• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.63-66
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• 2004

Transparent MgO thin films were deposited on glass substrates by electron beam evaporation of MgO (99.99%) under $O_2$ atmosphere at 150-250 $^{\circ}C$. These films were characterized for their useful properties such as thickness, transmission, and refractive index using ultraviolet / visible (UV/VIS) spectrophotometer, scanning electron microscopy (SEM), and Spectroscopic Ellipsometry. The thickness of MgO films were measured by alpha step instrument and found to be 600 nm to 1000 nm and are meeting the stoichiometry. The transmission spectrum of these films shows transmittance values ${\sim}$92%..

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.481-489
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• 1994

The $SnO_2$/(n)Si solar cell was fabricated by electron beam evaporation method, and their properties were investigated. In proportion to increase of substrate and annealing temperature, the conductivity of $SnO_2$ thin film was increased, but its optical transmission decreases because of increasing optical absorption of free electrons in the thin film. $SnO_2$/Si Solar cell characteristics were improved by annealing, but the solar cells was deteriorated by heat treatment above 500[.deg. C]. The optimal outputs of $SnO_2$/Si solar cell through above investigations were $V_{\var}$:350[mV], $J_{sc}$ ;16.53[mA/c $m^{2}$], FF;0.41, .eta.=4.74[%]

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.60-68
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• 2000

The optical constants ($E_g^d$, n, K) of the polycrystalline CdSe thin films deposited on the glass substrate by the electron-beam evaporation technique are determined over 400~2,500 nm photon wavelengths. In order to explain the variation of the optical contents with film thickness and substrate temperatures, the surface microstructural parameter are investigated by AFM (atomic forced microscope( images for the films deposited by different growth conditions. It is shown that the variations of optical constants are close related to changes of the surface morphology of the CdSe thin films. The decrease in the band gap with film thickness is connected with quantum size effects due to increase of the grain size. The refractive index of CdSe films decrease with increasing the grain size of the films, and the dispersion of the refractive index followed a single oscillator model according to the Sellmeier formulation.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.229-229
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• 2012

Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

• Journal of Surface Science and Engineering
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• v.54 no.1
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• pp.25-29
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• 2021

The fabrication of nanopore membrane by deposition of Al2O3 film using electron-beam evaporation, which is fast, cost-effective, and negligible dependency on substance material, is investigated for potential applications in water purification and sensors. The decreased nanopore diameter owing to increased wall thickness is observed when Al2O3 film is deposited on anodic aluminum oxide membrane at higher deposition rate, although the evaporation process is generally known to induce a directional film deposition leading to the negligible change of pore diameter and wall thickness. This behavior can be attributed to the collision of evaporated Al2O3 particles by the decreased mean free path at higher deposition rate condition, resulting in the accumulation of Al2O3 materials on both the surface and the edge of the wall. The reduction of nanopore diameter by Al2O3 film deposition can be applied to the nanopore membrane fabrication with sub-100 nm pore diameter.

• Journal of the Korean Vacuum Society
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• v.3 no.1
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• pp.111-116
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• 1994

본 연구는 CdS, CdSe 분말을 불순물, flux와 혼합하여 질소 분위기에서 소결한 후 전자빔으로 증착하여 적절한 조건에서 열처리 하였다, 이 박막의 결정구조를 X-ray 회절 실험을 통하여 조사하고 제작된 CdS1-xSex 발광 소자의 전기적 특성은 Hall 효과 측정을 이용하고 광학적특성은 광발광 및 광전 류 스펙트럼, 감도, 최대 허용소비전력, 응답시간 등을 분서하교, 발광소자로서의 기능을 검토하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.255.2-255.2
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• 2009

• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.135-139
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• 2009

$H_2S$ micro-gas sensors have been developed employing $SnO_2$:CuO composite thin films. The films were prepared by e-beam evaporation of Sn and Cu metals on silicon substrates, followed by oxidation at high temperatures. Results of various studies, such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) reveal that $SnO_2$ and CuO are mutually non-reactive. The CuO grains, which in turn reside in the inter-granular regions of $SnO_2$, inhibit grain growth of $SnO_2$ as well as forming a network of p-n junctions. The film showed more than a 90% relative resistance change when exposed to $H_2S$ gas at 1 ppm in air at an operating temperature of $350^{\circ}C$ and had a short response time of 8 sec.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1758-1760
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• 1998

MgO Protecting layer in AC PDP prevents ion bombardment in discharge plasma. The MgO layer also has the additional importance in lowering the firing voltage due to a large secondary electron emission coefficient. Until now, the MgO protecting layer is mainly prepared by E-beam Evaporation. However, the optimum activation manufacturing process of MgO thin film wasn't well known. Therefore in this study, after MgO protecting layer is prepared on dielectric layer by E-beam evaporation and liquid MgO spin coating, we carried out activation process of MgO thin film as a parameter of Temperature, Operating time and Operating pressure. In addition, discharge characteristics are also studied as a parameter of activation conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.408-408
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• 2010

현재 AC-PDP에서는 이온 sputtering 으로부터 유전층을 보호하기 위하여 유전체 위에 MgO 박막을 증착하여 사용하고 있으며 MgO 박막은 높은 2차 전자 방출 계수와 내 sputtering 특성을 가지고 있다. MgO 박막은 증착 조건에 따라 각각 다른 방전특성을 가지는 것으로 널리 알려져 있어 본 실험에서는 MgO 박막을 증착하는데 사용하는 pellet의 크기를 변화시켜가면서 MgO박막을 증착하여 그에 따른 방전특성을 고찰해 보았다. 각각의 MgO pellet의 크기는 1.5, 0.5 mm 와 60 um이며, 기존의 MgO pellet의 크기는 6 mm 이다. MgO pellet 을 E-beam evaporation 방법으로 증착하여 최적화된 test panel을 제작하였다. 제작된 test panel의 방전 전압 특성을 측정하였으며, 실험 결과 AC-PDP의 면방전 구동 시 MgO pellet의 크기가 작아짐에 따라 방전 개시 전압과 방전 유지 전압이 약 11 %, 16 % 감소하였다. 그러나 MgO pellet의 크기가 60 um 경우의 방전 개시 전압은 MgO pellet의 크기가 0.5 경우의 방전 개시 전압과 차이가 없었다. 이는 MgO 증착시에 사용되는 pellet은 적정의 크기가 있는 것으로 보인다.