• Title/Summary/Keyword: Double-barrier technique

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The double-barrier technique using platelet-rich fibrin for closure of oroantral fistulas

  • Jae-Woong Jung;Sung ok Hong;Eun-Jee Lee;Ra-Yeon Kim;Yu-Jin Jee
    • Journal of the Korean Association of Oral and Maxillofacial Surgeons
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    • v.49 no.3
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    • pp.163-168
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    • 2023
  • An oroantral fistula (OAF) or oroantral communication (OAC) is an opening between the oral cavity and the maxillary sinus. If left untreated, these openings may cause chronic maxillary sinusitis. Although small defects (diameter <5 mm) may close spontaneously, larger communications require surgical intervention. Various studies have been conducted on OAC closure using a platelet-rich fibrin (PRF) membrane; most of these prior studies have involved simple direct application of PRF clots. This study introduces a new "double-barrier technique" using PRF for closure of an OAF involving sinus mucosal lifting and closure. The PRF material is inserted into the prepared maxillary sinus space, and the buccal advancement flap covers the oral side. This technique was successfully used to treat two patients with chronic OAF in the posterior maxillary region after implant removal or tooth extraction. The use of a PRF membrane in a double-barrier technique may have advantages in soft-tissue healing and could enable easy closure of chronic OAF with minimal trauma.

SUTURE TECHNIQUE FOR SUCCESSFUL GUIDED BONE REGENERATION ; PRELIMINARY REPORT OF DOUBLE LAYERED SUTURE TECHNIQUE WITH SUBGINGIVAL SUTURE (성공적인 골유도재생술을 위한 봉합술 : 점막하 봉합법을 이용한 이중 봉합술의 예비 보고)

  • Kim, Young-Bin;Cho, Sung-Dae;Leem, Dae-Ho
    • Maxillofacial Plastic and Reconstructive Surgery
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    • v.31 no.1
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    • pp.86-91
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    • 2009
  • The success of implants essentially depends on a sufficient volume of healthy bone at the recipient site during implant placement. In patients who have the severe alveolar bone resorption or pneumatized maxillary sinus, it should be performed that bone regeneration procedure before implant placement. Development of barrier membrane makes it possible that predictable result of alveolar bone reconstruction. Many kind of materials used for barrier membrane technique are introduced, non-absorbable or absorbable membranes. But, when operation site was ruptured with membrane exposure, bacterias can be grow up at the bone graft site. Then morphology and migration of fibroblast will be changed. It works as a negative factor on healing process of bone graft site. In oral and maxillofacial department of Chonbuk national university dental hospital, we use variable suture technique like as subgingival suture, vertical mattress suture, simple interrupted suture, if need, tenting suture after GBR or block bone graft. Within these suture technique, wound healing was excellent without complication, so now we take a report of suture technique in reconstruction of alveolar bone surgery.

4H-SiC Schottky Barrier Diode Using Double-Field-Plate Technique (이중 필드플레이트 기술을 이용한 4H-SiC 쇼트키 장벽 다이오드)

  • Kim, Taewan;Sim, Seulgi;Cho, Dooyoung;Kim, Kwangsoo
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.7
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    • pp.11-16
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    • 2016
  • Silicon carbide (SiC) has received significant attention over the past decade because of its high-voltage, high-frequency and high-thermal reliability in devices compared to silicon. Especially, a SiC Schottky barrier diode (SBD) is most often used in low-voltage switching and low on-resistance power applications. However, electric field crowding at the contact edge of SBDs induces early breakdown and limits their performance. To overcome this problem, several edge termination techniques have been proposed. This paper proposes an improvement in the breakdown voltage using a double-field-plate structure in SiC SBDs, and we design, simulate, fabricate, and characterize the proposed structure. The measurement results of the proposed structure, demonstrate that the breakdown voltage can be improved by 38% while maintaining its forward characteristics without any change in the size of the anode contact junction region.

