• 한국결정성장학회지
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• 제19권2호
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• pp.75-78
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• 2009

PBN 도가니를 이용하여 Si이 도핑된 GaAs 단결정을 수직경사 응고법으로 성장시켰다. PBN 도가니에 산화막인 $B_{2}O_{3}$의 양을 $0{\sim}0.2wt%$ 범위에서 변화시키면서, 성장 후 캐리어 농도를 측정하였다. $B_{2}O_{3}$ 첨가량이 증가함에 따라, 초기 0.1 정도의 Si 도판트의 편석계수는 0.01 부근까지 급격히 감소하고, 동시에 캐리어 농도도 감소하는 것을 알 수 있었다. 이는 성장도중 도판트인 Si이 $B_{2}O_{3}$과 반응하며 도너인 Si 양을 감소시키며, 동시에 억셉터인 B 양을 증가시키기 때문으로 보인다. 한편 PBN 도가니 내면에 얇은 유리질의 $B_{2}O_{3}$층 형성이 용이한 고온 산화막 처리가 결함감소에 효과적임을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1370-1372
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• 1998

Boron doped CdS films were prepared by CBD(Chemical Bath Deposition) method using boric acid ($B_3HO_3$) as donor dopant source, and their properties were investigated. As-grown CdS films were highly adherent and specularly reflective. Boron doped CdS film which was fabricated under the condition of 0.01 $B_3HO_3/Cd(Ac)_2$ mole ratio, exhibited the lowest resistivity of $2{\Omega}cm$ and the highest optical bandgap of 2.41eV. Also, CdS/CdTe solar cells were fabricated with various doping concentration of CdS films. Using optimized CdS film as the window layer of CdS/CdTe solar cell, the characteristics of the cell were improved. ( $V_{oc}$=610mV, $J_{sc}$=37.5mA/cm, FF=0.4, $\eta$=9.1% )

• 전자공학회논문지D
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• 제35D권8호
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• pp.24-30
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• 1998

A blue LED of $In_{x}Ga_{1-x}N$ multiple quantum well structure which had the blue emission spectrum of donor-acceptor pair transition generated form Si-Zn co-doped $In_{x}Ga_{1-x}N$ active layer, was fabricated. The $In_{x}Ga_{1-x}N$ MQW heterojunction LED structure was grown by MOCVD on the sapphire substrate with (0001) surface orientation at 800.deg. C. The fabricated LED exhibited forward cut-in voltage of 4~4.5V and reverse breakdown voltage of -13V. Its optical chracteristics showed that the center wavelength of peak emission occurred at 460nm and the optical intensity was increased linearly with respect to the injected electrical current above 5mA.

• 한국결정성장학회지
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• 제18권4호
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• pp.137-139
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• 2008

Floating zone, neutron transmutation-doped and magnetic Czochralski silicon crystals are being widely used for fabrication power devices. To improve the quality of these devices and to decrease their production cost, it is necessary to use large-diameter wafers with high and uniform resistivity. Recent developments in the crystal growth technology of Czochralski silicon have enable to produce Czochralski silicon wafers with sufficient resistivity and with well-controlled, suitable concentration of oxygen. In addition, using Czoehralski silicon for substrate materials may offer economical benefits, First, Czoehralski silicon wafers might be cheaper than standard floating zone silicon wafers, Second, Czoehralski wafers are available up to diameter of 300 mm. Thus, very large area devices could be manufactured, which would entail significant saving in the costs, In this work, the conventional Czochralski silicon crystals were grown with higher oxygen concentrations using high pure polysilicon crystals. The silicon wafers were annealed by several steps in order to obtain saturated oxygen precipitation. In those wafers high resistivity over $5,000{\Omega}$ cm is kept even after thermal donor formation annealing.

• 한국전기전자재료학회논문지
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• 제18권10호
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• pp.896-901
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• 2005

The microstructure and electrical properties of praseodymium-based zinc oxide varistors were investigated at various cobalt oxide contents in the range of $0.5{\~}5.0 mol\%$. The ceramic density increased in the range of $5.25{\~}5.55 g/cm^3$ with increasing cobalt oxide content. The varistor doped with cobalt oxide of $1.0 mol\%$ exhibited the highest nonlinearity, with 66.6 in nonlinear exponent and 1.2 $\mu$A in leakage current. The donor concentration, density of interface states, and tamer height were in the range of $(1.06{\~}1.69){\times}10^{18}/cm^3$, $(3.11 {\~}3.56){\times}10^{12}/cm^2$, and 0.80${\~}$1.07 eV, respectively.

