• The Korean Journal of Ceramics
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• 제3권2호
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• pp.134-138
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• 1997

$Dy^{3+}-(or Tm^{3+}-)$ doped $Ga_2O_3 \;and\; ZnGa_2O_4$ phosphors were prepared using the solid state reaction method to investigate their photoluminescent characteristics. Under 254 nm excitation, $Dy^{3+}-doped Ga2_O_3$ exhibited two emission bands of 460~505nm and 570~600nm. On the other hand, $Dy^{3+}-(or Tm^{3+}-)$ doped $ZnGa_2O_4 $phosphors exhibited a broad-band emission extending from 330 nm to 610 nm, peaking at about 430 nm(or 370 nm). In this study, an emission peak shift of nealy 50 nm towards longer wavelength region was observed with $Dy^{3+}$ doping in the $ZnGa_2O_4 $.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.330-333
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• 2002

The stability against DC accelerated aging stress of $Dy_{2}O_{3}-doped$ $ZnO-Pr_{6}O_{11}-based$ varistor ceramics was investigated. The calculated nonlinear exponent$(\alpha)$ in varistor ceramics without $Dy_{2}O_{3}$ was only 4.9, whereas the $\alpha$ value of the varistors with $Dy_{2}O_{3}$ was abruptly increased in the range of 48.8 to 58.6. The varistor ceramics with $Dy_{2}O_{3}$ content of 1.0 mol% exhibited maximum ${\alpha}$, reaching 58.6, whereas they exhibited very poor stability. While, The varistor ceramics doped with 0.5 mol% $Dy_{2}O_{3}$ exhibited not only the high nonlinearity, which the ${\alpha}$ is 55.3 and the leakage current is $0.1{\mu}A$， but also the highest stability, which the variation rates of varistor voltage and nonlinear exponent are -0.8% and -14.3%, respectively, under DC accelerated aging stress, $0.95 V_{1mA}/150^{\circ}C/24h$.

• 한국결정성장학회지
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• 제26권5호
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• pp.193-200
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• 2016

고상반응법과 착체중합법 두 합성법에 의해 합성된 $SrAl_2O_4:Eu^{2+}$, $Dy^{3+}$ 축광성 형광체 분말의 특성을 비교 분석하였다. 열적 안정성을 평가하기 위해 산업 도자 제조공정에서 사용되는 열처리 조건($1250^{\circ}C$, 1시간 유지, LPG 환원분위기)을 적용하여 고상반응법과 착체중합법으로 합성된 $SrAl_2O_4:Eu^{2+}$, $Dy^{3+}$ 축광성 형광체 분말의 열처리 전후의 축광 특성변화를 관찰하였다. 두 합성법으로 합성된 분말과 고온 열처리 전후의 분말은 XRD 분석을 통해 결정구조 및 결정자 크기변화를 확인하였고, SEM과 PSA 분석을 이용하여 미세구조 및 입자 크기 변화를 관찰하였다. Spectrofluorometer 분석을 통해 $SrAl_2O_4:Eu^{2+}$, $Dy^{3+}$ 축광성 형광체의 여기 및 발광 특성, 장잔광 특성 변화를 확인하였다.

• 한국결정성장학회지
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• 제27권1호
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• pp.42-46
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• 2017

스컬용융법으로 $SrAl_2O_4$ : $Eu^{2+}$,$Dy^{3+}$ 형광체 합성을 하였으며, 합성한 형광체의 산화물 몰비는 $SrCO_3$ : $Al(OH)_3$ : $Eu_2O_3$ : $Dy_2O_3$= 1 : 2 : 0.015 : 0.02였다. 결정구조 및 표면 형상은 X-선 회절분석과 주사전자현미경으로 규명하였다. 합성한 $SrAl_2O_4$ : $Eu^{2+}$,$Dy^{3+}$의 광학적 특성인 여기, 발광 및 장잔광 특성의 심도 있는 연구를 위해 PL(photoluminescence) 분광계로 측정하였다. PL 측정을 통해 360 nm 영역에서 여기(excitation)되고, 300~420 nm의 파장까지 여기가 일어남을 확인하였다. 발광(emission)스펙트럼은 450~600 nm의 파장에서 폭넓은 스펙트럼을 보였으며, 530 nm에서 최대 발광파장을 나타내었다. $SrAl_2O_4$ : $Eu^{2+}$,$Dy^{3+}$ 형광체는 오랜 시간 동안 발광하는 장잔광 특성을 나타내었다.

