• 한국항만학회지
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• 제14권3호
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• pp.353-360
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• 2000

In this study a drift prediction model based on fluid dynamics theory is introduced. The essential effects of environmental loads and target characteristics are taken into account from a fluid dynamics point of view. The governing equations of motion are derived from Netwon's law of dynamics. In the mathematical formulation only three degrees of freedom(surge, sway, yaw) of the drifting object are assumed and the environmental loads considered are the forces and moments by wind and current. A computer algorithm for this model is implemented to obtain the numerical result in the time domain. The preliminary tests for model verification are conducted and the results are compared with the field experiment data as well as leeway formula suggested from the field test data.

• 전력전자학회논문지
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• 제3권2호
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• pp.125-130
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• 1998

본 논문에서는 유도전동기 자속기준제어에 필요한 회전자 자속각 연산을 위한 새로운 자속 연산기를 제시한다. 순수 적분기로 구성된 자속연산기를 사용하여 전압, 전류 정보로부터 실제 회전자 자속을 추정하였다. 제안된 자속 연산기에서는 순수 적분기의 드리프트(drift) 문제를 해결하기 위한 새로운 보상 방법을 도입하였으며, 전동기 속도는 추정된 자속각과 추정된 슬립 주파수로부터 연산하였다. 제안된 방법의 성능을 실험을 통하여 입증하였다. 제안된 시스템의 정경속도의 1/100 이하에서도 안정되게 운전되는 것을 실험결과로부터 확인하였다.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.63-71
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• 2000

In this study a drift prediction model based on fluid dynamics theory is introduced. The essential effects of environmental loads and target characteristics are taken into account from a fluid dynamics point of view. The governing equations of motion are derived from Newton's law of dynamics. In the mathematical formulation only three degrees of freedom(surge, sway, yaw) of the drifting object are assumed and the environmental loads considered are the forces and moments by wind and current. A computer algorithm for this model is implemented to obtain the numerical result in the time domain. The preliminary tests for model verification are conducted and the results are compared with the field experiment data as well as leeway formula suggested from the field test data.

• 한국태양에너지학회 논문집
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• 제29권6호
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• pp.75-80
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• 2009

Recently, as the grid-connected photovoltaic power conditioning systems (PVPCS) are installed in many residential areas, these have raised potential problems of network protection on electrical power system. One of the numerous problems is an Islanding phenomenon. In this paper, active frequency drift (AFD) method, one of the anti-islanding methods which is analyzed by current magnitude compensation and calculation of RMS value of the output power is proposed and verified by simulation.

• 대한전자공학회논문지
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• 제27권1호
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• pp.46-50
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• 1990

Heteroface AlGaAs/GaAs drift solar cells with an active area conversion efficiency of 15.9% under one sun and AM 1.5 condition have been grown by molecular beam epitaxy(MBE). These drift solar cells have graded doping profiles in the base and emitter regions. The cells have a short circuit current density (Jsc) of 19.00 mA/cm\ulcorner an open circuit voltage(Voc) of 0.93 V, and f fill factor(FF) of 0.78, respectively. Conventional solar cells with fixed doping profiles were also grown by MBE for comparison with the drift solar cells. Even though the fabrication cost of MBE grown solar cell is higher, the expected highest conversion efficiency of the single or multiple cells could compensate for the increased cost, particularly in case of space applications.

• 전기의세계
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• 제18권5호
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• pp.12-19
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• 1969

The sensitivity of transistorized d.c. amplifiers is mainly limited by drift at operating point caused by ambient temperature changes. A chopper-type transistorized amplifier is necessary to obtain a high sensitivity without recourse to drift compensation which requires the adjustment of several balancing controls. A chopper-stabilized system consisting of an electro-mechanical chopper for input and output and a high-gain a.c. amplifier is designed and analyzed. The gain of the a.c. amplifier, expressed as the ratio of voltages, is larger than 80db in the band of 50C/S - 100KC/S. The complete system gives an open-loop gain of 68db at direct current. The offset voltage is 20.mu.V referred in input and the voltage drift at the input is less than 10.mu.V/hr at 25.deg.C. This type of amplifier would be useful for the high-gain transistorized d.c. amplifier for analog computers. Also, due to the high input impedance, it is suitable for amplification of signals from wide range of source impedances.