Effect of Heat Treatment on Interface Behavior in Ni-P/Cr Double Layer (열처리 시간에 따른 Ni-P/Cr 이중 도금 층의 계면 거동에 관한 연구)

  • Choi, Myung-Hee;Park, Young-Bae;Rhee, Byong-ho;Byon, Eungsun;Lee, Kyu Hwan
    • Journal of the Korean institute of surface engineering
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    • v.48 no.6
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    • pp.260-268
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    • 2015
  • The thermal barrier coating (TBC) for inner wall of liquid-fuel rocket combustor consists of NiCrAlY as bonding layer and $ZrO_2$ as a top layer. In most case, the plasma spray coating is used for TBC process and this process has inherent possibility of cracking due to large difference in thermal expansion coefficients among bonding layer, top layer and metal substrate. In this paper, we suggest crack-free TBC process by using a precise electrodeposition technique. Electrodeposited Ni-P/Cr double layer has similar thermal expansion coefficient to the Cu alloy substrate resulting in superior thermal barrier performance and high temperature oxidation resistance. We studied the effects of phosphorous concentrations (2.12 wt%, 6.97 wt%, and 10.53 wt%) on the annealing behavior ($750^{\circ}C$) of Ni-P samples and Cr double layered electrodeposits. Annealing temperature was simulated by combustion test condition. Also, we conducted SEM/EDS and XRD analysis for Ni-P/Cr samples. The results showed that the band layers between Ni-P and Cr are Ni and Cr, and has no formed with heat treatment. These band layers were solid solution of Cr and Ni which is formed by interdiffusion of both alloy elements. In addition, the P was not found in it. The thickness of band layer was increased with increasing annealing time. We expected that the band layer can improve the adhesion between Cr and Ni-P.

Optical Properties of Column -II Nitride Semiconductors (III족 질화물반도체의 분광학적 성질)

  • 김선태;문동찬
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.05a
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    • pp.47-49
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    • 1995
  • We report the spectroscopic properties of column-III nitrifies of GaN, GaInN, and AlGaN. The column-III nitride semiconductors are promising materials to realize the current-injection-type blue-and ultraviolet (UV)-light-emitting devices with high performance. To acheive the lasing with low threshold, the devices are must constructed to double heterostructure by succesive epitaxial growth technique, and we must confine the carriers in the potential barrier and optical confinement in wave guide between barrier and active layers has different refractive index. The refractive index of column-III nitride semiconductors, however, are rarely reported. The measured refractive index was 2.9, and the observed characteristic peak near the enrgy gap was analysed using a dielectric function and may due to excitonic contribution.

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Fabrication of Sub-Micron Size $Al-AlO_x-Al$ Tunnel Junction using Electron-Beam Lithography and Double-Angle Shadow Evaporation Technique (전자빔 패터닝과 double-angle 그림자 증착법을 이용한 sub-micron 크기의 $Al-AlO_x-Al$ 터널접합 제작공정개발)

  • Rehmana, M.;Choi, J.W.;Ryu, S.J.;Park, J.H.;Ryu, S.W.;Khim, Z.G.;Song, W.;Chong, Y.
    • Progress in Superconductivity
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    • v.10 no.2
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    • pp.99-102
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    • 2009
  • We report our development of the fabrication process of sub-micron scale $Al-AlO_x-Al$ tunnel junction by using electron-beam lithography and double-angle shadow evaporation technique. We used double-layer resist to construct a suspended bridge structure, and double-angle electron-beam evaporation to form a sub-micron scale overlapped junction. We adopted an e-beam insensitive resist as a bottom sacrificing layer. Tunnel barrier was formed by oxidation of the bottom aluminum layer between the bottom and top electrode deposition, which was done in a separate load-lock chamber. The junction resistance is designed and controlled to be 50 $\Omega$ to match the impedance of the transmission line. The junctions will be used in the broadband shot noise thermometry experiment, which will serve as a link between the electrical unit and the thermodynamic unit.

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A study of polarized mode convertible, wavelength tunable optical filter utilizing acoustic barrier and acouxto-optic effect in $LiNbo_3$ ($LiNbo_3$의 음향광학효과와 음향파 장벽을 이용한 편광모드 변환형, 파장가변 광 필터에 관한 연구)

  • 임경훈;정홍식
    • Korean Journal of Optics and Photonics
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    • v.11 no.3
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    • pp.193-197
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    • 2000
  • A polarized mode convertible, wavelength tunable optical filters with acoustic barriers and acousto-optic effect have been produced in LiNb03 substrate utilizing the Ti double diffusion technique. Polarization conversion in excess of 81 % and a spectral width of -200 kHz (-1.83 nm) were achieved at a wavelength of 1551.6 nm and RF frequencies of 173.07 kHz and 173.05 kHz for both transverse electric (TE) and transverse magnetic (lM) input polarizations, respectively. The electrical driving power was 10.97 mW and reduced to about 10% of one for an optical filter without an acoustic barrier. A linear tuning rate of 8.2 nmlMHz and sidelobe intensity of -4 dB was demonstrated. rated.