• 한국세라믹학회지
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• 제26권2호
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• pp.258-266
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• 1989

The effects of grain size and dopant ZnO on the photoelectrochemical conversion in TiO2 ceramic electrodes have been investigated. The photocurrent increases with increasing grain size in the undoped TiO2 ceramic electrode. In ZnO-doped TiO2 electrodes, the photocurrent decreases with increasing ZnO up to 0.4 wt% due to decrease of donor concentration, and then with further addition of ZnO, photocurrent increases according to the formation of second phase. However, the photoresponse appears at wavelength of 420nm, which is very close to the energy band gap of TiO2, regardless of grain size and amount of ZnO.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.512-513
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• 2005

We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerene(C60) as electron acceptor(A) with doped charge transport layers, and BCP and $Alq_3$ as an exciton blocking layer(EBL). We have measured the photovoltaic characteristics of the solar cell devices using the Xe lamp as a light source. We were use of $Alq_3$ layer leads to external power conversion efficiency was 2.65% at illumination intensity $100mW/cm^2$. Also we confirmed the optimum thickness ratio of the DA hetero-junction is about 1:2.

• Bulletin of the Korean Chemical Society
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• 제10권1호
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• pp.30-32
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• 1989

Traces of nine elements, gold, arsenic, cobalt, chromium, copper, europium, hafnium, sodium and antimony in commercially available silicon crystals were determined by the instrumental neutron activation analysis using the single comparator method. The values of the concentrations of these elements in both single and polycrystals were found to decrease significantly to a low limiting level by simply washing and etching surface contaminants having been introduced during various steps of sample preparation and irradiation. However, the chromium levels in polycrystals were not easily decreased, these depending upon the cutting tools employed. The Sb-doped content in each semiconductor has been compared with the associated quantities such as the concentration and the conductivity range given by the sample donor. Uncertainty in the sodium analysis due to the fission neutron reaction by silicon itself was discussed.

• 마이크로전자및패키징학회지
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• 제8권1호
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• pp.27-32
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• 2001

($Zr_{0.8}, Sn_{0.2})TiO_4$의 소결온도를 저하시키고 품질계수 향상의 목적으로 첨가한 $V_2O_5$가 다른 donor형태의 화합물과 달리 품질계수의 저하를 가져오는 원인을 $Ta_2O_5$가 첨가된 ($Zr_{0.8}, Sn_{0.2})TiO_4$와 미세 구조변화, 전기전도도, 산화상태의 관점에서 비교 분석하였다. 일반적으로 donor형태의 화합물의 첨가는 ($Zr_{0.8}, Sn_{0.2})TiO_4$의 산소공공의 농도를 감소시켜 품질계수의 증가를 가져오는 것으로 알려져 있다. $V_2O_5$의 첨가의 경우는 액상소결에 의한 결정입계상 존재, 섬유상 형태의 $V_2O_5-TiO_2$rich 이차상 형성 및 Vanadium 이온의 산화상태 불안정에서 기인된 산소공공의 농도 증가가 복합적으로 ($Zr_{0.8}, Sn_{0.2})TiO_4$의 품질계수 저하 요인으로 작용하였다.

• 마이크로전자및패키징학회지
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• 제24권2호
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• pp.49-53
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• 2017

Cl 불순물 도핑에 따른 $SnSe_2$ 이차원 전자소재의 고온(300~450 K) 전도 물성 변화를 고찰하였다. 고상합성법을 통하여, 도핑이 없는 $SnSe_2$ 소재와 Cl이 도핑된 $SnSe_{1.994}Cl_{0.006}$ 소재를 합성하였으며, X선 회절 실험을 통하여, 두 재료 모두 불순물 없는 단일상이 형성되었음을 확인하였다. 비저항의 온도의존성 측정을 통하여, 전기 전도 mechanism이 Cl 도핑에 의해 hopping 전도에서 축퇴 전도로의 전이가 일어남을 관찰할 수 있었으며, 홀효과 측정을 통해 그러한 전도 mechanism의 전이가, Cl의 효과적인 donor 역할에 따른 자유전자의 농도 증가에서 기인한 것임을 확인하였다. 온도에 따른 전자이동도의 변화 분석을 통하여, 도핑이 없는 $SnSe_2$의 고온 전기 전도는 grain boundary 산란이 지배적인 영향을 미치는 반도체 전도 특성을 보이는 반면, Cl 도핑에 따라 grain boundary 산란 효과가 저하되는 금속 전도 특성을 보인다는 것을 알 수 있었다.