• 제목/요약/키워드: Dual process

검색결과 997건 처리시간 0.029초

동시 이중주파수 구동을 이용한 유도가열용 인버터 (Inverter for Induction Heating using Simultaneous Dual-Frequency Method)

  • 신우석;박희창
    • 전력전자학회논문지
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    • 제16권6호
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    • pp.554-560
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    • 2011
  • 단일 주파수로 유도가열에 의한 표면 경화 열처리 공정에서 생기는 설비의 이중 투자 문제 및 열처리 공정시간을 단축할 수 있도록 하기 위해 하나의 공정에서 두가지 공정을 동시에 처리할 수 있도록 해주는 동시 이중 주파수(Simultaneous dual frequency: SDF) 구동기법 기술에 대해 설명한다. 본 논문에서는 듀얼 방식의 인버터를 제안하여 이중 주파수(Dual frequency) 구동기법을 구현하였으며 시뮬레이션과 실험을 통해 제안된 인버터의 이중 주파수제어 및 전력제어를 검증하였다.

Dual-PDA를 이용한 절삭유 에어로졸 특성분석에 관한 연구(I) -선삭공정을 중심으로 (A Study on the Characteristics Analysis of Cutting Fluid Aerosol Using Dual-PDA System - for Turning Process)

  • 정진열;황덕철;홍기배;우창기;황준
    • 한국분무공학회지
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    • 제10권2호
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    • pp.10-17
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    • 2005
  • The proposed research has been performed to know the characteristics of cutting fluid aerosol formation using Dual-PDA system in machining process. The cutting fluid aerosol size and concentration is common attributes that quantify the environmental intrusiveness or air quality contamination. The atomized cutting fluid aerosols can be affected to human health risk such as lung cancer and skin irritations. Even though cutting fluid can be improved the machining quality and productivity in a carefully. its use must be controlled and optimized carefully. This experimental works using Dual-PDA were performed to analyze the cutting fluid aerosol behaviors and characteristics in turning process using precise aerosol particle measuring system. The obtained experimental results profovide basic knowledge to develop the environmentally conscious machining process. This results cail be provided as a basis to estimate and control the hazardous cutting fluid aerosol in machining process.

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복합 소독 공정을 이용한 E. coli 불활성화 (E. coli Inactivation using Complex Disinfection Process)

  • 김동석;박영식
    • KSBB Journal
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    • 제25권1호
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    • pp.33-40
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    • 2010
  • Conventional disinfectants and disinfection method are expensive, hazardous and often require long periods of exposure. Recently, there is growing interest in complex disinfection process as a disinfection technique in medical instruments such as endoscope, hand piece bur to improve the disinfection efficiency and conveniency. The aim of this study was to evaluate the performance of a new complex process for the purpose of disinfection of Escherichia coli in water. Three single process (electrolysis, UV and ultrasonic process) was combined dual and triple disinfection process. The order of disinfection performance for E. coli in dual process lie in: Electrolysis + UV > Electrolysis + Ultrasonic > UV + Ultrasonic process. Disinfection efficiency of E. coli and degradation of N, N-Dimethyl-4-nitrosoaniline (RNO, indicating material of OH radical formation) of dual process was higher than that of the triple process (Electrolysis + UV + Ultrasonic process). In electrolysis + UV process, disinfection tendency was well agreed with RNO degradation tendency.

실리콘 액정표시 장치 시스템을 위한 00.5μm 이중 게이트 고전압 CMOS 공정 연구 (A Study on the 0.5μm Dual Gate High Voltage CMOS Process for Si Liquid Display System)

  • 송한정
    • 한국전기전자재료학회논문지
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    • 제15권12호
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    • pp.1021-1026
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    • 2002
  • As the development of semiconductor process technology continue to advance, ICs continue their trend toward higher performance low power system-on-chip (SOC). These circuits require on board multi power supply. In this paper, a 0.5 ㎛ dual date oxide CMOS Process technology for multi-power application is demonstrated. 5 V and 20 V devices fabricated by proposed process is measured. From 5 V devices using dual gate precess, we got almost the same characteristics as are obtained from standard 5 V devices. And the characteristics of the 20 V device demonstrates that 3 ㎛ devices with minimum gate length are available without reliability degradation. Electrical parameters in minimum 3 ㎛ devices are 520 ㎂/㎛ current density, 120 ㎷ DIBL, 24 V BV for NMOS and ,350 ㎂/㎛ current density, 180 ㎷ DIBL, 26 V BV for PMOS, respectively.

이중구조를 갖는 제어시스템의 구현과 신뢰도 분석에 관한 연구 (A Study on the Implementation of a Control System with Dual Structure and Its Reliability Analysis)

  • 박세화;문봉채;김병국
    • 대한전자공학회논문지
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    • 제27권9호
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    • pp.1351-1363
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    • 1990
  • In this paper, a reliable control system structured with dual CPU modules and dual I/O modules is implemented as a means of achieving a highly reliable fault tolerant control system. For this, faults in the system modules are first examined, and a fault detection technique consisting of self diagnostic, comparison process, and exception processing is applied. Self diagnostic is used to locate which components in the modules have been failed, while comparison process is to cmpare control outputs computed by both CPU modules and protect the plant from malfunction by blocking failed control outputsin advance. Finally exception processing is used to determine the faults that are not detected immediately by the self diagnostic and comparison process, e.g. bus error processing when acknowledge signal for data transfer is not activeted in the I/O modules. Also reliability analysis is conducted for the discrete time Markov model with dual structure. It is shown quantitatively that the reliability is improved in the control system with dual structure in comparison with a system with single module structure.

