing a liquid target neutron source. One of the most critical aspects of the beam-target neutron generator is the target integrity under the beam exposure. A liquid target can be a good solution to overcome damage to the target such as target erosion and depletion of hydrogen isotopes in the active layer, especially for the one operating at high neutron fluxes with no need for water cooling. There is no inherent target lifetime for the liquid target neutron generator when used with continuous refreshment of the target surface exposed to the energetic beam. In this work, liquid target containing hydrogen has been developed and tested in vacuum environment. Potentially, liquid targets could allow a point neutron source whose spatial extension is on the order of 1 to $10{\mu}m$. And the second is about the vacuum ultraviolet (VUV) spectrometer which is designed as a five-channel spectral system for ITER main plasma measurement. To develop and verify the design, a two-channel prototype system was fabricated with No. 3 (14.4 nm~31.8 nm) and No. 4 (29.0 nm~60.0 nm) among the five channels. For test of the prototype system, a hollow cathode lamp is used as a light source. The system is composed of a collimating mirror to collect the light from source to slit, and two holographic diffraction gratings with toroidal geometry to diffract and also to collimate the light from the common slit to detectors. The two gratings are positioned at different optical distances and heights as designed. To study the appropriate detector for ITER VUV system, two different electronic detectors of the back-illuminated charge coupled device and the micro-channel plate electron multiplier were installed and the performance has been investigated and compared in the same experimental conditions. The overall system performance was verified by measuring the spectrums.

• Food Science of Animal Resources
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• v.29 no.2
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• pp.194-202
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• 2009

This study was conducted to determine the effects of gamma and e-beam irradiation on the quality of minced pork and pork patties. Each sample was irradiated at 5 to 20kGy, and its quality characteristics were then evaluated during storage at 30. The results of the total bacterial populations in the minced-pork and pork patty samples showed that the antimicrobial effect of gamma irradiation was superior to that of e-beam irradiation. The 2-thiobarbituric acid reactive substances (TBARS) value of all the samples significantly increased (p<0.05) as the irradiation dose and storage period increased. In addition, the gamma-irradiated (GI) samples had higher (p<0.05) TBARS values than the e-beam-irradiated (EI) samples. The volatile basic nitrogen contents of the GI samples were lower (p<0.05) than those of the EI samples. The color values, such as the $L^*$(brightness), $a^*$(redness), and $b^*$(yellowness) of the minced pork and pork patties, were increased (p<0.05) by irradiation. The hardness and sensory properties, such as the color, chewiness, taste, and overall acceptability of the pork patties, were decreased when the irradiation dose increased, and the hardness and sensory scores of the GI samples were lower than those of the EI samples.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.132-132
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• 1998

Ion bombardment in the keV range is known to induce drastic chemical modifications in organic and inoranic molecular comppounds. A degrading effects in orgainc materials such as the release of ppolymer compponents and the chemistry of the iradiation pprocess have been observed. The work to be described was carried out in order to understand the irradiation effect better. The sampple(ppolyimide : Kappton ) Were irradiated by Ar+, Ne+, H+ ions and electrons (3 keV) to fluence ranging from ~1$\times$1015 to ~1$\times$1017 ions/$cm^2$ at room tempperature. The impplant was usually rastered over an area of a few $cm^2$ . These ion impplantation were carried out in an electron sppectrometer ESCA 5700 (ppHI Ltd) at a residual gas ppressure of ~5$\times$10-10 Torr. X-ray pphotoelectron sppectroscoppy(XppS) measurements were made using a monochromatized Al Kａ(1486.6 eV) excitation source. The pphotoemitted electrons were detected by hemisppherical analyser with a ppass energy of 23.5 eV. Core-level binding energies were referenced to the Fermi level. To avoid the charging effect it was used the neutralizer. We studied the irradiation effects on ppolyimide with Ar+, Ne+, He+ ions and electrons by XppS which 추 pprovide detailed information concerning the bonding-induced changes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.135-138
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• 2005

현재 널리 상용되어 있는PDP는 3전극 변방전형이다. 3전극 면장전형 PDP는 주방전이 유전체 아래에 서로 평행하게 위치하고 있는 ITO투명전극 사이에서 발생한다. 따라서 방전시의 전기장은 MgO 보호막 위에서 아치형태로 형성되게 된다. 플라스마 방전 시 전자에 의해 이온화된 이온 입자들은 전기장에 의해 그 방전경로가 정해지게 된다. 물론 전기장은 표면에서 수직이지만 전기장에 의해 가속되어진 이온입자들은 MgO 보호막에 기울어져서 입사하게 된다. 따라서 플라스마 방전시의 이온들의 MgO 보호막으로의 입사각은 매우 다양하다. $\gamma$-FIB (Focused ion beam) 시스템은 이온입사에 의한 물질의 이차전자방출계수 측정에 효과적인 장비이다. 본 실험은 이러한 $\gamma$-FIB 시스템을 이용하여 다양한 각도로 입사하는 이온빔에 의한 MgO 보호막의 이차전자방출계수를 측정하였다. 또한 이온화 에너지가 다른 여러 종류의 불활성 기체를 사용하여 이온의 입사하는 각도에 따른 MgO 보호막의 일함수를 측정하였다. 이온빔의 입사각은 각각 $0^{\circ}$, $10^{\circ}$, $20^{\circ}$, $30^{\circ}$로 변화시키면서 이차전자방출계수 및 일함수를 측정하였다. 이러한 실험을 통해 입사각이 클수록 이차전자방출계수는 증가하고 일수는 감소하는 것을 확인 할 수 있었다.

