A New Antistiction Method Using Polymer Suspension for Fabrication with Polysilicon Micromachining

다결정 실리콘 마이크로머시닝 제작 시 폴리머 지지를 이용한 옆 방향 정착방지 방법의 제안

  • Lim, Hyung-Taek (Lab for Micro Sensors & Actuators, School of Electrical Engineering, Seoul National University) ;
  • Yoon, Choong-Hyun (Lab for Micro Sensors & Actuators, School of Electrical Engineering, Seoul National University) ;
  • Kim, Yong-Kweon (Lab for Micro Sensors & Actuators, School of Electrical Engineering, Seoul National University)
  • 임형택 (서울대학교 전기공학부 마이크로 머신 연구실) ;
  • 윤종현 (서울대학교 전기공학부 마이크로 머신 연구실) ;
  • 김용권 (서울대학교 전기공학부 마이크로 머신 연구실)
  • Published : 1999.07.19

Abstract

A novel antistiction method using photo resist is proposed and verified to improve the yield of polysilicon micromachining process. $7.5{\mu}m-thick$ polysilicon is used as a structural layer. Residual stress and stress gradient originated from polysilicon deposition with LPCVD process is relaxed by doping and thermal treatment. The stress gradient of stress-free polysilicon layer is $-0.755MPa/{\mu}m$.

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