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Dual-PDA를 이용한 절삭유 에어로졸 특성분석에 관한 연구(II) - 선삭공정의 절삭유 에어로졸 예측 (A Study on the Characteristics Analysis of Cutting Fluid Aerosol Using Dual-PDA System(II) - for Cutting Fluid Aerosol Prediction in Turning Process)

  • 정의식;황덕철;우창기;황준
    • 한국분무공학회지
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    • 제10권2호
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    • pp.32-40
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    • 2005
  • This paper presents the analytical approaches to predict cutting fluid aerosol formation characteristics in machining process. The prediction model which is based on the rotary atomization theory analyzes aerosol behaviors in terms of size and concentration. Experiments were tarried out to verify the aerosol formation prediction model under various operational conditions. The experimental results which are obtained by Dual-PDA measurement show resonable agreement with prediction results of aerosol concentration. This study can be provided as a basis to estimate and control the hazardous cutting fluid aerosol in machining process in view of environmental consciousness.

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Cu Dual Damascene 배선 공정에서의 DCV 배선구조의 EM 특성 연구 (Electromigration Characteristics Stduy DCV Interconnect Structures in Cu Dual-Damascene Process)

  • 이현기;최민호;김남훈;김상용;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.123-124
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    • 2005
  • We investigated the effect of a Ta/TaN Cu diffusion barrier existence on the reliability and the electrical performance of Cu dual-damascene interconnects. A high EM performance in Cu dual-damascene structure was observed the BCV(barrier contact via) interconnect structure to remain Ta/TaN barrier layer. Via resistance was decreased DCV interconnect structure by bottomless process. This structure considers that DCV interconnect structure has lower activation energy and higher current density than BCV interconnect structure. The EM failures by BCV via structure were formed at via hole, but DCV via structure was formed EM fail at the D2 line. In order to improve the EM characteristic of DCV interconnect structure by bottomless process, after Ta/TaN diffusion barrier layer in via bottom is removed by Ar+ resputtering process, it is desirable that Ta thickness is thickly made by Ta flash process.

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Dual Pickup 대물렌즈의 생산을 위한 주요 Parameter 및 특성에 관한 연구 (A Study on Key Parameters and Characteristics in the Manufacturing Process of the Dual Pickup Objective Lens)

  • 우선희;이동주
    • 한국공작기계학회논문집
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    • 제16권3호
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    • pp.117-124
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    • 2007
  • In order to operate CD and DVD compatibly in a pickup system, the objective lens comprise diffractive optical element(DOE) zone and aspheric curvature on its lens surface. The DOE objective lens is effective to simplify this dual-purpose pickup system of the 655nm and 785nm wavelength by using only one lens, but requires more precision manufacturing process and system due to the complicated shape. This paper presents the overall manufacturing process of this objective lens and describes main parameters in each process, for the correction of the aspheric surface in its core, the shrinkage compensation after injection molding, and the uniformity compensation by adjusting molding conditions.

영상처리기법을 이용한 소화기 조준감사 자동화에 관한 연구 (A Study on the Bore-Sighting Automation for Small Arms Using the Image Processing)

  • 여운주
    • 한국군사과학기술학회지
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    • 제9권3호
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    • pp.5-11
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    • 2006
  • This paper is launched to get an exact bore-sighting value in the process of assembling for a dual-barrel weapon. Image processing method with a CCD(Charged Coupled Device) camera is chosen for the error reduction of bore-sighting. The results of this method by using a CCD camera and the testing target method are described in this paper. After the performance of the dual-barrel weapon and that of the fire-control system in the dual barrel weapon system is confirmed, the bore-sighting which is a part of the process in the system assembly is accomplished. In this process, the position of the barrel is identified by using the testing target method that is an existing bore-sighting method. Then, the fixing line of the fire-control system is checked by a day-optical part. The precision of the bore-sighting is required within several mils, however the manual method using the naked eyes makes it worse. Therefore, a CCD camera is installed in the eyepieces. Next, we can get an image of the sighting and the center coordinate values of the laser-pointer from each barrel by image processing method. A required bore-sighting value is calculated from the eccentricity of the center coordinate. Finally, It can be applied to adopt this result in the assembling process of the dual-barrel weapon.

Dual Gate Oxide 공정에서 Gate Oxide Thinning 방지에 대한 고찰 (Preventing a Gate Oxide Thinning in C-MOS process Using a Dual Gate Oxide)

  • 김성환;김재욱;성만영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.223-226
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    • 2003
  • We propose an improvement method for a $\underline{G}ate$ $\underline{OX}ide(GOX)$ thinning at the edge of $\underline{S}hallow$ $\underline{T}rench$ $\underline{I}solation(STI)$, when STI is adopted to Dual Gate Oxide(DGOX) Process. In the case of SOC(System On-a-Chip), the DGOX process is usually used for realizing both a low and a high voltage parts in one chip. However, it is found that the severe GOX thinning occurs from at STI top edge region and a dent profile exists at the top edge of STI, when conventional DGOX and STI process carried out in high density device chip. In order to overcome this problem, a new DGOX process is tried in this study. And we are able to prevent the GOX thinning by H2 anneal, partially SiN liner skip, and a method which is merged a thick sidewall oxide(S/O) with a SiN pull-back process. Therefore, a good subthreshold characteristics without a double hump is obtained by the prevention of a GOX thinning and a deep dent profile.

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