• 한국재료학회지
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• 제8권11호
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• pp.999-1004
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• 1998

$SrAl_2O_4$:$Eu^{2+}, Dy^{3+}$ 축광성 형광체의 합성에 있어서 $B_2O_3$는 일반적으로 고상반응의 촉진을 위한 플럭스로서 첨가된다. 본 연구에서는 플럭스로 첨가되는 $B_2O_3$가 $SrAl_2O_4$:$Eu^{2+}, Dy^{3+}$ 형광체의 결정구조 및 잔광 특성에 미치는 영향을 조사하였다. 합성된 $SrAl_2O_4$:$Eu^{2+}, Dy^{3+}$ 형광체는 520nm에서 최대 피크를 갖는 폭넓은 발광 스펙트럼을 나타내었고, $B_2O_3$ 첨가량의 5wt%일 때 최대값을 나타내었다. $B_2O_3$의 첨가에 의해 $SrAl_2O_4$:$Eu^{2+}, Dy^{3+}$ 결정 내부에는 균일 변형(uniform strain)이 발생하였고 이 결과로 결정격자의 a축과 c축의 길이 및 $\beta$각이 감소하여다. 그리고 $SrAl_2O_4$ 결정내부의 균일 변형은 $Eu^{2+}$이온의 여기과정에서 발생하는 정공(hole)의 포획 사이트인 음이온 결함(negative defect)을 다량 발생시키는 원인이 되고, 결과적으로 $SrAl_2O_4$:$Eu^{2+}, Dy^{3+}$ 결정의 잔광 특성을 향상시키는 것으로 생각되었다.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1171-1172
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• 2006

Addition of 2.0wt%$Dy_2O_3$ or 0.3wt%Sn proved to be very effective in improving the permanent magnetic properties of NdFeNbB magnets. $Dy_2O_3$ additions result in the increase in the Hci and temperature dependence due to formation of (NdDy)-rich phase and grain refinement of $\Phi$ phase. This improvement of the coercivity stability of the magnets from the addition of Sn is attributed to the smoothing effect of the Sn addition at the grain boundaries. The magnetic properties, the temperature dependence and Curie temperature of NdFeNbB with $Dy_2O_3$ and Sn combined addition were found to be considerably improved.

• 한국세라믹학회지
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• 제40권11호
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• pp.1067-1072
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• 2003

Zn-Pr-Co-Cr-Dy 산화물계로 구성된 바리스터 세라믹스의 전기적 안정성을 몇 가지 DC 가속열화 스트레스 조건하에서 0.0∼2.0 mol% Dy$_2$O$_3$ 첨가량의 변화에 따라 조사하였다. 바리스터 세라믹스의 밀도는 Dy$_2$O$_3$ 첨가량이 0.5 mol%까지 증가하였으며, 보다 많이 첨가하면 감소하는 것으로 나타났다. 밀도는 전도경로와 밀접한 관계로 인해서 안정성에 큰 영향을 미치는 것으로 나타났다. Dy$_2$O$_3$ 첨가는 바리스터 세라믹스의 비직선 지수를 45 이상, 누설전류를 대략 1.0 $\mu$A 이하로 비직선성을 크게 개선시켰다. DC 스트레스 조건 0.95 V$_{1mA}$/15$0^{\circ}C$/24 h에서 안정성을 조사한 결과, 0.5 mol% 첨가시 상대적으로 가장 높은 안정성을 나타내었다. 전압-전류특성에 있어서 바리스터 전압, 비직선 지수, 누설전류의 변화율은 각각 -0.9%, -14.4%, +483.3%이었으며, 유전특성에 있어서 비유전율 및 손실계수의 변화는 각각 +7.1%, +315.4%이었다. 그 외의 바리스터 세라믹스는 낮은 밀도 때문에 열폭주 현상을 나타내는 매우 불안정한 특성을 나타내었다.다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1692-1695
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• 1999

