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Highly Reliability Network Technology for Transmitting a Disaster Information (재해정보 전송을 위한 고신뢰성 네트워크 기술)

  • Kim, Kyung-Jun;Kim, Dongju;Jang, Dae-Jin;Oh, Eun-Ho;Kim, Jin-Man
    • Journal of the Korea Society of Computer and Information
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    • v.20 no.3
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    • pp.115-124
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    • 2015
  • In this paper we analyse the previous (Quality of Services) and QoE(Quality of Experience) methods, and propose a high reliable network system framework and its service forwarding method that is able to provide seamless N-Screen services for proliferating disaster informations. The service satisfaction measurement, i.e., QoE, of contents consumers in N-screens services is going to be important the factor in disaster information proliferation because N-Screen services in the previous methods based on multi devices only focused on information transmission. The proposed system around these services is composed of a disaster information process framework for accepting user's service requirement, push service modules for minimizing the number of packets to be caused when carrying out the push service, and a push service controller for maximizing QoE measures. In order to provide a seamless N-Screen service on diverse screens, such as smartphone, PC, and big screen, we also have Open API(Application Programming Interface) functions. Through these results, we expect to evaluate QoS and QoE quality in the seamless N-Screen service.

Vibration-to-Vibration Energy Transfer Between HF and DF in the Mixture (HF와 DF 혼합계내에서의 상호간 진동-진동 에너지 이동)

  • Chang Soon Lee;Yoo Hang Kim
    • Journal of the Korean Chemical Society
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    • v.28 no.1
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    • pp.26-33
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    • 1984
  • The rate constants for the following vibration-to-vibration energy exchange reactions have been calculated theoretically for the temperature range from 300 to 800K and for n = 2 to 5. HF(v=n) + DF(v=0) ${\to}$ HF(v=n-l) + DF(v=l) + ${\Delta}E$(a) DF(v=n) + HF(v=0) ${\to}$ DF(v=n-l) + HF(v=l) + ${\Delta}E$(b) In calculation the loosely-held, non-rigid dimer collision model and semiclassical method have been employed. The results show that the rate constants for the processes (a) are much greater than those for the processes (b). Also, it is found that the rate constants for the processes (a) increase with decreasing temperature and with increasing quantum number, while those for the processes (b) show the opposite tendencies. These findings are explained in terms of the sign and magnitude of the energy mismatch, ${\Delta}E$.

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HOM AND EXT FUNCTORS OF GENERALIZED INVERSE POLYNOMIAL MODULES

  • Han, Chang-Woo;Park, Sang-Won;Cho, Eun-Ha
    • East Asian mathematical journal
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    • v.16 no.1
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    • pp.111-123
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    • 2000
  • Northcott and McKerrow proved that if R is a left noetherian ring and E is an injective left R-module, then $E[x^{-1}]$ is an injective left R[xl-module. Park generalize Northcott and McKerrow's result so that if R is a left noetherian ring and E is an injective left R-module, then $E[x^{-S}]$ is an injective left $R[x^s]$-module, where S is a submonoid of N(N is the set of all natural numbers). In this paper we show $$Hom_{R[x^S]}(M[x^{-S}],\;N[x^{-S}]){\cong}Hom_R(M,\;N)[[x^S]]$$ and using the above result and this isomorphism, finally we show that $$Ext^i_{R[x^S]}(M[x^{-S}],\;N[x^{-S}]){\cong}Ext^i_R(M,\;N)[[x^S]]$$.

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SELF-ADJOINT INTERPOLATION FOR OPERATORS IN TRIDIAGONAL ALGEBRAS

  • Kang, Joo-Ho;Jo, Young-Soo
    • Bulletin of the Korean Mathematical Society
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    • v.39 no.3
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    • pp.423-430
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    • 2002
  • Given operators X and Y acting on a Hilbert space H, an interpolating operator is a bounded operator A such that AX = Y. An interpolating operator for n-operators satisfies the equation $AX_{}i$ = $Y_{i}$ for i/ = 1,2,…, n. In this article, we obtained the following : Let X = ($x_{i\sigma(i)}$ and Y = ($y_{ij}$ be operators in B(H) such that $X_{i\sigma(i)}\neq\;0$ for all i. Then the following statements are equivalent. (1) There exists an operator A in Alg L such that AX = Y, every E in L reduces A and A is a self-adjoint operator. (2) sup ${\frac{\parallel{\sum^n}_{i=1}E_iYf_i\parallel}{\parallel{\sum^n}_{i=1}E_iXf_i\parallel}n\;\epsilon\;N,E_i\;\epsilon\;L and f_i\;\epsilon\;H}$ < $\infty$ and $x_{i,\sigma(i)}y_{i,\sigma(i)}$ is real for all i = 1,2, ....

