• Korean Journal of Materials Research
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• v.25 no.2
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• pp.107-112
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• 2015

The oxide films formed on etched aluminum foils play an important role as dielectric layers in aluminum electrolytic capacitors. $Y_2O_3$-doped $ZrO_2$ (YZ) films were coated on the etched aluminum foils by sol-gel dip coating, and the electrical properties of YZ-coated Al foils were characterized. YZ films annealed at $450^{\circ}C$ were crystallized into a cubic phase, and as the $Y_2O_3$ doping content increased, the unit cell of $ZrO_2$ expanded and the grain size decreased. The etch pits of Al foils were filled by YZ sol when it dried at atmospheric pressure after repeating for several times, but this step could essentially be avoided when being dried in a vacuum. YZ-coated foils indicated that the specific capacitance and dissipation factor were $2-2.5{\mu}F/cm^2$ and 2-4 at 1 kHz, respectively, and the leakage current and withstanding voltage of films approximately 200 nm thick were $5{\times}10^{-4}A$ at 21 V and 22 V, respectively. After being anodized at 500 V, the foils exhibited a specific capacitance and dissipation factor of $0.6-0.7{\mu}F/cm^2$ and 0.1-0.2, respectively, at 1 kHz, while the leakage current and withstanding voltage were $2{\times}10^{-4}-3{\times}10^{-5}A$ at 400 V and 420-450 V, respectively. This suggests that YZ film is a promising dielectric that can be used in high voltage Al electrolytic capacitors.

• Korean Journal of Materials Research
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• v.21 no.8
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• pp.450-455
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• 2011

[ $Al_2TiO_5$ ]has a high refractive index and good solubility of the chromophore in the $Al_2TiO_5$ lattice, which allows this structure to be a good candidate for the development of new ceramic pigments. However, pure $Al_2TiO_5$ is well known to decompose on firing at $900{\sim}1100^{\circ}C$. However, this process can be inhibited by the incorporation of certain metal cations into its crystalline lattice. In this study, the synthesis of gray ceramic pigment was performed by doping cobalt on the $Al_2TiO_5$ crystal structure. The $Al_2TiO_5$ was synthesized using $Al_2O_3$ and $TiO_2$, and doped with $Co_3O_4$ as a chromophore material. In order to prevent the thermal decomposition during the cooling procedure, MgO was added to samples by 0.05 mole, 0.1 mole, and 0.15 mole as a stabilizer. The samples were fired at $1500^{\circ}C$ for 2 hours and cooled naturally. The crystal structure, solubility limit, and color of the synthesized pigment were analyzed using XRD, Raman spectroscopy, UV, and UV-vis. $Al_2O_3$ was available for the formation of $CoAl_2O_4$, which should also be considered in order to explain the small amount of this phase detected in the sample with the higher $Co^{2+}$ content (${\geq}$ 0.03 mole). It was found that the solubility limit of $Co^{2+}$ in the $Al_2TiO_5$ crystal was 0.02 mole% through an analysis of Raman spectroscopy. Through the addition of a pigment with 0.02 mole% of $Co^{2+}$ to lime-barium glaze, stabilized gray color pigments with 66.54, -2.35, and 4.68 as CIE-$L^*a^*b^*$ were synthesized.

• Membrane Journal
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• v.29 no.6
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• pp.299-307
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• 2019

Photocatalysis is an environment friendly technique for degrading organic dyes in water. Tungsten oxide is becoming an active area of research in photocatalysis nanomaterials for having a smaller bandgap than the previously favored titanium dioxide. Synthesis of hierarchical structures, doping platinum (Pt), coupling with nanocomposites or other semiconductors are investigated as valid methods of improving the photocatalytic degradation efficiency. These impact the reaction by creating a redshift in the wavelength of light used, effecting charge transfer, and the formation/recombination of electron-hole pairs. Each of the methods mentioned above are investigated in terms of synthesis and photocatalytic efficiency, with the simplest being modification on the morphology of tungsten oxide, since it does not need synthesis of other materials, and the most efficient in photocatalytic degradation being complex coupling of metal oxides and carbon composites. The photocatalysis technology can be incorporated with water purification membrane by modularization process and applied to advanced water treatment system.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.316-316
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• 2010

Thin films spin-coated from solvent solutions are characterized by solution parameters and spin-coating process. In this study, performance characteristics of polymer solar cells were investigated with changing solution parameters such as solvent and additives. The phase-separation between polymer and fullerene is needed to make the percolation pathway for better transportation of hole and electron in polymer solar cells. For this reason, cooperative effects of solvent mixtures adding additives with distinct solubility have been studied recently. In this study, chlorobezene, 1, 2-dichlorbenzene, and chloroform were used as solvent. 1, 8-diiodoctaned and 1, 8-octanedithiol were used as additives and were added into poly(3-hexylthiophene-2, 5-diyl)/[6, 6]-phenyl C61 butyric acid methyl ester (P3HT/PCBM) blends. Pre-patterned ITO glass was cleaned using ultrasonication in mixed solvent with ethyl alcohol, isopropyl alcohol and acetone. PEDOT:PSS was spin-coated on to the ITO substrate at 3000rpm and was baked at $120^{\circ}C$ for 10min on the hotplate. The prepared solution was spin-coated at 1000rpm and the spin-coated thin film was dried in the Petri dishes. Al electrode was deposited on the thin film by thermal evaporation. The devices were annealed at $120^{\circ}C$ for 30min. By adding 2.5 volume percent of additives into the chlorobenzene from that bulk heterojunction films consisting of P3HT/PCBM, the power efficiency (AM 1.5G conditions) was increased from 2.16% to 2.69% and 3.12% respectively. We have investigated the effect of additives in P3HT/PCBM blends and the film characteristics and the film characteristics including J-V characteristics, absorption, photoluminescence, X-ray diffraction, and atomic force microscopy to mainly depict the morphology control by doping additives.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• Korean Journal of Materials Research
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• v.10 no.8
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• pp.525-531
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• 2000