• Nuclear Engineering and Technology
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• v.47 no.3
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• pp.380-387
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• 2015

A lead slowing-down spectrometer (LSDS) system is a promising nondestructive assay technique that enables a quantitative measurement of the isotopic contents of major fissile isotopes in spent nuclear fuel and its pyroprocessing counterparts, such as $^{235}U$, $^{239}Pu$, $^{241}Pu$, and, potentially, minor actinides. The LSDS system currently under development at the Korea Atomic Energy Research Institute (Daejeon, Korea) is planned to utilize a high-flux ($>10^{12}n/cm^2{\cdot}s$) neutron source comprised of a high-energy (30 MeV)/high-current (~2 A) electron beam and a heavy metal target, which results in a very intense and complex radiation field for the facility, thus demanding structural shielding to guarantee the safety. Optimization of the structural shielding design was conducted using MCNPX for neutron dose rate evaluation of several representative hypothetical designs. In order to satisfy the construction cost and neutron attenuation capability of the facility, while simultaneously achieving the aimed dose rate limit (< $0.06{\mu}Sv/h$), a few shielding materials [high-density polyethylene (HDPE)eBorax, $B_4C$, and $Li_2CO_3$] were considered for the main neutron absorber layer, which is encapsulated within the double-sided concrete wall. The MCNP simulation indicated that HDPE-Borax is the most efficient among the aforementioned candidate materials, and the combined thickness of the shielding layers should exceed 100 cm to satisfy the dose limit on the outside surface of the shielding wall of the facility when limiting the thickness of the HDPE-Borax intermediate layer to below 5 cm. However, the shielding wall must include the instrumentation and installation holes for the LSDS system. The radiation leakage through the holes was substantially mitigated by adopting a zigzag-shape with concrete covers on both sides. The suggested optimized design of the shielding structure satisfies the dose rate limit and can be used for the construction of a facility in the near future.

• Journal of the Korean Magnetics Society
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• v.12 no.5
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• pp.184-188
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• 2002

The Cu/Ni/Cu(002)/Si(100) films which have perpendicular magnetic anisotropy were deposited by e-beam evaporation methods. From the reflection high energy electron diffraction pattern, the films were confirmed to be grown epitaxially on silicon. After 2X lots ions/$\textrm{cm}^2$ C+ irradiation, magnetic easy-axis was changed from surface normal to in-plane as shown in the hysteresis loop of magneto-optical Kerr effects. It became manifest from analysis of X-ray reflectivity and grazing incident X-ray diffraction that even though interface between top Cu layer and Ni layer became rougher, the contrast of Cu and Ni's electron density became manifest after ion irradiation. In addition, the strain after deposition of the films was relaxed after ion irradiation. Strain relaxation related with change of magnetic properties and mechanism of intermixed layer's formation was explained by thermo-chemical driving force due to elastic and inelastic collision of ions.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• Journal of the korean academy of Pediatric Dentistry
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• v.23 no.3
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• pp.640-658
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• 1996

The purpose of this study was to examine the mechanism of improving acid resistance of Nd-YAG laser irradiated tooth enamel and determine the most effective energy density for improving acid resistance. The bovine tooth enamel were lased with a pulsed Nd-YAG laser. The energy densities of exposed laser beam were varied from 10 to $70\;J/cm^2$. To investigate the degree of improving acid resistance by irradiation, all the samples were submerged to demineralize in 0.5 N $HClO_4$ solution for 1 minute. After 1 minute, 0.05 % $LaCl_3$ was added to the solution for interrupting the demineralization reaction. The amounts of dissolved calcium and phosphate in the solution were measured by using an atomic absorption spectrophotometer and the UV/VIS spectrophotometer, respectively. To examine the mechanism of improving acid resistance, X-ray diffraction analysis, infrared spectroscopy, and scanning electron microscopy were taken. The X-ray diffraction pattern of the samples were obtained in the $10^{\circ}{\sim}80^{\circ}2{\theta}$ range with $Cu-K{\alpha}$ radiation using M18HF(Mac Science Co.) with X-ray diffractometer operating at 40 KV and 300 mA. The infra-red spectra of the ground samples in 300 mg KBr pellets 10 mm diameter were obtained in the $4000cm^{-1}\;to\;400cm^{-1}$ range using JASCO 300E spectrophotometer. The scanning electron microscopy was carried out using JSM6400(JEOL Co.) with $500{\sim}2000$ times magnification. The results were as follow 1. The concentration of calcium dissolved from laser irradiated enamel with $50J/cm^2$ was significantly lesser than that of unlased control group (p<0.05) 2. From the result of the X-ray diffraction analysis, $\beta$-TCP, which increases acid solubility, was identified in lased enamel but the diffraction peaks of (002) and (004) became sharp with increasing energy density of laser irradiation. This means that the crystals in lased samples were grown through the c-axis and subsequently, the acid solubility of enamel decreased. 3. The a-axis parameter was slightly increased by laser irradiation, whereas the c-axis parameter was almost constant except for a little decrease at $50J/cm^2$. 4. In the infra-red spectra of lased enamels, phosphate bands ($600{\sim}500cm^{-1}$), B-carbonate bands (870, $1415{\sim}1455cm^{-1}$), and A-carbonate band ($1545cm^{-1}$) were observed. The amounts of phosphate bands and the B-carbonate bands were reduced, on the other hand, the amount of the A-carbonate band was increased by increase the energy density. 5. The SEM experiments reveal that the surface melting and recrystallization were appeared at $30J/cm^2$ and the cracks were observed at $70J/cm^2$. From above results, It may be suggested that the most effective energy density for improving acid resistance of tooth enamel with the irradiation of Nd-YAG laser was $50J/cm^2$. The mechanism of improving acid resistance were reduction of permeability due to surface melting and recrystallization of lased enamel and reduction of acid solubility of enamel due to decrease of carbonate content and growth of crystal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.