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Garbage Collection on the Embedded Java Virtual Machine (임베디드 자바 가상머신에서의 가비지 컬렉션)

  • Lee Sang-Yun;Kim Sang-Wook;Choi Byung-Uk
    • Journal of the Institute of Electronics Engineers of Korea CI
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    • v.43 no.3 s.309
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    • pp.20-29
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    • 2006
  • The Java language has been established as one of the most widely used language due to its object-oriented programming, safety and flexibility and the garbage collection of the virtual machine has relieved programmers of many difficulties related to the memory management. In the embedded environment, Java is also prevalent, the virtual machine and garbage collector that takes into account the embedded environment is required. In this paper we manage the heap memory area by dividing into young generation and old generation, and we propose a garbage collector in which appropriate techniques are applied to each generation to utilize the different characteristics of each generation. Also, we propose the write barrier technique and double filtering technique for efficient garbage recognition, and double check method for determining and reclaiming the garbage with cyclic structure. The proposed method satisfies the embedded environment's requirements of fast object allocation, real time property, recollection of all the garbage, elimination of fragmentations and high locality.

Energy-band model on photoresponse transitions in biased asymmetric dot-in-double-quantum-well infrared detector

  • Sin, Hyeon-Uk;Choe, Jeong-U;Kim, Jun-O;Lee, Sang-Jun;No, Sam-Gyu;Lee, Gyu-Seok;Krishna, S.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.234-234
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    • 2010
  • The PR transitions in asymmetric dot-in-double-quantum-well (DdWELL) photodetector is identified by bias-dependent spectral behaviors. Discrete n-i-n infrared photodetectors were fabricated on a 30-period asymmetric InAs-QD/[InGaAs/GaAs]/AlGaAs DdWELL wafer that was prepared by MBE technique. A 2.0-monolayer (ML) InAs QD ensemble was embedded in upper combined well of InGaAs/GaAs and each stack is separated by a 50-nm AlGaAs barrier. Each pixel has circular aperture of 300 um in diameter, and the mesa cell ($410{\times}410\;{\mu}m^2$) was defined by shallow etching. PR measurements were performed in the spectral range of $3{\sim}13\;{\mu}m$ (~ 100-400 meV) by using a Fourier-transform infrared (FTIR) spectrometer and a low-noise preamplifier. The asymmetric photodetector exhibits unique transition behaviors that near-/far-infrared (NIR/FIR) photoresponse (PR) bands are blue/red shifted by the electric field, contrasted to mid-infrared (MIR) with no dependence. In addition, the MIR-FIR dual-band spectra change into single-band feature by the polarity. A four-level energy band model is proposed for the transition scheme, and the field dependence of FIR bands numerically calculated by a simplified DdWELL structure is in good agreement with that of the PR spectra. The wavelength shift by the field strength and the spectral change by the polarity are discussed on the basis of four-level transition.

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Anterior maxillary defect reconstruction with a staged bilateral rotated palatal graft

  • Jung, Gyu-Un;Pang, Eun-Kyoung;Park, Chang-Joo
    • Journal of Periodontal and Implant Science
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    • v.44 no.3
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    • pp.147-155
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    • 2014
  • Purpose: In the anterior maxilla, hard and soft tissue augmentations are sometimes required to meet esthetic and functional demands. In such cases, primary soft tissue closure after bone grafting procedures is indispensable for a successful outcome. This report describes a simple method for soft tissue coverage of a guided bone regeneration (GBR) site using the double-rotated palatal subepithelial connective tissue graft (RPSCTG) technique for a maxillary anterior defect. Methods: We present a 60-year-old man with a defect in the anterior maxilla requiring hard and soft tissue augmentations. The bone graft materials were filled above the alveolar defect and a titanium-reinforced nonresorbable membrane was placed to cover the graft materials. We used the RPSCTG technique to achieve primary soft tissue closure over the graft materials and the barrier membrane. Additional soft tissue augmentation using a contralateral RPSCTG and membrane removal were simultaneously performed 7 weeks after the stage 1 surgery to establish more abundant soft tissue architecture. Results: Flap necrosis occurred after the stage 1 surgery. Signs of infection or suppuration were not observed in the donor or recipient sites after the stage 2 surgery. These procedures enhanced the alveolar ridge volume, increased the amount of keratinized tissue, and improved the esthetic profile for restorative treatment. Conclusions: The use of RPSCTG could assist the soft tissue closure of the GBR sites because it provides sufficient soft tissue thickness, an ample vascular supply, protection of anatomical structures, and patient comfort. The treatment outcome was acceptable, despite membrane exposure, and the RPSCTG allowed for vitalization and harmonization with the recipient tissue.