Sb-doped tin oxide films were deposited on Cornig glass 1737 substrate by plasma enhanced chemical vapor deposition (PECVD) technique. The films deposited at different reaction parameters were then examined by using XRD and AFM. The relatively good crystalline thin film was formed at $450^{\circ}C$, input gas ratio R[$P_{SbCl}P_{{SnCl}_4}$]=1.12 and r.f. power 30W. The surface roughness of the film formed by PECVD compared to TCVD was more smooth. Higher concentration of Sb dopant, lower deposition temperature, and thinner thickness of deposited film led to de-creasing surface roughness of the formed thin films.

• Applied Chemistry for Engineering
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• v.24 no.6
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• pp.611-615
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• 2013

Vanadium oxide ($VO_2$) and tungsten-doped vanadium oxide (W-$VO_2$) powder, well known as thermochromic materials, were prepared from vanadium pentoxide ($V_2O_5$) and oxalic acid dihydrate by hydrothermal and calcination process. The crystal structure and thermochromic property of samples were analyzed using FE-SEM, XRD, XPS, DSC, and UV-Vis-NIR spectroscopy. With increasing the doping amount of W, the phase transition temperature of W-$VO_2$ sample decreased from $70^{\circ}C$ to $42^{\circ}C$. When heating W-$VO_2$ sample above the phase transition temperature, the UV-Vis-NIR spectrum was not changed in the visible range and shifted towards a low transparency in the full name (NIR) region.

• Clean Technology
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• v.21 no.4
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• pp.235-240
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• 2015

In this study, vanadium dioxide was doped with titanium (0~0.5 at %) to improve thermochromic properties. The titanium doped vanadium dioxide (Ti-VO₂) particles were prepared via thermolysis process using vanadyl sulfate, ammonium bicarbonate and titianium chloride as precursors. The crystal structure, morphology, chemical bonding and thermochromic properties were investigated by using XRD, FE-SEM, XPS, DSC and UV-Vis-NIR spectroscopy. It was found that titanium was successfully doped into the crystal lattice of VO₂ and the obtained Ti-VO₂ particles have monoclinic structure. With increasing Ti concentration, the particle size and phase transition temperature of Ti-VO₂ particles decreased and NIR switching efficiency increased.

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.34-39
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• 2011

Screen printing method is a common way to fabricate the crystalline silicon solar cell with low-cost and high-efficiency. The screen printing metallization use silver paste and aluminum paste for front and rear contact, respectively. Especially the rear contact between aluminum and silicon is important to form the back surface filed (Al-BSF) after firing process. BSF plays an important role to reduces the surface recombination due to $p^+$ doping of back surface. However, Al electrode on back surface leads to bow occurring by differences in coefficient of thermal expansion of the aluminum and silicon. In this paper, we studied the properties of mono crystalline silicon solar cell for rear electrode with aluminum and aluminum-boron in order to characterize bow and BSF of each paste. The 156*156 $m^2$ p-type silicon wafers with $200{\mu}m$ thickness and 0.5-3 ${\Omega}\;cm$ resistivity were used after texturing, diffusion, and antireflection coating. The characteristics of solar cells was obtained by measuring vernier callipers, scanning electron microscope and light current-voltage. Solar cells with aluminum paste on the back surface were achieved with $V_{OC}$ = 0.618V, JSC = 35.49$mA/cm^2$, FF(Fill factor) = 78%, Efficiency = 17.13%.

• Journal of the Korean Electrochemical Society
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• v.3 no.3
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• pp.141-145
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• 2000

Anodically Polymerized conducting Polypyrrole film electrode was employed to Pick up uranyl ion with the type of Gr/ppy, xylenol orange modified electrode. To have Porous and oriented ppy film, NBR was applied as precoating agent. The rate constant of polymerization was $3.22\times10^{-3}s^{-1}$ which was 1.6 times smaller value than bare graphite surface. The deposited amount of uranyl iou on $1.70Ccm^{-2}$ of ppy was $1.55\times10^{-4}g$. The matrix effect in artificial seawater was $6.8\%$. The polymer film electrode has a diffusion controlled process in conduction, but the modified Gr/ppy, $X.O^{4-}UO^+$ type was influenced on the ion doping and electronic conduction of film itself owing to increasing of impedance. The capacitance of electrical double layer was respectively enhanced to 56 and 130 times in Gr/ppy, $X.O.^{4-}$ and Gr/ppy, $X.O^{4-}UO^+$ than Grippy type electrode.