The nonohmic characteristics of ZnO-$Pr_6O_{11}$-CoO-based ceramic varistor doped with $Dy_2O_3$ in the range $0.0\sim2.0mol%$ sintered at $1300^{\circ}C$ and $1350^{\circ}C$ were investigated. 98.5 ZnO-$0.5Pr_6O_{11}$-1.0CoO varistor sintered at $130^{\circ}C$ exhibited higher nonlinear coefficient of 36 than the established Pr-based varistor. The four-component-system varistor such as 96.5 ZnO-$0.5Pr_6O_{11}$-1.0CoO-$2.0Dy_2O_3$ exhibited very highly nonohmic characteristics, which has nonlinear coefficient of 53.9. 98.5ZnO-$0.5Pr_6O_{11}$-1.0CoO varistor sintered at $1350^{\circ}C$, in contrast with that of $1300^{\circ}C$, exhibited approximately ohmic characteristics but nonlinear coefficient of varistor doped with 0.5mol% $Dy_2O_3$ showed higher nonlinear coefficient of probably 35. Consequently, it can be confirmed that $Dy_2O_3$ acted as additive of improvement on nonlinear coefficient. It is estimated that $Dy_2O_3$ will be used as additive of improvement on nonlinear coefficient to develop a goof ZnO varistor.

• 센서학회지
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• 제18권1호
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• pp.48-53
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• 2009

$Eu^{2+}$-doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors have been synthesized by conventional solid state method. Photocurrent properties of $Eu^{2+}$ doped ${SrAl_2}{O_4}$ and $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors, in order to elucidate $Dy^{3+}$ co-doping effect, during and after ceasing ultraviolet-ray (UV) irradiation have been investigated. The photocurrent of $Eu^{2+}$, $Dy^{3+}$ co-doped ${SrAl_2}{O_4}$ phosphors during UV irradiation was 4-times lower than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ during UV irradiation, and 7-times higher than that of $Eu^{2+}$-doped ${SrAl_2}{O_4}$ after ceasing UV irradiation. The photocurrent results indicated that holes of charge carriers captured in hole trapping center during the UV irradiation and liberated after-glow process, and made clear that $Dy^{3+}$ of co-dopant acted as a hole trap. The photocurrent of ${SrAl_2}{O_4}$ showed a good proportional relationship to UV intensity in the range of $1{\sim}5mW/cm^2$, and $Eu^{2+}$-doped ${SrAl_2}{O_4}$ was confirmed to be a possible UV sensor.

• 한국재료학회지
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• 제20권7호
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• pp.364-369
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• 2010

A $SrAl_2O_4:Eu^{2+},Dy^{3+}$ phosphor powder with stuffed tridymite structure was synthesized by glycine-nitrate combustion method. The luminescence, formation process and microstructure of the phosphor powder were investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence spectroscopy (PL). The XRD patterns show that the as-synthesized $SrAl_2O_4:Eu^{2+},Dy^{3+}$ phosphor was an amorphous phase. However, a crystalline $SrAl_2O_4 $ phase was formed by calcining at $1200^{\circ}C$ for 4h. From the SEM analysis, also, it was found that the as-synthesized $SrAl_2O_4:Eu^{2+},Dy^{3+}$ phosphor was in irregular porous particles of about 50 ${\mu}m$, while the calcined phosphor was aggregated in spherical particles with radius of about 0.5 ${\mu}m$. The emission spectrum of as-synthesized $SrAl_2O_4:Eu^{2+},Dy^{3+}$ phosphor did not appear, due to the amorphous phase. However, the emission spectrum of the calcined phosphor was observed at 520 nm (2.384eV); it showed green emission peaking, in the range of 450~650 nm. The excitation spectrum of the $SrAl_2O_4:Eu^{2+},Dy^{3+}$ phosphor exhibits a maximum peak intensity at 360 nm (3.44eV) in the range of 250~480 nm. After the removal of the pulse Xe-lamp excitation (360 nm), also, the decay time for the emission spectrum was very slow, which shows the excellent longphosphorescent property of the phosphor, although the decay time decreased exponentially.