• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.186-191
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• 2006

Ferromagnetic amorphous $Ni_{16}Fe_{62}Si_8B_{14}$ and $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$ layers have been devised and incorporated as free layers of magnetic tunnel junctions (MTJs) to improve MRAM reading and writing performance. The NiFeSiB and CoFeSiB single-layer film exhibited a lower saturation magnetization ($Ms=800emu/cm^3,\;and\;560emu/cm^3$, respectively) compared to that of a $Co_{90}Fe_{10}(Ms=1400emu/cm^3)$. Because amorphous ferromagnetic materials have lower Ms than crystalline ones, the MTJs incorporating amorphous ferromagnetic materials offer lower switching field ($H_{sw}$) values than that of the traditional CoFe-based MTJ. The double-barrier MTJ with an amorphous NiFeSiB free layer offered smooth surface resulting in low bias voltage dependence, and high $V_h\;and\;V_{bd}$ compared with the values of the traditional CoFe-based MTJ.

• Journal of Life Science
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• v.19 no.8
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• pp.1062-1066
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• 2009

N-Acetylglucosamine kinase (GlcNAc kinase or NAGK; EC 2.7.1.59) catalyzes the phosphorylation of GlcNAc to GlcNAc-6-phosphate (GlcNAc-6-P). Despite detailed characterization of the enzyme itself, there have been few studies on the expression of NAGK in mammalian tissues. In the rat hippocampal neuron in culture, NAGK-immunoreactivity (IR) formed clusters in somatodendritic domains. In this study we characterized the NAGK clusters that protrude out the long axis of dendritic shafts. By double-labeling of the neurons with antibodies against NAGK and various synaptic proteins, we show that NAGK is positioned at the base of spines, while there were no NAGK protrusions into inhibitory postsynaptic sites. Immunoblot analysis showed that NAGK was included in synaptosomes but not in PSD fractions. Our results indicate that the NAGK clusters at the dendritic periphery protrude into spines.

• Journal of Microbiology and Biotechnology
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• v.25 no.4
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• pp.459-463
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• 2015

This study evaluated the microbial conversion of coconut oil waste, a major agro-residue in tropical countries, into single cell oil (SCO) feedstock for biodiesel production. Copra cake was used as a low-cost renewable substrate without any prior chemical or enzymatic pretreatment for submerged growth of an oleaginous tropical mangrove fungus, Aspergillus terreus IBB M1. The SCO extracted from fermented biomass was converted into fatty acid methyl esters (FAMEs) by transesterification and evaluated on the basis of fatty acid profiles and key fuel properties for biodiesel. The fungus produced a biomass (8.2 g/l) yielding 257 mg/g copra cake SCO with ~98% FAMEs. The FAMEs were mainly composed of saturated methyl esters (61.2%) of medium-chain fatty acids (C12-C18) with methyl oleate (C18:1; 16.57%) and methyl linoleate (C18:2; 19.97%) making up the unsaturated content. A higher content of both saturated FAMEs and methyl oleate along with the absence of polyunsaturated FAMEs with ≥4 double bonds is expected to impart good fuel quality. This was evident from the predicted and experimentally determined key fuel properties of FAMEs (density, kinematic viscosity, iodine value, acid number, cetane number), which were in accordance with the international (ASTM D6751, EN 14214) and national (IS 15607) biodiesel standards, suggesting their suitability as a biodiesel fuel. The low cost, renewable nature, and easy availability of copra cake, its conversion into SCO without any thermochemical pretreatment, and pelleted fungal growth facilitating easier downstream processing by simple filtration make this process cost effective and environmentally favorable.

• Journal of the Korean Chemical Society
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• v.44 no.6
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• pp.573-580
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• 2000

MPT, which has been developed recently, is very tolerant to aqueous samples. Several types of MPT have been investigated and is found that the double concentric tube could sustain a stable plasma at a low plasma gas flow rate. However, the tip of torch is easily ruined. Triple concentric torch has shown the best stability and the plasma shape, much like that of ICP, especially when the central channel is quartz. The plasma is exposed and mixed with air as is suggested from the background spectrum, which leads to quenching of He MPT. Sensitivity of helium MPT equipped with a membrane desolvator has shown 10 times lower than that of Argon MPT for most of elements except for the ones with relatively high excitation energy. He MPT requires small plasma flow rate (about 1.6 L/min), stable and simple to use. Excitational temperature and electron number density measured are 4950 K and 3.28 ${\times}$ $10^{14}cm^{-3}$, respectively.

• Bulletin of the Korean Chemical Society
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• v.31 no.6
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• pp.1704-1710
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• 2010

The structure of a 2D grid-like copper(II) complex [Cu$(NCO)_2$(pyz)](pyz=pyrazine) (1) consists of 1D chains of Cu-pyz units connected by double end-on (EO) cyanato bridges. Each Cu(II) ion has a distorted octahedral coordination, completed by the four EO cyanato and two pyrazine ligands. Magnetic interactions through EO cyanato and pyrazine bridges in 1 are discussed on the basis of DFT broken-symmetry calculations at the B3LYP level. For model dicopper(II) complexes I (bridged by cyanato) and II (bridged by pyrazine), electronic structure calculations reproduce very well the experimental couplings for the S = 1/2 ferromagnetic and antiferromagnetic exchange-coupled 2D system: the calculated exchange parameters J are +1.25 $cm^{-1}$ and -3.07 $cm^{-1}$ for I and II, respectively. The $\sigma$ orbital interactions between the Cu $x^2-y^2$ magnetic orbitals and the nitrogen lone-pair orbitals of pyrazine are analyzed from the viewpoint of through-bond interaction. The energy splitting of 0.106 eV between two SOMOs indicates that the superexchange interaction should be antiferromagnetic in II. On the other hand, there are no bridging orbitals that efficiently connect the two copper(II) magnetic orbitals in I because the HOMOs of the basal-apical NCO bridge do not play a role in the formation of overlap interaction pathway. The energy separation in the pair of SOMOs of I is calculated to be very small (0.054 eV). This result is consistent with the occurrence of weakly ferromagnetic properties in I.