Unusual Non-magnetic Metallic State in Narrow Silicon Carbon Nanoribbons by Electron or Hole Doping

  • Lou, Ping;Lee, Jin-Yong
    • Bulletin of the Korean Chemical Society
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    • v.33 no.3
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    • pp.763-769
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    • 2012
  • We investigated the width (N) dependence on the magnetization of N-ZSiC NR with electron and hole doping on the basis of systematic DFT calculations. The critical values of the upper and down critical concentration to give the maximum and zero magnetic moment at edge Si/C atoms by electron/hole doping ($x_{up,e}$, $x_{down,e}$, $x_{up,h}$, and $x_{down,h}$) depend on the width of N-ZSiC NR. Moreover, due to $x_{up,e}\;{\neq}\;x_{up,h}$ and $x_{down,e}\;{\neq}\;x_{down,h}$, the electron and hole doping effect are asymmetry, i.e, the critical electron doping value ($x_{down,e}$) is smaller than the critical hole doping value ($x_{down,h}$) and is almost independent of the width of NZSiC NR though the other critical values of the electron and hole doping that influence the magnetization of N-ZSiC NR depend on the width. It was also found that at $x_{down,e}$ or $x_{down,h}$ doping, the N-ZSiC NR turns into unusual non-magnetic metallic state. The magnetic behavior was discussed based on the band structures and projected density of states (PDOS) under the effect of electron/hole doping.

A Study on the Improvement of e-Call Services Using V2N(Vehicle to Nomadic Device) Technology (V2N(Vehicle to Nomadic Device) 기술을 이용한 e-Call 서비스 개선에 관한 연구)

  • Choi, Su-min;Shin, Yong-tae
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2018.10a
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    • pp.321-324
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    • 2018
  • Recently, the evolution of V2X (Vehicle to Everything) technology is accelerating. In particular, it can be seen that C-V2X (Cellular V2X) technology and services combined with mobile telecommunication network are developing rapidly. However, in Korea, e-Call and emergency communication services are inferior to the developed communication technologies and the proportion of vehicles arriving at Golden Hour is considerably low. Therefore, this paper designed the communication architecture with C-V2X and Android operating systems, and presented ways to improve existing e-Call services using V2N (Vehicle to Nomadic Device) communication based on it.

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Reactions of Thianthrene Cation Radical Perchlorate with N-Arylbenzene- and N-Aryl-p-toluenesulfonamides. Synthesis of 5-(p-N-Arylbenzenesulfonamidephenyl)- and 5-(p-N-Aryl-p-toluenesulfonamidophenyl)thianthrenium Perchlorate (티안트렌 양이온 자유라디칼 과염소산염과 N-아릴벤젠술폰아미드 및 N-아릴-p-톨루엔술폰아미드의 반응. 5-(p-N-아릴술폰아미드페닐)티안트렌이움 과염소산염과 5-(p-N-아릴-p-톨루엔술폰아미드페닐)티안트렌이움 과염소산염의 합성)

  • Sung Hoon Kim;Kyongtae Kim
    • Journal of the Korean Chemical Society
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    • v.25 no.6
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    • pp.383-389
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    • 1981
  • Thianthrene cation radical perchlorate reacts with N-arylsulfonamides such as p-toluenesulfonanilide, benzenesulfonanilide, N-(2-methylphenyl)benzenesulfonamide, and N-phenyl-p-toluenesulfonanilide to give 5-(p-N-p-toluenesulfonamidophenyl)-(1a), 5-(p-N-benzenesulfonamidophenyl)-(1b), 5-(4-N-benzenesulfonamido-3-methylphenyl)-(1c), and 5-(p-N-phenyl-N-p-toluenesulfonamidophenyl thianthrenium perchlorate (1d), respectively. In the meantime, 1d reacts further with thiathrene cation ratical to form diperchlorate(1e). The structure of 1a~1e is very similar to 5-(p-acetamidophenyl) thianthrenium perchlorate which has been obtained from the reaction with acetanilide. However, the discrepancy in the stoichiometry between two reactions indicates that the reaction with sulfonamide appears not to proceed with a single mechanism.

