• Earthquakes and Structures
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• v.21 no.6
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• pp.653-667
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• 2021

In this study, cyclic loading tests were conducted on the precast concrete (PC) wide beam (WB)-column joints. Two beam-column joint specimens were fabricated with the arrangement and anchorage details of the reinforcing bars penetrating the beam and column as variables. Through a cyclic loading test, the lateral load-story drift ratio responses, seismic performance characteristics (e.g., ductility, overstrength factor), energy dissipation, strength and stiffness degradations of each specimen were compared and analyzed based on the various indices and the current structural codes (ACI 318-19 and ACI 374.1-05 report). In addition, the shear lag effect was confirmed through the gauge values of the PC beam, and the differences in seismic performance between the specimens were identified on that basis.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.133-133
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• 1998

In the thin film alloy formation of the transition metals ion-beam-mixing technique forms a metastable structure which cannot be found in the arc-melted metal alloys. Sppecifically it is well known that the studies about the electronic structure of ion-beam-mixed alloys pprovide the useful information in understanding the metastable structures in the metal alloy. We studied the electronic change in the ion-beam-mixed ppt-Ct alloys by XppS and XANES. These analysis tools pprovide us information about the charge transfer in the valence band of intermetallic bonding. The multi-layered films were depposited on the SiO2 substrate by the sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr. These compprise of 4 ppairs of ppt and Cu layers where thicknesses of each layer were varied in order to change the alloy compposition. Ion-beam-mixing pprocess was carried out with 80 keV Ae+ ions with a dose of $1.5\times$ 1016 Ar+/cm2 at room tempperature. The core and valence level energy shift in these system were investigated by x-ray pphotoelectron sppectroscoppy(XppS) pphotoelectrons were excited by monochromatized Al K ａ(1486.6 eV) The ppass energy of the hemisppherical analyzer was 23.5 eV. Core-level binding energies were calibrated with the Fermi level edge. ppt L3-edge and Cu K-edge XANES sppectra were measured with the flourescence mode detector at the 3C1 beam line of the ppLS (ppohang light source). By using the change of White line(WL) area of the each metal sites and the core level shift we can obtain the information about the electrons pparticippating in the intermetallic bonding of the ion-beam-mixed alloys.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.6
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• pp.71-77
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• 2014

In this paper, we investigated the effects of high-energy electron beam irradiation (HEEBI) on the optical transmittance of InGaZnO (IGZO) films grown on transparent Corning glass substrates, with a radio frequency magnetron sputtering technique. The IGZO thin films deposited at low temperature were treated with HEEBI in air at room temperature (RT) with an electron beam energy of 0.8 MeV and doses of $1{\times}10^{14}-1{\times}10^{16}electrons/cm^2$. The optical transmittance of the IGZO films was measured using an ultraviolet visible near-infrared spectrophotometer (UVVIS). The detailed estimation process for separating the transmittance of HEEBI-treated IGZO films from the total transmittance of IGZO films on transparent substrates treated with HEEBI is given in this paper. Based on the experimental results, we concluded that HEEBI with an appropriate dose of $10^{14}electrons/cm^2$ causes a maximum increase in the transparency of IGZO thin films. We also concluded that HEEBI treatment with an appropriate dose shifted the optical band gap ($E_g$) toward the lower energy region from 3.38 to 3.31 eV. This $E_g$ shift suggested that HEEBI in air at RT with an appropriate dose acts like a thermal annealing treatment in vacuum at high temperature.

• Korean Journal of Applied Biomechanics
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• v.19 no.1
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• pp.49-58
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• 2009

This study aims to analyze the association between the center of mass(C.O.G) and ocular movement(E.O.G) according to the success and failure in the left turn motion on the balance beam, targeting three female gymnasts. When successful, the left-right C.O.G was moved to the left, which was a rotational direction until such time as the body rotated $180^{\circ}$, whereas there appeared to be a greater movement during failure; thus, it was shown to affect the maintenance of dynamic postural control. In case of the subsequent left-right turning motion of E.O.G, this matches the previous theory that the eyeball moves against the direction of rotation of the body. However, there was a difference at the time of movement, and a clear difference emerged in the success and failure in this study. Also, in the E.O.G in the up-down direction, a movement during failure showed a pattern of down direction in most cases; thus, it is deemed to affect the failure. Therefore, the kinetic postural control and E.O.G are supposed to affect the success and failure in a landing, which is the most importantly evaluated movement on the balance beam, in mutual association.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.687-692
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• 1998

Silicon doped $Al_{0.32}Ga_{0.68}As$ were growth by molecular beam epitaxy. Electroreflectance(ER) spectra of the $E_1$ transition of Schottky barrier Au/n-$Al_{0.32}Ga_{0.68}As$ have been measured at various modulation voltage($V_{ac}$) and dc bias voltage($V_{bias}$). from the $E_1$peak, band gap energy of the $Al_{0.32}Ga_{0.68}As$ is 1.883 eV which corresponds to an Al composition of 32%. As modulation voltage($V_{bias}$) is changed, a line shape at the $E_1$transition does not change, but its amplitude varies linearly. The amplitude of $E_1$signal decrease with increasing the forward dc bias voltage($V_{bias}$), but the line shape does not change. It suggests that the low field theory rather than Franz-Keldysh oscillation is Required to interpret spectra. Also, spectra at the $E_1$transition were broadened with increasing the reverse dc bias voltage($V_{bias}$) which suggests the presence of Field-induced broadening.