• Bulletin of the Society of Naval Architects of Korea
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• v.27 no.4
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• pp.32-42
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• 1990

The method using Rankine Soure distribution over the hull surface and undisturbed free surface was applied to calculate the free surface flow around a ship. The ship hull as well as a local portion of the undisturbed free surface arc geometrically represented by quadrilateral panels and the source density is determined so as to satisfy the linearized free surface condition based on the double model flow. The pressure distribution, wave resistance, wave profile and hydrodynamic sinkage force and trim moment for the Wigley hull and the Series 60 hull with $C_B=0.60$ were calculated in the fixed condition. The calculated results were compared with the measured values. The dependance of the solution on the panel arrangement, particularly on the free suraface, was also studied through 11 numerical test cases for the Wigley hull.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.6
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• pp.274-284
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• 2001

A stoichimetric mixture of evaporating materials for $AgInS_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $AgInS_2$mixed crystal was deposited on thorughly etched semi-insulating GaAs(100) substrate by the Hot wall Epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $AgInS_2$ single crystal the films measured from Hall effect by van der Pauw method are $9.35\times 10^{16}/\terxtm{cm}^3$ and $294\terxtm{cm}^2$/V.s at 293 K, respectively. From the optical absorption measurement the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin film was found to be $E_g$(T)= 2.1365eV-($9.89\times 10^{-3}eV/T^2$/(2930+T). After the as-grown $AgInS_2$ single crystal thin films was annealed in $Ag^-S^-$ and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal the films has been investigated by using the photoluminescence(PL) at 10K. The native defects of $V_{Ag},V_s, Ag_{int}$ and $S_{int}$ int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $AgInS_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in $AgInS_2$ /GaAs did not form the native defects because In is $AgInS_2$ single crystal thin films did exist in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.99-99
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• 2008

To grow the large diameter GaN with high structure and optical quality has been obtained by hydride vapor phase epitaxy(HVPE) method. In addition to the nitridation of $Al_2O_3$ substrate, we also developed a "step-growth process" to reduce or to eliminate the bowing of the GaN substrate caused by thermal mismatch during cool down after growth. The as-grown 380um thickness and 75mm diameter GaN layer was separated from the sapphire substrate by laser-induced lift-off process at $600^{\circ}C$. A problem with the free-standing wafer is the typically large bowing of such a wafer, due to the built in the defect concentration near GaN-sapphire interface. A polished G-surface of the GaN substrate were characterized by room temperature Double crystal X-ray diffraction (DCXRD), photoluminescence(PL) measurement, giving rise to the full-width at half maximum(FWHM) of the rocking curve of about 107 arcsec and dislocation density of $6.2\times10^6/cm^2$.

• Bulletin of the Korean Chemical Society
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• v.33 no.12
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• pp.4161-4164
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• 2012

Density functional MO calculations for the methylsilole anion of $[C_4H_4SiMe]^-$ and methylgermole anion of $[C_4H_4SiMe]^-$ at the B3LYP (full)/6-311+$G^*$ level (GAUSSIAN 94) were carried out and characterized by frequency analysis. The ground state structure for the methylsilole anion and methylgermole anion is that the methyl group is pyramidalized with highly localized structure. The difference between the calculated $C_{\alpha}-C_{\beta}$ and $C_{\beta}-C_{\beta}$ distances are 9.4 and 11.5 pm, respectively. The E-Me vector forms an angle of $67.9^{\circ}$ and $78.2^{\circ}$ with the $C_4E$ plane, respectively. The optimized structures of the saddle point state for the methylsilole anion and methylgermole anion have been also found as a planar with highly delocalized structure. The optimized $C_{\alpha}-C_{\beta}$ and $C_{\beta}-C_{\beta}$ distances are nearly equal for both cases. The methyl group is located in the plane of $C_4E$ ring and the angle between the E-Me vector and the $C_4E$ plane for the methylsilole anion and methylgermole anion is $2.0^{\circ}$ and $2.3^{\circ}$, respectively. The energy difference between the ground state structure and the transition state structure is only 5.1 kcal $mol^{-1}$ for the methylsilole anion. However, the energy difference of the methylgermole anion is 14.9 kcal $mol^{-1}$, which is much higher than that for the corresponding methylsilole monoanion by 9.8 kcal $mol^{-1}$. Based on MO calculations, we suggest that the head-to-tail dimer compound, 4, result from [2+2] cycloaddition of silicon-carbon double bond character in the highly delocalized transition state of 1. However, the inversion barrier for the methylgermole anion is too high to dimerize.

• Korean Journal of Crystallography
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• v.9 no.1
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• pp.53-63
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• 1998

The Cd1-xZnxS thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). the source and substrate temperature are 600℃ and 440℃, respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction (DCXD). Hall effect on the sample was measured by the van der Pauw method and the carrier density and mobility dependence of Hall characteristics on temperature was also studied. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (γ), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that the best photoconductive characteristic were observed in the Cd0.53Zn0.47S samples annealed in Cu vapor comparing with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.65 × 107, the MAPD of 338mW, and the rise and decay time of 9.7 ms and 9.3 ms, respectively.