• Title/Summary/Keyword: Drag coefficients

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Precise Orbit Determination of LEO Satellite Using Dual-Frequency GPS Data (이중 주파수 GPS 데이터를 이용한 저궤도 위성의 정밀궤도결정)

  • Hwang, Yoo-La;Lee, Byoung-Sun;Kim, Jae-Hoon;Yoon, Jae-Cheol
    • Journal of Astronomy and Space Sciences
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    • v.26 no.2
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    • pp.229-236
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    • 2009
  • KOorea Multi-purpose SATellite(KOMPSAT)-5 will be launched at 550km altitude in 2010. Accurate satellite position(20 cm) and velocity(0.03 cm/s) are required to treat highly precise Synthetic Aperture Radar(SAR) image processing. Ionosphere delay was eliminated using dual frequency GPS data and double differenced GPS measurement removed common clock errors of both GPS satellites and receiver. SAC-C carrier phase data with 0.1 Hz sampling rate was used to achieve precise orbit determination(POD) with ETRI GNSS Precise Orbit Determination(EGPOD) software, which was developed by ETRI. Dynamic model approach was used and satellite's position, velocity, and the coefficients of solar radiation pressure and drag were adjusted once per arc using Batch Least Square Estimator(BLSE) filter. Empirical accelerations for sinusoidal radial, along-track, and cross track terms were also estimated once per revolution for unmodeled dynamics. Additionally piece-wise constant acceleration for cross-track direction was estimated once per arc. The performance of POD was validated by comparing with JPL's Precise Orbit Ephemeris(POE).

The Effect of Stacking Fault on Thermoelectric Property for n-type SiC Semiconductor (N형 SiC 반도체의 열전 물성에 미치는 적층 결함의 영향)

  • Pai, Chul-Hoon
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.22 no.3
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    • pp.13-19
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    • 2021
  • This study examined the effects of stacking faults on the thermoelectric properties for n-type SiC semiconductors. Porous SiC semiconductors with 30~42 % porosity were fabricated by the heat treatment of pressed ��-SiC powder compacts at 1600~2100 ℃ for 20~120 min in an N2 atmosphere. XRD was performed to examine the stacking faults, lattice strain, and precise lattice parameters of the specimens. The porosity and surface area were analyzed, and SEM, TEM, and HRTEM were carried out to examine the microstructure. The electrical conductivity and the Seebeck coefficient were measured at 550~900 ℃ in an Ar atmosphere. The electrical conductivity increased with increasing heat treatment temperature and time, which might be due to an increase in carrier concentration and improvement in grain-to-grain connectivity. The Seebeck coefficients were negative due to nitrogen behaving as a donor, and their absolute values also increased with increasing heat treatment temperature and time. This might be due to a decrease in stacking fault density, i.e., a decrease in stacking fault density accompanied by grain growth and crystallite growth must have increased the phonon mean free path, enhancing the phonon-drag effect, leading to a larger Seebeck coefficient.