• 천문학회보
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• 제46권2호
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• pp.56.4-57
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• 2021

The low surface brightness (LSB) universe has been largely unexplored. The LSB structures are extremely difficult to image due to systematic errors of sky subtraction and scattered light in he atmosphere and in the telescope. Among the systematic errors of sky subtraction, the widespread presence of Galactic cirrus clouds is one of the major obstacles in studying the LSB features of extragalactic sources. Interstellar dust clouds are also fundamental to understand many issues in the Milky Way. Therefore, understanding the Galactic cirri is a crucial topic in the LSB studies. We present the ubiquitousness and current understanding of the Galactic cirri. We also discuss what is necessary to study the LSB features with K-DRIFT and what we can learn from the K-DRIFT observations.

• 한국항해항만학회지
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• 제26권2호
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• pp.221-226
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• 2002

표류지점 추정 모델의 환경 입력자료를 확보하기 위해 부산항 연근해에서 표류실험을 실시하였다. 실험에는 크기가 다른 4척의 선박(10, 20, 50, 90톤급)이 사용되었다. 그중 50톤급 선박에는 해류, 바람, 위치를 자동적으로 기록하는 계기들을 장착하였고, 나머지 선박들에서는 분산각 추정 연구를 위해 위치자료만 기록하였다. 각 선박들의 위치는 DGPS와 자동위치발신기(APRS)를 사용하여 기록하였다. 실험은 풍속 2~10m/s, 유속 0.5~1.5m/s의 환경에서 행하여졌으며, leeway는 선박 표류속도에서 표층의 유속성분을 제거하여 구하였다. 50톤급 선박의 leeway rate는 풍속의 약 3.6%인 것으로 분석되었으며, leeway 방정식은 $U_L$ =0.042W -0.034로 표현되었고 leeway angle은 $-30^{\circ}$~$40^{\circ}$의 범위였다.

• 수산해양기술연구
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• 제60권1호
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• pp.57-70
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• 2024

In order to present a predictive drift model, Jeju National University's training ship was tested for about 11 hours and 40 minutes, and 81 samples that selected one of the entire samples at ten-minute intervals were subjected to regression analysis after verifying outliers and influence points. In the outlier and influence point analysis, although there is a part where the wind direction exceeds 1 in the DFBETAS (difference in Betas) value, the CV (cumulative variable) value is 6%, close to 1. Therefore, it was judged that there would be no problem in conducting multiple regression analyses on samples. The standard regression coefficient showed how much current and wind affect the dependent variable. It showed that current speed and direction were the most important variables for drift speed and direction, with values of 47.1% and 58.1%, respectively. The analysis showed that the statistical values indicated the fit of the model at the significance level of 0.05 for multiple regression analysis. The multiple correlation coefficients indicating the degree of influence on the dependent variable were 83.2% and 89.0%, respectively. The determination of coefficients were 69.3% and 79.3%, and the adjusted determination of coefficients were 67.6% and 78.3%, respectively. In this study, a more quantitative prediction model will be presented because it is performed after identifying outliers and influence points of sample data before multiple regression analysis. Therefore, many studies will be active in the future by combining them.

• 한국전기전자재료학회논문지
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• 제23권10호
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• pp.767-770
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• 2010

In this work, we investigated the static characteristics of 4H-SiC vertical metal-oxidesemiconductor field effect transistors (VMOSFETs) by adjusting the doping level of n-epilayer and the effect of a current spreading layer (CSL), which was inserted below the p-base region with highly doped n+ state ($5{\times}10^{17}cm^{-3}$). The structure of SiC VMOSFET was designed by using a 2-dimensional device simulator (ATLAS, Silvaco Inc.). By varying the n-epilayer doping concentration from $1{\times}10^{16}cm^{-3}$ to $1{\times}10^{17}cm^{-3}$, we investigated the static characteristics of SiC VMOSFETs such as blocking voltages and on-resistances. We found that CSL helps distribute the electron flow more uniformly, minimizing current crowding at the top of the drift region and reducing the drift layer resistance. For that reason, silicon carbide VMOSFET structures of highly intensified blocking voltages with good figures of merit can be achieved by adjusting CSL and doping level of n-epilayer.