• Food Science and Preservation
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• v.21 no.3
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• pp.381-387
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• 2014

Food irradiation is one of the successful modern techniques used to preserve food. However, it needs very careful control. Detection of irradiated food is of prime importance to facilitate global trade and consumer assurance, choice, and protection. This study was performed to evaluate the radiation-induced hydrocarbon content of dried squid and octopus by e-beam irradiation. The samples were collected from supermarkets all over South Korea and irradiated with an e-beam at 0, 1, 3, 5, 7, and 10 kGy doses. Lipids were extracted with soxhelt, and the hydrocarbons induced with irradiation were separated via solid phase extraction (SPE) and identified via gas chromatography mass spectrometry (GC/MS). The major induced hydrocarbons in the irradiated dried squid and octopus were 1-tetradecene and pentadecane derived from palmitic acid and 1-hexadecene and heptadecane from stearic acid. The concentration of hydrocarbons differed from the composition of the fatty acid at the same radiation and increased according to the level of the radiation dose. The hydrocarbons induced by e-beam irradiation, including 1-tetradecene, 1-hexadecene, and heptadecane, were confirmed to have been the irradiation marker compounds. Therefore, they can be used to distinguish the e-beam-irradiated dried squid and octopus from the non-irradiated ones.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.142-145
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• 2005

AC-PDP에서 발광 휘도와 발광 효율의 개선은 매우 중요한 과제중의 하나이다. 높은 발광 휘도와 발광 효율을 위해선 VUV의 높은 발광 효율이 요구되어진다. 이 실험에서는 AC-PDP에서 Ne-Xe의 2원 혼합기체와 He-Ne-Xe의 3원 혼합기체의 VUV 발광 세기를 측정하였다. 기체 압력은 200 Torr, 300 Torr, 400 Torr, 500 Torr로 유지하였고, Xe 혼합비는 1%, 2%, 4%, 7%, 10%, 15%를 사용하였다. 진공자외선 발광 세기는 He-Ne-Xe의 3원 혼합기체가 Ne-Xe의 2원 혼합기체보다 발광 세기가 훨씬 높다는 것을 알 수 있었다. 그리고 Xe 함량이 증가함에 따라 공명선인 147 nm의 발광 세기는 Xe 혼합비가 약 10%까지는 증가하다가 10% 이후에는 포화되고, 반면 분자선인 173 nm은 Xe 함량과 가스 압력이 증가함에 따라 발광 세기가 증가하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.131-134
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• 2005

PDP 방전 셀의 최적화 및 진공자외선 발광효율을 향상시키기 위한 목적으로 AC - PDP 미소방전에서 제논 여기종 원자의 밀도를 측정하는 레이저 흡수법을 개발하였다. 본 연구에서는 PDP 셀의 기체 압력을 350Torr, 제논 함량 10%로 고정하고, 전극 위에서의 여러 위치에서 준안정 준위 제논의 밀도를 흡수법으로 측정하였다. 실험 결과 제논 여기종의 밀도의 최대값은 전극의 위치(가장자리에서 안쪽으로의 거리)가 $50{\mu}m$, $120{\mu},\;150{\mu}m$ 일 때 $3.5{\times}10^{12}cm^{-3}$, $2.8{\times}10^{12}cm^{-3}$, $2.2{\times}10^{12}cm^{-3}$로 나타났다.

• Ceramist
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• v.10 no.3
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• pp.86-90
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• 2007

Novel photochromic oxide glasses are presented in this section. These glasses are based on phosphate formers containing both tungsten and antimony atoms. Exposure to visible continuous or pulsed laser beam results in an intense photochromic effect witch is shown to occur in the volume of the glass and results in a broad absorption band in the visible and near infrared. This effect was not identified to be related with a structural change and is assumed to be entirely electronic. A change in the absorption coefficient is observed in function of tungsten content, exposure time and increases with beam power. These glasses have been investigated regarding the possibility of holographic data storage using visible lasers sources. Changes in both refractive index and the absorption coefficient were measured using a holographic setup. The modulation of the optical constants is reversible by heat treatment.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.2
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• pp.77-81
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• 2011

Aluminum nitride (AlN) thin films were prepared by using nitrogen ion beam assisted reactive radio frequency (RF) magnetron sputtering on the glass substrates without intentional substrate heating. After deposition, the effect of nitrogen ion beam energy on the structural and optical properties of AlN films were investigated by x-ray diffraction (XRD), atomic force microscope (AFM) and UV-Vis. spectrophotometer, respectively. AlN films deposited with $N^+$ ion irradiation at 100 eV show the higher (002) peak intensity in XRD pattern than other films. It means that $N^+$ ion energy of 100 eV is the favorable condition for low temperature crystallization. AFM images also show that surface average roughness is increased from 1.5 to 9.6 nm with $N^+$ ion energy in this study. In an optical observation, AlN films which deposited by $N^+$ ion beam energy of 100 eV show the higher transmittance than that of the films prepared with the other $N^+$ ion beam conditions.