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Low Temperature Preparation and Photocatalytic Activity of TiO{2-x}Nx (TiO{2-x}Nx의 저온제조 및 광화학적 특성)

  • Jung, Dong-Woon
    • Journal of the Korean Chemical Society
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    • v.54 no.1
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    • pp.120-124
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    • 2010
  • $TiO_2$ and N-substituted $TiO_{2-x}N_x$ were synthesized by using precipitation method. $TiO_{2-x}N_x$ compound absorbed whole UV light as well as long wavelength of visible light (400 - 700 nm) because of the change of band gap from 3.2 eV to 1.77 eV. Results obtained revealed that $TiO_{2-x}N_x$ showed higher activity than pure $TiO_2$ or P-25 for visible-photocatalytic degradation of 1,4-dichlorobenzene.

편광분석법을 이용한 GaN 유전율 함수의 온도 변화에 대한 연구

  • Park, Han-Gyeol;Kim, Tae-Jung;Hwang, Sun-Yong;Kim, Jun-Yeong;Kim, Yeong-Dong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.335-335
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    • 2012
  • III-V 족 반도체 물질 중, GaN는 넓은 밴드갭을 가지고 있어 발광 다이오드나 레이저 다이오드, 트랜지스터, 스핀트로닉스 등의 응용에 유용한 물질이다 [1]. 실시간 성장 제어 및 최적화된 특정 소자 응용을 위해서는 GaN의 다양한 온도에 대한 유전율 함수 정보가 필수적이다. 편광분석법을 이용한 상온에서의 hexagonal GaN 유전율 함수는 이미 여러 연구에서 보고되었고, 80~650 K 사이의 온도 범위에 대한 언구도 수행되었다 [2,3]. 그러나, 온도변화에 대한 GaN 유전율 함수와 $E_0$ 전이점에 대한 해석은 부정확하다. 따라서 본 연구에서는 사파이어 기판 위에 분자살박막증착장치를 이용하여 c-축 방향 (0001)으로 성장 시킨 hexagonal GaN를 0.74~6.42 eV 에너지 구간에서 보다 확장된 온도 영역(26~693 K)의 유전율 함수를 편광분석법을 이용하여 측정하였다. 측정된 GaN의 유전율 함수를 회기분석법을 통한 2차 미분 표준해석법을 이용해 분석 하였고, 그 결과 $E_0$와 excitonic $E_0$ 전이점을 명확히 얻을 수 있었다. 온도가 감소함에 따라 격자상수 및 전자-포논 상호작용이 감소하여 전자 전이점이 청색천이 하고, 그 구조가 명확해 지는 결과를 얻었다. 본 연구의 결과는 GaN 유전율 함수의 온도 의존성에 대한 데이터베이스를 제공함은 물론, 실시간 모니터링과 GaN를 기반으로 하는 광소자 제작 등에 유용할 것이다.

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SELF-ADJOINT INTERPOLATION PROBLEMS IN ALGL

  • Kang, Joo-Ho;Jo, Young-Soo
    • Journal of applied mathematics & informatics
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    • v.14 no.1_2
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    • pp.387-395
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    • 2004
  • Given operators X and Y acting on a Hilbert space H, an interpolating operator is a bounded operator A such that AX = Y. An interpolating operator for n-operators satisfies the equation $AX_{i}\;=\;Y_{i}$, for i = 1,2,...,n. In this article, we showed the following: Let H be a Hilbert space and let L be a subspace lattice on H. Let X and Y be operators acting on H. Assume that range(X) is dense in H. Then the following statements are equivalent: (1) There exists an operator A in AlgL such that AX = Y, $A^{*}$ = A and every E in L reduces A. (2) sup ${\frac{$\mid$$\mid${\sum_{i=1}}^n\;E_iYf_i$\mid$$\mid$}{$\mid$$\mid${\sum_{i=1}}^n\;E_iXf_i$\mid$$\mid$}$:n{\epsilon}N,f_i{\epsilon}H\;and\;E_i{\epsilon}L}\;<\;{\infty}$ and = for all E in L and all f, g in H.