• 제목/요약/키워드: Doping mechanism

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CdO-${\alpha}-Fe_2O_3$촉매상에서 일산화탄소의 산화반응에 대한 CdO의 첨가 효과 (Doping Effect of CdO on the Oxidation of Carbon Monoxide over CdO-${\alpha}-Fe_2O_3$System)

  • 이성한;김용록;김규홍;최재시
    • 대한화학회지
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    • 제29권2호
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    • pp.111-120
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    • 1985
  • 4 mol% Cd-doped ${\alpha}-Fe_2O_3$, 8 mol% Cd-doped ${\alpha}-Fe_2O_3$ 및 12 mol% Cd-doped ${\alpha}-Fe_2O_3$상에서 CO 산화반응이 각기 연구되었다. Cd의 doping level에 관계없이 반응차수는 1.5차이며 CO에 대하여 1차, $O_2$에 대하여 O.5차이다. 350∼$460^{\circ}C$의 반응온도 범위에서 CO산화반응의 활성화 에너지는 10.10∼11.30Kcal/$mol^{-1}$ 이며 Cd-doped${\alpha}-Fe_2O_3$의 전기전도도 데이타와 반응속도 데이타로부터 CO산화반응 메카니즘이 규명되었다. 특히 Cd doping 효과로부터 ${\alpha}-Fe_2O_3$의 촉매활성이 격자산소의 공위에 포획되어 있는 전자의 여기(excitation)에 기인된다는 사실이 밝혀졌으며 반응분자들의 흡착자리를 알게 되었다.

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리튬이온전지에서 새로운 양극재료를 위한 금속인산화물 (Lithium Transition Metal Phosphate Cathodes for Advanced Lithium Batteries)

  • 정성윤
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.26-26
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    • 2003
  • Lithium storage electrodes for rechargeable batteries require mixed electronic-ionic conduction at the particle scale in order to deliver desired energy density and power density characteristics at the device level. Recently, lithium transition metal phosphates of olivine and Nasicon structure type have become of great interest as storage cathodes for rechargeable lithium batteries due to their high energy density, low raw materials cost, environmental friendliness, and safety. However, the transport properties of this family of compounds, and especially the electronic conductivity, have not generally been adequate for practical applications. Recent work in the model olivine LiFePO$_4$, showed that control of cation stoichiometry and aliovalent doping results in electronic conductivity exceeding 10$^{-2}$ S/cm, in contrast to ~10$^{-9}$ S/cm for high purity undoped LiFePO$_4$. The increase in conductivity combined with particle size refinement upon doping allows current rates of >6 A/g to be utilized while retaining a majority of the ion storage capacity. These properties are of much practical interest for high power applications such as hybrid electric vehicles. The defect mechanism controlling electronic conductivity, and understanding of the microscopic mechanism of lithiation and delithiation obtained from combined electrochemical and microanalytical techniques, will be discussed

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Work function engineering on transparent conducting ZnO thin films

  • Heo, Gi-Seok;Hong, Sang-Jin;Park, Jong-Woon;Choi, Bum-Ho;Lee, Jong-Ho;Shin, Dong-Chan
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1706-1707
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    • 2007
  • A possibility of work function engineering on ZnO thin film is studied by in-situ and ex-situ doping process. The work function of ZnO thin film decreases with increasing boron and phosphorus doping quantity. But, the work function of Al-doped ZnO (AZO) thin film increases as the boron doping quantity incresess. The range of work function change on ZnO thin films is 3.5 eV to 5.5 eV. This result shows that the work function of ZnO thin film is indeed engineerable by changing materials of dopants and their compositional distribution of surface. We also discuss the possible mechanism of work function engineering on ZnO thin films.

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$CsN_3$ as an air stable and low temperature evaporable novel n doping material for high efficiency and low driving voltage in organic light-emitting diodes

  • Lee, Jun-Yeob;Yook, Kyoung-Soo;Jeon, Soon-Ok;Joo, Chul-Woong;Lee, Tae-Woo;Noh, Tae-Yong;Yang, Haa-Jin;Kang, Sung-Kee
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1319-1322
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    • 2008
  • $CsN_3$ was developed as a novel n doping material with air stability and low deposition temperature. Evaporation temperature of $CsN_3$ was similar to that of common hole injection material and it worked well as a n dopant in electron transport layer. Driving voltage was lowered and high power efficiency was obtained in green phosphorescent devices by using $CsN_3$ as a dopant in electron transport layer. It could also be used as a charge generation layer in combination with $MoO_3$. In addition, n doping mechanism study revealed that $CsN_3$ is decomposed into Cs and $N_2$ during evaporation. This is the first work reporting air stable and low temperature evaporable n dopant in organic light-emitting diodes.

