• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1262_1263
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• 2009

Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. In this study, we investigate the nature of thin films formed by photo doping of Ag ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do more economical approach by using copper which play an electrolyte ions role. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1289-1290
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• 2008

Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. In this study, we investigate the nature of thin films formed by photo doping of Cu ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do more economical approach by using copper which play an electrolyte ions role. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.413-414
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• 2012

Programmable Metallization Cell (PMC) memory, which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.286-288
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• 2014

This study deals with the catalyst free radio frequency plasma assisted polymerization of ethylene glycol using nitrogen as reactive gas to modify the surface chemistry and morphology. The deposited film was characterized through various analysis techniques i.e. surface profilometry, Forier transform infrared spectroscopy, water contact angle and UV-visible spectroscopy to analyze film thickness, chemical structure, surface energy and optical properties respectively. The surface topography was analyzed by Atomic force microscopy. It was observed that the ethylene oxide behaviour and optical transmittance of the film were reduced with the introduction of nitrogen gas due to higher fragmentation of monomer. However the hydrophilic behavior of the film improved due to formation of new water loving functional groups suitable for biomedical applications.

• 반도체디스플레이기술학회지
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• 제4권2호
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• pp.1-5
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• 2005

Electon spin resonance measurements have been performed on the Mg-doped wurtzite GaN thin films grown on sapphire substrates by low-pressure metal-organic chemical vapor deposition. The sample set included films as-grown with the regular Mg doped and Mg delta doped samples and the corresponding annealed ones. The resonance signal has been observed from the annealed Mg delta-doped sample with the Lande g value of 2.029. This indicates that the singlet resonance signal originates from the neutral Mg acceptor located at 0.24 eV above the valence band edge and 0.13 eV above the Fermi level because of the nuclear hyperfine spin 1=0 of Mg and the larger value than the free electron g=2.0023.

• Applied Science and Convergence Technology
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• 제23권1호
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• pp.1-13
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• 2014

Semiconductor quantum structures are often characterized by their energy gaps which are modified by the quantum size effect. Energy levels in semiconductors can be realized by optical transitions within confined structures. Photoluminescence spectroscopy in magnetic fields at low temperatures has proved to be a powerful technique for investigating the electronic states of quantum semiconductor heterostructures and offers a complimentary tool to electrical transport studies. In this review, we examine comprehensive investigations of magneto-excitonic and Landau transitions in a large variety of undoped and doped quantum-well structures. Strong magnetic fields change the diamagnetic energy shift of free excitons from quadratic to linear in B in undoped single quantum well samples. Two-dimensional electron gas induced by modulation doping shows pronounce quantum oscillations in integer quantum Hall regime and discontinuous transition at ${\nu}=1$. Such discontinuous transition can be explained as the formation of spin waves or Skyrmions.

• E2M - 전기 전자와 첨단 소재
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• 제10권7호
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• pp.713-718
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• 1997

Polyaniline free standing films cast from N-methyl-2-pyrrolidinone(NMP) solution, camphorsulfonic acid(HCSA), dodecylbenzensulfonic acid(HDBSA), inorganic matter(carbon black, graphite) and metal(silver) were prepared by processings. The properties of these films such as crystallinity, near-infrared absorption spectra and conductivity were investigated. The HCSA and HDBSA doped polyaniline films cast from m-cresol and chloroform solvents showed the metallic property and high crystallinity, respectively. The value of conductivity in the HCSA doped polyaniline film obtained 180 S/cm. We have obtained the value of conductivity 200 S/cm in the metal(silver) doped polyaniline film, which is higher than that of the HCSA doped polyaniline film. The metal(silver) doped polyaniline film shows good properties as a electromagnetic shielding material.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 G
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• pp.3331-3333
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• 1999

A novel antistiction method using photo resist is proposed and verified to improve the yield of polysilicon micromachining process. $7.5{\mu}m-thick$ polysilicon is used as a structural layer. Residual stress and stress gradient originated from polysilicon deposition with LPCVD process is relaxed by doping and thermal treatment. The stress gradient of stress-free polysilicon layer is $-0.755MPa/{\mu}m$.

• 한국막학회:학술대회논문집
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• 한국막학회 1998년도 추계 총회 및 학술발표회
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• pp.66-69
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• 1998

1. 서론 : 본 연구는 시간이 경과함에 따라 free volume감소로 나타나는 PTMSP[Poly(1-trimethylsilyl-1-propyne)] memebrane의 pysical aging을 늦추거나 방지할 목적으로 PTMSP polymer를 합성하여 여기에 hydroxy-terminated PDMS를 graft시켜 PTMSP/PDMS graft copolymer를 제조하였다. 용매증발법에 의해 PTMSP memebrane 및 PTMSP/PDMS graft copolymer memebrane을 제막한 후 PTMSP막의 물리적 노화를 관찰하기 위한 시점에서 조업시간에 따른 이들 막의 transport property을 살펴 보았다. 또한 이들 polymer을 사용하여 0.5 wt%의 희박 dope solution을 제조한 후 여기에 상전환법에 의해 제조된 비대칭 PEI(polyetherimide)지지막을 dip-doping시켜 PTMSP-PEI, PTMSP/PDMS-PEI 복합막을 제조하여 상기의 두 막과 투과증발 특성을 상호 비교하여 보았다. 그리고 객관적 비교 자료를 얻을 목적으로 PDMS막과 PDMS-PEI 복합막을 각각 제막하여 동일조건에서 실험을 수행하였다. 따라서 본 연구는 수중에 미량 용해된 chloroform, trichloroethylene, perchlororthylene, 1,1,1-trichloroethane 등의 유기염소계화합물 제거 실험을 통해 PTMSP, PTMSP/PDMS 등의 dense membrane과 asymmetric composite membrane 사이의 상관관계 및 이들 막들의 투과특성을 서로 비교, 분석하는데 목적을 두었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.157-157
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• 2010

Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. PMC components of Ge-Se doped with Ag ions were studied with help of the previous studies and copper was used for metallic ions taking into account of economy of components. In this study, we investigated the nature of thin films formed by photo doping of Cu ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do more economical approach by using copper which play role of electrolyte ions. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.