• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.301-305
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• 2016

We investigate proton conduction in a nonstoichiometric ${\Sigma}3$ $BaZrO_3$ (210)[001] tilt grain boundary using density functional theory (DFT). We employ the space charge layer (SCL) and structural disorder (SD) models with the introduction of protons and oxygen vacancies into the system. The segregation energies of proton and oxygen vacancy are determined as -0.70 and -0.54 eV, respectively. Based on this data, we obtain a Schottky barrier height of 0.52 V and defect concentrations at 600K, in agreement with the reported experimental values. We calculate the energy barrier for proton migration across the grain boundary core as 0.61 eV, from which we derive proton mobility. We also obtain the proton conductivity from the knowledge of proton concentration and mobility. We find that the calculated conductivity of the nonstoichiometric grain boundary is similar to those of the stoichiometric ones in the literature.

• Macromolecular Research
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• v.10 no.2
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• pp.75-79
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• 2002

Organic materials have considerable attention as active semiconductors for device applications such as thin-film transistors (TFTs) and diodes. Pentacene is a p-type organic semiconducting material investigated for TFTs. In this paper, we reported the morphological and electrical characteristics of pentacene TFT films. The pentacene transistors showed the mobility of 0.8 $\textrm{cm}^2$/Vs and the grains larger than 1 ${\mu}{\textrm}{m}$. Deep-level transient spectroscopy (DLTS) measurements were carried out on metal/insulator/organic semiconductor structure devices that had a depletion region at the insulator/organic-semiconductor interface. The duration of the capacitance transient in DLTS signals was several ten of seconds in the pentacene, which was longer than that of inorganic semiconductors such as Si. Based on the DLTS characteristics, the energy levels of hole and electron traps for the pentacene films were approximately 0.24, 1.08, and 0.31 eV above Ev, and 0.69 eV below Ec.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.558-565
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• 2020

AZO thin films are grown on a p-Si(111) substrate by RF magnetron sputtering. The characteristics of various thicknesses and heat treatment conditions are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall effect and room-temperature photoluminescence (PL) measurements. The substrate temperature and the RF power during growth are kept constant at 400 ℃ and 200 W, respectively. AZO films are grown with a preferred orientation along the c-axis. As the thickness and the heat treatment temperature increases, the length of the c-axis decreases as Al³⁺ ions of relatively small ion radius are substituted for Zn²⁺ ions. At room temperature, the PL spectrum is separated into an NBE emission peak around 3.2 eV and a violet regions peak around 2.95 eV with increasing thickness, and the PL emission peak of 300 nm is red-shifted with increasing annealing temperature. In the XPS measurement, the peak intensity of Al_2p and O_ll increases with increasing annealing temperature. The AZO thin film of 100 nm thickness shows values of 6.5 × 10¹⁹ cm^-3 of carrier concentration, 8.4 cm^-2/V·s of mobility and 1.2 × 10^-2 Ω·cm electrical resistivity. As the thickness of the thin film increases, the carrier concentration and the mobility increase, resulting in the decrease of resistivity. With the carrier concentration, mobility decreases when the heat treatment temperature increases more than 500 ℃.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.292-292
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• 2011

TFT (Thin Film Transistor)에서 공정을 단순화 시키고, 가격을 하락시키기 위해서는 Poly-Si을 대체할 물질이 필요하다. 이 연구에서는 Chalcogenide Material의 하나인 GeTe 박막을 이용하여 TFT Channel으로 사용 가능한 물질인지 알아보기 위하여 Post-Annealing을 한 뒤, 상 변화에 따른 박막의 저항 변화, Carrier Concentration (cm-3)과 Mobility (cm2V-1s-1)의 변화를 알아보았다. Sputtering을 이용하여 증착한 GeTe 100 nm Thin Film 위에 Sputtering을 이용하여 SiO2 5 nm를 Capping Layer로 증착한 후, Post-Annealing을 200$^{\circ}C$, 300$^{\circ}C$, 400$^{\circ}C$, 500$^{\circ}C$로 온도를 변화 시키며 진행하였고, 이로 인하여 GeTe Thin Film에 외부의 영향을 최소화 하였다. 먼저 GeTe Thin Film의 Sheet Resistance를 측정한 결과는 300$^{\circ}C$ 까지 낮은 Sheet Resistance의 거동을 보이며 반면, 400$^{\circ}C$ 이상이 되면 높은 Sheet Resistance의 거동을 보인다. Hall Measurement를 통해, Carrier Concentration과 Mobility를 알아보았다. Carrier Concentration은 온도가 증가하면 1E+19에서 1E+21 까지 증가하며, Mobility는 감소하는 경향을 보인다. 500$^{\circ}C$ Post-Annealed GeTe Thin Film에서는 Resistivity가 상당히 높아 4 Point Probe (Range : 1 mohm/sq~2 Mohm/sq)로 측정이 불가능하다. XRD로 GeTe Thin Film을 분석한 결과 as-grown, 200$^{\circ}C$, 300$^{\circ}C$에서는 Cubic의 결정 구조를 보이며, Sheet Resistance가 급격히 증가한 400$^{\circ}C$, 500$^{\circ}C$에서는 Rhombohedral의 결정구조를 보인다. GeTe Thin Film은 400$^{\circ}C$ 이상의 Post-Annealing 온도에서 cubic 구조에서 Rhombohedral 구조로 상 변화가 일어난다. 위 결과를 통해, 결정 구조의 변화가 GeTe Thin Film의 저항, Carrier Concentration과 Mobility에 밀접한 영향이 미치는 것을 확인하였다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.6B
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• pp.387-395
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• 2005