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The Comparison of Property and Visible Light Activity between Bulk and Surface Doped N-TiO2 Prepared by Sol-gel and N2-plasma Treatment

  • Hu, Shaozheng;Li, Fayun;Fan, Zhiping
    • Bulletin of the Korean Chemical Society
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    • 제33권1호
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    • pp.199-203
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    • 2012
  • A modified sol-gel method and $N_2$-plasma treatment were used to prepare bulk and surface doped N-$TiO_2$, respectively. XRD, TEM, UV-vis spectroscopy, $N_2$ adsorption, Elemental Analyzer, Photoluminescence, and XP spectra were used to characterize the prepared $TiO_2$ samples. The N doping did not change the phase composition and particle sizes of $TiO_2$ samples, but increased the visible light absorption. The photocatalytic activities were tested in the degradation of an aqueous solution of a reactive dyestuff, methylene blue, under visible light. The photocatalytic activity of surface doped N-$TiO_2$ prepared by $N_2$-plasma was much higher than that of bulk doped N-$TiO_2$ prepared by sol-gel method. The possible mechanism for the photocatalysis was proposed.

TiO2 Nano-doping Effect on Flux Pinning and Critical Current Density in an MgB2 Superconductor

  • Kang, J.H.;Park, J.S.;Lee, Y.P.;Prokhorov, V.G.
    • Journal of Magnetics
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    • 제16권1호
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    • pp.15-18
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    • 2011
  • We have studied the $TiO_2$ doping effects on the flux pinning behavior of an $MgB_2$ superconductor synthesized by the in-situ solid-state reaction. From the field-cooled and zero-field-cooled temperature dependences of magnetization, the reversible-irreversible transition of $TiO_2$-doped $MgB_2$ was determined in the H-T diagram (the temperature dependence of upper critical magnetic field and irreversibility line). For comparison, the similar measurements are also obtained from SiC-doped $MgB_2$. The critical current density was estimated from the width of hysteresis loops in the framework of Bean's model at different temperatures. The obtained results manifest that nano-scale $TiO_2$ inclusions served as effective pinning centers and lead to the enhanced upper critical field and critical current density. It was concluded that the grain boundary pinning mechanism was realized in a $TiO_2$-doped $MgB_2$ superconductor.

Enhancement of NOx photo-oxidation by Fe-doped TiO2 nanoparticles

  • Martinez-Oviedo, Adriana;Ray, Schindra Kumar;Gyawali, Gobinda;Rodriguez-Gonzalez, Vicente;Lee, Soo Wohn
    • Journal of Ceramic Processing Research
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    • 제20권3호
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    • pp.222-230
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    • 2019
  • Microwave hydrothermal-assisted sol-gel method was employed to synthesize the Fe doped TiO2 photocatalyst. The morphological analysis suggests anatase phase nanoparticles of ~20 nm with an SBET area of 283.99 ㎡/g. The doping of Fe ions in TiO2 created oxygen vacancies and Ti3+ species as revealed through the XPS analysis. The reduction of the band gap (3.1 to 2.8 eV) is occurred by doping effect. The as-prepared photocatalyst was applied for removal of NOx under solar light irradiation. The doping of Fe in TiO2 facilitates 75 % of NOx oxidation efficiency which is more than two-fold enhancement than the TiO2 photocatalyst. The possible reason of enhancement is associated with high surface area, oxygen vacancy, and reduction of the band gap. Also, the low production of toxic intermediates, NO2 gas, is further confirmed by Combustion Ion Chromatography. The mechanism related NOx oxidation by the doped photocatalyst is explained in this study.

Photoluminescence Up-conversion in GaAs/AlGaAs Heterostructures

  • Cheong, Hyeonsik M.
    • Journal of Korean Vacuum Science & Technology
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    • 제6권2호
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    • pp.58-61
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    • 2002
  • Photoluminescence up-conversion in semiconductor heterostructures is a phenomenon in which luminescence occurs at energies higher than that of the excitation photons. It has been observed in many semiconductor heterostructure systems, including InP/AnALAs, CdTe/CdMgTe, GaAs/ordered-(Al)GalnP, GaAs/AIGaAs, and InAs/GaAs. In this wort, GaAs/AIGaAs heterostructures are used as a model system to study the mechanism of the up-conversion process. This system is ideal for testing different models because the band offsets are quite well documented. Different heterostructures are designed to study the effect of disorder on the up-converted luminescence efficiency. In order to study the roles of different types of carriers, the effect of doping was investigated. It was found that the up-converted luminescence is significantly enhanced by p-type doping of the higher-band-gap material.

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PEDOT 합성시 유기용매 첨가에 따른 DC 전기전도 메카니즘 (DC conduction mechanism of PEDOT by adding organic solvents)

  • 박창모;김태영;김윤상;김종은;서광석
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 하계학술대회 논문집 C
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    • pp.1709-1711
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    • 2004
  • 3,4-ethylenedioxythiophene(EDOT)을 ferric-toluenesulfonate(FTS)로 doping하여 합성하였다. 이때 다양한 유기용매를 함께 첨가하여 합성하였고, 온도에 따른 각각의 DC 전도도를 측정하였다. FTS로 dofing된 poly(3,4-ethylenedioxythiophene) (PEDOT)는 3-D variable range hopping model을 잘 따르며, alcohol류의 용매와 함께 합성한 경우는 상온의 DC 전도도가 2 S/cm로 0.4 S/cm의 reference 보다 전기전도를 증가시키는 반면, ketone류는 약 $10^{-11}$ S/cm로 전기전도를 감소시키는 경향을 보였다. 전도도의 증감과 doping level의 관계를 규명하기 위하여 X-ray 분석을 하였다.

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