In this paper, we propose an end-to-end mobility management and TCP flow control scheme which considers different link characteristics for vertical handover environments. The end-to-end mobility management is performed by using SIP protocol. When a mobile node moves to a new network, it informs its movement of the correspondent node by sending SIP INFO message containing a new IP address which will be used in the new network. And then the corresponding node encapsulates all packets with the new IP address and sends them to the mobile node. in general, RTT of WLAN is shorter than RTT of cdma2000. when the MN moves from WLAN network to cdma2000 network, TCP retransmission timeout will be occurred in spite of non congestion situations. Thus, TCP congestion window size will be decreased and TCP throughput will be also decreased. To prevent this phenomenon, we propose a method using probe packets after handover to estimate a link delay of the new network. We also propose a method using bandwidth ratio of each network to update RTT. It is shown through NS-2 simulations that the proposed schemes can have better performance than the previous works.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.13 no.5
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• pp.2338-2356
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• 2019

Vehicular ad-hoc network (VANET) is the name of technology, which uses 'mobile internet' to facilitate communication between vehicles. The aim is to ensure road safety and achieve secure communication. Therefore, the reliability of this type of networks is a serious concern. The reliability of VANET is dependent upon proper communication between vehicles within a given amount of time. Therefore a new formula is introduced, the terms of the new formula correspond 1 by 1 to a class special ST route (SRORT). The new formula terms are much lesser than the Inclusion-Exclusion principle. An algorithm for the Source-to-Terminal reliability was presented, the algorithm produced Source-to-Terminal reliability or computed a Source-to-Terminal reliability expression by calculating a class of special networks of the given network. Since the architecture of this class of networks which need to be computed was comparatively trivial, the performance of the new algorithm was superior to the Inclusion-Exclusion principle. Also, we introduce a mobility metric called universal speed factor (USF) which is the extension of the existing speed factor, that suppose same speed of all vehicles at every time. The USF describes an exact relation between the relative speed of consecutive vehicles and the headway distance. The connectivity of vehicles in different mobile situations is analyzed using USF i.e., slow mobility connectivity, static connectivity, and high mobility connectivity. It is observed that $p_c$ probability of connectivity is directly proportional to the mean speed ${\mu}_{\nu}$ till specified threshold ${\mu}_{\tau}$, and decreases after ${\mu}_{\tau}$. Finally, the congested network is connected strongly as compared to the sparse network as shown in the simulation results.

• Journal of Advanced Navigation Technology
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• v.28 no.3
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• pp.288-299
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• 2024

Indonesia's Keplauan Liau region is facing limitations in the development of connected transportation infrastructure due to its archipelago nature, budget constraints, and lack of land. Transportation demand is increasing due to its strategic location in the Malacca Strait Business Triangle and many tourist visits from Singapore and Malaysia. However, due to the nature of connecting many islands, the establishment of transportation infrastructure has not been achieved. This paper aims to predict the innovations that can be brought about by the introduction of advanced air mobility (AAM) with an electric vertical take-off and landing (e-VTOL) system through analysis and application consideration of the actual situation in Indonesia's Kepulauan Liau region. In addition, it intends to contribute to national-level review and policy establishment on the establishment of innovative transportation infrastructure using AAM, reflection in infrastructure construction plans, and active global cooperation.

• Journal of Advanced Navigation Technology
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• v.28 no.2
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• pp.201-209
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• 2024

This study investigates the operational facets of low-density urban air mobility (UAM) from an airline's perspective amid burgeoning concerns about urban congestion in megacities. UAM, employing electric vertical takeoff and landing (eVTOL) technology, emerges as a potential remedy to the challenges of traffic gridlock and environmental degradation. As the UAM market progresses from initial stages to maturity, tailored traffic control systems become paramount. Focused on the context of low-density environments during UAM's inception, this research scrutinizes operational frameworks, essential infrastructure, and likely scenarios. It aims to bolster the safety and efficiency of UAM operations by delving into the specifics of traffic control concepts designed for these unique settings. The study seeks to significantly contribute to optimizing UAM's initial phases, providing insights into crucial operational dynamics for a smoother integration of urban air mobility into contemporary urban landscapes.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.62.3-63
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• 2003

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.181-187
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• 1998

The ionization energy and degree of ionization for p-type $Si_{1-x}Ge_x$ with boron doping are calculated taking into account the screening and broadening effects. The drift and Hall mobilities are then calculated using the relaxation time approximation and compared with the previously reported measurement data for relaxed and strained $Si_{1-x}Ge_x$ alloys to estimate the alloy scattering potential. From a fit, the alloy scattering potential is found to be 0.5 eV. The in-plane drift mobility for p-type strained $Si_{1-x}Ge_x$ grown on (001) Si substrate is approximately 1+$10x^2$ times higher than that for bulk Si in the high doping range.